JP4327109B2 - 容量素子 - Google Patents
容量素子 Download PDFInfo
- Publication number
- JP4327109B2 JP4327109B2 JP2005046904A JP2005046904A JP4327109B2 JP 4327109 B2 JP4327109 B2 JP 4327109B2 JP 2005046904 A JP2005046904 A JP 2005046904A JP 2005046904 A JP2005046904 A JP 2005046904A JP 4327109 B2 JP4327109 B2 JP 4327109B2
- Authority
- JP
- Japan
- Prior art keywords
- metal conductor
- metal
- conductor
- wiring
- capacitive element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Semiconductor Integrated Circuits (AREA)
Description
5;第1の金属配線、6;第2の金属配線、7;下層電極、8;絶縁膜、
9;上層電極、10、11;櫛形導体
Claims (1)
- 半導体基板上に積層形成された絶縁体膜上に、第1の金属配線に接続する第1の金属導体と、第2の金属配線に接続する第2の金属導体とが、それぞれの先端を対向させ、かつ前記第1の金属導体と前記第2の金属配線との間の結合容量及び前記第2の金属導体と前記第1の金属配線との間の結合容量が、前記第1の金属導体と前記第2の金属導体との間の結合容量より十分小さくなるように、前記第1の金属導体及び前記第2の金属導体の対向する先端を、前記第1の金属配線及び前記第2の金属配線から離間して配置し、前記第1の金属導体及び前記第2の金属導体の対向する先端が、該第1の金属導体及び前記第2の金属導体の延出方向に垂直方向の幅より広いことを特徴とする容量素子。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005046904A JP4327109B2 (ja) | 2005-02-23 | 2005-02-23 | 容量素子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005046904A JP4327109B2 (ja) | 2005-02-23 | 2005-02-23 | 容量素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006237127A JP2006237127A (ja) | 2006-09-07 |
JP4327109B2 true JP4327109B2 (ja) | 2009-09-09 |
Family
ID=37044475
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005046904A Expired - Fee Related JP4327109B2 (ja) | 2005-02-23 | 2005-02-23 | 容量素子 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4327109B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5491160B2 (ja) * | 2009-12-22 | 2014-05-14 | ラピスセミコンダクタ株式会社 | 微小容量素子及びこれを用いた半導体装置 |
JP5726609B2 (ja) * | 2011-04-15 | 2015-06-03 | 富士通セミコンダクター株式会社 | 容量素子および半導体装置 |
-
2005
- 2005-02-23 JP JP2005046904A patent/JP4327109B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JP2006237127A (ja) | 2006-09-07 |
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