JP4322396B2 - 半導体装置の試験方法及び試験装置 - Google Patents

半導体装置の試験方法及び試験装置 Download PDF

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JP4322396B2
JP4322396B2 JP2000130404A JP2000130404A JP4322396B2 JP 4322396 B2 JP4322396 B2 JP 4322396B2 JP 2000130404 A JP2000130404 A JP 2000130404A JP 2000130404 A JP2000130404 A JP 2000130404A JP 4322396 B2 JP4322396 B2 JP 4322396B2
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current
wiring
test
temperature
semiconductor device
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JP2001313320A (ja
JP2001313320A5 (enExample
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博基 近藤
貴志 鈴木
紀嘉 清水
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Fujitsu Ltd
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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2000130404A 2000-04-28 2000-04-28 半導体装置の試験方法及び試験装置 Expired - Fee Related JP4322396B2 (ja)

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JP2000130404A JP4322396B2 (ja) 2000-04-28 2000-04-28 半導体装置の試験方法及び試験装置

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JP2000130404A JP4322396B2 (ja) 2000-04-28 2000-04-28 半導体装置の試験方法及び試験装置

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JP2001313320A JP2001313320A (ja) 2001-11-09
JP2001313320A5 JP2001313320A5 (enExample) 2006-09-28
JP4322396B2 true JP4322396B2 (ja) 2009-08-26

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JP4173306B2 (ja) 2001-11-30 2008-10-29 東京エレクトロン株式会社 信頼性評価試験装置、信頼性評価試験システム及び信頼性評価試験方法
JP7126681B2 (ja) * 2018-05-08 2022-08-29 国立大学法人東海国立大学機構 金属膜の製造方法

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