JP4316026B2 - マスクパターンの作製方法及びフォトマスク - Google Patents

マスクパターンの作製方法及びフォトマスク Download PDF

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Publication number
JP4316026B2
JP4316026B2 JP18243198A JP18243198A JP4316026B2 JP 4316026 B2 JP4316026 B2 JP 4316026B2 JP 18243198 A JP18243198 A JP 18243198A JP 18243198 A JP18243198 A JP 18243198A JP 4316026 B2 JP4316026 B2 JP 4316026B2
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JP
Japan
Prior art keywords
correction
mask
pattern
corrected
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP18243198A
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English (en)
Japanese (ja)
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JP2000019708A5 (https=
JP2000019708A (ja
Inventor
聡 田中
敏也 小谷
壮一 井上
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Toshiba Corp
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Toshiba Corp
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Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP18243198A priority Critical patent/JP4316026B2/ja
Priority to US09/340,148 priority patent/US6180293B1/en
Publication of JP2000019708A publication Critical patent/JP2000019708A/ja
Publication of JP2000019708A5 publication Critical patent/JP2000019708A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP18243198A 1998-06-29 1998-06-29 マスクパターンの作製方法及びフォトマスク Expired - Fee Related JP4316026B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP18243198A JP4316026B2 (ja) 1998-06-29 1998-06-29 マスクパターンの作製方法及びフォトマスク
US09/340,148 US6180293B1 (en) 1998-06-29 1999-06-28 Mask pattern preparing method and photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18243198A JP4316026B2 (ja) 1998-06-29 1998-06-29 マスクパターンの作製方法及びフォトマスク

Publications (3)

Publication Number Publication Date
JP2000019708A JP2000019708A (ja) 2000-01-21
JP2000019708A5 JP2000019708A5 (https=) 2005-09-22
JP4316026B2 true JP4316026B2 (ja) 2009-08-19

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ID=16118160

Family Applications (1)

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JP18243198A Expired - Fee Related JP4316026B2 (ja) 1998-06-29 1998-06-29 マスクパターンの作製方法及びフォトマスク

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US (1) US6180293B1 (https=)
JP (1) JP4316026B2 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4876299B2 (ja) * 2000-05-16 2012-02-15 大日本印刷株式会社 フォトマスクパタンデータ作成方法
JP4580529B2 (ja) * 2000-09-26 2010-11-17 大日本印刷株式会社 半導体回路の設計パタンデータ補正方法と、補正された設計パタンデータを用いたフォトマスク、該フォトマスクの検査方法およびフォトマスク検査用パタンデータ作製方法
US6602728B1 (en) * 2001-01-05 2003-08-05 International Business Machines Corporation Method for generating a proximity model based on proximity rules
JP2003029392A (ja) * 2001-07-11 2003-01-29 Dainippon Printing Co Ltd 描画用データの作成方法および描画方法
US7062342B1 (en) 2002-05-24 2006-06-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for foundry tape-out service request
JP2005533283A (ja) * 2002-07-12 2005-11-04 ケイデンス デザイン システムズ インコーポレイテッド コンテクスト特定のマスク書込のための方法及びシステム
JP2006171113A (ja) * 2004-12-13 2006-06-29 Toshiba Corp マスクデータ作成装置、マスクデータ作成方法、露光マスク、半導体装置の製造方法及びマスクデータ作成プログラム
US7562333B2 (en) * 2004-12-23 2009-07-14 Texas Instruments Incorporated Method and process for generating an optical proximity correction model based on layout density
US7650587B2 (en) * 2006-11-30 2010-01-19 International Business Machines Corporation Local coloring for hierarchical OPC
KR101264114B1 (ko) 2007-08-31 2013-05-13 삼성전자주식회사 포토마스크 레이아웃의 생성 방법 및 이를 수행하는프로그래밍된 명령을 저장하는 컴퓨터에서 판독 가능한저장 매체 및 마스크 이미징 시스템
JP4551937B2 (ja) * 2008-02-12 2010-09-29 株式会社東芝 パターン形成方法
US20160026079A1 (en) * 2014-07-25 2016-01-28 Kabushiki Kaisha Toshiba Mask pattern correcting method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3334441B2 (ja) * 1995-08-01 2002-10-15 ソニー株式会社 フォトマスク描画用パターンデータ補正方法と補正装置
JP3680425B2 (ja) 1996-06-19 2005-08-10 ソニー株式会社 フォトマスクの作製方法、及び、レジスト材料への電子線ビーム照射補正量の決定方法
US5821014A (en) * 1997-02-28 1998-10-13 Microunity Systems Engineering, Inc. Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask
US5994009A (en) * 1997-11-17 1999-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. Interlayer method utilizing CAD for process-induced proximity effect correction
US6051347A (en) * 1999-03-18 2000-04-18 Taiwan Semiconductor Manufacturing Company Application of e-beam proximity over-correction to compensate optical proximity effect in optical lithography process

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Publication number Publication date
JP2000019708A (ja) 2000-01-21
US6180293B1 (en) 2001-01-30

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