JP4303765B2 - ＳｉＣ半導体、半導体用基板、粉末及び窒化物半導体発光ダイオード - Google Patents

ＳｉＣ半導体、半導体用基板、粉末及び窒化物半導体発光ダイオード Download PDF

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Publication number
JP4303765B2
JP4303765B2 JP2007165729A JP2007165729A JP4303765B2 JP 4303765 B2 JP4303765 B2 JP 4303765B2 JP 2007165729 A JP2007165729 A JP 2007165729A JP 2007165729 A JP2007165729 A JP 2007165729A JP 4303765 B2 JP4303765 B2 JP 4303765B2
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Prior art keywords
sic
light
layer
wavelength
phosphor
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Expired - Lifetime
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JP2007165729A
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Japanese (ja)
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JP2007254759A5 (enExample
JP2007254759A (ja
Inventor
博之 木下
弘 塩見
信 佐々木
利彦 林
浩 天野
智 上山
素顕 岩谷
勇 赤崎
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学校法人 名城大学
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Priority to JP2007165729A priority Critical patent/JP4303765B2/ja
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Publication of JP2007254759A5 publication Critical patent/JP2007254759A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

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JP2007165729A 2003-11-28 2007-06-25 ＳｉＣ半導体、半導体用基板、粉末及び窒化物半導体発光ダイオード Expired - Lifetime JP4303765B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007165729A JP4303765B2 (ja) 2003-11-28 2007-06-25 ＳｉＣ半導体、半導体用基板、粉末及び窒化物半導体発光ダイオード

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003399992 2003-11-28
JP2007165729A JP4303765B2 (ja) 2003-11-28 2007-06-25 ＳｉＣ半導体、半導体用基板、粉末及び窒化物半導体発光ダイオード

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2004087110A Division JP4153455B2 (ja) 2003-11-28 2004-03-24 蛍光体および発光ダイオード

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2008277235A Division JP4303776B2 (ja) 2003-11-28 2008-10-28 ＳｉＣ半導体、半導体用基板、粉末及び発光ダイオード
JP2009027818A Division JP4961443B2 (ja) 2003-11-28 2009-02-09 発光ダイオード

Publications (3)

Publication Number Publication Date
JP2007254759A JP2007254759A (ja) 2007-10-04
JP2007254759A5 JP2007254759A5 (enExample) 2008-12-11
JP4303765B2 true JP4303765B2 (ja) 2009-07-29

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JP2007165729A Expired - Lifetime JP4303765B2 (ja) 2003-11-28 2007-06-25 ＳｉＣ半導体、半導体用基板、粉末及び窒化物半導体発光ダイオード

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JP (1) JP4303765B2 (enExample)

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JP2007254759A (ja) 2007-10-04

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