JP4295747B2 - 荷電粒子ビームを集束する方法およびシステム - Google Patents
荷電粒子ビームを集束する方法およびシステム Download PDFInfo
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- JP4295747B2 JP4295747B2 JP2005180723A JP2005180723A JP4295747B2 JP 4295747 B2 JP4295747 B2 JP 4295747B2 JP 2005180723 A JP2005180723 A JP 2005180723A JP 2005180723 A JP2005180723 A JP 2005180723A JP 4295747 B2 JP4295747 B2 JP 4295747B2
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- 238000000034 method Methods 0.000 title claims description 36
- 239000002245 particle Substances 0.000 title claims description 34
- 238000007689 inspection Methods 0.000 claims description 41
- 238000001514 detection method Methods 0.000 claims description 26
- 238000012545 processing Methods 0.000 claims description 15
- 230000004044 response Effects 0.000 claims description 12
- 238000005286 illumination Methods 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 4
- 238000013519 translation Methods 0.000 claims description 2
- 238000013507 mapping Methods 0.000 description 23
- 238000012937 correction Methods 0.000 description 19
- 230000008859 change Effects 0.000 description 14
- 238000006073 displacement reaction Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000003252 repetitive effect Effects 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000011149 active material Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/21—Means for adjusting the focus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/21—Focus adjustment
- H01J2237/216—Automatic focusing methods
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- Analytical Chemistry (AREA)
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- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Description
Claims (10)
- 荷電粒子ビームを集束する方法であって、
(a)第1の焦点パターンに従って荷電粒子ビームの焦点を変更し、同時にサンプルの第1の区域を走査すると共に検出信号の第1のセットを収集するステップと、
(b)第2の焦点パターンに従って前記荷電粒子ビームの焦点を変更し、同時に前記サンプルの第1の区域と理想的に同一の第2の区域を走査すると共に検出信号の第2のセットを収集するステップと、
(c)検出信号の前記第1のセットおよび検出信号の前記第2のセットを処理して焦点特性を決定するステップと、
を含み、
前記第1の焦点パターンと前記第2の焦点パターンとが、前記荷電粒子ビームを含む検査システムの焦点変化要素の応答時間に応答して決定され、各焦点パターンに対する最適焦点のロケーションによって異なっている、方法。 - 前記第1の焦点パターンが不足焦点の点および過焦点の点を備える、請求項1に記載の方法。
- 更に、前記第1の区域と理想的に同一の第3の区域から検出信号の第3のセットを収集するステップを含み、前記処理するステップが更に検出信号の前記第3のセットを処理する工程を含む、請求項1に記載の方法。
- 更に、前記第1の区域と理想的に同一の参照区域を走査し、同時にほぼ一定の焦点を維持して検出信号の参照セットを収集するステップを含み、前記処理するステップが更に検出信号の前記参照セットを処理する工程を含む、請求項1に記載の方法。
- 前記変更するステップが、機械的平行移動を含む、請求項1に記載の方法。
- 前記変更するステップが、荷電粒子ビームが伝搬する照明路の特性の変更を含む、請求項1に記載の方法。
- 前記変更するステップが、荷電ビームデバイスの少なくとも1つの要素と前記サンプルの表面との間の推定空間関係に応答する、請求項1に記載の方法。
- 前記第1の焦点パターンが傾斜を備える、請求項1に記載の方法。
- 前記第1の区域が第1のサブエリアグループを含み、前記第2の区域が第2のサブエリアグループを備える、請求項1に記載の方法。
- 前記処理するステップが、
各々のサブエリアからの検出信号を処理してサブエリアのグレードを提供する工程、
各々のサブエリアのグレードに応答して前記焦点特性を決定する工程、
を含む、請求項9に記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US58185404P | 2004-06-21 | 2004-06-21 |
Publications (3)
Publication Number | Publication Date |
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JP2006012822A JP2006012822A (ja) | 2006-01-12 |
JP2006012822A5 JP2006012822A5 (ja) | 2008-08-07 |
JP4295747B2 true JP4295747B2 (ja) | 2009-07-15 |
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JP2005180723A Active JP4295747B2 (ja) | 2004-06-21 | 2005-06-21 | 荷電粒子ビームを集束する方法およびシステム |
Country Status (3)
Country | Link |
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US (2) | US7375326B2 (ja) |
JP (1) | JP4295747B2 (ja) |
KR (2) | KR101239333B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8724122B2 (en) | 2010-02-25 | 2014-05-13 | Toyota Jidosha Kabushiki Kaisha | Bead inspection method, and bead inspection apparatus |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
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US7375326B2 (en) * | 2004-06-21 | 2008-05-20 | Applied Materials, Israel, Ltd. | Method and system for focusing a charged particle beam |
US8642959B2 (en) | 2007-10-29 | 2014-02-04 | Micron Technology, Inc. | Method and system of performing three-dimensional imaging using an electron microscope |
US7759642B2 (en) * | 2008-04-30 | 2010-07-20 | Applied Materials Israel, Ltd. | Pattern invariant focusing of a charged particle beam |
DE102015202172B4 (de) | 2015-02-06 | 2017-01-19 | Carl Zeiss Microscopy Gmbh | Teilchenstrahlsystem und Verfahren zur teilchenoptischen Untersuchung eines Objekts |
CN108027499B (zh) * | 2015-09-23 | 2021-02-12 | 科磊股份有限公司 | 用于多波束扫描式电子显微系统的聚焦调整的方法及系统 |
DE102018202428B3 (de) | 2018-02-16 | 2019-05-09 | Carl Zeiss Microscopy Gmbh | Vielstrahl-Teilchenmikroskop |
DE102018202421B3 (de) | 2018-02-16 | 2019-07-11 | Carl Zeiss Microscopy Gmbh | Vielstrahl-Teilchenstrahlsystem |
WO2019166331A2 (en) | 2018-02-27 | 2019-09-06 | Carl Zeiss Microscopy Gmbh | Charged particle beam system and method |
US10811215B2 (en) | 2018-05-21 | 2020-10-20 | Carl Zeiss Multisem Gmbh | Charged particle beam system |
DE102018007455B4 (de) | 2018-09-21 | 2020-07-09 | Carl Zeiss Multisem Gmbh | Verfahren zum Detektorabgleich bei der Abbildung von Objekten mittels eines Mehrstrahl-Teilchenmikroskops, System sowie Computerprogrammprodukt |
DE102018007652B4 (de) | 2018-09-27 | 2021-03-25 | Carl Zeiss Multisem Gmbh | Teilchenstrahl-System sowie Verfahren zur Stromregulierung von Einzel-Teilchenstrahlen |
DE102018124044B3 (de) | 2018-09-28 | 2020-02-06 | Carl Zeiss Microscopy Gmbh | Verfahren zum Betreiben eines Vielstrahl-Teilchenstrahlmikroskops und Vielstrahl-Teilchenstrahlsystem |
CN111477530B (zh) | 2019-01-24 | 2023-05-05 | 卡尔蔡司MultiSEM有限责任公司 | 利用多束粒子显微镜对3d样本成像的方法 |
TWI743626B (zh) | 2019-01-24 | 2021-10-21 | 德商卡爾蔡司多重掃描電子顯微鏡有限公司 | 包含多束粒子顯微鏡的系統、對3d樣本逐層成像之方法及電腦程式產品 |
DE102019005362A1 (de) | 2019-07-31 | 2021-02-04 | Carl Zeiss Multisem Gmbh | Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem |
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- 2005-06-17 US US11/155,044 patent/US7375326B2/en active Active
- 2005-06-21 JP JP2005180723A patent/JP4295747B2/ja active Active
- 2005-06-21 KR KR1020050053546A patent/KR101239333B1/ko active IP Right Grant
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Cited By (1)
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US8724122B2 (en) | 2010-02-25 | 2014-05-13 | Toyota Jidosha Kabushiki Kaisha | Bead inspection method, and bead inspection apparatus |
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KR101291099B1 (ko) | 2013-08-01 |
US7375326B2 (en) | 2008-05-20 |
KR20120084279A (ko) | 2012-07-27 |
US20060049364A1 (en) | 2006-03-09 |
US7535001B2 (en) | 2009-05-19 |
JP2006012822A (ja) | 2006-01-12 |
US20080011964A1 (en) | 2008-01-17 |
KR101239333B1 (ko) | 2013-03-05 |
KR20060048460A (ko) | 2006-05-18 |
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