JP4286981B2 - 枚葉式熱処理装置 - Google Patents
枚葉式熱処理装置 Download PDFInfo
- Publication number
- JP4286981B2 JP4286981B2 JP20732799A JP20732799A JP4286981B2 JP 4286981 B2 JP4286981 B2 JP 4286981B2 JP 20732799 A JP20732799 A JP 20732799A JP 20732799 A JP20732799 A JP 20732799A JP 4286981 B2 JP4286981 B2 JP 4286981B2
- Authority
- JP
- Japan
- Prior art keywords
- processing chamber
- processing
- susceptor
- heat treatment
- lid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010438 heat treatment Methods 0.000 title claims description 50
- 238000012545 processing Methods 0.000 claims description 101
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 239000010453 quartz Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 10
- 239000006200 vaporizer Substances 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000011344 liquid material Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 53
- 235000012431 wafers Nutrition 0.000 description 38
- 239000004065 semiconductor Substances 0.000 description 26
- 238000011109 contamination Methods 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 239000006227 byproduct Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 12
- 239000002245 particle Substances 0.000 description 9
- 238000005260 corrosion Methods 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 238000009833 condensation Methods 0.000 description 5
- 230000005494 condensation Effects 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- -1 for example Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Images
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- Chemical Vapour Deposition (AREA)
- Muffle Furnaces And Rotary Kilns (AREA)
- Furnace Details (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20732799A JP4286981B2 (ja) | 1999-07-22 | 1999-07-22 | 枚葉式熱処理装置 |
| US09/549,343 US6402848B1 (en) | 1999-04-23 | 2000-04-13 | Single-substrate-treating apparatus for semiconductor processing system |
| KR1020000020918A KR100574116B1 (ko) | 1999-04-23 | 2000-04-20 | 반도체 처리 시스템의 매엽식 처리 장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20732799A JP4286981B2 (ja) | 1999-07-22 | 1999-07-22 | 枚葉式熱処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001035799A JP2001035799A (ja) | 2001-02-09 |
| JP2001035799A5 JP2001035799A5 (enExample) | 2006-08-24 |
| JP4286981B2 true JP4286981B2 (ja) | 2009-07-01 |
Family
ID=16537930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20732799A Expired - Fee Related JP4286981B2 (ja) | 1999-04-23 | 1999-07-22 | 枚葉式熱処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4286981B2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4569042B2 (ja) * | 2001-05-18 | 2010-10-27 | 東京エレクトロン株式会社 | 熱処理装置 |
| JP4354908B2 (ja) * | 2002-06-10 | 2009-10-28 | 東京エレクトロン株式会社 | 処理装置 |
| JP5010235B2 (ja) * | 2006-10-26 | 2012-08-29 | 株式会社ニューフレアテクノロジー | 気相成長方法 |
| JP5107185B2 (ja) * | 2008-09-04 | 2012-12-26 | 東京エレクトロン株式会社 | 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体 |
| US9076742B2 (en) * | 2010-11-05 | 2015-07-07 | Sharp Kabushiki Kaisha | Oxidation annealing device and method for fabricating thin film transistor using oxidation annealing |
| JP5541406B2 (ja) * | 2012-08-28 | 2014-07-09 | 三菱マテリアル株式会社 | セメント製造装置 |
-
1999
- 1999-07-22 JP JP20732799A patent/JP4286981B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001035799A (ja) | 2001-02-09 |
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