JP4286872B2 - Semiconductor device provided with light receiving means, semiconductor device inspection method, and semiconductor device inspection device - Google Patents

Description

  The present invention relates to a semiconductor device having a light receiving means, a method for inspecting the semiconductor device, and a semiconductor device inspection apparatus, and in particular, inspecting the light receiving means and the function of the semiconductor device by irradiating light. The present invention relates to a semiconductor device in which a plurality of semiconductor devices that need to be performed can be arranged in a plane and inspected at once, an inspection method for the semiconductor device, and a semiconductor device inspection apparatus.

  In recent years, with an increase in demand for camera-equipped mobile phones and digital cameras, demand for image pickup devices such as CCDs and CMOS image sensors has increased. Therefore, the production volume of imaging devices is also increasing, and in order to solve the lack of inspection capability of manufactured devices at the production site, multiple simultaneous measurement methods that inspect multiple manufactured devices at the same time are incorporated into the inspection. It has been.

  For example, when a semiconductor integrated circuit device formed on a wafer is inspected, a method of inspecting a plurality of devices 810 arranged in a line at once as shown in FIG.

  FIG. 10 is a plan view showing a conventional method for inspecting a plurality of semiconductor integrated circuit devices 810 formed on a wafer 800 simultaneously. Conventionally, for example, as shown in FIG. 10, a plurality of devices 810 are arranged vertically in a row, and the probe of the probe card 910 used for inspection on the electrode pad 813 of each device 810 (hereinafter referred to as probe probe 920). It shows how they are connected and inspected.

  In the conventional method as shown in FIG. 10, the electrode pad 813 provided on the device 810 cannot be formed so small that the probe probe 920 used for inspection can be easily connected. Also, in order to easily connect the probe tip 920, these electrode pads 813 are often formed along the periphery of the device 810. Further, a technique is disclosed in which the electrode pad 813 is not provided in a portion where the device 810 is arranged vertically so that the probe probe 920 can be easily connected to the electrode pad 813 of the device 810.

  FIG. 11 is a plan view showing a case where electrode pads 813a are provided on the left and right sides of the device.

  In the inspection process of the device 810a, the devices 810a provided with the electrode pads 813a as shown in FIG. 11 are arranged in a line vertically. In the inspection, the probe tips 920 are simultaneously brought into contact with the electrode pads 813a arranged in a row to be electrically connected to the inspection apparatus, and the plurality of devices 810a are simultaneously inspected.

  If comprised in this way, the probe probe 920 provided along the opening part 930 of the probe card 910 can be connected to two right and left sides of the device 810a arranged in a line vertically. Therefore, the probe probe can be easily connected as compared with the case where the probe probe is connected to the four sides of the device.

  Patent Document 1 discloses a technique for providing an inspection electrode pad only on one side of a device as a method for easily connecting a probe probe. FIG. 12 is a plan view of the device 810b disclosed in Patent Document 1, and FIG. 13 is a plan view showing a state of connection of the probe probe 920 by the probe card 910 using the device 810b disclosed in Patent Document 1. FIG. When the device 810b as disclosed in Patent Document 1 is used, the probe probe 920 that inspects each device 810b only needs to be connected to the electrode pad 813b on one side of the device 810b. Two probes 810b arranged side by side at the same time can be easily inspected by the probe probe 920 provided along two sides of the opening 930.

Patent Document 2 discloses a technique for inspecting a plurality of devices that perform inspection by irradiating light onto a chip. When inspecting an image pickup device formed on a wafer, it is indispensable to irradiate the chip with light as disclosed in Patent Document 2. In Patent Document 2, a configuration in which a process of inspecting a chip by irradiating light with a process of inspecting a chip without irradiating light is simultaneously inspected, and a plurality of devices are inspected simultaneously.
JP-A-5-47874 (published February 26, 1993) JP 2002-217253 A (published August 2, 2002)

  However, the above-described conventional configuration has a problem in that it is impossible to inspect at once a device that needs to be inspected by irradiating light.

  As described above, in a device that needs to be inspected by irradiating light onto the chip, (1) a step of irradiating the device with light for inspection, and (2) a probe probe on the device It is necessary to perform the process of connecting and inspecting at the same time. However, when performing such an inspection by arranging a plurality of devices in a plane, there is a problem that the probe probe for inspection blocks the upper part of the device to be destroyed, and the device cannot be irradiated with light. Arise.

  Patent Document 2 discloses a technique for performing an inspection with a configuration as shown in FIG. 14, for example. FIG. 14 is a plan view showing a state in which the step of performing inspection by irradiating the chip 810c with light (chip A) and the step of performing inspection without irradiating the chip 810c (chip B) are simultaneously inspected. is there.

  When the inspection is performed by irradiating the chip 810c with light, the upper part of the device 810c that needs to irradiate light as shown in the chip A of FIG. Therefore, the probe probe 920 for inspecting the chip A needs to be formed so as not to block the upper part of the chip A.

  For the above reason, in FIG. 14, the probe probe 920 for inspecting the chip A is also connected to the chip A through the upper part of the chip B. As a result, the upper part of the chip B is blocked by the probe probe 920, and the chip B cannot be inspected by irradiating light.

  Further, in the configuration in which the electrode pads for inspection are provided on the left and right sides of the device, or in the configuration in which the electrode pads for inspection are provided on only one side of the device as in Patent Document 1, as shown in FIG. Although it is possible to connect the probe probes without blocking the upper portions of the devices in the row, the upper portions of the devices in the adjacent rows are covered by the probe probes. That is, it was not possible to simultaneously inspect a device in which inspections that need to be irradiated with light are arranged in a plane.

  Further, as described in Patent Document 2, in the configuration in which the inspection is performed by irradiating the chip 810c with light and the inspection is performed without irradiating the chip 810c with light, light irradiation is performed. The necessary inspections and the inspections that do not require light irradiation are performed in order, and eventually the separate inspections are performed in order. Therefore, the number of devices that can be simultaneously inspected in the same process is not increased.

  Furthermore, in the method described in Patent Document 2, since the inspection is performed by irradiating the chip 810c with light and the inspection is performed without irradiating the chip 810c with light, such inspection is performed. An inspection apparatus 900 (tester) for performing a plurality of inspection processes needs to be performed simultaneously. That is, a dedicated inspection apparatus capable of performing such a complicated inspection is required, and the test itself becomes large.

  The present invention has been made in view of the above-described conventional problems, and an object thereof is to receive light that can be inspected at once by arranging a device that needs to be inspected by irradiating light. And a semiconductor device inspection method and a semiconductor device inspection apparatus.

  Light receiving means on the surface of the substrate, inspection means electrically connected to the light receiving means and inspecting the operation of the light receiving means, and processing signals electrically connected to the inspection means and performed by the inspection means A plurality of processing signal electrode portions for transmitting to the outside, and the processing signal electrode portions are outer edge portions of a pair of opposing sides on the substrate, and each of the pair of sides is provided. It is characterized by being provided in pairs.

  Since the semiconductor device includes light receiving means on the surface of the substrate, in order to perform inspection by irradiating the light receiving means with light, (1) a step of irradiating the semiconductor device with light for inspection; 2) It is necessary to simultaneously perform a process of connecting and inspecting a probe tip to a semiconductor device. In order to perform these two processes simultaneously, it is necessary that the light receiving means provided in the semiconductor device can receive light without being blocked by the inspection light.

  According to the above configuration, the processing signal electrode portion is provided on each of the outer edge portions of the pair of sides facing each other of the substrate of the semiconductor device, and the processing signal electrode portion formed on any side can be used as described above. A processing signal can be input and output to the inspection means. Therefore, when inspecting the operation of the semiconductor device, if a connection terminal (probe probe) that is electrically connected to the semiconductor device is connected to a processing signal electrode portion provided on any side of the semiconductor device. Good.

  That is, for example, when the semiconductor devices are arranged in two rows so that the processing signal electrode portions each form a row, the probe probe is placed on the processing signal electrode portion provided on the outermost side of the arranged semiconductor devices. If all the semiconductor devices are inspected, the probe probe does not pass through the upper part of the light receiving means of the semiconductor device.

  Each of the set of processing signal electrode portions provided on one of the sides on the substrate is electrically connected to the set of processing signal electrode portions on the other side, respectively. Also good.

  According to the above configuration, the processing signal acting on the processing signal electrode portion provided on one side of the substrate also acts on the other processing signal electrode in the same manner.

  Further, a light receiving signal processing means that is electrically connected to the light receiving means and controls the operation of the light receiving means, and between the inspection means and the processing signal electrode unit, and the light receiving signal processing means and the above An operation switching unit electrically connected to the processing signal electrode unit, and a plurality of control signal electrode units electrically connected to the operation switching unit, the control signal electrode unit comprising: A pair of opposing edges on the substrate, and one set is provided on each of the pair of sides, and the operation switching means is controlled by a control signal input to the control signal electrode unit. The connection destination of the processing signal electrode unit may be selected from the inspection unit and the light reception signal processing unit. Further, each of the set of control signal electrode portions provided on one of the sides on the substrate is electrically connected to the set of control signal electrode portions on the other side, respectively. Also good.

  According to the above configuration, an electrode pad (electrode portion) used when the light receiving means is normally used can be used for the inspection of the semiconductor device. With this configuration, the number of electrode pads provided on the substrate can be reduced, and the area of the substrate can be reduced.

  Further, it further comprises output selection means electrically connected between the operation switching means and the processing signal electrode section, and the output selection means is controlled by a control signal input to the control signal electrode section. The connection between the operation switching means and the processing signal electrode unit may be intermittent.

  According to the above configuration, when the processing signal electrode unit and the operation switching unit are connected, the light receiving light is transmitted to the processing signal electrode unit provided on each opposite side of the substrate via the operation switching unit. A processing signal to be input and output is transmitted to the signal processing means or the inspection means. Further, when the connection is released, the processing signal electrode portions provided on the respective sides on the substrate remain electrically connected to each other, so that the processing input to the processing signal electrode portion on the one side is performed. The signal is output as it is to the processing signal electrode portion on the other side.

  That is, when the output selection unit releases the connection between the processing signal electrode unit and the operation switching unit, the operation of the semiconductor device is not performed between the two sets of processing signal electrode units provided in the semiconductor device. It can be set to transmit irrelevant processing signals.

  For this reason, for example, when the semiconductor device is arranged so that the processing signal electrode portions form columns, and the processing signal electrode portions adjacent to each other between the semiconductor devices are electrically connected to each other, A processing signal can be inputted / outputted to / from a light receiving signal processing means or an inspection means of an arbitrary semiconductor device from the processing signal electrode portion provided on the outermost side of the semiconductor device arranged in a plane by interruption of the output selection means. Therefore, the probe probe can be electrically connected to an arbitrary semiconductor device without passing through the upper part of the light receiving means of the semiconductor device.

  The control signal electrode portion may be electrically connected to the resistance means, and the resistance means may be connected to the ground electrode portion of the semiconductor device.

  According to the above configuration, the potential of the control signal electrode portion can be set to the potential of the ground electrode portion (ground potential) of the semiconductor device in a state where the semiconductor device is normally used. Therefore, it is possible to prevent electrical noise from entering the control signal electrode portion and the like, and the semiconductor device from being in an operation state for inspection due to a malfunction.

  In order to solve the above problems, a semiconductor device inspection apparatus according to the present invention is a semiconductor device inspection apparatus that simultaneously inspects a plurality of the semiconductor devices described above, wherein the processing signal electrode portions of the plurality of semiconductor devices are arranged in rows. The semiconductor device is arranged in a plane, and the semiconductor device inspection device includes a probe probe for electrically connecting the semiconductor device, and the semiconductor device. An optical system for irradiating light to the light receiving means, and the probe probe is brought into contact with the processing signal electrode portion provided on the outermost side of the arranged semiconductor devices, and the light receiving is received from the optical system. The semiconductor device is inspected by irradiating the means with light.

  According to said structure, a semiconductor device is planar and the said process signal electrode part is arrange | positioned so that each may form a row | line | column.

  And since the processing signal electrode part provided on the outermost side of the arranged semiconductor devices and the probe probe are connected, the probe probe does not pass through the upper part of the light receiving means of the semiconductor device, and the semiconductor device is inspected. It can be performed.

  Further, the semiconductor device is an outer edge portion of a pair of opposing sides on a substrate on which the semiconductor device is provided, and a control signal electrode portion provided for each of the pair of sides; Output control means for interrupting electrical connection between the inspection means and the processing signal electrode section according to a control signal input to the control signal electrode section, and the inspection apparatus includes the aligned semiconductors The probe probe may be brought into contact with the control signal electrode portion provided on the outermost side of the apparatus, and a control signal may be input to the control signal electrode portion to control the output selection means.

  According to the above configuration, since the control signal electrode portion provided on the outermost side of the semiconductor device arranged in a plane and the probe probe are connected, the probe probe is located above the light receiving means of the semiconductor device. The semiconductor device can be inspected without passing through.

  The control signal electrode portion is an outer edge portion of a pair of opposing sides on the substrate on which the semiconductor device is provided, and one set is provided on each of the pair of sides. Therefore, when at least the semiconductor devices are arranged in two rows, the probe probes can be connected without passing through the upper part of the light receiving means provided in each semiconductor device.

  For this reason, the electrical connection between the inspection means and the processing signal electrode portion of any semiconductor device can be interrupted by the control signal input from the control signal electrode portion for the operation inside the semiconductor device.

  For example, the semiconductor device may have a configuration in which two rows are arranged, or the semiconductor device is arranged in eight rows, and is arranged between four rows from the outside of the row. Each of the pair of adjacent processing signal electrode portions and the control signal electrode portions may be electrically connected to each other, or more semiconductor devices may be arranged in a planar shape. In addition, any semiconductor device can be inspected.

  In order to solve the above problems, a semiconductor device inspection method of the present invention is an inspection method for simultaneously inspecting a plurality of the semiconductor devices described above, wherein the processing signal electrode portions of the plurality of semiconductor devices are arranged in rows. A semiconductor device arranging step in which the semiconductor device is arranged in a plane, and a processing signal electrode portion provided on the outermost side of the arranged semiconductor devices for inspecting the semiconductor device. A probe probe connecting step for electrically connecting the probe tip and a light irradiation step for irradiating the light receiving means with light are characterized.

  According to the above configuration, first, the semiconductor device is planarly arranged by the semiconductor device arrangement step, and the processing signal electrode portions are arranged in rows.

  In the method for inspecting a semiconductor device of the present invention, the processing signal electrode portion of each semiconductor device is provided on the outer edge of a pair of opposing sides on the substrate. Therefore, the semiconductor device can be inspected using the processing signal electrode portions provided on any of the above sides.

  In the probe probe connecting step, the probe probe for inspecting the semiconductor device is electrically connected to the processing signal electrode provided on the outermost side of the arranged semiconductor devices. The semiconductor device can be inspected without passing through the upper part of the light receiving means of the semiconductor device. In particular, when the semiconductor devices are arranged in two rows, the probe probe can be connected without passing through the upper part of the light receiving means provided in each semiconductor device.

  Further, the semiconductor device is an outer edge portion of a pair of opposing sides on a substrate on which the semiconductor device is provided, and a control signal electrode portion is provided on each of the pair of sides, Output control means for interrupting electrical connection between the inspection means and the processing signal electrode section according to a control signal input to the control signal electrode section, and in the probe probe connection step, A probe probe for inspecting the semiconductor device is electrically connected to a control signal electrode portion provided on the outermost side of the arranged semiconductor devices, and further following the probe probe connection step, the control signal electrode is further connected. The semiconductor device control step of inputting the control signal to the unit and controlling the output selection means may be performed.

  In the semiconductor device inspection method of the present invention, the control signal electrode portions of the respective semiconductor devices are provided on the outer edge portions of a pair of opposing sides on the substrate. Therefore, the electrical connection between the inspection means and the processing signal electrode portion of any semiconductor device can be interrupted even if the control signal electrode portion provided on any of the above-described sides is used.

  Further, since the probe probe is electrically connected to the control signal electrode portion provided on the outermost side of the arranged semiconductor device, the probe probe does not pass through the upper part of the light receiving means of the semiconductor device. Can be inspected. In particular, when the semiconductor devices are arranged in two rows, the probe probe can be connected without passing through the upper part of the light receiving means provided in each semiconductor device.

  For example, in the semiconductor device arranging step, the semiconductor device is arranged in every 8 rows, and the processing signal electrode portion and the control signal adjacent to each other between the semiconductor devices arranged between 4 rows from the outside of the row. A configuration that is a process of electrically connecting the electrode portions to each other can be considered, but the electrical connection between the inspection means and the processing signal electrode portion is limited to only one semiconductor device among the four rows of semiconductor devices arranged side by side. If a general connection is connected and others are disconnected, an arbitrary semiconductor device can be inspected using a processing signal electrode portion provided on the outermost side of the arranged semiconductor devices.

  As described above, the semiconductor device of the present invention is electrically connected to the surface of the substrate, the light receiving means, the inspection means electrically connected to the light receiving means and inspecting the operation of the light receiving means, and the inspection means. And a plurality of processing signal electrode portions for transmitting processing signals performed by the inspection means from the substrate to the outside, wherein the processing signal electrode portions are outer edge portions of a pair of opposing sides on the substrate. And one set is provided on each of the pair of sides.

  Since the semiconductor device includes light receiving means on the surface of the substrate, in order to perform inspection by irradiating the light receiving means with light, (1) a step of irradiating the semiconductor device with light for inspection; 2) It is necessary to simultaneously perform a process of connecting and inspecting a probe tip to a semiconductor device. In order to perform these two processes simultaneously, it is necessary that the light receiving means provided in the semiconductor device can receive light without being blocked by the inspection light.

  According to the above configuration, the processing signal electrode unit is provided on each of the outer edge portions of the pair of opposing sides of the substrate of the semiconductor device, and the processing signal electrode unit formed on any side can be used. A processing signal can be input and output to the inspection means. Therefore, when inspecting the operation of the semiconductor device, if a connection terminal (probe probe) that is electrically connected to the semiconductor device is connected to a processing signal electrode portion provided on any side of the semiconductor device. Good.

  In other words, when at least the semiconductor devices are arranged in two rows so that the processing signal electrode portions each form a row, the probe probe is placed on the processing signal electrode portion provided on the outermost side of the arranged semiconductor devices. If the needles are connected, all the semiconductor devices can be inspected without the probe probe passing through the upper part of the light receiving means of the semiconductor device.

  In the semiconductor device inspection apparatus of the present invention, as described above, the processing signal electrode portions of a plurality of the semiconductor devices are arranged so as to form columns, and the semiconductor devices are arranged in a plane. The semiconductor device inspection device includes a probe probe for electrically connecting the semiconductor device, and an optical system for irradiating light to the light receiving means provided in the semiconductor device, and arranged as described above. The probe probe is brought into contact with the processing signal electrode portion provided on the outermost side of the semiconductor device, and the semiconductor device is inspected by irradiating light to the light receiving means from the optical system.

  According to said structure, a semiconductor device is planar and the said process signal electrode part is arrange | positioned so that each may form a row | line | column.

  And since the processing signal electrode part provided on the outermost side of the arranged semiconductor devices and the probe probe are connected, the probe probe does not pass through the upper part of the light receiving means of the semiconductor device, and the semiconductor device is inspected. It can be performed.

  In the semiconductor device inspection method of the present invention, as described above, the processing signal electrode portions of the plurality of semiconductor devices are arranged so as to form columns, and the semiconductor device is arranged in a plane. An arrangement step, a probe probe connecting step for electrically connecting a probe probe for inspecting the semiconductor device to a processing signal electrode portion provided on the outermost side of the arranged semiconductor devices, and the light reception And a light irradiation step of irradiating the means with light.

  According to the above configuration, first, the semiconductor device is planarly arranged by the semiconductor device arrangement step, and the processing signal electrode portions are arranged in rows.

  Since the processing signal electrode portions of the respective semiconductor devices are provided on the outer edge portions of a pair of opposing sides on the substrate, the processing signal electrode portions provided on any of the above sides can be used. A semiconductor device can be inspected.

  In the probe probe connecting step, the probe probe for inspecting the semiconductor device is electrically connected to the processing signal electrode provided on the outermost side of the arranged semiconductor devices. The semiconductor device can be inspected without passing through the upper part of the light receiving means of the semiconductor device. In particular, when the semiconductor devices are arranged in two rows, the probe probe can be connected without passing through the upper part of the light receiving means provided in each semiconductor device.

  Therefore, there are provided a semiconductor device including a light receiving means capable of inspecting at once by arranging devices that need to be inspected by irradiating light, an inspection method for the semiconductor device, and a semiconductor device inspection apparatus. There is an effect that can be.

[Embodiment 1]
One embodiment of the present invention will be described below with reference to FIGS.

  FIG. 1 is a block diagram showing a configuration of the semiconductor device 110 according to the present embodiment.

  In the semiconductor device 110 of the present embodiment, the integrated circuit 111 is a semiconductor integrated circuit including the light receiving means 111a. For example, an image pickup device such as a CCD or a CMOS image sensor may be used. The integrated circuit 111 inspects the functions of the image processing unit 111b (light reception signal processing unit) for processing and outputting a signal input to the light receiving unit 111a in a state of normal use, and the integrated circuit 111. Inspection information processing means 111c (inspection means).

  The light receiving means 111a and the image information processing means 111b are electrically connected. The light receiving means 111a and the inspection information processing means 111c are electrically connected.

  Further, the semiconductor device 110 of the present embodiment includes image signal electrode pads 112 for inputting / outputting a signal input to or output from the image information processing unit 111b from the semiconductor device 110. The image information processing means 111b and these image signal electrode pads 112... Are electrically connected, and the image processing signal 121 is transmitted.

  The image signal electrode pads 112... May be arranged at arbitrary positions on the semiconductor device 110 according to the usage pattern of the semiconductor device 110.

  In addition, the semiconductor device 110 according to the present embodiment has an inspection electrode pad 113 (processing signal electrode portion) for inputting / outputting a signal input to or output from the inspection information processing unit 111c from the semiconductor device 110. It has. The inspection information processing unit 111c and these inspection electrode pads 113 are electrically connected to each other, and an inspection processing signal 122 is transmitted.

  In the present embodiment, the inspection electrode pads 113 are formed at positions along the left and right sides of the semiconductor device 110.

  In the semiconductor device 110 of the present embodiment, the inspection electrode pad 113 is provided only at a limited position as described above. Therefore, the inspection information processing unit 111c may include a function of converting a signal input / output to / from the light receiving unit 111a so as to be input / output via the inspection electrode pad 113.

These inspection electrode pads 113 ... are, 113L _1, 113L ₂ along one side of the semiconductor device 110 (L side edge in FIG. 1), ..., 113L _n are formed . In addition, 113R ₁ , 113R ₂ ,..., 113R _n are formed on the other side (R side in FIG. 1) of the semiconductor device 110. In this embodiment, 113L ₁ , 113L ₂ ,..., 113L _n and 113R ₁ , 113R ₂ ,..., 113R _n are formed to face the left and right sides of the semiconductor device 110. However, these terminals only need to be formed one by one on the L side and the R side, and need not necessarily face each other. In addition, 113L ₁ and 113R ₁ , 113L ₂ and 113R ₂ ,..., 113L _n and 113R _n can be electrically input / output respectively.

For example, as shown in FIG. 2, 113L ₁ and 113R ₁ , 113L ₂ and 113R ₂ ,..., 113L _n and 113R _n may be electrically connected.

  In the present embodiment, the image signal electrode pad 112 and the inspection electrode pad 113 are described as different electrode pads, but the image signal electrode pad 112 and the inspection electrode are described later. The pad 113 is formed as a common electrode pad, and a signal to be input / output from the integrated circuit 111 to the electrode pad is selected by a switch or the like to select an input / output signal that is normally used by the integrated circuit 111 or an input / output signal for inspection Also good.

  Next, the inspection apparatus 500 of the semiconductor device 110 according to the present embodiment will be described with reference to FIG.

  FIG. 3 is a block diagram showing a configuration of the inspection apparatus 500 of the present embodiment.

  The inspection apparatus 500 of this embodiment irradiates light to the probe card 510 for inspection for electrically connecting the probe 520 (probe probe) to the semiconductor device 110 and the integrated circuit 111 of the semiconductor device 110. And an optical system 540 for inspecting the semiconductor device 110 and a semiconductor device inspection means 550 which is a means for inspecting the semiconductor device 110.

  The probe card 510 is provided above the semiconductor device 110 and is a member for connecting the probe 520 to the semiconductor device 110 to be inspected. An opening 530 is formed in the probe card 510, and the probe 520 is connected to the plurality of semiconductor devices 110 provided under the opening 530. The probe 520 is a kind of electrode provided on the probe card 510 and is an electrode for electrically connecting the inspection electrode pad 113 of the semiconductor device 110 and the semiconductor device inspection means 550 provided on the inspection device 500. is there. Therefore, the probe 520 and the semiconductor device inspection means 550 are electrically connected.

  As described above, the probe 520 is connected to the inspection electrode pad 113 of the semiconductor device 110. Since the connection method between the probe 520 and the inspection electrode pad 113 is only required to be electrically connected, a method of pressing the probe 520 against the inspection electrode pad 113 and bringing it into contact is used. In addition, the two types of electrodes may be electrically connected by a known method.

  Further, the inspection apparatus 500 of the present embodiment is provided with an optical system 540 for performing an inspection by irradiating the integrated circuit 111 of the semiconductor device 110 with light. The optical system 540 may include a light source such as a light bulb or a laser, and an optical member for changing or converging the optical path of light emitted from the light source.

  The semiconductor device inspection unit 550 is a unit that performs various inspections on the semiconductor device 110. Since the semiconductor device inspection means 550 and the probe 520 are electrically connected, the semiconductor device 110 can be electrically inspected via the probe 520. In addition, the semiconductor device inspection unit 550 is also connected to the optical system 540, and an inspection performed by irradiating light to the light receiving unit 111a of the semiconductor device 110 can be performed.

  In the inspection for irradiating the semiconductor device 110 with light, for example, the sensitivity of the light receiving means 111a, the linearity of sensitivity to light, the saturation state, etc. are inspected. In this inspection, for example, the light receiving characteristic of the light receiving unit 111a is inspected by changing the intensity and wavelength of light irradiated from the optical system 540 to the light receiving unit 111a or changing the light irradiation intensity over time. .

  Next, an inspection method for the semiconductor device 110 according to the present embodiment will be described with reference to FIG.

  FIG. 4A is a plan view showing a state in which the inspection apparatus 500 inspects the semiconductor device 110 of the present embodiment. Moreover, (b) is an A-A ′ sectional view of the inspection apparatus 500 described in (a).

  FIG. 5 is a plan view showing a state in which the semiconductor device 110 according to the present embodiment is formed on the wafer 100.

  4A, the semiconductor device 110 according to the present embodiment is formed on the wafer 100 so that two semiconductor devices 110 in the horizontal direction and a plurality of the semiconductor devices 110 in the vertical direction (five in FIG. 4A) are arranged. 110 shows a state in which inspection is performed at the same time. 4A shows a probe card 510 for inspection of the inspection apparatus 500 that inspects the semiconductor device 110, and a probe 520 that is provided on the probe card 510 and inspects the semiconductor device 110. Has been. In the present embodiment, the semiconductor device 110 that is visible from the opening 530 of the probe card 510 is simultaneously inspected. Note that an optical system 540 that performs inspection by irradiating light to the integrated circuit 111 of the semiconductor device 110 is provided above the plane of the drawing (z direction shown in FIG. 4).

  As shown in FIG. 4B, the inspection apparatus 500 is provided with a probe card 510 above the semiconductor device 110 formed on the wafer 100 (z direction in FIG. 4B). The wafer 100 and the probe card 510 are provided so as to face each other. Further, the probe 520 formed on the probe card 510 is in contact with the inspection electrode pad 113 formed on the semiconductor device 110, and the inspection device 500 and the semiconductor device 110 are electrically connected. ing.

  Further, an optical system 540 for irradiating the integrated circuit 111 of the semiconductor device 110 with light for inspection is provided further above the probe card 510.

In the semiconductor device 110 of the present embodiment, the inspection electrode pads 113... Are formed along two opposing sides of the semiconductor device 110 as described above, and one side (the L side in FIG. 2). 113L ₁ , 113L ₂ ,..., 113L _n and 113R ₁ , 113R ₂ ,... 113R _n formed on the other side (R side in FIG. 2). ..., together are corresponding connecting inspection electrode pads electrically respectively to the 113R _n, it is electrically connected to the integrated circuit 111.

5, inspection electrode pads 113L ₁ , 113L ₂ ,..., 113L _n provided in the respective semiconductor devices 110 are arranged vertically on the L side of the wafer 100, and the inspection electrodes are arranged. The pads 113R ₁ , 113R ₂ ,..., 113R _n are provided so as to be arranged vertically on the R side of the wafer 100.

Therefore, as shown in FIG. 4A, 113L ₁ , 113L ₂ ,..., 113L _n among the inspection electrode pads 113 of each semiconductor device 110 in the left column of the two semiconductor devices 110 arranged side by side. And the probes 520... Are in contact with each other and the inspection device 500 and the semiconductor device 110 are not obstructed by the probes 520 without blocking the upper portions of all the semiconductor devices 110 arranged as shown in FIG. Can be electrically connected. Similarly, in the right column of the semiconductor device 110, 113R ₁ , 113R ₂ ,..., 113R _n and the probe 520. When connected, the inspection device 500 and the semiconductor device 110 can be electrically connected without the probe 520 blocking the upper portions of all the semiconductor devices 110 arranged as shown in FIG. That is, the probe 520 does not block between the light receiving means 111a provided in each semiconductor device 110 and the optical system 540.

  In the semiconductor device 110 of the present embodiment, the inspection of the semiconductor device 110 can be performed by electrically connecting the inspection information processing unit 111c provided in the semiconductor device 110 and the inspection device 500 as described above. The inspection method to be performed may be appropriately set depending on the configuration of the semiconductor device 110, and a well-known inspection method can be used.

  In other words, the semiconductor device 110 of this embodiment can be inspected by simultaneously irradiating light to the semiconductor devices 110 arranged in two rows and provided in a plane.

[Embodiment 2]
The following will describe another embodiment of the present invention with reference to FIG. Configurations other than those described in the present embodiment are the same as those in the first embodiment. For convenience of explanation, members having the same functions as those shown in the drawings of the first embodiment are given the same reference numerals, and explanation thereof is omitted.

  FIG. 6 is a block diagram showing a configuration of the semiconductor device 210 of the present embodiment.

  In the semiconductor device 210 of the present embodiment, as in the first embodiment, the integrated circuit 111 is a semiconductor integrated circuit including the light receiving means 111a. Further, similarly to the first embodiment, an image information processing unit 111b and an inspection information processing unit 111c are provided.

  The semiconductor device 210 of the present embodiment is further electrically connected to the image information processing unit 111b and the inspection information processing unit 111c, and is connected to the image information processing unit 111b in a state where the integrated circuit 111 is normally used. An input / output electrode pad 212 (processing signal electrode unit) is switched between an input or output signal and a signal input to or output from the inspection information processing unit 111c for inspection of the operation of the integrated circuit 111. An operation switching means 214 for transmission is provided.

  The input / output electrode pad 212 is provided with the image signal electrode pad 112 and the inspection electrode pad 113 which are separately provided in the first embodiment as a common input / output electrode pad. It is electrically connected to the means 214. With this configuration, the number of electrode pads provided on the substrate can be reduced, and the area of the substrate can be reduced.

  The operation switching means 214 is configured to switch the connection destination by a signal (control signal 223) electrically input from the outside via the switching signal electrode pad 215 (control signal electrode portion). Yes. For example, when there is no control signal 223, the image information processing unit 111b and the input / output electrode pad 212 are connected, and when the control signal 223 is input, the inspection information processing unit 111c and the input / output electrode pad 212 are connected. You may comprise so that it may connect.

  The control signal 223 may be set as appropriate when the semiconductor device 210 is configured. For example, the signal may be a signal in which a voltage having a certain height with respect to the ground potential of the semiconductor device 210 lasts for a certain time.

  In such a configuration, for example, as shown in FIG. 6, the signal line connected to the switching signal electrode pad 215 is electrically connected to the ground terminal 218 (ground electrode portion) of the semiconductor device 210 by the pull-down resistor 216 (ground electrode portion). To the ground potential of the semiconductor device 210. With this configuration, the potential of the switching signal electrode pad 215 can be set to the ground potential of the semiconductor device 210 when the semiconductor device 210 is normally used. Therefore, it is possible to prevent electrical noise from entering the switching signal electrode pad 215 and the like and the semiconductor device 210 to be in an operation state for inspection due to a malfunction.

The input / output electrode pads 212 are formed at positions along the left and right sides of the semiconductor device 210 as in the inspection electrode pads 113 described in the first embodiment. 212L ₁ along one side of the semiconductor device 210 (L side edge in FIG. _{6), 212L 2, ···,} 212L n are formed. In addition, 212R ₁ , 212R ₂ ,..., 212R _n are formed on the other side of the semiconductor device 210 (R side in FIG. 6). _{212L 1, 212L 2, ···,} 212L n and 212R _1, 212R _2, ···, and 212R _n, are formed so as to face the top of the left and right sides of the semiconductor device 210. Further, 212L ₁ and 212R ₁ , 212L ₂ and 212R ₂ ,..., 212L _n and 212R _n are electrically connected to each other.

  In addition, the semiconductor device 210 according to the present embodiment includes a switching signal electrode pad 215 for inputting a control signal 223 for controlling the operation of the connection destination of the operation switching unit 214 and the inspection information processing unit 111c. I have. The switching signal electrode pad 215 is formed at a position along the left and right sides of the semiconductor device 210, similarly to the input / output electrode pad 212. Further, a switching signal electrode pad 215L is formed on one side (L side in FIG. 6) of the semiconductor device 210, and a switching signal electrode pad is formed on the other side (R side in FIG. 5). 215R is formed. The switching signal electrode pad 215L and the switching signal electrode pad 215R are formed on the left and right sides of the semiconductor device 210 so as to face each other and are electrically connected to each other. The switching signal electrode pads 215... Are electrically connected to the operation switching means 214 and the inspection information processing means 111c.

The semiconductor device 210 of this embodiment is formed in two rows on the likewise U Fine 200 in the first embodiment shown in FIG.

Incidentally, as shown in FIG. 1 of the first embodiment, the electrode pads 212L ₁ · · · are formed so as to face the top of the left and right sides of the semiconductor device 210, 215L and the electrode pads 212R ₁ · · ·, 215R It is only necessary to be configured so that the same signal can be input and output electrically.

  Next, an inspection method for the semiconductor device 210 according to the present embodiment will be described.

  First, the semiconductor device 210 of the present embodiment is connected to the inspection apparatus 500 in the same manner as the semiconductor device 110 of the first embodiment.

That is, as in the first embodiment shown in FIG. 4A, in the left column of the two semiconductor devices 210 arranged horizontally, 212L ₁ and 212L ₂ of the input / output electrode pads 212 of each semiconductor device 210 are provided. ,..., 212L _n , and the switching signal electrode pad 215L and the probes 520. In the right column of the semiconductor device 210, among the input / output electrode pads 212 of each semiconductor device 210, 212R ₁ , 212R ₂ ,..., 212R _n , the switching signal electrode pad 215R and the probe 520.・ ・ Contact and connect.

  In the semiconductor device 210 of the present embodiment, the corresponding input / output electrode pads 212... And the switching signal electrode pads 215 formed on the left and right sides of the semiconductor device 210 are electrically connected. Therefore, when the semiconductor device 210 and the inspection device 500 are electrically connected as described above, similarly to the first embodiment, the upper portion of the semiconductor device 210 can be electrically connected without being blocked by the probe 520. . That is, the probe 520 does not block between the light receiving means 111a provided in each semiconductor device 210 and the optical system 540.

  Next, in order to inspect the semiconductor device 210 of the present embodiment, a signal (control signal 223) that is electrically input from the outside to inspect the function of the integrated circuit 111 to the switching signal electrode pad 215 is supplied. input.

  In each semiconductor device 210 connected to the inspection apparatus 500 as described above, either the switching signal electrode pad 215L or the switching signal electrode pad 215R is electrically connected to the inspection apparatus 500 via the probe 520. is doing. Therefore, the control signal 223 can be input to the switching signal electrode pad 215 of each semiconductor device 210 connected to the inspection apparatus 500.

  When the control signal 223 is input to the switching signal electrode pad 215, the control signal 223 is input to the operation switching means 214 and the inspection information processing means 111c.

  When the control signal 223 is input to the operation switching unit 214, the operation switching unit 214 switches the circuit so as to electrically connect the inspection information processing unit 111c and the input / output electrode pad 212.

  When the control signal 223 is input to the inspection information processing unit 111c, the inspection information processing unit 111c enters an operation state for inspection. In this state, the inspection information processing unit 111c processes a signal for inspecting the semiconductor device 210, and inspects the semiconductor device 210 with the inspection device 500 provided outside through the input / output electrode pad 212. Input and output signals for The inspection method to be performed may be appropriately set depending on the configuration of the semiconductor device 210, and a well-known inspection method can be used.

  That is, the semiconductor device 210 of the present embodiment is arranged in two rows by electrically inputting the control signal 223 to the operation switching unit 214 and the inspection information processing unit 111c via the switching signal electrode pad 215. Each semiconductor device 210 provided for inspection can be simultaneously irradiated with light for inspection.

[Embodiment 3]
The following will describe another embodiment of the present invention with reference to FIGS. Note that structures other than those described in the present embodiment are the same as those in the first embodiment or the second embodiment. For convenience of explanation, members having the same functions as those shown in the drawings of the first embodiment or the second embodiment are denoted by the same reference numerals, and the description thereof is omitted.

  FIG. 7 is a block diagram showing a configuration of the semiconductor device 310 of the present embodiment.

  In the semiconductor device 310 of the present embodiment, as in the first embodiment, the integrated circuit 111 is a semiconductor integrated circuit including the light receiving means 111a. Further, similarly to the first embodiment, an image information processing unit 111b and an inspection information processing unit 111c are provided.

  Similarly to the second embodiment, the semiconductor device 310 according to the present embodiment has an operation switching unit 214 and input / output electrode pads 212 formed at positions along the left and right sides of the semiconductor device 310.・ ・ And

  Further, the semiconductor device 310 of the present embodiment includes output selection means 317 for selecting whether or not to output the signal selected by the operation switching means 214 to the input / output electrode pads 212. ing.

  The output selection means 317 electrically connects the integrated circuit 111 provided in the semiconductor device 310 and the input / output electrode pads 212... By a signal (control signal 223) electrically input from the outside. Or a switching circuit for selecting whether or not to disconnect. A method for inputting the control signal 223 will be described later.

Similarly to the second embodiment, the control signal 223 is input from switching signal electrode pads 315 ₁ , 315 ₂ , and 315 ₃ formed at positions along the left and right sides of the semiconductor device 310. The control signal 223 is input as a combination of signals input from the switching signal electrode pads 315 ₁ , 315 ₂ , and 315 ₃ .

In the present embodiment, switching signal electrode pads 315L ₁ , 315L ₂ , and 315L ₃ are formed on _one side of the semiconductor device 310 (L side in FIG. 7), and the other side of the semiconductor device 310 (FIG. 7). Switching signal electrode pads 315R ₁ , 315R ₂ , and 315R ₃ are formed on the R side). The switching signal electrode pads 315L ₁ , 315L ₂ , and 315L ₃ and the switching signal electrode pads 315R ₁ , 315R ₂ , and 315R ₃ are formed on the left and right sides of the semiconductor device 310 so as to face each other. Connected. The switching signal electrode pads 315... Are electrically connected to the operation switching means 214, the inspection information processing means 111c, and the output selection means 317.

As shown in FIG. 1 of the first embodiment, the electrode pads 212L ₁ ... 315L ₁ ... And the electrode pads 212R _1. ..., 315R ₁ ... Only need to be configured so that the same signal can be input / output.

  The control signal 223 may be set as appropriate when the semiconductor device 310 is configured. For example, the control signal 223 is a signal (HIGH level) that maintains a constant voltage for a certain time with respect to the ground potential of the semiconductor device 310. Signal = 1) may be expressed as a combination of the ground potential of the semiconductor device 310 (LOW level signal = 0). Detailed operations of the operation switching unit 214, the inspection information processing unit 111c, and the output selection unit 317 according to a combination of signals input to the switching signal electrode pads 315, will be described later.

  FIG. 8 is a plan view showing a state in which the inspection apparatus 600 inspects the semiconductor device 310 of the present embodiment formed on the wafer 300. In the present embodiment, the semiconductor device 310 visible from the opening 630 of the inspection probe card 610 provided in the inspection apparatus 600 is inspected at the same time.

In the semiconductor device 310 of the present embodiment, eight semiconductor devices 310 in the horizontal direction and a plurality of semiconductor devices 310 in the vertical direction (five in FIG. 8) are formed on the wafer 300 side by side. The four rows of semiconductor devices 310 formed on the left side are adjacent input / output electrode pads 212L ₁ , 212L ₂ ,..., 212L _n and switching signal electrode pads 315L ₁ , 315L ₂ , 315L ₃ , The input / output electrode pads 212R ₁ , 212R ₂ ,..., 212R _n and the switching signal electrode pads 315R ₁ , 315R ₂ , 315R ₃ are electrically connected. These adjacent input / output electrode pads 212... And switching signal electrode pads 315... Are formed so that the respective patterns are connected when the semiconductor device 310 is formed on the wafer 300 by a known method. Alternatively, the connection may be made by a known method before performing the inspection process of the present embodiment.

Similarly, input / output electrode pads 212L ₁ ... And switching signal electrode pads 315L ₁ ..., Input / output electrode pads 212R ₁ . The electrode pads 315R ₁ ... Are electrically connected.

The probe card 610 is provided with input / output electrode pads 212L ₁ , 212L ₂ ,..., 212L _n and switching signal electrode pads 315L ₁ , 315L ₂ , 315L ₃ of the semiconductor device 310 formed in the leftmost column. Each of the semiconductor devices 310 formed in the left half and the inspection device 600 are electrically connected by contacting the probes 620... Extending from the left side of the opening 630 formed.

Similarly, the input / output electrode pads 212R ₁ , 212R ₂ ,..., 212R _n and the switching signal electrode pads 315R ₁ , 315R ₂ , 315R ₃ of the semiconductor device 310 formed in the rightmost column are the probe card 610. Each of the semiconductor devices 310 formed in the right half and the inspection device 600 are electrically connected to each other by contacting with the probes 620... Extending from the right side of the opening 630 provided in the.

  In the present embodiment, the columns of the semiconductor devices 310 formed in the eight columns on the left and right are referred to as the first column, the second column,.

  As described above, the semiconductor device 310 according to the present embodiment includes the integrated circuit 111 and the input / output electrode pads provided in each semiconductor device 310 by the combination of the control signals 223 input to the switching signal electrode pads 315. 212... Are provided for selecting whether or not to connect 212.

In the semiconductor device 310 of the present embodiment, for example, the operation switching means 214, the inspection information processing, and the like according to the combination of signals input to the switching signal electrode pads 315 ₁ , 315 ₂ , 315 ₃ (combination of 1 and 0). The operations of the means 111c and the output selection means 317 may be set as shown in Table 1 below.

  For example, when the semiconductor device 310 is formed on the wafer 300 by a well-known method, the output selection unit 317 shown in Table 1 operates for each column position where the semiconductor device 310 is formed by a well-known method. Recording may be performed, or recording may be performed by a known method before performing the inspection process of the present embodiment.

  Note that the inspection method to be performed may be appropriately set depending on the configuration of the semiconductor device 310, and a well-known inspection method can be used.

In the case of such a configuration, for example, as shown in FIG. 7, the signal line connected to the switching signal electrode pads 315 ₁ , 315 ₂ , 315 ₃ is connected to the semiconductor device 310 by pull-down resistors 316 ₁ , 316 ₂ , 316 ₃ . It may be electrically connected to the ground terminal 218 to be the ground potential of the semiconductor device 310. With this configuration, the potential of the switching signal electrode pads 315... Can be set to the ground potential of the semiconductor device 310 when the semiconductor device 310 is normally used. Therefore, it is possible to prevent electrical noise from entering the switching signal electrode pads 315... And the semiconductor device 310 from being in an operation state for inspection due to a malfunction.

  In this way, by setting the operations of the operation switching unit 214, the inspection information processing unit 111c, and the output selection unit 317, each semiconductor device 310 provided in a plane in a horizontal direction and arranged in a plane is simultaneously provided. Inspection can be performed by irradiating light. In particular, in the method of this embodiment, the semiconductor devices 310 for eight rows can be inspected simultaneously, so that the inspection can be performed at a higher speed than the methods of the first and second embodiments. it can. Further, since the number of semiconductor devices that can be inspected at the same time is increased, the number of times the probe card is brought into contact with the semiconductor device can be reduced. Therefore, the service life of the inspection device and the probe card can be extended.

  In the present embodiment, the case where the control signal 223 input to the output selection circuit provided in the semiconductor device has five patterns represented by 1 and 0 is described. As described in (a), it may be a signal such that a voltage having a constant height with respect to the ground potential of the semiconductor device lasts for a certain period of time. The waveform may appear as a pattern having a certain voltage, or the semiconductor device 310 that is electrically connected to the inspection apparatus 600 may be specified by these patterns. A well-known pattern can be used for the control signal 223.

  Further, the number of signal lines for inputting the control signal 223 to the output selection circuit is not limited to three as in this embodiment, and is electrically connected to the inspection apparatus 600 by the control signal 223. Any number of signal lines that can identify the semiconductor device 310 may be used. For example, a single electric wire or a plurality of electric wires may be used. By controlling these switching operations, the number of columns of semiconductor devices that can be inspected at the same time is not limited to eight, but the number of columns that can be distinguished by the output selection circuit is simultaneously inspected. Can do.

  Furthermore, in the above embodiment, the semiconductor devices are arranged in two or eight rows in the horizontal direction. However, the direction of the arrangement can be changed as appropriate, and the arranged semiconductor devices are arranged in a plurality of rows in an arbitrary direction. Inspections that need to be performed by irradiating light onto the planar semiconductor device group can be performed simultaneously.

  The present invention is not limited to the configurations described above, and various modifications can be made within the scope of the claims, and the technical means disclosed in different embodiments are appropriately combined. The obtained embodiment is also included in the technical scope of the present invention.

  As described above, in the present invention, the inspection information processing means is provided with electrodes electrically connected to each other at positions along the left and right sides of the semiconductor device, and the electrodes inspect the function of the semiconductor device. Therefore, the functions of the semiconductor device can be tested at a time while irradiating light. Therefore, by using the present invention, it is possible not only to inspect a plurality of product inspections of various image pickup devices typified by a CCD and a CMOS image sensor at the same time, but also to apply to the field of reading data of these various image pickup devices. Is possible.

It is a block diagram which shows one Embodiment of the semiconductor device in this invention. It is a block diagram which shows another one Embodiment of the semiconductor device in this invention. It is a block diagram which shows one Embodiment of the test | inspection apparatus in this invention. (A) is a top view which shows one Embodiment of the test | inspection apparatus in this invention, and is a top view which shows a mode that the semiconductor device of FIG. 1 or FIG. 2 is test | inspected. (B) is sectional drawing which shows one Embodiment of the test | inspection apparatus in this invention, and is A-A 'sectional drawing of (a). FIG. 3 is a plan view showing an embodiment of a semiconductor device according to the present invention, and is a plan view showing a state in which the semiconductor device of FIG. 1 or 2 is formed on a wafer. FIG. 5 is a block diagram showing another embodiment of the semiconductor device according to the present invention, and the semiconductor device of FIG. 2 further includes an operation switching means. FIG. 6 is a block diagram showing another embodiment of the semiconductor device according to the present invention, and the semiconductor device of FIG. 5 further includes an output selection unit. It is a top view which shows another one Embodiment of the test | inspection apparatus in this invention, and is a top view which shows a mode that the semiconductor device of FIG. 6 is test | inspected. 7 is a graph showing another embodiment of the semiconductor device according to the present invention, and is a graph showing an example of the shape of a control signal input to the switching signal electrode pad of the semiconductor device of FIG. 6. It is a top view which shows the method of the test | inspection of the conventional test | inspection apparatus. It is a top view which shows the conventional semiconductor device. It is a top view which shows the conventional semiconductor device. It is a top view which shows the inspection method of the conventional semiconductor device. It is a top view which shows the inspection method of the conventional semiconductor device.

Explanation of symbols

100, 200, 300 Wafer 110, 210, 310 Semiconductor device 111 Integrated circuit 111a Light receiving means 111b Image information processing means (light receiving signal processing means)
111c Inspection information processing means (inspection means)
112 Image Signal Electrode Pad 113 Inspection Electrode Pad (Processing Signal Electrode Section)
121 Image processing signal 122 Inspection processing signal 212 Input / output electrode pad (processing signal electrode section)
214 Operation switching means 215, 315 Switching signal electrode pad (control signal electrode section)
216,316 Pull-down resistor (resistance means)
218 Ground terminal (ground electrode)
223 Control signal 317 Output selection means 500,600 Inspection device 510,610 Probe card 520,620 Probe (probe probe)
530, 630 opening 540 optical system

Claims (11)

Light receiving means on the surface of the substrate, inspection means electrically connected to the light receiving means and inspecting the operation of the light receiving means, and processing signals electrically connected to the inspection means and output from the inspection means A plurality of processing signal electrode portions for transmitting from the substrate to the outside, a light receiving signal processing means for processing a light receiving signal electrically connected to the light receiving means and output from the light receiving means, and an electric power for the light receiving signal processing means And an image signal electrode pad for transmitting the image signal output from the received light signal processing means to the outside from the substrate ,
One set of the processing signal electrode portions is provided along each of a pair of opposing sides of the substrate on the outer edge portion of the substrate, and one set of processing signal electrode portions is provided along one side. Each outputs a processing signal identical to each of a set of processing signal electrode portions provided along the other side . A light receiving means on the surface of the substrate, an inspection means electrically connected to the light receiving means and inspecting the operation of the light receiving means, and a light reception signal electrically connected to the light receiving means and output from the light receiving means A received light signal processing means, a processing signal output from the inspection means, or a plurality of processed signal electrode portions for transmitting an image signal output from the received light signal processing means from the substrate to the outside, and the substrate A control signal electrode portion provided in a pair along each of a pair of opposing sides of the substrate on the outer edge portion of the substrate, and a control electrically connected to the control signal electrode portion and input to the control signal electrode portion An operation switching means for selecting a connection destination of the processing signal electrode portion from the inspection means and the received light signal processing means by a signal;
  One set of the processing signal electrode portions is provided along each of a pair of opposing sides of the substrate on the outer edge portion of the substrate, and one set of processing signal electrode portions is provided along one side. Each outputs a processing signal identical to each of a set of processing signal electrode portions provided along the other side. Furthermore, it comprises output selection means electrically connected between the operation switching means and the processing signal electrode unit,
3. The semiconductor device according to claim 2 , wherein the output selection unit disconnects the connection between the operation switching unit and the processing signal electrode unit according to a control signal input to the control signal electrode unit. 4. The semiconductor device according to claim 2 , wherein the control signal electrode portion is electrically connected to a resistance means, and the resistance means is connected to a ground electrode portion of the semiconductor device. A semiconductor device inspection apparatus for a plurality simultaneously inspecting a semiconductor device according to any one of claims 1-4,
The processing signal electrode portions of the plurality of semiconductor devices are arranged so as to form columns, and the semiconductor devices are arranged in a plane,
The semiconductor device inspection apparatus is
A probe probe for electrically connecting the semiconductor device; and an optical system for irradiating light to the light receiving means included in the semiconductor device;
The probe tip is brought into contact with the processing signal electrode provided on the outermost side of the semiconductor devices arranged;
A semiconductor device inspection apparatus, wherein the light receiving means is irradiated with light from the optical system to inspect the semiconductor device. 6. The semiconductor device inspection apparatus according to claim 5 , wherein the semiconductor devices are arranged in two rows.   A semiconductor device inspection apparatus for simultaneously inspecting a plurality of semiconductor devices according to claim 3,
  The processing signal electrode portions of the plurality of semiconductor devices are arranged so as to form columns, and the semiconductor devices are arranged in a plane,
  The semiconductor device inspection apparatus is
A probe probe for electrically connecting the semiconductor device; and an optical system for irradiating light to the light receiving means included in the semiconductor device;
  The probe tip is brought into contact with the processing signal electrode provided on the outermost side of the semiconductor devices arranged;
  Inspecting the semiconductor device by irradiating light from the optical system to the light receiving means,
  The probe probe is brought into contact with the control signal electrode portion provided on the outermost side of the semiconductor devices arranged side by side,
  A semiconductor device inspection apparatus, wherein a control signal is input to the control signal electrode section to control the output selection means. Each of the semiconductor devices is arranged in eight rows, and each of the set of adjacent processing signal electrode portions and the control signal electrode portions between the semiconductor devices arranged between the four rows from the outside of the rows, respectively. The semiconductor device inspection apparatus according to claim 7 , wherein the semiconductor device inspection apparatuses are electrically connected to each other. An inspection method for inspecting a plurality of semiconductor devices according to any one of claims 1 to 4 ,
A semiconductor device arrangement step in which the processing signal electrode portions of the plurality of semiconductor devices are arranged so as to form columns, and the semiconductor device is arranged in a plane;
A probe probe connecting step for electrically connecting a probe probe for inspecting the semiconductor device to the processing signal electrode portion provided on the outermost side of the semiconductor devices arranged side by side;
And a light irradiation step of irradiating the light receiving means with light.   An inspection method for simultaneously inspecting a plurality of semiconductor devices according to claim 3,
  A semiconductor device arrangement step in which the processing signal electrode portions of the plurality of semiconductor devices are arranged so as to form columns, and the semiconductor device is arranged in a plane;
  A probe probe connecting step for electrically connecting a probe probe for inspecting the semiconductor device to the processing signal electrode portion provided on the outermost side of the semiconductor devices arranged side by side;
  A light irradiation step of irradiating the light receiving means with light,
  In the probe probe connecting step, a probe probe for inspecting the semiconductor device is further electrically connected to a control signal electrode portion provided on the outermost side of the semiconductor devices arranged side by side,
  The semiconductor device control step according to claim 9, further comprising a semiconductor device control step of controlling the output selection means by inputting a control signal to the control signal electrode portion subsequent to the probe probe connecting step. Inspection method. In the semiconductor device arrangement step, the processing signal electrode unit and the control signal electrode unit adjacent to each other between the semiconductor devices arranged between the four rows from the outside of the row and the rows of the semiconductor devices are arranged in 8 rows. The method for inspecting a semiconductor device according to claim 9 , wherein the semiconductor devices are electrically connected to each other.

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