JP4283432B2 - 試料作製装置 - Google Patents

試料作製装置 Download PDF

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Publication number
JP4283432B2
JP4283432B2 JP2000342372A JP2000342372A JP4283432B2 JP 4283432 B2 JP4283432 B2 JP 4283432B2 JP 2000342372 A JP2000342372 A JP 2000342372A JP 2000342372 A JP2000342372 A JP 2000342372A JP 4283432 B2 JP4283432 B2 JP 4283432B2
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JP
Japan
Prior art keywords
sample
ion beam
groove
stage
optical system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2000342372A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002148159A5 (enExample
JP2002148159A (ja
Inventor
広康 志知
亨 石谷
英巳 小池
馨 梅村
英一 瀬谷
光雄 徳田
聡 富松
秀夫 鹿島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2000342372A priority Critical patent/JP4283432B2/ja
Priority to DE60144508T priority patent/DE60144508D1/de
Priority to EP01125889.4A priority patent/EP1209737B2/en
Priority to US09/985,537 priority patent/US6664552B2/en
Publication of JP2002148159A publication Critical patent/JP2002148159A/ja
Priority to US10/699,853 priority patent/US6794663B2/en
Priority to US10/898,592 priority patent/US7268356B2/en
Priority to US11/822,386 priority patent/US7897936B2/en
Publication of JP2002148159A5 publication Critical patent/JP2002148159A5/ja
Application granted granted Critical
Publication of JP4283432B2 publication Critical patent/JP4283432B2/ja
Priority to US12/929,396 priority patent/US8796651B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers

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  • Sampling And Sample Adjustment (AREA)
JP2000342372A 2000-11-06 2000-11-06 試料作製装置 Expired - Lifetime JP4283432B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2000342372A JP4283432B2 (ja) 2000-11-06 2000-11-06 試料作製装置
DE60144508T DE60144508D1 (de) 2000-11-06 2001-10-30 Verfahren zur Herstellung von Proben
EP01125889.4A EP1209737B2 (en) 2000-11-06 2001-10-30 Method for specimen fabrication
US09/985,537 US6664552B2 (en) 2000-11-06 2001-11-05 Method and apparatus for specimen fabrication
US10/699,853 US6794663B2 (en) 2000-11-06 2003-11-04 Method and apparatus for specimen fabrication
US10/898,592 US7268356B2 (en) 2000-11-06 2004-07-26 Method and apparatus for specimen fabrication
US11/822,386 US7897936B2 (en) 2000-11-06 2007-07-05 Method and apparatus for specimen fabrication
US12/929,396 US8796651B2 (en) 2000-11-06 2011-01-20 Method and apparatus for specimen fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000342372A JP4283432B2 (ja) 2000-11-06 2000-11-06 試料作製装置

Related Child Applications (6)

Application Number Title Priority Date Filing Date
JP2008122126A Division JP2008203271A (ja) 2008-05-08 2008-05-08 試料作製方法および試料作製装置
JP2008205228A Division JP2008261892A (ja) 2008-08-08 2008-08-08 試料作製方法
JP2008205170A Division JP2008277312A (ja) 2008-08-08 2008-08-08 試料作製装置
JP2008205173A Division JP4283876B2 (ja) 2008-08-08 2008-08-08 試料作製方法
JP2008223457A Division JP4834705B2 (ja) 2008-09-01 2008-09-01 試料作製装置
JP2008223448A Division JP4834704B2 (ja) 2008-09-01 2008-09-01 試料作製方法

Publications (3)

Publication Number Publication Date
JP2002148159A JP2002148159A (ja) 2002-05-22
JP2002148159A5 JP2002148159A5 (enExample) 2008-09-25
JP4283432B2 true JP4283432B2 (ja) 2009-06-24

Family

ID=18816942

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000342372A Expired - Lifetime JP4283432B2 (ja) 2000-11-06 2000-11-06 試料作製装置

Country Status (1)

Country Link
JP (1) JP4283432B2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4205992B2 (ja) 2003-06-19 2009-01-07 株式会社日立ハイテクノロジーズ イオンビームによる試料加工方法、イオンビーム加工装置、イオンビーム加工システム、及びそれを用いた電子部品の製造方法
US7297965B2 (en) * 2004-07-14 2007-11-20 Applied Materials, Israel, Ltd. Method and apparatus for sample formation and microanalysis in a vacuum chamber
JP5033314B2 (ja) 2004-09-29 2012-09-26 株式会社日立ハイテクノロジーズ イオンビーム加工装置及び加工方法
JPWO2006064548A1 (ja) * 2004-12-14 2008-08-07 株式会社日立ハイテクノロジーズ 荷電粒子線装置およびそれを用いた試料作製方法
JP2008014631A (ja) * 2005-07-14 2008-01-24 Applied Materials Israel Ltd 真空チャンバーにおけるサンプル形成及びマイクロ分析のための方法及び装置
JP4634288B2 (ja) * 2005-11-22 2011-02-16 株式会社日立ハイテクノロジーズ 集束イオンビーム加工方法及び荷電粒子ビーム装置
JP2007248091A (ja) * 2006-03-14 2007-09-27 Jeol Ltd 試料作製装置及び試料作成方法
JP4785193B2 (ja) * 2006-08-03 2011-10-05 国立大学法人東京工業大学 集束イオンビームを用いる微細部位解析装置
JP5959139B2 (ja) 2006-10-20 2016-08-02 エフ・イ−・アイ・カンパニー Ｓ／ｔｅｍのサンプルを分析する方法
EP2095134B1 (en) 2006-10-20 2017-02-22 FEI Company Method and apparatus for sample extraction and handling
JP5117764B2 (ja) * 2007-05-22 2013-01-16 株式会社日立ハイテクノロジーズ 荷電粒子ビーム加工装置
JP5175008B2 (ja) * 2009-02-20 2013-04-03 株式会社日立ハイテクサイエンス ミクロ断面加工方法
JP5489295B2 (ja) 2010-12-06 2014-05-14 株式会社日立ハイテクノロジーズ 荷電粒子線装置及び荷電粒子線照射方法
US9733164B2 (en) * 2012-06-11 2017-08-15 Fei Company Lamella creation method and device using fixed-angle beam and rotating sample stage
DE102012020478A1 (de) * 2012-10-18 2014-05-08 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem und Verfahren zum Bearbeiten einer TEM-Probe
US9821486B2 (en) * 2013-10-30 2017-11-21 Fei Company Integrated lamellae extraction station
KR102841149B1 (ko) * 2018-12-17 2025-07-30 어플라이드 머티어리얼스, 인코포레이티드 광학 디바이스 제작을 위한 이온 빔 소스
JP7204200B2 (ja) * 2019-02-14 2023-01-16 株式会社日立ハイテクサイエンス 薄膜試料片作成方法および荷電粒子ビーム装置
CN113075213B (zh) * 2021-04-12 2023-06-13 成都理工大学 一种碳酸盐次生孔隙成分探测保护装置
JPWO2024134744A1 (enExample) * 2022-12-20 2024-06-27

Also Published As

Publication number Publication date
JP2002148159A (ja) 2002-05-22

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