JP4282204B2 - 熱処理方法 - Google Patents

熱処理方法 Download PDF

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Publication number
JP4282204B2
JP4282204B2 JP2000087544A JP2000087544A JP4282204B2 JP 4282204 B2 JP4282204 B2 JP 4282204B2 JP 2000087544 A JP2000087544 A JP 2000087544A JP 2000087544 A JP2000087544 A JP 2000087544A JP 4282204 B2 JP4282204 B2 JP 4282204B2
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Japan
Prior art keywords
temperature
substrate
radiation thermometer
processed
emissivity
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Expired - Fee Related
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JP2000087544A
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English (en)
Japanese (ja)
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JP2001274109A5 (https=
JP2001274109A (ja
Inventor
秀昭 桜井
信一 伊藤
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Toshiba Corp
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Toshiba Corp
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Priority to JP2000087544A priority Critical patent/JP4282204B2/ja
Publication of JP2001274109A publication Critical patent/JP2001274109A/ja
Publication of JP2001274109A5 publication Critical patent/JP2001274109A5/ja
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Publication of JP4282204B2 publication Critical patent/JP4282204B2/ja
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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Radiation Pyrometers (AREA)
JP2000087544A 2000-03-27 2000-03-27 熱処理方法 Expired - Fee Related JP4282204B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000087544A JP4282204B2 (ja) 2000-03-27 2000-03-27 熱処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000087544A JP4282204B2 (ja) 2000-03-27 2000-03-27 熱処理方法

Publications (3)

Publication Number Publication Date
JP2001274109A JP2001274109A (ja) 2001-10-05
JP2001274109A5 JP2001274109A5 (https=) 2005-06-23
JP4282204B2 true JP4282204B2 (ja) 2009-06-17

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JP2000087544A Expired - Fee Related JP4282204B2 (ja) 2000-03-27 2000-03-27 熱処理方法

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JP (1) JP4282204B2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7025280B2 (en) 2004-01-30 2006-04-11 Tokyo Electron Limited Adaptive real time control of a reticle/mask system
JP4786925B2 (ja) 2005-04-04 2011-10-05 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP4864396B2 (ja) 2005-09-13 2012-02-01 株式会社東芝 半導体素子の製造方法、及び、半導体素子の製造装置
JP2007095889A (ja) * 2005-09-28 2007-04-12 Ushio Inc 光照射式加熱方法
JP2010025756A (ja) * 2008-07-18 2010-02-04 Fuji Electric Systems Co Ltd 温度計測装置及び温度分布計測システム
JP5970910B2 (ja) * 2011-09-28 2016-08-17 凸版印刷株式会社 反射型マスクの製造方法
US10903097B2 (en) * 2018-03-30 2021-01-26 Axcelis Technologies, Inc. In-situ wafer temperature measurement and control
JP7685343B2 (ja) 2021-02-26 2025-05-29 株式会社Screenホールディングス 温度測定方法

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JP2001274109A (ja) 2001-10-05

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