JP4281050B2 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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JP4281050B2
JP4281050B2 JP2003093574A JP2003093574A JP4281050B2 JP 4281050 B2 JP4281050 B2 JP 4281050B2 JP 2003093574 A JP2003093574 A JP 2003093574A JP 2003093574 A JP2003093574 A JP 2003093574A JP 4281050 B2 JP4281050 B2 JP 4281050B2
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solder
semiconductor element
heat
heat radiating
conductor
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JP2004303869A (en
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典久 今泉
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Denso Corp
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Denso Corp
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Description

【０００１】
【発明の属する技術分野】
本発明は、半導体素子の両面に放熱板を装着した半導体装置に関する。
【０００２】
【従来の技術】
近年、高耐圧、大電流に適した半導体チップ（半導体素子）が内蔵されたインバータパワーモジュールが、機器の小型化が図れるため多く使われている。この半導体素子として、例えば、ＩＧＢＴ（絶縁ゲート型バイポーラトランジスタ）等がある。これら半導体素子は、使用時の発熱を効率よく放熱することが要求される。
【０００３】
【特許文献１】
特開２００２−３２９８２８号公報
【０００４】
【発明が解決しようとする課題】
従来技術として、特許文献１には、発熱素子の両面に放熱板を設けた提案がされている。この種の両面に放熱機能を持たせるパワーモジュールにおいては、これを冷却する冷却器への取り付けを考慮すると、両方の放熱板の平行度および間隔を一定にする必要がある。しかしながら、従来技術では、発熱素子や発熱素子と放熱板との間に配置される電極ブロックのはんだ付けのときに発生した傾きや材料の厚みのバラツキの影響により、両方の放熱板のうち電極ブロックと接合する放熱板のはんだ付け部において、はんだ量が過多となることがある。はんだ量が過多になると、余分なはんだが垂れて、発熱素子のガードリング部や信号線用のワイヤボンド部で絶縁不良を発生したり、はんだフィレット形状の異常により信頼性が低下したりする問題がある。
【０００５】
本発明は、上記した点を背景になされたものであり、はんだの過多さらに垂れを抑制し信頼性の高い半導体装置およびその製造方法を提供することを課題とする。
【０００６】
【課題を解決するための手段及び発明の効果】
上記課題を解決するために本発明半導体装置は、半導体素子と、この半導体素子の発熱を放熱するために半導体素子の一側面側に設けられる第１の放熱部と、この第１の放熱部と略平行に前記半導体素子の他側面側に設けられる第２の放熱部とを備えた半導体装置であって、
第１および第２の放熱部はそれぞれ半導体素子に面した側との反対側を放熱面とし、第１および第２の放熱部の少なくとも１つに、その放熱部と半導体素子とを接合するためのはんだ注入孔が放熱部を貫通して形成されており、そのはんだ注入孔は放熱面側が広く放熱面側とは反対側が小径をなして形成され、放熱部のはんだ注入孔の放熱面側から供給されるはんだにより、放熱面側とは反対側に前記半導体素子との接合のためのはんだ層が形成されることを特徴とする。
【０００７】
上記構成により、はんだの供給は、はんだ自身の毛細管現象によりはんだが狭いところに入り込み易い性質を利用し、接合部の狭い間隔の部分にはんだが適量供給され、はんだ過多をなくす（防止ないし抑制する）ことができ、はんだの垂れによる問題を解決できる。
【０００８】
また、本発明は、第２の放熱部の半導体素子に面する側に突出して導体部が一体形成され、この導体部は半導体素子の外周囲より小さい形状とし、この導体部と第２の放熱部とを貫通して接合用のはんだ注入孔が形成され、この注入孔の放熱面側から供給されるはんだにより半導体素子と導体部との接合のためのはんだ層が形成されることを特徴とする。
【０００９】
上記構成により、第２の放熱部と導体部が一体形成された場合において、注入孔を通って半導体素子と導体部との間の部分に適量のはんだが供給され、はんだ過多をなくすことができ、装置の信頼性を向上できる。
【００１０】
さらに、本発明は、半導体素子と、この半導体素子の発熱を放熱するために半導体素子の一側面側に設けられる第１の放熱板と、半導体素子の他側面側に設けられる導体部と、この導体部の前記半導体素子と面した側と反対側に、第１の放熱板と略平行に設けられる第２の放熱板とを備えた半導体装置であって、
第１の放熱板は半導体素子に面した側との反対側を放熱面とし、かつ第２の放熱板は導体部と面した側との反対側を放熱面とし、第１および第２の放熱板の少なくとも１つに、その放熱板と半導体素子および／または放熱板と導体部と半導体素子とを接合するためのはんだ注入孔が放熱板を貫通して形成されており、そのはんだ注入孔は放熱面側が広く放熱面側とは反対側が小径をなして形成され、放熱板のはんだ注入孔の放熱面側から供給されるはんだにより、放熱面側とは反対側に半導体素子との接合のためのはんだ層および／または導体部との接合のためのはんだ層が形成されることを特徴とする。
【００１１】
上記構成により、導体部と第２の放熱板が別体に設けられた場合において、注入孔から供給されたはんだが、その接合部の狭い間隔の部分に適量分だけ供給され、はんだ過多をなくすことができ、はんだの垂れを可及的に防止した接合ができる。
【００１２】
また、本発明は、半導体素子と、この半導体素子の発熱を放熱するために半導体素子の一側面側に設けられる第１の放熱板と、半導体素子の他側面側に設けられる導体部と、この導体部の半導体素子と面した側と反対側に、第１の放熱板と略平行に設けられる第２の放熱板とを備えた半導体装置であって、
第２の放熱板の導体部に面した側に、導体部の外周囲に対応してはんだ逃がし溝が形成され、このはんだ逃がし溝には余剰なはんだが収容されることを特徴とする。
【００１３】
上記構成により、第２の放熱板と導体部の間に所定の厚さのはんだ箔を供給して、はんだ付けを行う場合に、上記はんだ逃げ用溝が設けられていることにより、はんだ量のバラツキではみ出した分は溝に逃がすことができ、はんだ量のバラツキを吸収して、はんだの垂れを可及的になくすことができる。
【００１４】
さらに、具体的には、この導体部の外周囲に対応して形成したはんだ逃がし溝は、導体部の外縁がはんだ逃がし溝の幅の中間に位置するように設けており、また、この導体部が四角形状の導体ブロックにて形成されるときにおけるはんだ逃がし溝は、導体ブロックの全ての辺に対応して形成されており、導体部と第２の放熱板との間にはんだが適量供給される効果に加え、はんだ過多が生じてもはんだ逃がし溝に吸収され、はんだの垂れをさらに可及的になくすことができる。
【００１９】
【発明の実施の形態】
以下本発明の実施の形態につき図面に示す実施例を参照して説明する。図１は、本発明に係る半導体装置の一例を示す縦断面図である。半導体装置１は、例えば矩形状または方形状（以下矩形状と代表させる）の半導体素子（例えば、ＩＧＢＴ（絶縁ゲートバイポーラ型トランジスタ）素子）２と、この半導体素子２の一側面に、はんだ層３で接合された第１の放熱部としてのＣ面放熱板電極（ＩＧＢＴのコレクタ面）４と、半導体素子２の他側面に、半導体素子２より小さい矩形状をなし、はんだ層５で接合された導体部としての導体ブロック６と、導体ブロック６の半導体素子２の接合面の反対面に、はんだ層７で接合された第２の放熱部としてのＥ面放熱板電極（ＩＧＢＴのエミッタ面）８とを含み構成される。
【００２０】
Ｃ面放熱板電極４、Ｅ面放熱板電極８および導体ブロック６は、銅、アルミニウム等の熱伝導性のよい材料で形成されている。Ｃ面放熱板電極４およびＥ面放熱板電極８は、矩形板状に形成され（矩形状に限らず、方形、台形その他適宜の形状でもよいが）、それぞれ外部と電気的に接続されるリード４ａ、８ａを有している。
【００２１】
半導体素子２の電極（図示せず）は、外部の信号用電極９と、金あるいはアルミニウム等のボンディングワイヤ１０で接続されている。導体ブロック６は、半導体素子２とＥ面放熱板電極８との間の間隔を保持するスペーサの働きをして、ボンディングワイヤ１０の部分の形態が保持される。
【００２２】
Ｅ面放熱板電極８には、はんだ注入用の貫通したはんだ注入孔１１が設けられている。はんだ注入孔１１は、上部がひろく内部の径が小さい形状としている。このように本実施例では、はんだの供給は、はんだ自身の毛細管現象を利用し行うものである。その毛細管現象の利用のために半導体装置の製造にあたっては、Ｅ面放熱板電極８と導体ブロック６との望ましい間隔を設定し、これを治具等で保持する必要がある。それら両者の間隔は、例えば約１００μｍ〜２００μｍが好ましい。また、はんだ注入孔１１の径（小径孔部１１ｂ）は、はんだがスムーズに供給されるように考慮して設定する。孔径は、あまり小さいと、はんだの表面張力が大きすぎて注入困難となり、逆にあまり大きいと放熱性が劣化してよくないので、はんだ注入孔１１の孔径は１ｍｍ以上が好ましい。また、はんだ注入孔１１の注入口に相当する大径孔部１１ａについては、外形は円形状、矩形その他適宜の形状でよく、はんだの注入作業性を考慮して決定すればよい。注入口にあたる大径孔部１１ａも例えば円形状とすればその孔径は例えば２ｍｍ以上、また、大径孔部１１ａと小径孔部１１ｂとの孔径の比は、１．５：１〜７：１程度とすることが上述の注入口の機能および絞りの機能を生じさせるうえで好適といえる。
【００２３】
半導体装置１は、半導体素子２とＣ面放熱板電極４および導体ブロック６との接合、信号用電極９との結線、Ｅ面放熱板電極８との接合がされ、その後、熱硬化性樹脂等のモールド樹脂１２、例えばエポキシ樹脂でモールドすることにより封止される。
【００２４】
次に、図２に示す半導体装置１の製造方法について説明する。工程Ｓ１において、Ｃ面放熱板電極４の上にはんだ箔（３）を介して半導体素子２を載せ、また半導体素子２の上にはんだ箔（５）を介して導体ブロック６を載せる。加熱装置によって所定の温度ではんだ箔を溶融させ、その後硬化させ、半導体素子２とＣ面放熱板電極４および導体ブロック６とのはんだ付けを行う。つまり、はんだ層３で半導体素子２とＣ面放熱板電極４とが接合され、はんだ層５で半導体素子２と導体ブロック６とが接合される。
【００２５】
次に、工程Ｓ２において、信号用電極９と半導体素子２の電極とがワイヤボンディングにより結線される。
【００２６】
工程Ｓ３において、導体ブロック６の上にＥ面放熱板電極８を治具にて所定間隔を保持して、Ｃ面放熱板電極４と平行に配置し、還元雰囲気においてはんだ注入孔１１のＥ面放熱板電極８の放熱面側からはんだが供給される。あわせて加熱装置により加熱される。はんだ付けの温度は、はんだ溶融温度に対して例えば３０〜７０°Ｃ程度高い温度で行う。はんだ付け温度は、使用するはんだの組成・種類により異なり、概略は上記の通りでよいが、特に限定されるものではない。はんだの供給は、はんだ自身の毛細管現象によるため、狭いところに入り込み易く、間隔が広い部分には供給されにくい。したがって、はんだが所望箇所以外にははみ出ないまたははみ出しにくい。還元雰囲気にて酸化還元反応をしながらはんだ付けが行われる。その後、硬化され、導体ブロック６とＥ面放熱板電極８とがはんだ層７で接合される。このように、はんだがはんだ注入孔１１より供給され、はんだ自身の毛細管現象により、Ｅ面放熱板電極８と導体ブロック６との狭い間隔の部分に適量供給され、はんだ過多を可及的になくすことができ、はんだの垂れのないまたは少ない接合が可能となって、半導体装置の信頼性が向上する。
【００２７】
なお、Ｅ面放熱板電極８の上面におけるはんだ注入孔１１の部分（大径孔部１１ａ：注入口に相当）において、はんだがはみだした場合は、放熱部の平坦性を確保するために、盛り上ったはんだ部分は平坦に除去することが望ましい。
【００２８】
この後、工程Ｓ４において、半導体装置１をモールド金型（図示せず）にセットし、熱硬化性樹脂（例えばエポキシ樹脂）を注入し硬化する。半導体装置１は樹脂１２で封止され、外部からの機械的および環境ストレスから半導体素子２が保護される。このとき、Ｃ面放熱板電極４の下面とＥ面放熱板電極８の上面は樹脂が回り込まないようにして露出面とする。半導体素子２の使用時の熱を効率よく放熱するためである。
【００２９】
次に、図１０は本発明の他の実施例を示す。矩形状の導体ブロック６’の下面（半導体素子２に面する側）の角部を環状に連続して面取りして面取部１５を形成している。これにより、はんだ付けの工程において、半導体素子２と導体ブロック６’との間のはんだ層５’’のフィレット形状を適切な形状にすることが可能となる。
【００３０】
なお、Ｅ面放熱板電極８と導体ブロック６とは一体に形成してもよい。図３にその実施例を示している。Ｅ面放熱板電極８の下面に導体部１３がプレス加工等で一体形成され、Ｅ面放熱板電極８と導体部１３とを貫通してはんだ注入孔１１’が形成されている。このはんだ注入孔１１’の上部は、大径孔部１１’ａ（孔開口部の座ぐりとも言え、はんだ注入口に相当する）とされ、それに続いて小径孔部１１’ｂが形成され、その下端が導体部１３の下面に開口している。大径孔部１１’ａおよび小径孔部１１’ｂの機能等については先の実施例と同様である。この注入孔１１’の大径孔部１１’ａからはんだが供給され、そのはんだが小径孔部１１’ｂを通って下方へ導かれることにより、導体部１３と半導体素子２とが接合される。前述と同様にはんだの毛細管現象に基づき、適量のはんだが供給され、はんだ過多を可及的になくすことができる。
【００３１】
図４は、図３の実施例の半導体装置の製造方法を示す。工程Ｒ１において、Ｃ面放熱板電極４の上にはんだ箔（３）を介して半導体素子２を載せ、加熱装置によって所定の温度ではんだ箔を溶融させ、その後硬化させて、半導体素子２とＣ面放熱板電極４のはんだ付けを行う。つまり、はんだ層３で半導体素子２とＣ面放熱板電極４とが接合される。次の工程Ｒ２は、図２に示したものと同様に、ボンディングワイヤ１０で信号用電極９と半導体素子２の電極とを接続する。次に工程Ｒ３において、半導体素子２の上にＥ面放熱板電極８と導体部１３の一体形成されたものを治具にて所定間隔を保持して、Ｃ面放熱板電極４と平行に配置する。そして還元雰囲気においてはんだ注入孔１１’のＥ面放熱板電極８の放熱面側からはんだが供給され、併せて加熱装置により加熱される。その後、硬化され、図２における説明と同様にして、半導体素子２とＥ面放熱板電極８とがはんだ層５’で接合される。このように、はんだが注入孔１１’から供給され、はんだ自身の毛細管現象により、Ｅ面放熱板電極８と半導体素子２との狭い間隔の部分に適量供給され、はんだ過多をなくすことができ、はんだの垂れのない接合が可能である。その後、工程Ｒ４において、樹脂でモールドされる工程に移行する。この工程は、図２に示したものと同じであり説明は省略する。
【００３２】
なお、はんだ注入孔１１は、Ｅ面放熱板電極８に設けた実施例を説明したが、Ｃ面放熱板電極４’に同様なはんだ注入孔１１’’を形成し、Ｃ面放熱板電極４’と半導体素子２’との接合の際のはんだ供給をこのはんだ注入孔１１’’で行ってもよい（図９参照）。Ｅ面放熱板電極８側は少なくとも実施し、Ｃ面放熱板電極４側は選択的に実施してもよい。前述同様の効果を奏し、はんだの垂れのない両面の放熱板の接合が可能で、半導体装置の信頼性が向上する。
【００３３】
次に、図５は、本発明の他の実施例を示す。この例では、Ｅ面放熱板電極８にはんだ逃がし溝１４が形成されている。導体ブロック６の半導体素子２との接合面と反対側の、導体ブロック６の外周囲に対応して形成され、このはんだ逃がし溝１４は、対面する矩形状の導体ブロック６の外縁形状に対応した形状（例えば矩形状）にＥ面放熱板電極８に形成される。溝の大きさは、半導体装置の全体の厚みのバラツキ、およびはんだ供給量のバラツキを考慮して決定する。Ｅ面放熱板電極８と導体ブロック６の間に所定の厚さのはんだ箔（７）を供給して、はんだ付けを行う場合に、過多のはんだは、このはんだ逃がし溝１４に吸収され、はんだの垂れを可及的になくすことができる。
【００３４】
はんだ逃がし溝１４は導体ブロック６の外縁をおおうようにＥ面放熱板電極８の下面（放熱板とは反対側）に開口し、その導体ブロック６の外縁が溝幅の中間にくるように位置している。また、このはんだ逃がし溝１４は、図８の（ａ）のように導体ブロック６の外縁に沿って環状に連続して形成すること（一部に不連続があってもよい）、（ｂ）に示すように導体ブロック６の各辺部に対応して間欠的に形成すること、（ｃ）に示すように導体ブロック６の外縁の特にコーナー部に対応してスポット的に形成すること等適宜の形態を採用できる。また、はんだが特に垂れやすい場所がわかっていればその部分にのみはんだ逃がし溝１４を形成するだけでよい。なお、はんだ逃がし溝は、文字通り溝状に形成されるものであるが、はんだを逃がす目的からすれば、溝形態でなくて凹部でもよい。つまりはんだ逃がし凹部をＥ面放熱板電極８等の第１の放熱板の導体部側に形成してもよい。はんだ逃がし溝ははんだ逃がし凹部の一形態ということができる。
【００３５】
なお、はんだ逃がし溝１４を設ける実施例は、前述のはんだ注入孔１１を設ける実施例と結合して実施してもよい。図１１は結合した例を示す。Ｅ面放熱板電極８には、図１で示した形状と同形状の大径孔部および小径孔部を有するはんだ注入孔１１が設けられるとともに、下面（導体ブロック６に面した側）に図５で示した形状と同形状の環状のはんだ逃がし溝１４が導体ブロック６の外縁に沿って設けられる。これにより、導体ブロック６とＥ面放熱板電極８とのはんだ付け工程において、毛細管現象によりはんだを適量供給できることに加え、はんだ過多が生じてもはんだ逃がし溝１４に吸収され、はんだの垂れをさらに可及的になくすことができる。
【００３６】
図６は、図５の実施例における半導体装置の製造方法を示す。工程Ｑ１および工程Ｑ２は、図２のＳ１、Ｓ２と同様であり、半導体素子２を挟んでその両側Ｃ面放熱板電極４と導体ブロック６をはんだ接合し、ボンディングワイヤ１０の結線を行う。工程Ｑ３において、導体ブロック６の上に所定の厚さのはんだ箔（７）を介してＥ面放熱板電極８を、導体ブロック６とはんだ逃がし溝１４を位置合わせした状態で導体ブロック６に載せて治具で固定する。還元雰囲気において加熱装置によって所定の温度ではんだ箔を溶融させ、その後、硬化させ、はんだ層７によってはんだ付けを行う。この際に、過多となりはみだしたはんだは、はんだ逃がし溝１４に吸収される。これにより、はんだ量のバラツキによるはんだ過多の場合のはんだの垂れを可及的になくすことができる。その後、Ｑ４で前述と同様、樹脂でモールドされる。
【００３７】
なお、以上の説明で、はんだ注入孔は図７の（ａ）のように段付孔の形態であったがこれ以外に、同図（ｂ）に示すように上部にテーパ部３１ａ（上方へ開く）が形成され、これの小径側端と連続する小径孔部３１ｂとが結合したはんだ注入孔３１、あるいは同図（ｃ）に示すように注入側が大径開口として開口しそこから縮径小径となるように縮径して下端に開口するような全体がテーパ状のはんだ注入孔４１とすることもできる。さらに、同図（ｄ）に示すようにはんだ注入口側にテーパ角の大きいテーパ孔部５１ａを、またそれに続いてそれよりテーパ角の小さいテーパ孔部５１ｂが連なるようにした複数段テーパ孔（この例では２段テーパ孔）のはんだ注入孔５１としてもよい。このように要するにはんだ注入孔の注入口を大きく、それとは反対側のはんだ注出側を小さく形成することで、はんだの注入を容易にするとともにはんだの毛細管現象を有効に生じさせることができる。
【図面の簡単な説明】
【図１】本発明の半導体装置の一例を示す縦断面図。
【図２】図１に示す半導体装置の製造方法を示す説明図。
【図３】図１の他の実施例を示す縦断面図。
【図４】図３に示す半導体装置の製造方法を示す説明図。
【図５】本発明の半導体装置の他の実施例示す縦断面図。
【図６】図５に示す半導体装置の製造方法を示す説明図。
【図７】本発明に係るはんだ注入孔の他の実施例を示す断面図。
【図８】本発明に係るはんだ逃がし溝の他の実施例を示す説明図。
【図９】本発明の半導体装置の他の実施例示す説明図。
【図１０】本発明の半導体装置の他の実施例示す縦断面図。
【図１１】本発明の半導体装置の他の実施例示す縦断面図。
【符号の説明】
１ 半導体装置
２,２’ 半導体素子
３,３’ はんだ層
４,４’ Ｃ面放熱板電極
５,５’,５’’ はんだ層
６,６’ 導体ブロック
７ はんだ層
８ Ｅ面放熱板電極
１１,１１’,１１’’ はんだ注入孔
１３ 導体部
１４ はんだ逃がし溝
１５ 面取部[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor equipment fitted with heat radiating plate on both sides of the semiconductor device.
[0002]
[Prior art]
In recent years, an inverter power module having a built-in semiconductor chip (semiconductor element) suitable for high withstand voltage and large current has been widely used because the size of the device can be reduced. As this semiconductor element, for example, there is an IGBT (insulated gate bipolar transistor) or the like. These semiconductor elements are required to efficiently dissipate heat generated during use.
[0003]
[Patent Document 1]
Japanese Patent Laid-Open No. 2002-329828
[Problems to be solved by the invention]
As a prior art, Patent Document 1 proposes that a heat dissipation plate is provided on both sides of a heating element. In this type of power module that has a heat radiation function on both sides, it is necessary to make the parallelism and the distance between both heat radiation plates constant in consideration of attachment to a cooler that cools the power module. However, in the prior art, due to the influence of the tilt and the thickness variation of the material generated when soldering the heating element and the electrode block disposed between the heating element and the heat sink, the electrode block of both heat sinks The amount of solder may be excessive in the soldering part of the heat sink to be joined to. If the amount of solder is excessive, excess solder will sag, resulting in insulation failure at the guard ring part of the heating element and the wire bond part for signal lines, and reliability may be reduced due to abnormal solder fillet shape. There is.
[0005]
The present invention has been made against the background described above, and it is an object of the present invention to provide a highly reliable semiconductor device and a method for manufacturing the same that can suppress excessive soldering and dripping.
[0006]
[Means for Solving the Problems and Effects of the Invention]
In order to solve the above problems, a semiconductor device of the present invention includes a semiconductor element, a first heat radiating portion provided on one side surface of the semiconductor element to dissipate heat generated by the semiconductor element, and the first heat radiating portion. A semiconductor device comprising a second heat dissipating part provided substantially parallel to the other side of the semiconductor element,
First and second heat radiation member opposite to the side facing the semiconductor element respectively and the heat radiating surface, at least one of the first and second heat radiation member, for joining its radiating portion and the semiconductor element solder injection hole is formed through the heat dissipation unit, that the solder injection hole is radiating side is wide radiating surface side opposite side is formed at an small diameter, from the radiating surface side of the solder injection hole of the heat radiating portion A solder layer for joining to the semiconductor element is formed on the side opposite to the heat dissipation surface side by the supplied solder.
[0007]
With the above configuration, the supply of solder makes use of the property that the solder tends to enter into a narrow space due to the capillary phenomenon of the solder itself, and an appropriate amount of solder is supplied to the narrow gap portion of the joint, thereby eliminating excessive solder (preventing or suppressing) ) And can solve the problem caused by dripping of solder.
[0008]
In the present invention, the conductor part is integrally formed so as to protrude to the side of the second heat radiating part facing the semiconductor element, and the conductor part has a shape smaller than the outer periphery of the semiconductor element. A solder injection hole for joining is formed through the portion, and a solder layer for joining the semiconductor element and the conductor portion is formed by the solder supplied from the heat radiation surface side of the injection hole. To do.
[0009]
With the above configuration, when the second heat radiating portion and the conductor portion are integrally formed, an appropriate amount of solder is supplied to the portion between the semiconductor element and the conductor portion through the injection hole, and excessive solder can be eliminated. The reliability of the apparatus can be improved.
[0010]
Furthermore, the present invention provides a semiconductor element, a first heat radiating plate provided on one side surface of the semiconductor element to dissipate heat generated by the semiconductor element, a conductor portion provided on the other side surface of the semiconductor element, A semiconductor device comprising a second heat radiating plate provided substantially parallel to the first heat radiating plate on a side opposite to the side facing the semiconductor element of the conductor portion,
The first heat sink to the opposite side of the side facing the semiconductor element and the heat radiating surface and the second heat sink to the opposite side of the side facing the conductor portion and the heat radiating surface, the first and second heat radiation At least one of the plates is formed with a solder injection hole penetrating the heat dissipation plate for joining the heat dissipation plate and the semiconductor element and / or the heat dissipation plate, the conductor, and the semiconductor element. The heat dissipation side is wide and the opposite side to the heat dissipation surface is formed with a small diameter, and the solder is supplied from the heat dissipation surface of the solder injection hole of the heat dissipation plate for bonding the semiconductor element on the opposite side of the heat dissipation surface A solder layer for joining with the solder layer and / or the conductor portion is formed.
[0011]
With the above configuration, when the conductor portion and the second heat radiating plate are provided separately, the solder supplied from the injection hole is supplied in an appropriate amount to the narrowly spaced portion of the joint, thereby eliminating excessive solder. Therefore, it is possible to join the solder as much as possible.
[0012]
The present invention also includes a semiconductor element, a first heat radiating plate provided on one side surface of the semiconductor element to dissipate heat generated by the semiconductor element, a conductor portion provided on the other side surface of the semiconductor element, A semiconductor device comprising a second heat radiating plate provided substantially parallel to the first heat radiating plate on the opposite side of the conductor portion facing the semiconductor element,
On the side facing the conductor portion of the second heat radiating plate are miss starve groove solder corresponding to the outer periphery of the conductor portion is formed, in the solder escape groove, characterized in that the excess solder is accommodated .
[0013]
With the above configuration, when soldering is performed by supplying a solder foil having a predetermined thickness between the second heat radiating plate and the conductor portion, the solder escape groove is provided. The portion protruding by the variation can be released into the groove, and the variation in the amount of solder can be absorbed to prevent the solder from dripping as much as possible.
[0014]
Further, specifically, the solder escape grooves formed in correspondence with the outer periphery of the conductor portion, the outer edge of the conductor portion is provided so as to be located in the middle of the width of the solder escaping groove, also, the conductor portions There is definitive solder escape starvation grooves when formed in rectangular conductor blocks are formed corresponding to all the sides of the conductor block, the conductor portion and the appropriate amount of solder between the second heat radiating plate in addition to the supplied effect, it is absorbed into the solder escape starvation groove even if solder excess, can be eliminated more as much as possible the solder dripping.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to examples shown in the drawings. FIG. 1 is a longitudinal sectional view showing an example of a semiconductor device according to the present invention. The semiconductor device 1 includes a semiconductor element (for example, an IGBT (insulated gate bipolar transistor) element) 2 having, for example, a rectangular shape or a rectangular shape (hereinafter referred to as a rectangular shape), and a solder layer 3 on one side surface of the semiconductor element 2. The C-surface heat radiation plate electrode (IGBT collector surface) 4 serving as the first heat radiation part joined in step 4 and the other side of the semiconductor element 2 have a rectangular shape smaller than the semiconductor element 2 and are joined by the solder layer 5. An E surface heat radiation plate electrode (IGBT emitter surface) 8 as a second heat radiation portion joined by a solder layer 7 to the conductor block 6 as a conductor portion and a surface opposite to the joining surface of the semiconductor element 2 of the conductor block 6. And comprising.
[0020]
The C-surface heat radiation plate electrode 4, the E-surface heat radiation plate electrode 8, and the conductor block 6 are formed of a material having good thermal conductivity such as copper or aluminum. The C-surface heat radiation plate electrode 4 and the E-surface heat radiation plate electrode 8 are formed in a rectangular plate shape (not limited to a rectangular shape, but may be a square shape, a trapezoid shape, or other appropriate shape), and each lead is electrically connected to the outside. 4a and 8a.
[0021]
An electrode (not shown) of the semiconductor element 2 is connected to an external signal electrode 9 by a bonding wire 10 such as gold or aluminum. The conductor block 6 functions as a spacer for maintaining a distance between the semiconductor element 2 and the E-plane heat radiation plate electrode 8 so that the form of the bonding wire 10 is maintained.
[0022]
The E surface heat sink electrode 8 is provided with a solder injection hole 11 through which solder is injected. The solder injection hole 11 has a shape with a wide upper portion and a small inner diameter. Thus, in this embodiment, the solder is supplied by utilizing the capillary phenomenon of the solder itself. In order to use the capillary phenomenon, in manufacturing a semiconductor device, it is necessary to set a desired distance between the E-plane heat radiation plate electrode 8 and the conductor block 6 and hold it with a jig or the like. The distance between them is preferably about 100 μm to 200 μm, for example. Further, the diameter of the solder injection hole 11 (small diameter hole portion 11b) is set in consideration so that the solder is smoothly supplied. If the hole diameter is too small, the surface tension of the solder becomes too large to be injected, and if too large, the heat dissipation may not be deteriorated. Therefore, the hole diameter of the solder injection hole 11 is preferably 1 mm or more. The outer diameter of the large-diameter hole portion 11a corresponding to the injection hole of the solder injection hole 11 may be circular, rectangular, or other appropriate shape, and may be determined in consideration of solder injection workability. If the large-diameter hole portion 11a corresponding to the injection port is also circular, for example, the hole diameter is 2 mm or more, and the ratio of the large-diameter hole portion 11a and the small-diameter hole portion 11b is 1.5: 1 to 7: 1. It can be said that it is preferable to set the degree to be about the above-described function of the inlet and the function of the throttle.
[0023]
The semiconductor device 1 is joined to the semiconductor element 2 and the C-surface heat sink electrode 4 and the conductor block 6, connected to the signal electrode 9, and joined to the E-surface heat sink electrode 8, and then a thermosetting resin or the like. It is sealed by molding with a mold resin 12 such as an epoxy resin.
[0024]
Next, a method for manufacturing the semiconductor device 1 shown in FIG. 2 will be described. In step S1, the semiconductor element 2 is placed on the C-surface heat radiation plate electrode 4 via the solder foil (3), and the conductor block 6 is placed on the semiconductor element 2 via the solder foil (5). The solder foil is melted at a predetermined temperature by a heating device and then cured, and the semiconductor element 2, the C-surface heat radiation plate electrode 4 and the conductor block 6 are soldered. That is, the semiconductor element 2 and the C-plane heat radiation plate electrode 4 are joined by the solder layer 3, and the semiconductor element 2 and the conductor block 6 are joined by the solder layer 5.
[0025]
Next, in step S2, the signal electrode 9 and the electrode of the semiconductor element 2 are connected by wire bonding.
[0026]
In step S3, the E-surface heat radiation plate electrode 8 is held on the conductor block 6 with a jig at a predetermined interval, and is arranged in parallel with the C-surface heat radiation plate electrode 4, and the E surface of the solder injection hole 11 in a reducing atmosphere. Solder is supplied from the heat dissipation surface side of the heat dissipation plate electrode 8. In addition, it is heated by a heating device. The soldering temperature is about 30 to 70 ° C. higher than the solder melting temperature. The soldering temperature varies depending on the composition and type of solder used, and the outline may be as described above, but is not particularly limited. Since the supply of the solder is due to the capillary phenomenon of the solder itself, it is easy to enter the narrow space, and it is difficult to supply it to the portion where the interval is wide. Therefore, the solder does not protrude beyond the desired location or is difficult to protrude. Soldering is performed while performing an oxidation-reduction reaction in a reducing atmosphere. Then, it hardens | cures and the conductor block 6 and the E surface heat sink electrode 8 are joined by the solder layer 7. FIG. In this way, the solder is supplied from the solder injection hole 11, and an appropriate amount is supplied to the narrow space between the E-surface heat radiation plate electrode 8 and the conductor block 6 due to the capillary phenomenon of the solder itself, thereby eliminating excessive solder as much as possible. Therefore, it is possible to perform bonding with little or no solder dripping, and the reliability of the semiconductor device is improved.
[0027]
In addition, when solder protrudes in the solder injection hole 11 portion (large diameter hole portion 11a: corresponding to the injection port) on the upper surface of the E-surface heat radiation plate electrode 8, in order to ensure the flatness of the heat dissipation portion, It is desirable to remove the raised solder portion flatly.
[0028]
Thereafter, in step S4, the semiconductor device 1 is set in a mold die (not shown), and a thermosetting resin (for example, epoxy resin) is injected and cured. The semiconductor device 1 is sealed with a resin 12, and the semiconductor element 2 is protected from external mechanical and environmental stresses. At this time, the lower surface of the C-surface heat radiation plate electrode 4 and the upper surface of the E-surface heat radiation plate electrode 8 are exposed surfaces so that the resin does not go around. This is to efficiently dissipate heat when the semiconductor element 2 is used.
[0029]
Next, FIG. 10 shows another embodiment of the present invention. A chamfered portion 15 is formed by continuously chamfering corner portions of the lower surface (side facing the semiconductor element 2) of the rectangular conductor block 6 ′ in an annular shape. Thereby, in the soldering process, the fillet shape of the solder layer 5 ″ between the semiconductor element 2 and the conductor block 6 ′ can be made an appropriate shape.
[0030]
In addition, you may form the E surface heat sink electrode 8 and the conductor block 6 integrally. FIG. 3 shows an embodiment thereof. A conductor portion 13 is integrally formed on the lower surface of the E-surface heat radiation plate electrode 8 by pressing or the like, and a solder injection hole 11 ′ is formed through the E-surface heat radiation plate electrode 8 and the conductor portion 13. The upper portion of the solder injection hole 11 ′ is a large-diameter hole portion 11′a (also referred to as a counterbore of the hole opening portion, which corresponds to a solder injection port), and subsequently, a small-diameter hole portion 11′b is formed. The lower end opens to the lower surface of the conductor portion 13. The functions and the like of the large diameter hole portion 11′a and the small diameter hole portion 11′b are the same as in the previous embodiment. Solder is supplied from the large-diameter hole portion 11′a of the injection hole 11 ′, and the solder is guided downward through the small-diameter hole portion 11′b, whereby the conductor portion 13 and the semiconductor element 2 are joined. . As described above, an appropriate amount of solder is supplied based on the capillary phenomenon of the solder, and excessive solder can be eliminated as much as possible.
[0031]
FIG. 4 shows a method for manufacturing the semiconductor device of the embodiment of FIG. In step R1, the semiconductor element 2 is placed on the C-surface heat radiating plate electrode 4 via the solder foil (3), the solder foil is melted at a predetermined temperature by a heating device, and then cured, and the semiconductor element 2 and C The surface radiator plate electrode 4 is soldered. That is, the semiconductor element 2 and the C-plane heat radiation plate electrode 4 are joined by the solder layer 3. In the next step R2, the signal electrode 9 and the electrode of the semiconductor element 2 are connected by the bonding wire 10 in the same manner as shown in FIG. Next, in step R3, the E-surface heat radiation plate electrode 8 and the conductor portion 13 integrally formed on the semiconductor element 2 are arranged in parallel with the C-surface heat radiation plate electrode 4 while maintaining a predetermined interval with a jig. To do. In a reducing atmosphere, solder is supplied from the heat radiation surface side of the E-surface heat radiation plate electrode 8 of the solder injection hole 11 ′, and is also heated by a heating device. Thereafter, it is cured, and the semiconductor element 2 and the E-surface heat radiating plate electrode 8 are joined by the solder layer 5 ′ in the same manner as described in FIG. In this way, the solder is supplied from the injection hole 11 ′, and due to the capillary phenomenon of the solder itself, an appropriate amount is supplied to the narrow space portion between the E-surface heat radiation plate electrode 8 and the semiconductor element 2, and excessive solder can be eliminated. Bonding without solder dripping is possible. Thereafter, in step R4, the process proceeds to a step of molding with resin. This step is the same as that shown in FIG.
[0032]
In addition, although the solder injection hole 11 demonstrated the Example provided in the E surface heat sink electrode 8, the same solder injection hole 11 '' was formed in C surface heat sink electrode 4 ', and the C surface heat sink electrode 4 was formed. Solder may be supplied through the solder injection hole 11 ″ when joining “and the semiconductor element 2” (see FIG. 9). The E surface heat sink electrode 8 side may be implemented at least, and the C surface heat sink electrode 4 side may be selectively implemented. The same effect as described above can be obtained, and it is possible to join the heat sinks on both sides without solder dripping, and the reliability of the semiconductor device is improved.
[0033]
Next, FIG. 5 shows another embodiment of the present invention. In this example, a solder escape groove 14 is formed in the E-surface heat radiation plate electrode 8. The solder block 14 is formed corresponding to the outer periphery of the conductor block 6 on the side opposite to the joint surface of the conductor block 6 with the semiconductor element 2, and the solder relief groove 14 corresponds to the outer edge shape of the rectangular conductor block 6 facing the conductor block 6. The E-surface heat radiation plate electrode 8 is formed in a shape (for example, a rectangular shape). The size of the groove is determined in consideration of variations in the overall thickness of the semiconductor device and variations in the amount of solder supplied. When soldering is performed by supplying a solder foil (7) having a predetermined thickness between the E-surface heat radiation plate electrode 8 and the conductor block 6, excessive solder is absorbed by the solder relief groove 14 and soldering is performed. The drooping can be eliminated as much as possible.
[0034]
The solder relief groove 14 is opened on the lower surface of the E-surface heat radiation plate electrode 8 (opposite the heat radiation plate) so as to cover the outer edge of the conductor block 6, and the outer edge of the conductor block 6 is positioned in the middle of the groove width. is doing. Further, the solder relief groove 14 is continuously formed in an annular shape along the outer edge of the conductor block 6 as shown in FIG. 8A (a part may be discontinuous), (b) As shown in FIG. 4, the conductor block 6 is intermittently formed corresponding to each side portion, and the outer edge of the conductor block 6 is formed in a spot shape corresponding to the corner portion as shown in FIG. Can be adopted. Further, if the place where the solder is particularly liable to drip is known, it is only necessary to form the solder escape groove 14 only in that portion. The solder escape groove is literally formed in a groove shape, but for the purpose of releasing the solder, it may be a recess instead of a groove shape. That is, the solder relief recess may be formed on the conductor portion side of the first heat radiation plate such as the E-surface heat radiation plate electrode 8. It can be said that the solder relief groove is a form of a solder relief recess.
[0035]
The embodiment in which the solder relief groove 14 is provided may be combined with the embodiment in which the solder injection hole 11 is provided. FIG. 11 shows a combined example. The E-surface heat radiation plate electrode 8 is provided with a solder injection hole 11 having a large-diameter hole portion and a small-diameter hole portion having the same shape as that shown in FIG. 1, and a lower surface (side facing the conductor block 6). An annular solder relief groove 14 having the same shape as that indicated by 5 is provided along the outer edge of the conductor block 6. As a result, in the soldering process between the conductor block 6 and the E-surface heat radiation plate electrode 8, in addition to being able to supply an appropriate amount of solder by capillary action, even if excessive solder occurs, it is absorbed by the solder escape groove 14 and further dripping of the solder. It can be eliminated as much as possible.
[0036]
FIG. 6 shows a method of manufacturing a semiconductor device in the embodiment of FIG. Steps Q1 and Q2 are the same as S1 and S2 of FIG. 2, and the C-side heat radiation plate electrode 4 and the conductor block 6 on both sides of the semiconductor element 2 are soldered and the bonding wires 10 are connected. In step Q3, the E-surface heat radiation plate electrode 8 is placed on the conductor block 6 with the conductor block 6 and the solder relief groove 14 aligned with each other via the solder foil (7) having a predetermined thickness on the conductor block 6. Fix with a jig. The solder foil is melted at a predetermined temperature by a heating device in a reducing atmosphere, then cured, and soldered by the solder layer 7. At this time, the excessive and protruding solder is absorbed by the solder relief groove 14. Thereby, the dripping of the solder in the case of excessive solder due to variation in the amount of solder can be eliminated as much as possible. Thereafter, in Q4, the resin is molded as described above.
[0037]
In the above description, the solder injection hole is in the form of a stepped hole as shown in FIG. 7A. In addition to this, as shown in FIG. A solder injection hole 31 in which the end of the small diameter side is connected to the continuous small diameter hole portion 31b, or the injection side opens as a large diameter opening as shown in FIG. It is also possible to make the whole into a tapered solder injection hole 41 that is reduced in diameter so as to open at the lower end. Furthermore, as shown in FIG. 6D, a taper hole 51a having a large taper angle on the solder injection port side and a taper hole 51b having a taper angle smaller than the taper hole 51a are connected to each other. In this example, a two-step tapered hole) may be used as the solder injection hole 51. In short, by forming a large solder injection hole and a small solder pouring side opposite to the solder injection hole, it is possible to facilitate the injection of solder and to effectively cause the capillary action of the solder.
[Brief description of the drawings]
FIG. 1 is a longitudinal sectional view showing an example of a semiconductor device of the present invention.
2 is an explanatory view showing a manufacturing method of the semiconductor device shown in FIG. 1; FIG.
3 is a longitudinal sectional view showing another embodiment of FIG. 1. FIG.
4 is an explanatory view showing a manufacturing method of the semiconductor device shown in FIG. 3; FIG.
FIG. 5 is a longitudinal sectional view showing another embodiment of the semiconductor device of the present invention.
6 is an explanatory view showing a manufacturing method of the semiconductor device shown in FIG. 5;
FIG. 7 is a sectional view showing another embodiment of a solder injection hole according to the present invention.
FIG. 8 is an explanatory view showing another embodiment of a solder relief groove according to the present invention.
FIG. 9 is an explanatory view showing another embodiment of the semiconductor device of the present invention.
FIG. 10 is a longitudinal sectional view showing another embodiment of the semiconductor device of the invention.
FIG. 11 is a longitudinal sectional view showing another embodiment of the semiconductor device of the invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Semiconductor device 2, 2 'Semiconductor element 3, 3' Solder layer 4, 4 'C surface heat sink electrode 5, 5', 5 '' Solder layer 6, 6 'Conductor block 7 Solder layer 8 E surface heat sink electrode 11 , 11 ', 11''Solder injection hole 13 Conductor portion 14 Solder relief groove 15 Chamfered portion

Claims (6)

半導体素子と、この半導体素子の発熱を放熱するために半導体素子の一側面側に設けられる第１の放熱部と、この第１の放熱部と略平行に前記半導体素子の他側面側に設けられる第２の放熱部とを備えた半導体装置であって、
前記第１および第２の放熱部はそれぞれ前記半導体素子に面した側との反対側を放熱面とし、
前記第１および第２の放熱部の少なくとも１つに、その放熱部と半導体素子とを接合するためのはんだ注入孔が放熱部を貫通して形成されており、そのはんだ注入孔は放熱面側が広く放熱面側とは反対側が小径をなして形成され、
前記放熱部のはんだ注入孔の放熱面側から供給されるはんだにより、前記放熱面側とは反対側に前記半導体素子との接合のためのはんだ層が形成されることを特徴とする半導体装置。A semiconductor element, a first heat radiating portion provided on one side surface of the semiconductor element to dissipate heat generated by the semiconductor element, and provided on the other side surface of the semiconductor element substantially parallel to the first heat radiating portion. A semiconductor device comprising a second heat dissipating part,
Wherein the first and second heat radiation member opposite to the side facing the respective said semiconductor element and the heat radiating surface,
At least one of the first and second heat radiating portions has a solder injection hole formed through the heat radiating portion for joining the heat radiating portion and the semiconductor element. Widely formed on the opposite side of the heat dissipation surface with a small diameter ,
The solder is supplied from the heat radiating surface side of the solder injection hole of the heat radiating portion, and wherein a solder layer for bonding between the semiconductor element being formed on the side opposite from the heat radiation surface side. 前記第２の放熱部の前記半導体素子に面する側に突出して導体部が一体形成され、この導体部は前記半導体素子の外周囲より小さい形状とし、この導体部と前記第２の放熱部とを貫通して接合用のはんだ注入孔が形成され、この注入孔の放熱面側から供給されるはんだにより前記半導体素子と前記導体部との接合のためのはんだ層が形成されることを特徴とする請求項１記載の半導体装置。  A conductor portion is formed integrally with the second heat radiating portion so as to protrude to the side facing the semiconductor element, the conductor portion having a shape smaller than the outer periphery of the semiconductor element, and the conductor portion and the second heat radiating portion; A solder injection hole for joining is formed, and a solder layer for joining the semiconductor element and the conductor portion is formed by the solder supplied from the heat radiation surface side of the injection hole. The semiconductor device according to claim 1. 半導体素子と、この半導体素子の発熱を放熱するために半導体素子の一側面側に設けられる第１の放熱板と、前記半導体素子の他側面側に設けられる導体部と、この導体部の前記半導体素子と面した側と反対側に、前記第１の放熱板と略平行に設けられる第２の放熱板とを備えた半導体装置であって、
前記第１の放熱板は前記半導体素子に面した側との反対側を放熱面とし、かつ第２の放熱板は前記導体部と面した側との反対側を放熱面とし、
前記第１および第２の放熱板の少なくとも１つに、その放熱板と半導体素子および／または放熱板と導体部と半導体素子とを接合するためのはんだ注入孔が放熱板を貫通して形成されており、そのはんだ注入孔は放熱面側が広く放熱面側とは反対側が小径をなして形成され、
前記放熱板のはんだ注入孔の放熱面側から供給されるはんだにより、前記放熱面側とは反対側に前記半導体素子との接合のためのはんだ層および／または導体部との接合のためのはんだ層が形成されることを特徴とする半導体装置。A semiconductor element; a first heat dissipating plate provided on one side of the semiconductor element to dissipate heat generated by the semiconductor element; a conductor provided on the other side of the semiconductor element; and the semiconductor of the conductor A semiconductor device comprising a second heat radiating plate provided substantially parallel to the first heat radiating plate on the side opposite to the side facing the element,
Said first heat radiating plate and the heat radiating surface opposite the side facing the semiconductor element, and the second heat radiating plate and the heat radiating surface opposite the side facing said conductor portion,
At least one of the first and second heat sinks is formed with a solder injection hole penetrating the heat sink for joining the heat sink and the semiconductor element and / or the heat sink, the conductor, and the semiconductor element. The solder injection hole is formed with a large diameter on the heat dissipation surface side and a small diameter on the opposite side to the heat dissipation surface side .
The solder is supplied from the heat radiating surface side of the solder injection hole of the heat radiating plate, solder for bonding the solder layer and / or the conductor portion for bonding with the semiconductor element on the side opposite to the heat radiation surface side A semiconductor device, wherein a layer is formed. 半導体素子と、この半導体素子の発熱を放熱するために半導体素子の一側面側に設けられる第１の放熱板と、前記半導体素子の他側面側に設けられる導体部と、この導体部の前記半導体素子と面した側と反対側に、前記第１の放熱板と略平行に設けられる第２の放熱板とを備えた半導体装置であって、
前記第２の放熱板の前記導体部に面した側に、導体部の外周囲に対応してはんだ逃がし溝が形成され、このはんだ逃がし溝には余剰なはんだが収容されることを特徴とする半導体装置。A semiconductor element; a first heat dissipating plate provided on one side of the semiconductor element to dissipate heat generated by the semiconductor element; a conductor provided on the other side of the semiconductor element; and the semiconductor of the conductor A semiconductor device comprising a second heat radiating plate provided substantially parallel to the first heat radiating plate on the side opposite to the side facing the element,
Characterized on the side facing the conductor part of the second radiating plate, escape starvation groove solder corresponding to the outer periphery of the conductor portion is formed, that the excess solder is accommodated in the solder escape groove A semiconductor device. 前記導体部の外周囲に対応して形成したはんだ逃がし溝は、前記導体部の外縁がはんだ逃がし溝の幅の中間に位置していることを特徴とする請求項４に記載の半導体装置。  5. The semiconductor device according to claim 4, wherein an outer edge of the conductor portion is located in the middle of the width of the solder escape groove. 前記導体部は四角形状の導体ブロックにて形成し、前記はんだ逃がし溝は、導体ブロックの全ての辺に対応して形成されていることを特徴とする請求項４又は請求項５に記載の半導体装置。  6. The semiconductor according to claim 4, wherein the conductor portion is formed by a rectangular conductor block, and the solder relief groove is formed corresponding to all sides of the conductor block. apparatus.
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