JP2004303869A - Semiconductor device and its manufacturing method - Google Patents
Semiconductor device and its manufacturing method Download PDFInfo
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- JP2004303869A JP2004303869A JP2003093574A JP2003093574A JP2004303869A JP 2004303869 A JP2004303869 A JP 2004303869A JP 2003093574 A JP2003093574 A JP 2003093574A JP 2003093574 A JP2003093574 A JP 2003093574A JP 2004303869 A JP2004303869 A JP 2004303869A
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Abstract
Description
【0001】
【発明の属する技術分野】
本発明は、半導体素子の両面に放熱板を装着した半導体装置およびその製造方法に関する。
【0002】
【従来の技術】
近年、高耐圧、大電流に適した半導体チップ(半導体素子)が内蔵されたインバータパワーモジュールが、機器の小型化が図れるため多く使われている。この半導体素子として、例えば、IGBT(絶縁ゲート型バイポーラトランジスタ)等がある。これら半導体素子は、使用時の発熱を効率よく放熱することが要求される。
【0003】
【特許文献1】
特開2002−329828号公報
【0004】
【発明が解決しようとする課題】
従来技術として、特許文献1には、発熱素子の両面に放熱板を設けた提案がされている。この種の両面に放熱機能を持たせるパワーモジュールにおいては、これを冷却する冷却器への取り付けを考慮すると、両方の放熱板の平行度および間隔を一定にする必要がある。しかしながら、従来技術では、発熱素子や発熱素子と放熱板との間に配置される電極ブロックのはんだ付けのときに発生した傾きや材料の厚みのバラツキの影響により、両方の放熱板のうち電極ブロックと接合する放熱板のはんだ付け部において、はんだ量が過多となることがある。はんだ量が過多になると、余分なはんだが垂れて、発熱素子のガードリング部や信号線用のワイヤボンド部で絶縁不良を発生したり、はんだフィレット形状の異常により信頼性が低下したりする問題がある。
【0005】
本発明は、上記した点を背景になされたものであり、はんだの過多さらに垂れを抑制し信頼性の高い半導体装置およびその製造方法を提供することを課題とする。
【0006】
【課題を解決するための手段及び発明の効果】
上記課題を解決するために本発明半導体装置は、半導体素子と、この半導体素子の発熱を放熱するために半導体素子の一側面側に設けられる第1の放熱部と、この第1の放熱部と略平行に前記半導体素子の他側面側に設けられる第2の放熱部とを備えた半導体装置であって、
第1および第2の放熱部はそれぞれ半導体素子に面した側と反対側を放熱面とし、第1および第2の放熱部の少なくとも1つに接合用のはんだ注入孔を設け、この注入孔の放熱面側から供給されるはんだにより放熱面側とは反対側に前記半導体素子との接合のためのはんだ層が形成されることを特徴とする。
【0007】
上記構成により、はんだの供給は、はんだ自身の毛細管現象によりはんだが狭いところに入り込み易い性質を利用し、接合部の狭い間隔の部分にはんだが適量供給され、はんだ過多をなくす(防止ないし抑制する)ことができ、はんだの垂れによる問題を解決できる。
【0008】
また、本発明は、第2の放熱部の半導体素子に面する側に突出して導体部が一体形成され、この導体部は半導体素子の外周囲より小さい形状とし、この導体部と第2の放熱部とを貫通して接合用のはんだ注入孔が形成され、この注入孔の放熱面側から供給されるはんだにより半導体素子と導体部との接合のためのはんだ層が形成されることを特徴とする。
【0009】
上記構成により、第2の放熱部と導体部が一体形成された場合において、注入孔を通って半導体素子と導体部との間の部分に適量のはんだが供給され、はんだ過多をなくすことができ、装置の信頼性を向上できる。
【0010】
さらに、本発明は、半導体素子と、この半導体素子の発熱を放熱するために半導体素子の一側面側に設けられる第1の放熱板と、半導体素子の他側面側に設けられる導体部と、この導体部の前記半導体素子と面した側と反対側に、第1の放熱板と略平行に設けられる第2の放熱板とを備えた半導体装置であって、
第1の放熱板は半導体素子に面した側と反対側を放熱面とし、かつ第2の放熱板は導体部と面した側と反対側を放熱面とし、第1および第2の放熱板の少なくとも1つに接合用のはんだ注入孔を設け、この注入孔の放熱面側から供給されるはんだにより放熱面側とは反対側に半導体素子との接合のためのはんだ層および/または導体部との接合のためのはんだ層が形成されることを特徴とする。
【0011】
上記構成により、導体部と第2の放熱板が別体に設けられた場合において、注入孔から供給されたはんだが、その接合部の狭い間隔の部分に適量分だけ供給され、はんだ過多をなくすことができ、はんだの垂れを可及的に防止した接合ができる。
【0012】
また、本発明は、半導体素子と、この半導体素子の発熱を放熱するために半導体素子の一側面側に設けられる第1の放熱板と、半導体素子の他側面側に設けられる導体部と、この導体部の半導体素子と面した側と反対側に、第1の放熱板と略平行に設けられる第2の放熱板とを備えた半導体装置であって、
第2の放熱板の導体部に面した側に、導体部の外周囲に対応してはんだ逃げ用の溝が形成されたことを特徴とする。
【0013】
上記構成により、第2の放熱板と導体部の間に所定の厚さのはんだ箔を供給して、はんだ付けを行う場合に、上記はんだ逃げ用溝が設けられていることにより、はんだ量のバラツキではみ出した分は溝に逃がすことができ、はんだ量のバラツキを吸収して、はんだの垂れを可及的になくすことができる。
【0014】
さらに、具体的には、第1の放熱板は半導体素子に面した側と反対側を放熱面とし、かつ第2の放熱板は導体部と面した側と反対側を放熱面とし、第1および第2の放熱板の少なくとも第2の放熱板に接合用のはんだ注入孔を設け、この注入孔の放熱面側から供給されるはんだにより放熱面側とは反対側に半導体素子との接合のためのはんだ層および導体部との接合のためのはんだ層の少なくとも導体部との接合のためのはんだ層が形成され、はんだ注入孔が設けられた第2の放熱板にはんだ逃げ用の溝を設けており、導体部と第2の放熱板との間にはんだが適量供給される効果に加え、はんだ過多が生じてもはんだ逃げ用の溝に吸収され、はんだの垂れをさらに可及的になくすことができる。
【0015】
また、本発明は、半導体素子の放熱のための第1の放熱部の上に半導体素子が接合される工程と、第2の放熱部の放熱面とは反対側の面に導体部が一体形成され、半導体素子の上方に導体部が対面するように所定間隔を保った状態で第1の放熱部と略平行に配置され、予め第2の放熱部と導体部を貫通して形成されたはんだ注入孔の第2の放熱部の放熱面側からはんだが供給され、半導体素子と導体部が接合される工程と、を含む。
【0016】
このように製造することで、半導体素子と第2の放熱部の導体部との接合部の狭い間隔の部分に適量のはんだが供給され、はんだの垂れを可及的になくした接合が可能である。
【0017】
さらに、本発明は、半導体素子の放熱のための第1の放熱板の上に半導体素子と、この半導体素子の上に導体部が接合される工程と、予め形成されたはんだ注入孔を有する第2の放熱板が導体部の上方に所定間隔を保った状態で第1の放熱板と略平行に配置され、注入孔の前記第2の放熱板の放熱面側からはんだが供給され、導体部と第2の放熱板が接合される工程と、を含む。
【0018】
このように製造することで、導体部と第2の放熱板との接合部分に適量のはんだが供給され、はんだの垂れを可及的になくした接合が可能で、半導体装置の信頼性の向上が実現できる。
【0019】
【発明の実施の形態】
以下本発明の実施の形態につき図面に示す実施例を参照して説明する。図1は、本発明に係る半導体装置の一例を示す縦断面図である。半導体装置1は、例えば矩形状または方形状(以下矩形状と代表させる)の半導体素子(例えば、IGBT(絶縁ゲートバイポーラ型トランジスタ)素子)2と、この半導体素子2の一側面に、はんだ層3で接合された第1の放熱部としてのC面放熱板電極(IGBTのコレクタ面)4と、半導体素子2の他側面に、半導体素子2より小さい矩形状をなし、はんだ層5で接合された導体部としての導体ブロック6と、導体ブロック6の半導体素子2の接合面の反対面に、はんだ層7で接合された第2の放熱部としてのE面放熱板電極(IGBTのエミッタ面)8とを含み構成される。
【0020】
C面放熱板電極4、E面放熱板電極8および導体ブロック6は、銅、アルミニウム等の熱伝導性のよい材料で形成されている。C面放熱板電極4およびE面放熱板電極8は、矩形板状に形成され(矩形状に限らず、方形、台形その他適宜の形状でもよいが)、それぞれ外部と電気的に接続されるリード4a、8aを有している。
【0021】
半導体素子2の電極(図示せず)は、外部の信号用電極9と、金あるいはアルミニウム等のボンディングワイヤ10で接続されている。導体ブロック6は、半導体素子2とE面放熱板電極8との間の間隔を保持するスペーサの働きをして、ボンディングワイヤ10の部分の形態が保持される。
【0022】
E面放熱板電極8には、はんだ注入用の貫通したはんだ注入孔11が設けられている。はんだ注入孔11は、上部がひろく内部の径が小さい形状としている。このように本実施例では、はんだの供給は、はんだ自身の毛細管現象を利用し行うものである。その毛細管現象の利用のために半導体装置の製造にあたっては、E面放熱板電極8と導体ブロック6との望ましい間隔を設定し、これを治具等で保持する必要がある。それら両者の間隔は、例えば約100μm〜200μmが好ましい。また、はんだ注入孔11の径(小径孔部11b)は、はんだがスムーズに供給されるように考慮して設定する。孔径は、あまり小さいと、はんだの表面張力が大きすぎて注入困難となり、逆にあまり大きいと放熱性が劣化してよくないので、はんだ注入孔11の孔径は1mm以上が好ましい。また、はんだ注入孔11の注入口に相当する大径孔部11aについては、外形は円形状、矩形その他適宜の形状でよく、はんだの注入作業性を考慮して決定すればよい。注入口にあたる大径孔部11aも例えば円形状とすればその孔径は例えば2mm以上、また、大径孔部11aと小径孔部11bとの孔径の比は、1.5:1〜7:1程度とすることが上述の注入口の機能および絞りの機能を生じさせるうえで好適といえる。
【0023】
半導体装置1は、半導体素子2とC面放熱板電極4および導体ブロック6との接合、信号用電極9との結線、E面放熱板電極8との接合がされ、その後、熱硬化性樹脂等のモールド樹脂12、例えばエポキシ樹脂でモールドすることにより封止される。
【0024】
次に、図2に示す半導体装置1の製造方法について説明する。工程S1において、C面放熱板電極4の上にはんだ箔(3)を介して半導体素子2を載せ、また半導体素子2の上にはんだ箔(5)を介して導体ブロック6を載せる。加熱装置によって所定の温度ではんだ箔を溶融させ、その後硬化させ、半導体素子2とC面放熱板電極4および導体ブロック6とのはんだ付けを行う。つまり、はんだ層3で半導体素子2とC面放熱板電極4とが接合され、はんだ層5で半導体素子2と導体ブロック6とが接合される。
【0025】
次に、工程S2において、信号用電極9と半導体素子2の電極とがワイヤボンディングにより結線される。
【0026】
工程S3において、導体ブロック6の上にE面放熱板電極8を治具にて所定間隔を保持して、C面放熱板電極4と平行に配置し、還元雰囲気においてはんだ注入孔11のE面放熱板電極8の放熱面側からはんだが供給される。あわせて加熱装置により加熱される。はんだ付けの温度は、はんだ溶融温度に対して例えば30〜70°C程度高い温度で行う。はんだ付け温度は、使用するはんだの組成・種類により異なり、概略は上記の通りでよいが、特に限定されるものではない。はんだの供給は、はんだ自身の毛細管現象によるため、狭いところに入り込み易く、間隔が広い部分には供給されにくい。したがって、はんだが所望箇所以外にははみ出ないまたははみ出しにくい。還元雰囲気にて酸化還元反応をしながらはんだ付けが行われる。その後、硬化され、導体ブロック6とE面放熱板電極8とがはんだ層7で接合される。このように、はんだがはんだ注入孔11より供給され、はんだ自身の毛細管現象により、E面放熱板電極8と導体ブロック6との狭い間隔の部分に適量供給され、はんだ過多を可及的になくすことができ、はんだの垂れのないまたは少ない接合が可能となって、半導体装置の信頼性が向上する。
【0027】
なお、E面放熱板電極8の上面におけるはんだ注入孔11の部分(大径孔部11a:注入口に相当)において、はんだがはみだした場合は、放熱部の平坦性を確保するために、盛り上ったはんだ部分は平坦に除去することが望ましい。
【0028】
この後、工程S4において、半導体装置1をモールド金型(図示せず)にセットし、熱硬化性樹脂(例えばエポキシ樹脂)を注入し硬化する。半導体装置1は樹脂12で封止され、外部からの機械的および環境ストレスから半導体素子2が保護される。このとき、C面放熱板電極4の下面とE面放熱板電極8の上面は樹脂が回り込まないようにして露出面とする。半導体素子2の使用時の熱を効率よく放熱するためである。
【0029】
次に、図10は本発明の他の実施例を示す。矩形状の導体ブロック6’の下面(半導体素子2に面する側)の角部を環状に連続して面取りして面取部15を形成している。これにより、はんだ付けの工程において、半導体素子2と導体ブロック6’との間のはんだ層5’’のフィレット形状を適切な形状にすることが可能となる。
【0030】
なお、E面放熱板電極8と導体ブロック6とは一体に形成してもよい。図3にその実施例を示している。E面放熱板電極8の下面に導体部13がプレス加工等で一体形成され、E面放熱板電極8と導体部13とを貫通してはんだ注入孔11’が形成されている。このはんだ注入孔11’の上部は、大径孔部11’a(孔開口部の座ぐりとも言え、はんだ注入口に相当する)とされ、それに続いて小径孔部11’bが形成され、その下端が導体部13の下面に開口している。大径孔部11’aおよび小径孔部11’bの機能等については先の実施例と同様である。この注入孔11’の大径孔部11’aからはんだが供給され、そのはんだが小径孔部11’bを通って下方へ導かれることにより、導体部13と半導体素子2とが接合される。前述と同様にはんだの毛細管現象に基づき、適量のはんだが供給され、はんだ過多を可及的になくすことができる。
【0031】
図4は、図3の実施例の半導体装置の製造方法を示す。工程R1において、C面放熱板電極4の上にはんだ箔(3)を介して半導体素子2を載せ、加熱装置によって所定の温度ではんだ箔を溶融させ、その後硬化させて、半導体素子2とC面放熱板電極4のはんだ付けを行う。つまり、はんだ層3で半導体素子2とC面放熱板電極4とが接合される。次の工程R2は、図2に示したものと同様に、ボンディングワイヤ10で信号用電極9と半導体素子2の電極とを接続する。次に工程R3において、半導体素子2の上にE面放熱板電極8と導体部13の一体形成されたものを治具にて所定間隔を保持して、C面放熱板電極4と平行に配置する。そして還元雰囲気においてはんだ注入孔11’のE面放熱板電極8の放熱面側からはんだが供給され、併せて加熱装置により加熱される。その後、硬化され、図2における説明と同様にして、半導体素子2とE面放熱板電極8とがはんだ層5’で接合される。このように、はんだが注入孔11’から供給され、はんだ自身の毛細管現象により、E面放熱板電極8と半導体素子2との狭い間隔の部分に適量供給され、はんだ過多をなくすことができ、はんだの垂れのない接合が可能である。その後、工程R4において、樹脂でモールドされる工程に移行する。この工程は、図2に示したものと同じであり説明は省略する。
【0032】
なお、はんだ注入孔11は、E面放熱板電極8に設けた実施例を説明したが、C面放熱板電極4’に同様なはんだ注入孔11’’を形成し、C面放熱板電極4’と半導体素子2’との接合の際のはんだ供給をこのはんだ注入孔11’’で行ってもよい(図9参照)。E面放熱板電極8側は少なくとも実施し、C面放熱板電極4側は選択的に実施してもよい。前述同様の効果を奏し、はんだの垂れのない両面の放熱板の接合が可能で、半導体装置の信頼性が向上する。
【0033】
次に、図5は、本発明の他の実施例を示す。この例では、E面放熱板電極8にはんだ逃がし溝14が形成されている。導体ブロック6の半導体素子2との接合面と反対側の、導体ブロック6の外周囲に対応して形成され、このはんだ逃がし溝14は、対面する矩形状の導体ブロック6の外縁形状に対応した形状(例えば矩形状)にE面放熱板電極8に形成される。溝の大きさは、半導体装置の全体の厚みのバラツキ、およびはんだ供給量のバラツキを考慮して決定する。E面放熱板電極8と導体ブロック6の間に所定の厚さのはんだ箔(7)を供給して、はんだ付けを行う場合に、過多のはんだは、このはんだ逃がし溝14に吸収され、はんだの垂れを可及的になくすことができる。
【0034】
はんだ逃がし溝14は導体ブロック6の外縁をおおうようにE面放熱板電極8の下面(放熱板とは反対側)に開口し、その導体ブロック6の外縁が溝幅の中間にくるように位置している。また、このはんだ逃がし溝14は、図8の(a)のように導体ブロック6の外縁に沿って環状に連続して形成すること(一部に不連続があってもよい)、(b)に示すように導体ブロック6の各辺部に対応して間欠的に形成すること、(c)に示すように導体ブロック6の外縁の特にコーナー部に対応してスポット的に形成すること等適宜の形態を採用できる。また、はんだが特に垂れやすい場所がわかっていればその部分にのみはんだ逃がし溝14を形成するだけでよい。なお、はんだ逃がし溝は、文字通り溝状に形成されるものであるが、はんだを逃がす目的からすれば、溝形態でなくて凹部でもよい。つまりはんだ逃がし凹部をE面放熱板電極8等の第1の放熱板の導体部側に形成してもよい。はんだ逃がし溝ははんだ逃がし凹部の一形態ということができる。
【0035】
なお、はんだ逃がし溝14を設ける実施例は、前述のはんだ注入孔11を設ける実施例と結合して実施してもよい。図11は結合した例を示す。E面放熱板電極8には、図1で示した形状と同形状の大径孔部および小径孔部を有するはんだ注入孔11が設けられるとともに、下面(導体ブロック6に面した側)に図5で示した形状と同形状の環状のはんだ逃がし溝14が導体ブロック6の外縁に沿って設けられる。これにより、導体ブロック6とE面放熱板電極8とのはんだ付け工程において、毛細管現象によりはんだを適量供給できることに加え、はんだ過多が生じてもはんだ逃がし溝14に吸収され、はんだの垂れをさらに可及的になくすことができる。
【0036】
図6は、図5の実施例における半導体装置の製造方法を示す。工程Q1および工程Q2は、図2のS1、S2と同様であり、半導体素子2を挟んでその両側C面放熱板電極4と導体ブロック6をはんだ接合し、ボンディングワイヤ10の結線を行う。工程Q3において、導体ブロック6の上に所定の厚さのはんだ箔(7)を介してE面放熱板電極8を、導体ブロック6とはんだ逃がし溝14を位置合わせした状態で導体ブロック6に載せて治具で固定する。還元雰囲気において加熱装置によって所定の温度ではんだ箔を溶融させ、その後、硬化させ、はんだ層7によってはんだ付けを行う。この際に、過多となりはみだしたはんだは、はんだ逃がし溝14に吸収される。これにより、はんだ量のバラツキによるはんだ過多の場合のはんだの垂れを可及的になくすことができる。その後、Q4で前述と同様、樹脂でモールドされる。
【0037】
なお、以上の説明で、はんだ注入孔は図7の(a)のように段付孔の形態であったがこれ以外に、同図(b)に示すように上部にテーパ部31a(上方へ開く)が形成され、これの小径側端と連続する小径孔部31bとが結合したはんだ注入孔31、あるいは同図(c)に示すように注入側が大径開口として開口しそこから縮径小径となるように縮径して下端に開口するような全体がテーパ状のはんだ注入孔41とすることもできる。さらに、同図(d)に示すようにはんだ注入口側にテーパ角の大きいテーパ孔部51aを、またそれに続いてそれよりテーパ角の小さいテーパ孔部51bが連なるようにした複数段テーパ孔(この例では2段テーパ孔)のはんだ注入孔51としてもよい。このように要するにはんだ注入孔の注入口を大きく、それとは反対側のはんだ注出側を小さく形成することで、はんだの注入を容易にするとともにはんだの毛細管現象を有効に生じさせることができる。
【図面の簡単な説明】
【図1】本発明の半導体装置の一例を示す縦断面図。
【図2】図1に示す半導体装置の製造方法を示す説明図。
【図3】図1の他の実施例を示す縦断面図。
【図4】図3に示す半導体装置の製造方法を示す説明図。
【図5】本発明の半導体装置の他の実施例示す縦断面図。
【図6】図5に示す半導体装置の製造方法を示す説明図。
【図7】本発明に係るはんだ注入孔の他の実施例を示す断面図。
【図8】本発明に係るはんだ逃がし溝の他の実施例を示す説明図。
【図9】本発明の半導体装置の他の実施例示す説明図。
【図10】本発明の半導体装置の他の実施例示す縦断面図。
【図11】本発明の半導体装置の他の実施例示す縦断面図。
【符号の説明】
1 半導体装置
2,2’ 半導体素子
3,3’ はんだ層
4,4’ C面放熱板電極
5,5’,5’’ はんだ層
6,6’ 導体ブロック
7 はんだ層
8 E面放熱板電極
11,11’,11’’ はんだ注入孔
13 導体部
14 はんだ逃がし溝
15 面取部[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device having a heat sink mounted on both sides of a semiconductor element and a method for manufacturing the same.
[0002]
[Prior art]
In recent years, an inverter power module having a built-in semiconductor chip (semiconductor element) suitable for high withstand voltage and large current has been widely used because the size of the device can be reduced. As this semiconductor element, for example, there is an IGBT (insulated gate bipolar transistor) or the like. These semiconductor elements are required to efficiently dissipate heat generated during use.
[0003]
[Patent Document 1]
Japanese Patent Laid-Open No. 2002-329828
[Problems to be solved by the invention]
As a prior art, Patent Document 1 proposes that a heat dissipation plate is provided on both sides of a heating element. In this type of power module that has a heat radiation function on both sides, it is necessary to make the parallelism and the distance between both heat radiation plates constant in consideration of attachment to a cooler that cools the power module. However, in the prior art, due to the influence of the tilt and the thickness variation of the material generated when soldering the heating element and the electrode block disposed between the heating element and the heat sink, the electrode block of both heat sinks The amount of solder may be excessive in the soldering part of the heat sink to be joined to. If the amount of solder is excessive, excess solder will sag, resulting in insulation failure at the guard ring part of the heating element and the wire bond part for signal lines, and reliability may be reduced due to abnormal solder fillet shape. There is.
[0005]
The present invention has been made against the background described above, and it is an object of the present invention to provide a highly reliable semiconductor device and a method for manufacturing the same that can suppress excessive soldering and dripping.
[0006]
[Means for Solving the Problems and Effects of the Invention]
In order to solve the above problems, a semiconductor device of the present invention includes a semiconductor element, a first heat radiating portion provided on one side surface of the semiconductor element to dissipate heat generated by the semiconductor element, and the first heat radiating portion. A semiconductor device comprising a second heat dissipating part provided substantially parallel to the other side of the semiconductor element,
The first and second heat dissipating portions each have a heat dissipating surface opposite to the side facing the semiconductor element, and a solder injection hole for bonding is provided in at least one of the first and second heat dissipating portions. A solder layer for joining to the semiconductor element is formed on the side opposite to the heat radiating surface by solder supplied from the heat radiating surface.
[0007]
With the above configuration, the supply of solder makes use of the property that the solder tends to enter into a narrow space due to the capillary phenomenon of the solder itself. ) And can solve the problem caused by dripping of solder.
[0008]
In the present invention, the conductor part is integrally formed so as to protrude to the side of the second heat radiating part facing the semiconductor element, and the conductor part has a shape smaller than the outer periphery of the semiconductor element. A solder injection hole for joining is formed through the portion, and a solder layer for joining the semiconductor element and the conductor portion is formed by the solder supplied from the heat radiation surface side of the injection hole. To do.
[0009]
With the above configuration, when the second heat radiating portion and the conductor portion are integrally formed, an appropriate amount of solder is supplied to the portion between the semiconductor element and the conductor portion through the injection hole, and excessive solder can be eliminated. The reliability of the apparatus can be improved.
[0010]
Furthermore, the present invention provides a semiconductor element, a first heat radiating plate provided on one side surface of the semiconductor element to dissipate heat generated by the semiconductor element, a conductor portion provided on the other side surface of the semiconductor element, A semiconductor device comprising a second heat radiating plate provided substantially parallel to the first heat radiating plate on a side opposite to the side facing the semiconductor element of the conductor portion,
The first heat radiating plate has a heat radiating surface opposite to the side facing the semiconductor element, and the second heat radiating plate has a heat radiating surface opposite to the side facing the conductor portion. A solder injection hole for bonding is provided in at least one, and a solder layer and / or a conductor for bonding to the semiconductor element is provided on the side opposite to the heat dissipation surface by solder supplied from the heat dissipation surface side of the injection hole. A solder layer is formed for joining the two layers.
[0011]
With the above configuration, when the conductor portion and the second heat radiating plate are provided separately, the solder supplied from the injection hole is supplied in an appropriate amount to the narrowly spaced portion of the joint, thereby eliminating excessive solder. Therefore, it is possible to join the solder as much as possible.
[0012]
The present invention also includes a semiconductor element, a first heat radiating plate provided on one side surface of the semiconductor element to dissipate heat generated by the semiconductor element, a conductor portion provided on the other side surface of the semiconductor element, A semiconductor device comprising a second heat radiating plate provided substantially parallel to the first heat radiating plate on the opposite side of the conductor portion facing the semiconductor element,
A solder escape groove is formed on the side of the second heat radiating plate facing the conductor, corresponding to the outer periphery of the conductor.
[0013]
With the above configuration, when soldering is performed by supplying a solder foil having a predetermined thickness between the second heat radiating plate and the conductor portion, the solder escape groove is provided. The portion protruding by the variation can be released into the groove, and the variation in the amount of solder can be absorbed to prevent the solder from dripping as much as possible.
[0014]
More specifically, the first heat radiating plate has a heat radiating surface opposite to the side facing the semiconductor element, and the second heat radiating plate has a heat radiating surface opposite to the side facing the conductor portion. In addition, a solder injection hole for joining is provided in at least the second heat radiating plate of the second heat radiating plate, and solder supplied from the heat radiating surface side of the injection hole is connected to the semiconductor element on the side opposite to the heat radiating surface side. And a solder layer for joining to at least the conductor portion of the solder layer for joining to the conductor portion and a groove for escaping the solder in the second heat radiating plate provided with solder injection holes. In addition to the effect of supplying an appropriate amount of solder between the conductor part and the second heat sink, even if excessive solder occurs, it is absorbed into the groove for solder escape, further reducing the drooping of the solder as much as possible. Can be eliminated.
[0015]
Further, the present invention provides a process in which a semiconductor element is joined on a first heat radiation part for heat radiation of a semiconductor element, and a conductor part is integrally formed on a surface opposite to the heat radiation surface of the second heat radiation part. Solder formed in advance through the second heat dissipating part and the conductor part, arranged in parallel with the first heat dissipating part at a predetermined interval so that the conductor part faces the semiconductor element. Solder is supplied from the heat radiation surface side of the second heat radiation part of the injection hole, and the semiconductor element and the conductor part are joined.
[0016]
By manufacturing in this way, an appropriate amount of solder is supplied to the narrowly spaced portion of the joint portion between the semiconductor element and the conductor portion of the second heat radiating portion, and joining with as little solder dripping as possible is possible. is there.
[0017]
Furthermore, the present invention provides a semiconductor element on a first heat dissipation plate for heat dissipation of the semiconductor element, a step of bonding a conductor portion on the semiconductor element, and a solder injection hole formed in advance. The
[0018]
By manufacturing in this way, an appropriate amount of solder is supplied to the joint portion between the conductor portion and the second heat radiating plate, so that the solder droop can be eliminated as much as possible, and the reliability of the semiconductor device is improved. Can be realized.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to examples shown in the drawings. FIG. 1 is a longitudinal sectional view showing an example of a semiconductor device according to the present invention. The semiconductor device 1 includes a semiconductor element (for example, an IGBT (insulated gate bipolar transistor) element) 2 having, for example, a rectangular shape or a rectangular shape (hereinafter referred to as a rectangular shape), and a
[0020]
The C-surface heat
[0021]
An electrode (not shown) of the
[0022]
The E surface
[0023]
The semiconductor device 1 is joined to the
[0024]
Next, a method for manufacturing the semiconductor device 1 shown in FIG. 2 will be described. In step S1, the
[0025]
Next, in step S2, the
[0026]
In step S3, the E-surface heat
[0027]
In addition, when solder protrudes in the
[0028]
Thereafter, in step S4, the semiconductor device 1 is set in a mold die (not shown), and a thermosetting resin (for example, epoxy resin) is injected and cured. The semiconductor device 1 is sealed with a
[0029]
Next, FIG. 10 shows another embodiment of the present invention. A chamfered
[0030]
In addition, you may form the E surface
[0031]
FIG. 4 shows a method for manufacturing the semiconductor device of the embodiment of FIG. In step R1, the
[0032]
In addition, although the
[0033]
Next, FIG. 5 shows another embodiment of the present invention. In this example, a
[0034]
The
[0035]
The embodiment in which the
[0036]
FIG. 6 shows a method of manufacturing a semiconductor device in the embodiment of FIG. Steps Q1 and Q2 are the same as S1 and S2 of FIG. 2, and the C-side heat
[0037]
In the above description, the solder injection hole is in the form of a stepped hole as shown in FIG. 7A. In addition to this, as shown in FIG. A
[Brief description of the drawings]
FIG. 1 is a longitudinal sectional view showing an example of a semiconductor device of the present invention.
2 is an explanatory view showing a manufacturing method of the semiconductor device shown in FIG. 1; FIG.
3 is a longitudinal sectional view showing another embodiment of FIG. 1. FIG.
4 is an explanatory view showing a manufacturing method of the semiconductor device shown in FIG. 3; FIG.
FIG. 5 is a longitudinal sectional view showing another embodiment of the semiconductor device of the present invention.
6 is an explanatory view showing a manufacturing method of the semiconductor device shown in FIG. 5;
FIG. 7 is a sectional view showing another embodiment of a solder injection hole according to the present invention.
FIG. 8 is an explanatory view showing another embodiment of a solder relief groove according to the present invention.
FIG. 9 is an explanatory view showing another embodiment of the semiconductor device of the present invention.
FIG. 10 is a longitudinal sectional view showing another embodiment of the semiconductor device of the invention.
FIG. 11 is a longitudinal sectional view showing another embodiment of the semiconductor device of the invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1
Claims (7)
前記第1および第2の放熱部はそれぞれ前記半導体素子に面した側と反対側を放熱面とし、前記第1および第2の放熱部の少なくとも1つに接合用のはんだ注入孔を設け、この注入孔の放熱面側から供給されるはんだにより前記放熱面側とは反対側に前記半導体素子との接合のためのはんだ層が形成されることを特徴とする半導体装置。A semiconductor element, a first heat radiating portion provided on one side surface of the semiconductor element to dissipate heat generated by the semiconductor element, and provided on the other side surface of the semiconductor element substantially parallel to the first heat radiating portion. A semiconductor device comprising a second heat dissipating part,
The first and second heat radiating portions each have a heat radiating surface opposite to the side facing the semiconductor element, and at least one of the first and second heat radiating portions is provided with a solder injection hole for joining, A semiconductor device, wherein a solder layer for joining to the semiconductor element is formed on the opposite side of the heat dissipation surface by solder supplied from the heat dissipation surface side of the injection hole.
前記第1の放熱板は前記半導体素子に面した側と反対側を放熱面とし、かつ第2の放熱板は前記導体部と面した側と反対側を放熱面とし、前記第1および第2の放熱板の少なくとも1つに接合用のはんだ注入孔を設け、この注入孔の放熱面側から供給されるはんだにより前記放熱面側とは反対側に前記半導体素子との接合のためのはんだ層および/または導体部との接合のためのはんだ層が形成されることを特徴とする半導体装置。A semiconductor element; a first heat dissipating plate provided on one side of the semiconductor element to dissipate heat generated by the semiconductor element; a conductor provided on the other side of the semiconductor element; and the semiconductor of the conductor A semiconductor device comprising a second heat radiating plate provided substantially parallel to the first heat radiating plate on the side opposite to the side facing the element,
The first heat radiating plate has a heat radiating surface opposite to the side facing the semiconductor element, and the second heat radiating plate has a heat radiating surface opposite to the side facing the conductor portion. A solder injection hole for joining is provided in at least one of the heat radiating plates, and a solder layer for joining the semiconductor element on the side opposite to the heat radiating surface side by solder supplied from the heat radiating surface side of the injection hole And / or a solder layer for bonding to the conductor portion.
前記第2の放熱板の前記導体部に面した側に、導体部の外周囲に対応してはんだ逃げ用の溝が形成されたことを特徴とする半導体装置。A semiconductor element; a first heat dissipating plate provided on one side of the semiconductor element to dissipate heat generated by the semiconductor element; a conductor provided on the other side of the semiconductor element; and the semiconductor of the conductor A semiconductor device comprising a second heat radiating plate provided substantially parallel to the first heat radiating plate on the side opposite to the side facing the element,
A solder escape groove is formed on the side of the second heat radiating plate facing the conductor, corresponding to the outer periphery of the conductor.
第2の放熱部の放熱面とは反対側の面に導体部が一体形成され、前記半導体素子の上方に前記導体部が対面するように所定間隔を保った状態で前記第1の放熱部と略平行に配置され、予め第2の放熱部と導体部を貫通して形成されたはんだ注入孔の前記第2の放熱部の放熱面側からはんだが供給され、前記半導体素子と前記導体部が接合される工程と、
を含む半導体装置の製造方法。A step of joining the semiconductor element on the first heat radiation part for heat radiation of the semiconductor element;
A conductor portion is integrally formed on a surface of the second heat radiating portion opposite to the heat radiating surface, and the first heat radiating portion and the first heat radiating portion are kept at a predetermined interval so that the conductor portion faces above the semiconductor element. Solder is supplied from the heat radiating surface side of the second heat radiating portion of the solder injection hole which is arranged substantially in parallel and previously penetrates the second heat radiating portion and the conductor portion, and the semiconductor element and the conductor portion are Joining steps;
A method of manufacturing a semiconductor device including:
予め形成されたはんだ注入孔を有する第2の放熱板が前記導体部の上方に所定間隔を保った状態で前記第1の放熱板と略平行に配置され、前記注入孔の前記第2の放熱板の放熱面側からはんだが供給され、前記導体部と前記第2の放熱板が接合される工程と、
を含む半導体装置の製造方法。A semiconductor element on a first heat dissipation plate for heat dissipation of the semiconductor element, and a step of bonding a conductor portion on the semiconductor element;
A second heat radiating plate having a solder injection hole formed in advance is arranged substantially parallel to the first heat radiating plate in a state of maintaining a predetermined distance above the conductor portion, and the second heat radiating of the injection hole. Solder is supplied from the heat dissipation surface side of the plate, and the conductor portion and the second heat dissipation plate are joined;
A method of manufacturing a semiconductor device including:
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