JP4280686B2 - 処理方法 - Google Patents

処理方法 Download PDF

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Publication number
JP4280686B2
JP4280686B2 JP2004194233A JP2004194233A JP4280686B2 JP 4280686 B2 JP4280686 B2 JP 4280686B2 JP 2004194233 A JP2004194233 A JP 2004194233A JP 2004194233 A JP2004194233 A JP 2004194233A JP 4280686 B2 JP4280686 B2 JP 4280686B2
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JP
Japan
Prior art keywords
plasma
processed
substrate
oxide film
processing method
Prior art date
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Expired - Fee Related
Application number
JP2004194233A
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English (en)
Japanese (ja)
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JP2006019413A5 (https=
JP2006019413A (ja
Inventor
祐介 福地
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2004194233A priority Critical patent/JP4280686B2/ja
Priority to US11/165,505 priority patent/US20060003603A1/en
Publication of JP2006019413A publication Critical patent/JP2006019413A/ja
Publication of JP2006019413A5 publication Critical patent/JP2006019413A5/ja
Application granted granted Critical
Publication of JP4280686B2 publication Critical patent/JP4280686B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01342—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
JP2004194233A 2004-06-30 2004-06-30 処理方法 Expired - Fee Related JP4280686B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004194233A JP4280686B2 (ja) 2004-06-30 2004-06-30 処理方法
US11/165,505 US20060003603A1 (en) 2004-06-30 2005-06-24 Method and apparatus for processing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004194233A JP4280686B2 (ja) 2004-06-30 2004-06-30 処理方法

Publications (3)

Publication Number Publication Date
JP2006019413A JP2006019413A (ja) 2006-01-19
JP2006019413A5 JP2006019413A5 (https=) 2007-08-09
JP4280686B2 true JP4280686B2 (ja) 2009-06-17

Family

ID=35514578

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004194233A Expired - Fee Related JP4280686B2 (ja) 2004-06-30 2004-06-30 処理方法

Country Status (2)

Country Link
US (1) US20060003603A1 (https=)
JP (1) JP4280686B2 (https=)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
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US20040025791A1 (en) * 2002-08-09 2004-02-12 Applied Materials, Inc. Etch chamber with dual frequency biasing sources and a single frequency plasma generating source
US7163877B2 (en) * 2004-08-18 2007-01-16 Tokyo Electron Limited Method and system for modifying a gate dielectric stack containing a high-k layer using plasma processing
US7695633B2 (en) * 2005-10-18 2010-04-13 Applied Materials, Inc. Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor
US7727413B2 (en) * 2006-04-24 2010-06-01 Applied Materials, Inc. Dual plasma source process using a variable frequency capacitively coupled source to control plasma ion density
US20070246443A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Process using combined capacitively and inductively coupled plasma process for controlling plasma ion dissociation
US7645357B2 (en) * 2006-04-24 2010-01-12 Applied Materials, Inc. Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency
US20070246161A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Plasma reactor apparatus with a toroidal plasma source and a VHF capacitively coupled plasma source with variable frequency
US7780864B2 (en) * 2006-04-24 2010-08-24 Applied Materials, Inc. Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion radial distribution
US20070246162A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Plasma reactor apparatus with an inductive plasma source and a VHF capacitively coupled plasma source with variable frequency
US20070245960A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion density
US20070245961A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Dual plasma source process using a variable frequency capacitively coupled source for controlling plasma ion dissociation
US20070246163A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Plasma reactor apparatus with independent capacitive and inductive plasma sources
US20070245958A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Dual plasma source process using a variable frequency capacitively coupled source for controlling ion radial distribution
WO2008021501A2 (en) * 2006-08-18 2008-02-21 Piero Sferlazzo Apparatus and method for ultra-shallow implantation in a semiconductor device
US7851710B2 (en) * 2006-09-05 2010-12-14 Twinhead International Corp. Waterproof and dustproof structure
JP5089121B2 (ja) * 2006-09-29 2012-12-05 東京エレクトロン株式会社 シリコン酸化膜の形成方法およびプラズマ処理装置
US8012822B2 (en) * 2007-12-27 2011-09-06 Canon Kabushiki Kaisha Process for forming dielectric films
JP2011071353A (ja) * 2009-09-25 2011-04-07 Hitachi Kokusai Electric Inc 半導体装置の製造方法
DE102010056020B4 (de) * 2009-12-23 2021-03-18 Wilhelm Beckmann Verfahren und Vorrichtung zum Ausbilden einer dielektrischen Schicht auf einem Substrat
DE102011100024A1 (de) * 2011-04-29 2012-10-31 Centrotherm Thermal Solutions Gmbh & Co. Kg Verfahren zum ausbilden einer schicht auf einem substrat
DE102011119013B4 (de) 2011-11-21 2022-11-03 Hq-Dielectrics Gmbh Verfahren zum ausbilden einer dielektrischen schicht auf einem substrat
US9941126B2 (en) * 2013-06-19 2018-04-10 Tokyo Electron Limited Microwave plasma device
US9887277B2 (en) * 2015-01-23 2018-02-06 Applied Materials, Inc. Plasma treatment on metal-oxide TFT
JP6534263B2 (ja) * 2015-02-05 2019-06-26 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2016225573A (ja) * 2015-06-03 2016-12-28 株式会社東芝 基板処理装置および基板処理方法
IL273146B2 (en) * 2017-09-14 2025-04-01 Versum Mat Us Llc Compositions and methods for depositing layers containing silicone
CN108666206B (zh) * 2018-05-25 2019-08-16 中国科学院微电子研究所 基于两步微波等离子体氧化的碳化硅氧化方法
CN108766887B (zh) 2018-05-25 2019-07-30 中国科学院微电子研究所 基于两步微波等离子体氧化的凹槽mosfet器件的制造方法
US11972943B2 (en) * 2019-09-20 2024-04-30 Applied Materials, Inc. Methods and apparatus for depositing dielectric material
US20240355906A1 (en) * 2023-04-20 2024-10-24 Taiwan Semiconductor Manufacturing Co., Ltd. Sti loss mitigation by radical oxidation treatment

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4974543A (en) * 1986-02-28 1990-12-04 Xerox Corporation Apparatus for amorphous silicon film
KR930004115B1 (ko) * 1988-10-31 1993-05-20 후지쓰 가부시끼가이샤 애싱(ashing)처리방법 및 장치
JP2918860B2 (ja) * 1997-01-20 1999-07-12 日本ピラー工業株式会社 鏡面体
US6287988B1 (en) * 1997-03-18 2001-09-11 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method, semiconductor device manufacturing apparatus and semiconductor device
US6800512B1 (en) * 1999-09-16 2004-10-05 Matsushita Electric Industrial Co., Ltd. Method of forming insulating film and method of fabricating semiconductor device
WO2002059956A1 (en) * 2001-01-25 2002-08-01 Tokyo Electron Limited Method of producing electronic device material

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Publication number Publication date
US20060003603A1 (en) 2006-01-05
JP2006019413A (ja) 2006-01-19

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