JP4254540B2 - 多層セラミック基板および複合電子部品 - Google Patents
多層セラミック基板および複合電子部品 Download PDFInfo
- Publication number
- JP4254540B2 JP4254540B2 JP2004000110A JP2004000110A JP4254540B2 JP 4254540 B2 JP4254540 B2 JP 4254540B2 JP 2004000110 A JP2004000110 A JP 2004000110A JP 2004000110 A JP2004000110 A JP 2004000110A JP 4254540 B2 JP4254540 B2 JP 4254540B2
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- Prior art keywords
- cavity
- bonding
- electrode
- ceramic substrate
- multilayer ceramic
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000919 ceramic Substances 0.000 title claims abstract description 113
- 239000000758 substrate Substances 0.000 title claims description 60
- 239000002131 composite material Substances 0.000 title claims description 21
- 230000002093 peripheral effect Effects 0.000 claims abstract description 17
- 239000000203 mixture Substances 0.000 claims description 10
- 229910010293 ceramic material Inorganic materials 0.000 claims description 7
- 238000000034 method Methods 0.000 abstract description 8
- 230000008569 process Effects 0.000 abstract description 6
- 239000004020 conductor Substances 0.000 description 10
- 239000000843 powder Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000002776 aggregation Effects 0.000 description 4
- 238000004220 aggregation Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000007665 sagging Methods 0.000 description 4
- 230000008602 contraction Effects 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
Description
22,22a,22b 複合電子部品
23 主面
24 セラミック層
25 開口
26,26a キャビティ
27,27a 周壁部
28 段部
29 段部の主面側に向く面
30 ボンディング電極
33 搭載部品
35 ワイヤ
36,36a,36b ダミー電極
Claims (8)
- 主面方向に延びる複数のセラミック層を積層した構造を有し、前記主面側に開口を向けた状態でキャビティが設けられ、前記キャビティを規定する周壁部における前記主面側に向く面上には、ワイヤボンディングのための複数のボンディング電極が前記キャビティを取り囲むように分布した状態で設けられている、多層セラミック基板であって、
前記ボンディング電極に対して前記セラミック層を介して対向するように、ダミー電極が設けられ、前記ダミー電極は、他の電気的要素には電気的に接続されない状態にあり、かつ、前記周壁部に位置する前記セラミック層間の特定の界面に沿いながら前記キャビティを取り囲むように延びるとともに、少なくともワイヤボンディング位置およびその周囲を含むように形成されている、多層セラミック基板。 - 主面方向に延びる複数のセラミック層を積層した構造を有し、前記主面側に開口を向けた状態でキャビティが設けられ、前記キャビティを規定する周壁部における前記主面側に向く面上には、ワイヤボンディングのための複数のボンディング電極が前記キャビティを取り囲むように分布した状態で設けられている、多層セラミック基板であって、
前記ボンディング電極に対して前記セラミック層を介して対向するように、ダミー電極が設けられ、前記ダミー電極は、他の電気的要素には電気的に接続されない状態にあり、かつ、前記周壁部に位置する前記セラミック層間の特定の界面に沿いながら前記キャビティを取り囲むように延び、
前記ダミー電極と前記ボンディング電極とは、各々の組成が互いに異なり、
前記ダミー電極には、前記セラミック層に含まれるセラミック材料と実質的に同じ組成のセラミック材料が含有される、多層セラミック基板。 - 主面方向に延びる複数のセラミック層を積層した構造を有し、前記主面側に開口を向けた状態でキャビティが設けられ、前記キャビティを規定する周壁部における前記主面側に向く面上には、ワイヤボンディングのための複数のボンディング電極が前記キャビティを取り囲むように分布した状態で設けられている、多層セラミック基板であって、
前記ボンディング電極に対して前記セラミック層を介して対向するように、ダミー電極が設けられ、前記ダミー電極は、他の電気的要素には電気的に接続されない状態にあり、かつ、前記周壁部に位置する前記セラミック層間の特定の界面に沿いながら前記キャビティを取り囲むように延び、
前記ダミー電極の厚みは、前記ボンディング電極の厚みより厚くされる、多層セラミック基板。 - 前記ダミー電極は、前記キャビティを取り囲む枠状に延びている、請求項1ないし3のいずれかに記載の多層セラミック基板。
- 前記キャビティは、前記周壁部において段部を形成し、前記ボンディング電極は、前記段部における前記主面側に向く面上に設けられ、前記ダミー電極は、前記段部を形成する前記セラミック層間の特定の界面に沿って延びている、請求項1ないし4のいずれかに記載の多層セラミック基板。
- 前記ボンディング電極は、前記主面上に設けられる、請求項1ないし4のいずれかに記載の多層セラミック基板。
- 前記ダミー電極は、前記セラミック層間の複数の界面にそれぞれ沿って形成される、請求項1ないし6のいずれかに記載の多層セラミック基板。
- 請求項1ないし7のいずれかに記載の多層セラミック基板と、前記ボンディング電極を用いてワイヤボンディングされた状態で前記キャビティ内に収容された搭載部品とを備える、複合電子部品。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004000110A JP4254540B2 (ja) | 2004-01-05 | 2004-01-05 | 多層セラミック基板および複合電子部品 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004000110A JP4254540B2 (ja) | 2004-01-05 | 2004-01-05 | 多層セラミック基板および複合電子部品 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005197333A JP2005197333A (ja) | 2005-07-21 |
JP4254540B2 true JP4254540B2 (ja) | 2009-04-15 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2004000110A Expired - Lifetime JP4254540B2 (ja) | 2004-01-05 | 2004-01-05 | 多層セラミック基板および複合電子部品 |
Country Status (1)
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JP (1) | JP4254540B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6384179B2 (ja) * | 2014-07-28 | 2018-09-05 | 株式会社デンソー | 電子装置 |
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2004
- 2004-01-05 JP JP2004000110A patent/JP4254540B2/ja not_active Expired - Lifetime
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JP2005197333A (ja) | 2005-07-21 |
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