JP4244315B2 - レジストパターン形成用材料 - Google Patents

レジストパターン形成用材料 Download PDF

Info

Publication number
JP4244315B2
JP4244315B2 JP2003396335A JP2003396335A JP4244315B2 JP 4244315 B2 JP4244315 B2 JP 4244315B2 JP 2003396335 A JP2003396335 A JP 2003396335A JP 2003396335 A JP2003396335 A JP 2003396335A JP 4244315 B2 JP4244315 B2 JP 4244315B2
Authority
JP
Japan
Prior art keywords
mol
component
resist pattern
forming material
pattern forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003396335A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004341479A5 (enExample
JP2004341479A (ja
Inventor
拓 平山
知孝 山田
大助 川名
弘毅 田村
和史 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP2003396335A priority Critical patent/JP4244315B2/ja
Publication of JP2004341479A publication Critical patent/JP2004341479A/ja
Publication of JP2004341479A5 publication Critical patent/JP2004341479A5/ja
Application granted granted Critical
Publication of JP4244315B2 publication Critical patent/JP4244315B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2003396335A 2002-12-02 2003-11-26 レジストパターン形成用材料 Expired - Fee Related JP4244315B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003396335A JP4244315B2 (ja) 2002-12-02 2003-11-26 レジストパターン形成用材料

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002382898 2002-12-02
JP2003116164 2003-04-21
JP2003396335A JP4244315B2 (ja) 2002-12-02 2003-11-26 レジストパターン形成用材料

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005175396A Division JP4676256B2 (ja) 2002-12-02 2005-06-15 新規なラダー型シリコーン共重合体

Publications (3)

Publication Number Publication Date
JP2004341479A JP2004341479A (ja) 2004-12-02
JP2004341479A5 JP2004341479A5 (enExample) 2006-04-27
JP4244315B2 true JP4244315B2 (ja) 2009-03-25

Family

ID=33545040

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003396335A Expired - Fee Related JP4244315B2 (ja) 2002-12-02 2003-11-26 レジストパターン形成用材料

Country Status (1)

Country Link
JP (1) JP4244315B2 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4430986B2 (ja) * 2003-06-03 2010-03-10 信越化学工業株式会社 反射防止膜材料、これを用いた反射防止膜及びパターン形成方法
JP4700929B2 (ja) * 2003-06-03 2011-06-15 信越化学工業株式会社 反射防止膜材料、これを用いた反射防止膜及びパターン形成方法
JP4294521B2 (ja) 2004-03-19 2009-07-15 東京応化工業株式会社 ネガ型レジスト組成物及びそれを用いたパターン形成方法
JP4491283B2 (ja) * 2004-06-10 2010-06-30 信越化学工業株式会社 反射防止膜形成用組成物を用いたパターン形成方法
WO2006065321A1 (en) * 2004-12-17 2006-06-22 Dow Corning Corporation Method for forming anti-reflective coating
EP1825329B1 (en) * 2004-12-17 2015-04-08 Dow Corning Corporation Method for forming anti-reflective coating
JP5296297B2 (ja) * 2005-04-04 2013-09-25 東レ・ファインケミカル株式会社 縮合多環式炭化水素基を有するシリコーン共重合体及びその製造方法
US7829638B2 (en) * 2005-05-09 2010-11-09 Cheil Industries, Inc. Antireflective hardmask composition and methods for using same
KR100655064B1 (ko) * 2005-05-27 2006-12-06 제일모직주식회사 반사방지성을 갖는 하드마스크 조성물
KR100662542B1 (ko) * 2005-06-17 2006-12-28 제일모직주식회사 반사방지 하드마스크 조성물 및 이를 이용하여 기판 상에패턴화된 재료 형상을 형성시키는 방법
EP1762895B1 (en) * 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
KR100665758B1 (ko) * 2005-09-15 2007-01-09 제일모직주식회사 반사방지성을 갖는 하드마스크 조성물
KR100697979B1 (ko) * 2005-09-26 2007-03-23 제일모직주식회사 반사방지 하드마스크 조성물
US7879526B2 (en) * 2005-12-26 2011-02-01 Cheil Industries, Inc. Hardmask compositions for resist underlayer films
CN101371196B (zh) * 2006-02-13 2012-07-04 陶氏康宁公司 抗反射涂料
JP4548616B2 (ja) 2006-05-15 2010-09-22 信越化学工業株式会社 熱酸発生剤及びこれを含むレジスト下層膜材料、並びにこのレジスト下層膜材料を用いたパターン形成方法
KR100888613B1 (ko) * 2007-08-10 2009-03-12 제일모직주식회사 포토레지스트 하층막용 하드마스크 조성물 및 이를 이용한반도체 집적회로 디바이스의 제조방법
JP4946787B2 (ja) * 2007-10-22 2012-06-06 Ｊｓｒ株式会社 レジスト下層膜用組成物及びその製造方法
JP4813537B2 (ja) 2008-11-07 2011-11-09 信越化学工業株式会社 熱酸発生剤を含有するレジスト下層材料、レジスト下層膜形成基板及びパターン形成方法
TWI416262B (zh) * 2009-03-13 2013-11-21 Jsr Corp A silicon film-forming composition, a silicon-containing film, and a pattern-forming method
KR102307204B1 (ko) * 2012-07-30 2021-10-01 닛산 가가쿠 가부시키가이샤 설폰산오늄염을 함유하는 규소함유 euv 레지스트 하층막 형성 조성물
US11815815B2 (en) * 2014-11-19 2023-11-14 Nissan Chemical Industries, Ltd. Composition for forming silicon-containing resist underlayer film removable by wet process
TWI659991B (zh) * 2015-08-31 2019-05-21 Rohm And Haas Electronic Materials Llc 與外塗佈光致抗蝕劑一起使用的塗料組合物
US11281104B2 (en) 2017-07-06 2022-03-22 Nissan Chemical Corporation Alkaline developer soluable silicon-containing resist underlayer film-forming composition

Also Published As

Publication number Publication date
JP2004341479A (ja) 2004-12-02

Similar Documents

Publication Publication Date Title
JP7050137B2 (ja) ハードマスクおよび充填材料として安定な金属化合物、その組成物、およびその使用方法
KR102861965B1 (ko) 높은 해상도 패터닝을 위한 실라놀-함유 유기-무기 하이브리드 코팅
KR100639862B1 (ko) 반사방지막형성용 조성물
TWI669353B (zh) 金屬硬遮罩組合物及在半導體基板上形成精細圖案之方法
TWI312443B (en) Antireflective film-forming composition, method for manufacturing the same, and antireflective film and pattern formation method using the same
JP2004341479A5 (enExample)
JP2004341479A (ja) 反射防止膜形成用組成物及びそれに用いるラダー型シリコーン共重合体
JP6342998B2 (ja) 可溶性金属酸化物カルボキシレートのスピンオン組成物及びそれらの使用方法
KR20210127712A (ko) 개선된 저장 수명을 갖는, 하드 마스크 및 충전 물질로서 유용한, 무기 산화물 성분 및 알키닐옥시 치환된 스핀-온 탄소 성분을 포함하는 스핀-온 조성물
WO2010143054A1 (en) Spin on organic antireflective coating composition comprising polymer with fused aromatic rings
EP1825330B1 (en) Method for forming anti-reflective coating
EP3394675B1 (en) Materials containing metal oxides, processes for making same, and processes for using same
JP5520440B2 (ja) 有機反射防止膜形成用単量体、重合体及びこれを含む有機組成物
JP2020042260A (ja) レジスト下層膜用組成物およびこれを用いたパターン形成方法
JP7622733B2 (ja) 電子線又は極端紫外線リソグラフィー用レジスト下層膜形成組成物、電子線又は極端紫外線リソグラフィー用レジスト下層膜、及び半導体基板の製造方法
JP4676256B2 (ja) 新規なラダー型シリコーン共重合体
KR101441563B1 (ko) 실리콘을 포함하는 다기능 반사방지막 제조용 열경화성 실리콘 수지 및 이 수지를 사용하여 제조된 반사방지막
CN100543584C (zh) 用于形成抗反射涂层的组合物
TW202447348A (zh) 含矽塗覆組成物、包含其的生產半導體裝置、光學裝置、光學元件以及光學主動裝置的方法、作為添加劑的應用、以及進行圖案化的方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060207

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060313

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080904

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081104

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20081225

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20081226

R150 Certificate of patent or registration of utility model

Ref document number: 4244315

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120116

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130116

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140116

Year of fee payment: 5

LAPS Cancellation because of no payment of annual fees