JP4244315B2 - レジストパターン形成用材料 - Google Patents

レジストパターン形成用材料 Download PDF

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Publication number
JP4244315B2
JP4244315B2 JP2003396335A JP2003396335A JP4244315B2 JP 4244315 B2 JP4244315 B2 JP 4244315B2 JP 2003396335 A JP2003396335 A JP 2003396335A JP 2003396335 A JP2003396335 A JP 2003396335A JP 4244315 B2 JP4244315 B2 JP 4244315B2
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Japan
Prior art keywords
mol
component
resist pattern
forming material
pattern forming
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Expired - Fee Related
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JP2003396335A
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English (en)
Japanese (ja)
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JP2004341479A5 (cg-RX-API-DMAC7.html
JP2004341479A (ja
Inventor
拓 平山
知孝 山田
大助 川名
弘毅 田村
和史 佐藤
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Tokyo Ohka Kogyo Co Ltd
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Tokyo Ohka Kogyo Co Ltd
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Priority to JP2003396335A priority Critical patent/JP4244315B2/ja
Publication of JP2004341479A publication Critical patent/JP2004341479A/ja
Publication of JP2004341479A5 publication Critical patent/JP2004341479A5/ja
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Publication of JP4244315B2 publication Critical patent/JP4244315B2/ja
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  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2003396335A 2002-12-02 2003-11-26 レジストパターン形成用材料 Expired - Fee Related JP4244315B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003396335A JP4244315B2 (ja) 2002-12-02 2003-11-26 レジストパターン形成用材料

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002382898 2002-12-02
JP2003116164 2003-04-21
JP2003396335A JP4244315B2 (ja) 2002-12-02 2003-11-26 レジストパターン形成用材料

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005175396A Division JP4676256B2 (ja) 2002-12-02 2005-06-15 新規なラダー型シリコーン共重合体

Publications (3)

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JP2004341479A JP2004341479A (ja) 2004-12-02
JP2004341479A5 JP2004341479A5 (cg-RX-API-DMAC7.html) 2006-04-27
JP4244315B2 true JP4244315B2 (ja) 2009-03-25

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JP2003396335A Expired - Fee Related JP4244315B2 (ja) 2002-12-02 2003-11-26 レジストパターン形成用材料

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JP (1) JP4244315B2 (cg-RX-API-DMAC7.html)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4700929B2 (ja) * 2003-06-03 2011-06-15 信越化学工業株式会社 反射防止膜材料、これを用いた反射防止膜及びパターン形成方法
JP4430986B2 (ja) * 2003-06-03 2010-03-10 信越化学工業株式会社 反射防止膜材料、これを用いた反射防止膜及びパターン形成方法
JP4294521B2 (ja) 2004-03-19 2009-07-15 東京応化工業株式会社 ネガ型レジスト組成物及びそれを用いたパターン形成方法
JP4491283B2 (ja) * 2004-06-10 2010-06-30 信越化学工業株式会社 反射防止膜形成用組成物を用いたパターン形成方法
WO2006065320A1 (en) * 2004-12-17 2006-06-22 Dow Corning Corporation Method for forming anti-reflective coating
US7833696B2 (en) * 2004-12-17 2010-11-16 Dow Corning Corporation Method for forming anti-reflective coating
JP5296297B2 (ja) 2005-04-04 2013-09-25 東レ・ファインケミカル株式会社 縮合多環式炭化水素基を有するシリコーン共重合体及びその製造方法
US7829638B2 (en) * 2005-05-09 2010-11-09 Cheil Industries, Inc. Antireflective hardmask composition and methods for using same
KR100655064B1 (ko) * 2005-05-27 2006-12-06 제일모직주식회사 반사방지성을 갖는 하드마스크 조성물
KR100662542B1 (ko) * 2005-06-17 2006-12-28 제일모직주식회사 반사방지 하드마스크 조성물 및 이를 이용하여 기판 상에패턴화된 재료 형상을 형성시키는 방법
EP1762895B1 (en) * 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
KR100665758B1 (ko) * 2005-09-15 2007-01-09 제일모직주식회사 반사방지성을 갖는 하드마스크 조성물
KR100697979B1 (ko) * 2005-09-26 2007-03-23 제일모직주식회사 반사방지 하드마스크 조성물
US7879526B2 (en) * 2005-12-26 2011-02-01 Cheil Industries, Inc. Hardmask compositions for resist underlayer films
EP1989593A2 (en) * 2006-02-13 2008-11-12 Dow Corning Corporation Antireflective coating material
JP4548616B2 (ja) 2006-05-15 2010-09-22 信越化学工業株式会社 熱酸発生剤及びこれを含むレジスト下層膜材料、並びにこのレジスト下層膜材料を用いたパターン形成方法
KR100888613B1 (ko) * 2007-08-10 2009-03-12 제일모직주식회사 포토레지스트 하층막용 하드마스크 조성물 및 이를 이용한반도체 집적회로 디바이스의 제조방법
JP4946787B2 (ja) * 2007-10-22 2012-06-06 Ｊｓｒ株式会社 レジスト下層膜用組成物及びその製造方法
JP4813537B2 (ja) 2008-11-07 2011-11-09 信越化学工業株式会社 熱酸発生剤を含有するレジスト下層材料、レジスト下層膜形成基板及びパターン形成方法
TWI416262B (zh) * 2009-03-13 2013-11-21 Jsr Corp A silicon film-forming composition, a silicon-containing film, and a pattern-forming method
CN112947000B (zh) * 2012-07-30 2024-11-29 日产化学工业株式会社 含有磺酸𬭩盐的含硅euv抗蚀剂下层膜形成用组合物
WO2016080217A1 (ja) * 2014-11-19 2016-05-26 日産化学工業株式会社 湿式除去が可能なシリコン含有レジスト下層膜形成組成物
TWI659991B (zh) * 2015-08-31 2019-05-21 Rohm And Haas Electronic Materials Llc 與外塗佈光致抗蝕劑一起使用的塗料組合物
KR102674631B1 (ko) 2017-07-06 2024-06-12 닛산 가가쿠 가부시키가이샤 알칼리성 현상액 가용성 실리콘함유 레지스트 하층막 형성 조성물

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JP2004341479A (ja) 2004-12-02

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