JP4238050B2 - プラズマ処理装置及び処理方法 - Google Patents

プラズマ処理装置及び処理方法 Download PDF

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Publication number
JP4238050B2
JP4238050B2 JP2003056181A JP2003056181A JP4238050B2 JP 4238050 B2 JP4238050 B2 JP 4238050B2 JP 2003056181 A JP2003056181 A JP 2003056181A JP 2003056181 A JP2003056181 A JP 2003056181A JP 4238050 B2 JP4238050 B2 JP 4238050B2
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voltage
plasma
substrate
processing chamber
frequency
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Japanese (ja)
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JP2003332321A (ja
JP2003332321A5 (https=
Inventor
尚輝 安井
誠浩 角屋
仁 田村
成一 渡辺
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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  • Plasma Technology (AREA)
  • Micromachines (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP2003056181A 2001-09-20 2003-03-03 プラズマ処理装置及び処理方法 Expired - Fee Related JP4238050B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003056181A JP4238050B2 (ja) 2001-09-20 2003-03-03 プラズマ処理装置及び処理方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2001286054 2001-09-20
JP2001-286054 2001-09-20
JP2002037580 2002-02-15
JP2002-37580 2002-02-15
JP2003056181A JP4238050B2 (ja) 2001-09-20 2003-03-03 プラズマ処理装置及び処理方法

Related Parent Applications (1)

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JP2002275738A Division JP3898612B2 (ja) 2001-09-20 2002-09-20 プラズマ処理装置及び処理方法

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JP2003332321A JP2003332321A (ja) 2003-11-21
JP2003332321A5 JP2003332321A5 (https=) 2005-10-27
JP4238050B2 true JP4238050B2 (ja) 2009-03-11

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4778715B2 (ja) * 2005-02-24 2011-09-21 株式会社日立ハイテクノロジーズ 半導体の製造方法
JP6045646B2 (ja) * 2010-08-23 2016-12-14 東京エレクトロン株式会社 プラズマエッチング方法
JP2012138581A (ja) * 2012-01-10 2012-07-19 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP5894445B2 (ja) * 2012-01-23 2016-03-30 東京エレクトロン株式会社 エッチング方法及びエッチング装置
KR102201886B1 (ko) * 2013-06-11 2021-01-12 세메스 주식회사 기판 처리 장치 및 플라즈마 발생 방법
CN117293008A (zh) * 2019-08-05 2023-12-26 株式会社日立高新技术 等离子处理装置
CN113936985B (zh) * 2020-07-14 2025-03-11 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
JP7782995B2 (ja) * 2020-11-05 2025-12-09 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN116425268B (zh) * 2023-04-12 2025-05-16 哈尔滨工业大学 一种双频激励调控活性组分的活化水制备装置和方法

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