JP4224374B2 - プラズマ処理装置の処理方法およびプラズマ処理方法 - Google Patents

プラズマ処理装置の処理方法およびプラズマ処理方法 Download PDF

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Publication number
JP4224374B2
JP4224374B2 JP2003345974A JP2003345974A JP4224374B2 JP 4224374 B2 JP4224374 B2 JP 4224374B2 JP 2003345974 A JP2003345974 A JP 2003345974A JP 2003345974 A JP2003345974 A JP 2003345974A JP 4224374 B2 JP4224374 B2 JP 4224374B2
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plasma
wafer
processing method
plasma processing
gas
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Japanese (ja)
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JP2004214609A (ja
JP2004214609A5 (enExample
Inventor
茂 白米
哲郎 小野
直志 板橋
元彦 吉開
敬浩 阿部
隆浩 下村
浩之 橘内
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2003345974A priority Critical patent/JP4224374B2/ja
Priority to US10/791,856 priority patent/US20050072444A1/en
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Publication of JP2004214609A5 publication Critical patent/JP2004214609A5/ja
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  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2003345974A 2002-12-18 2003-10-03 プラズマ処理装置の処理方法およびプラズマ処理方法 Expired - Fee Related JP4224374B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003345974A JP4224374B2 (ja) 2002-12-18 2003-10-03 プラズマ処理装置の処理方法およびプラズマ処理方法
US10/791,856 US20050072444A1 (en) 2003-10-03 2004-03-04 Method for processing plasma processing apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002366789 2002-12-18
JP2003345974A JP4224374B2 (ja) 2002-12-18 2003-10-03 プラズマ処理装置の処理方法およびプラズマ処理方法

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JP2004214609A JP2004214609A (ja) 2004-07-29
JP2004214609A5 JP2004214609A5 (enExample) 2006-04-20
JP4224374B2 true JP4224374B2 (ja) 2009-02-12

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4695362B2 (ja) * 2004-08-16 2011-06-08 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP5098065B2 (ja) * 2005-08-31 2012-12-12 国立大学法人埼玉大学 Ａｌ系超伝導フォトン検出器の製造方法、Ａｌ系超伝導フォトン検出器
JP4828456B2 (ja) * 2007-03-08 2011-11-30 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US20100140222A1 (en) * 2008-12-10 2010-06-10 Sun Jennifer Y Filled polymer composition for etch chamber component
JP2012243958A (ja) * 2011-05-19 2012-12-10 Hitachi High-Technologies Corp プラズマ処理方法
JP6269091B2 (ja) * 2014-01-17 2018-01-31 住友電気工業株式会社 半導体光素子の製造方法
JP6351458B2 (ja) * 2014-09-19 2018-07-04 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6609535B2 (ja) * 2016-09-21 2019-11-20 株式会社日立ハイテクノロジーズ プラズマ処理方法
US20240191348A1 (en) * 2021-07-19 2024-06-13 Hitachi High-Tech Corporation Semiconductor manufacturing apparatus and cleaning method of semiconductor manufacturing apparatus

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