JP4218434B2 - Electronic equipment - Google Patents

Electronic equipment Download PDF

Info

Publication number
JP4218434B2
JP4218434B2 JP2003170185A JP2003170185A JP4218434B2 JP 4218434 B2 JP4218434 B2 JP 4218434B2 JP 2003170185 A JP2003170185 A JP 2003170185A JP 2003170185 A JP2003170185 A JP 2003170185A JP 4218434 B2 JP4218434 B2 JP 4218434B2
Authority
JP
Japan
Prior art keywords
metal
substrate
electronic
core substrate
metal core
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2003170185A
Other languages
Japanese (ja)
Other versions
JP2005005629A (en
Inventor
弘二 佐藤
内山  薫
正英 原田
勇 吉田
志郎 山下
剛秀 横塚
州志 江口
雅彦 浅野
Original Assignee
株式会社日立製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社日立製作所 filed Critical 株式会社日立製作所
Priority to JP2003170185A priority Critical patent/JP4218434B2/en
Publication of JP2005005629A publication Critical patent/JP2005005629A/en
Application granted granted Critical
Publication of JP4218434B2 publication Critical patent/JP4218434B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0201Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203Cooling of mounted components
    • H05K1/0204Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3677Wire-like or pin-like cooling fins or heat sinks
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09009Substrate related
    • H05K2201/09054Raised area or protrusion of metal substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10227Other objects, e.g. metallic pieces
    • H05K2201/10416Metallic blocks or heatsinks completely inserted in a PCB
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621Components characterised by their electrical contacts
    • H05K2201/10734Ball grid array [BGA]; Bump grid array
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0058Laminating printed circuit boards onto other substrates, e.g. metallic substrates
    • H05K3/0061Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an electronic device that requires a high heat dissipation structure represented by an engine control unit.
[0002]
[Prior art]
Usually, electronic devices are subjected to a thermal cycle test before shipping. In particular, in an in-vehicle electronic control device such as an ECU, the temperature in the vehicle body changes greatly due to the on / off of the engine or a change in environmental temperature, and a thermal cycle in a wide temperature range (usually −40 degrees to 120 degrees: automotive electronics). Specifications that can withstand the JASOD001 standard for environmental testing of equipment are required. Nowadays, since the ECU tends to be arranged closer to the engine, the upper limit specification of this temperature range tends to be higher. Therefore, the in-vehicle electronic device is required to have higher heat dissipation than a general electronic device.
[0003]
In recent years, an electronic device such as a semiconductor device is mounted on an interposer board (intermediate circuit board), and a structure in which the interposer board is mounted on a mother board (circuit board) by solder bumps has been increasingly used. .
[0004]
Since it has a structure in which two boards, a motherboard and an interposer board, are sandwiched between an electronic component that is a heat source and a housing that is a heat dissipation destination, heat dissipation is low compared to a structure in which electronic components are directly mounted on a conventional motherboard. Become.
[0005]
As a technique for improving heat dissipation, a metal core substrate in which a wiring layer and an insulating layer are formed on both surfaces of a metal plate, which is a core material, is used as an interposer substrate, and a resin layer and a part of the wiring layer on both surfaces of the interposer substrate are used. There is a structure in which a semiconductor device which is an electronic component is directly mounted on the upper surface side of the core material by a face-up method, and the lower surface side of the core material and the upper surface side of the motherboard are connected by solder and plating. (Patent Document 1, FIG. 34).
[0006]
[Patent Document 1]
JP2003-46022
[0007]
[Problems to be solved by the invention]
However, in the above conventional technology, attention has been paid to heat radiation between the interposer board and the motherboard mounted in the housing, but it is fully studied to improve the heat radiation performance of the entire electronic device including the housing. Was not.
[0008]
That is, an object of the present invention is to improve heat dissipation of an electronic device.
[0009]
[Means for Solving the Problems]
The present invention includes a metal core substrate, a resin layer, and a circuit layer, each of which is composed of a metal plate and insulating resin layers formed on both sides of the metal plate, and an electronic component is mounted on one of the surfaces. The first surface of the circuit board is opposite to the other surface of the metal core substrate, and the metal core substrate is bonded to the other surface, and the circuit substrate is the second surface opposite to the first surface. Each of the both surfaces of the metal core substrate is formed with an opening of the insulating resin layer that exposes the metal plate, and the one surface of the metal core substrate. The electronic component is die-bonded to the metal plate exposed from the opening, and the circuit board is provided with a through-hole extending between the other surface of the metal core substrate and the housing. In the circuit A circuit block formed on the insulating resin layer on the other surface of the metal core substrate is bonded to a metal block that is molded separately from the plate and extends to the other surface of the metal core substrate through the through hole. The electronic device is characterized in that the circuit layer and the metal plate exposed at the opening on the other surface of the metal core substrate and the metal block are respectively bonded by solder.
[0021]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 2 shows a perspective view of an engine control unit (ECU) module, which is an example of an electronic device, with a lid removed.
[0022]
The ECU module is mounted on the aluminum casing 27 by being electrically connected to the aluminum casing 27 (the lid is not shown) in which a connector for inputting / outputting signals from / to the outside is formed, and the connector and wiring. A mother board (circuit board) 15, a semiconductor package 41 mounted on the mother board 15, and a silicone gel filling the inside of the housing 27 are provided.
[0023]
Silicone gel may be omitted, but in this example, it is filled from the viewpoint of improving reliability.
[0024]
FIG. 1 is a cross-sectional view of FIG.
[0025]
The semiconductor package 41 is a circuit board (interposer board) 11 having a resin layer and a circuit layer 13, and is die-bonded to the interposer board 11 with an adhesive 5, and is electrically connected to the circuit layer 13 by a bonding wire 3. A semiconductor device 1 that is a power supply IC, and a resin 7 that molds the interposer substrate 11 so as to seal the semiconductor device 1, the bonding wire 3, and the circuit layer are provided. The adhesive 5 used for die bonding is a silver paste containing silver as a filler in a resin.
[0026]
The mother board 15 is a circuit board including a resin layer and a circuit layer 13, and an electronic component 21 is mounted with solder 23 and a semiconductor package 41 is mounted with BGA (ball grid array) solder 19.
[0027]
The mother board 15 includes a through hole in a region overlapping with a region where the semiconductor device 1 is mounted on the interposer substrate.
[0028]
The casing 27 includes a protrusion 29, and this protrusion is fitted into the through hole of the mother board 15, and the protrusion 29 and the interposer substrate 11 are fixed with an adhesive 31. Further, locations other than the protrusions 29 are bonded to the mother board 15 with an adhesive 25. For the adhesive 31, a resin adhesive 31 in which a silver filler is contained in silicone is used, and for the adhesive 25, a silver paste is used.
[0029]
In this way, by connecting the protrusions 29 of the housing 27 to the interposer substrate 11 using the through holes of the mother board 15, the heat accumulated in the interposer substrate 11 due to the heat generated by the semiconductor device 1 is highly thermally conductive. Since it can escape to a high housing | casing with the short heat dissipation path | route formed with the material, the heat dissipation of an electronic device can be improved.
[0030]
The resin adhesive 31 is used for a resin paste containing a filler having a higher thermal conductivity than a resin such as a metal other than silver or a metal inorganic compound such as alumina, or a solder having a higher thermal conductivity than the resin layer of the circuit board. It can also be changed.
[0031]
In addition, the resin of the resin adhesive 31 can be made of a material other than silicone as long as the adhesiveness can be ensured. In this example, the BGA solder connection caused by the difference in thermal expansion coefficient between the interposer substrate and the mother board is used. In order to suppress thermal fatigue failure of the part, destruction of the silver paste itself, and interface peeling, a silicone resin paste having a Young's modulus smaller than that of the solder material used for the BGA solder connection part is used. The same effect can be obtained with grease and sheet in addition to the silicone resin.
[0032]
Next, a manufacturing process of the ECU module of FIG. 1 will be described.
[0033]
FIG. 3 is a diagram showing a manufacturing process of the ECU module of FIG.
[0034]
First, the manufacturing process of the semiconductor package 41 will be described (FIG. 3A).
[0035]
A 5 mm square semiconductor device 1 is placed face up on the surface of the interposer substrate 11 and die-bonded with solder or silver paste 5. After die bonding, the terminal of the semiconductor device and the pad of the interposer substrate are electrically connected by the bonding wire 3. Next, the electronic component 9 is mounted. This connection method is appropriately selected according to the type of electronic component. Next, in order to improve handleability and reliability, it molds with resin 7. Next, a solder BGA connection pad is formed on the back surface of the package substrate. This pad was formed by nickel plating and further gold plating with a diameter of 0.6 mm and a pitch of 1.27 mm. Further, this pad was formed on the back surface of the position where the semiconductor device 1 was formed, in a region excluding a region slightly larger than the size of the semiconductor device 1. At the same time as forming the pad, a metal layer of about 5 mm square is formed in the removed area. A Sn3Ag0.5Cu solder ball 19 having a diameter of 0.76 mm was mounted on the BGA connection pad and reflowed to form a solder bump. The aluminum casing 27 was formed by machining a projection 29 having a 5 mm square and a height of 2.0 mm by milling.
[0036]
Next, a manufacturing process of the mother board 15 will be described.
[0037]
A resin substrate (printed substrate, thickness: 1.5 mm) is prepared, and a through hole 43 is formed on the substrate by router processing at a desired position (FIG. 3B).
[0038]
Next, joining of the mother board 15 and the semiconductor package 41 will be described.
[0039]
The semiconductor package 41 and the electronic component 21 are aligned and mounted at a predetermined position on the mother board 15, and the solder is melted at 240 ° C. for about 5 minutes and reflow-connected (FIG. 3 (c)). The size of the through hole was 7 mm square. Since the aluminum protrusion 29 is arranged in the through hole 41 of the motherboard, by making the opening portion larger than the size of the aluminum protruding portion, the condition of the alignment accuracy with respect to the housing of the substrate is eased. This is effective as a space for storing a surplus of the adhesive 31 that bonds the package and the aluminum protrusion.
[0040]
Next, a process for bonding a mother board on which an interposer substrate is mounted to an aluminum casing will be described.
[0041]
A silicone paste 25 is applied to a substrate mounting portion of an aluminum housing with a protrusion, and the protrusion has a silver paste 31 containing, as a main component, silicone having a high thermal conductivity and a low Young's modulus, and containing a silver filler. Is applied (FIG. 3 (d)). A mother board (state (C)) having through holes on which components are mounted is mounted on an aluminum case and cured at 150 ° C. for 1 hour. From the hole of the motherboard, the protruding portion 29 formed in the previous aluminum casing protrudes from the substrate surface by about 0.5 mm. Since the solder ball height for electrically connecting the package and the substrate is about 0.4 mm, the substrate thickness is 1.6 mm, and the silicone adhesive thickness is about 0.1 mm, the total is about 2.1 mm. The thickness of the silver paste 31 may be about 0.1 mm.
[0042]
It can be said that the structure of the above aspect has the following characteristics.
[0043]
First, a housing and an electronic substrate bonded to the housing are provided. The electronic substrate is electrically connected to the interposer substrate on which the electronic component is mounted, the interposer substrate substrate, and the electronic substrate. In the electronic apparatus having the first motherboard on the motherboard fixed to the casing, the interposer substrate is fixed to the casing in a space that does not overlap with the motherboard.
[0044]
Such a structure is not affected by the difference in thermal expansion coefficient between the interposer substrate and the mother board, so that stronger fixation can be obtained. By not interposing the motherboard, there are no restrictions on the fixing method and the bonding area can be increased. Therefore, even if a strong impact such as dropping is applied due to the increase in the adhesion area, there is an effect that the disconnection between the interposer substrate and the mother board can be suppressed. Moreover, since heat can be radiated without interposing a mother board, a large heat radiating path leading directly to the housing can be formed.
[0045]
The interposer substrate is preferably fixed to the housing via a member formed separately from the mother board.
[0046]
Conventionally, there is a limit to the shape (area and thickness) that can be formed by plating, etc. However, if it is molded in advance as a separate part, the area and thickness limits do not have to be considered much, and the large area is low cost. It can be fixed. Further, by using a member having a large thermal conductivity coefficient as such a member, a heat radiation path having a large cross-sectional area can be secured.
[0047]
Further, it is preferable that the motherboard has a through hole, and a member formed separately from the motherboard is provided in a space between the interposer substrate and the housing and overlapping the through hole.
[0048]
Thus, by providing the through hole in the mother board, the non-overlapping space between the interposer board and the mother board can be arranged at the center of the mother board. That is, since the heat radiating member can be disposed immediately below the electronic component that is the heat radiating source, the cross-sectional area of the path to the housing can be increased, and the heat dissipation is improved.
[0049]
Of course, from the viewpoint of heat dissipation, it is preferable to use a member having a higher thermal conductivity than the resin layer of the mother board as the above-described member.
[0050]
In a vehicle-mounted electronic device, the above structure is particularly effective because a space in which the interposer substrate and the motherboard overlap is filled with a gel-like insulator.
[0051]
Further, since the member is a projection of the casing in which a part of the casing is molded, a decrease in thermal conductivity due to the adhesive layer used for connection can be prevented, which contributes to an improvement in heat dissipation.
[0052]
Next, another structure different from FIG. 1 will be described.
[0053]
FIG. 4 is a cross-sectional view of the joule that is different from the ECU shown in FIG.
[0054]
The aluminum casing 27 is almost flat on the inner surface side as before. A separately formed aluminum metal block 33 is produced, and this is bonded to the aluminum casing 27 using a silicone adhesive 35 containing a metal filler.
[0055]
According to this embodiment, not only can the fixing strength be improved and the heat dissipation can be improved, but also the restriction on the alignment accuracy of the substrate with respect to the housing can be relaxed. The adhesive 31 is preferably a resin paste containing a powder of silver, other metal having a high thermal conductivity, or a metal inorganic compound such as alumina, or a solder having a higher thermal conductivity in terms of heat dissipation characteristics.
[0056]
In addition, by using a silicone-based resin paste, grease, or sheet with a low Young's modulus as the adhesive, thermal fatigue damage to the BGA solder joint can be mitigated, and damage to the silver paste itself and interface peeling can be mitigated. This is desirable for connection reliability.
[0057]
FIG. 5 is different from the embodiment shown in FIG. 1 in the following points. The substrate constituting the package is a metal core substrate 37, a part of the insulating resin on the front and back surfaces of the metal core substrate is removed, and the chip 1 with high heat generation is bonded to the exposed portion of the core metal with the silver paste 5 by face-up, so as to be electrically connected. Are connected to bonding pads on the package substrate by wire bonding 3. When other components are mounted on the package substrate as necessary and the resin mold 7 is used, the handleability can be improved. The aluminum casing protrusion 33 is bonded to the exposed portion of the core metal on the back surface of the package with a silicone-based silver paste 31. According to this embodiment, since the high heat generating chip and the aluminum housing having a large heat capacity can be connected without the insulating resin layer of the circuit board having a low thermal conductivity, the heat dissipation can be extremely enhanced. Moreover, it is also possible to maintain the insulation between the core metal and the aluminum casing by using either or both of the adhesive portions 31 and 35 as an adhesive containing a non-conductive filler or an adhesive without a filler.
[0058]
FIG. 6 is different from the above-described embodiment in that the connection between the core metal 39 and the aluminum protruding portion 33 is performed by the solder ball 45. The manufacturing process can be simplified by making the heat dissipation part a solder ball connection. Although the total connection area contributing to heat dissipation is reduced, the thermal conductivity of the solder itself is about 10 times larger than that of the silver paste. If the entire silver paste connection portion in the above-described embodiment is connected by solder instead of the solder ball, the heat dissipation is further improved.
[0059]
A manufacturing process for realizing the embodiment shown in FIG. 6 is briefly shown in FIG. 7 and described below.
[0060]
First, a method for manufacturing a package portion will be shown (upper part of FIG. 7C). A metal core substrate 37 is used as the package substrate. The metal core substrate is manufactured by a known method. However, it is necessary to remove the insulating resin portion, which is performed by carbonic acid laser processing. After the desmear treatment, a high heat generation electronic component 1 of about 5 mm square is die-bonded to the surface of the core metal 39 with solder or silver paste 5 face up. Electrical connection is made by wire bonding 3. Furthermore, in order to improve handling property and reliability, it molds with resin 7. A solder BGA connection pad is formed on the back surface of the package substrate. This pad has, for example, a diameter of 0.6 mm and a pitch of 1.27 mm, and is subjected to nickel plating and further gold plating. This BGA pad is not formed on the entire back surface of the substrate, leaving a part of a 5 mm square area for heat dissipation. The above process is also effective for the embodiment shown in FIG. Insulating resin removing portions (bottle portions) having a diameter of 0.6 mm and a pitch of 1.27 mm are formed in this heat radiation region. This counterbore part is formed by the same method as the chip mounting part, that is, by laser processing. If the counterbore part has a diameter substantially the same as that of other BGA pads, the supplied solder ball size can be made the same, and process management becomes easy. Moreover, heat dissipation can be improved by decreasing the pitch of the spot facing portion to increase the number or increasing the area of the spot facing portion. The Sn3Ag0.5Cu solder balls 19 and 45 having a diameter of 0.76 mm are mounted on the BGA connection pad and the heat sinking counterbore, respectively, and reflowed to form solder.
[0061]
A projection 33 having a 5 mm square and a height of 1.7 mm is formed at a desired position on the ECU aluminum casing. This protrusion is formed by the method as in the previous embodiment. A metallization for solder connection, that is, nickel having a thickness of 5 microns, or gold plating having a thickness of 0.5 microns is formed on the protrusion so as to match the solder pattern for heat dissipation on the back surface of the package. This metallization may be anything as long as it reacts with solder, and the formation method may be anything such as sputtering.
[0062]
The substrate is a resin substrate (printed substrate, thickness: 1.5 mm) by a known technique, and holes are formed in this substrate by router processing at a desired position. The hole size is 6 mm square. By making it larger than the size of the aluminum protruding portion, it is possible to relax restrictions on the alignment accuracy of the substrate with respect to the housing.
[0063]
In this embodiment, a silicone adhesive is applied to the substrate mounting portion of the aluminum housing with the protrusions, and the substrate with the holes is mounted and cured at 150 ° C. for 1 hour. From the hole of the substrate, the protruding portion formed in the previous aluminum casing protrudes about 0.2 mm from the surface of the substrate.
[0064]
The previous package and other electronic components are aligned and mounted at predetermined positions on the substrate, the solder is melted at 240 ° C. for about 5 minutes, and all the solder connection portions are simultaneously reflow-connected.
[0065]
The metal protrusions and substrate openings for heat dissipation are the same size as the mounted chip in the above embodiment, but heat dissipation can be further improved if they are larger than the chip size. Further, if the metal protrusion and the substrate opening are smaller than the chip size, the wiring area of the substrate increases, and the substrate size can be reduced. In addition, the horizontal cross-sectional shape of the heat dissipating part does not necessarily need to be square or rectangular, and if the shape is round or rounded, the surface tension plays an important role in alignment. It is possible to improve reliability by avoiding stress concentration.
[0066]
FIG. 8 shows the structure of another electronic device.
[0067]
A difference from the electronic device of FIG. 1 is that a minute groove or protrusion 100 is provided on the uppermost surface of the protrusion 29.
[0068]
In the structure of FIG. 1, the adhesive 31 made of resin adhesive or solder is interposed between the protrusion 29 and the interposer substrate 11, so that a minute interval is generated on the connection surface, but a minute protrusion is provided. Accordingly, by pressing the protrusions against the interposer substrate while securing the adhesive force with the grooves, these intervals can be reduced, so that the heat dissipation can be improved.
[0069]
FIG. 9 shows the structure of another electronic device.
[0070]
A difference from the electronic device of FIG. 4 is that minute grooves or protrusions 101 and 102 are provided on the upper and lower surfaces of the metal block 33.
[0071]
In the structure of FIG. 4, the adhesive 31 composed of a resin adhesive or solder is interposed between the metal block 33 and the mother board 15 and between the metal block 33 and the interposer substrate 11, so that a minute interval is formed. It occurs on the connecting surface. However, by providing minute protrusions on the upper and lower surfaces of the metal block 33, the distance between the protrusions can be reduced by pressing the protrusions against the interposer substrate while securing the adhesive force with the grooves, thereby improving heat dissipation. be able to.
[0072]
The uneven metal block formed by the protrusions and grooves has the same effect when applied to the metal blocks shown in FIGS. However, it is preferable that the upper surface of the metal block having the structure of FIG.
[0073]
【The invention's effect】
ADVANTAGE OF THE INVENTION According to this invention, the heat dissipation of an electronic device can be improved.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of an electronic device.
FIG. 2 is a perspective view of an ECU module.
FIG. 3 is a cross-sectional view showing a manufacturing process of the structure of FIG. 1;
FIG. 4 is a cross-sectional view of an electronic device.
FIG. 5 is a cross-sectional view of an electronic device.
FIG. 6 is a cross-sectional view of an electronic device.
FIG. 7 is a diagram showing a manufacturing process;
FIG. 8 is a cross-sectional view of an electronic device.
FIG. 9 is a cross-sectional view of an electronic device.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 3 ... Bonding wire, 5 ... Resin adhesive, 7 ... Mold resin, 9 ... Electronic component, 11 ... Interposer substrate, 13 ... Circuit layer, 15 ... Motherboard, 17 ... Circuit layer, 19 ... Solder bump, DESCRIPTION OF SYMBOLS 21 ... Electronic component, 23 ... Solder, 25 ... Resin adhesive, 27 ... Aluminum housing, 29 ... Projection, 31 ... Resin adhesive, 33 ... Metal block, 35 ... Resin adhesive, 37 ... Metal core board, 39 ... Core metal (Inner layer metal plate), 41 ... semiconductor package, 43 ... through hole, 45 ... heat dissipation solder ball

Claims (9)

  1. A metal core substrate comprising a metal plate and insulating resin layers formed on both sides thereof, and an electronic component mounted on one of the surfaces;
    A circuit board including a resin layer and a circuit layer, the first surface of which is opposite to the other surface of the metal core substrate; and the metal core substrate is bonded to the other surface, and the circuit substrate is defined as the first surface. It is provided with housings that are respectively bonded and mounted on the second surface on the opposite side,
    An opening of the insulating resin layer exposing the metal plate is formed in a part of each of the both surfaces of the metal core substrate, and the metal plate exposed from the opening of the one surface of the metal core substrate The electronic component is die bonded,
    The circuit board is provided with a through hole extending between the other surface of the metal core substrate and the housing,
    A metal block that is molded separately from the circuit board and extends to the other surface of the metal core board through the through hole is bonded to the housing,
    The circuit layer formed on the insulating resin layer on the other surface of the metal core substrate, the circuit layer on the circuit substrate, and the metal plate and the metal exposed at the opening on the other surface of the metal core substrate. An electronic device characterized in that each block is bonded with solder.
  2.   The electronic device according to claim 1, wherein the metal block has a thermal conductivity larger than that of the resin layer of the circuit board.
  3.   The electronic device according to claim 1, wherein a gel-like insulator is filled in a space where the metal core substrate and the circuit substrate overlap each other.
  4.   The metal block and the housing are bonded to each other by a resin adhesive containing a filler having a thermal conductivity higher than that of the resin in solder or resin. The electronic device described.
  5.   5. The electronic device according to claim 1, wherein there is a gap between the metal block and a side wall of the through hole.
  6.   6. The semiconductor device according to claim 1, wherein the electronic component is a semiconductor device having a terminal connected to a circuit layer formed on the insulating resin layer on the one surface of the metal core substrate by wire bonding. An electronic device according to any one of the above.
  7.   The circuit layer formed on the insulating resin layer on the other surface of the metal core substrate, the circuit layer on the circuit substrate, and the metal plate and the metal exposed at the opening on the other surface of the metal core substrate. The electronic device according to claim 1, wherein the solder for bonding the blocks is lead-free solder containing Sn and Ag.
  8.   The electronic component is die-bonded to the surface of the metal plate exposed from the opening on the one surface of the metal core substrate by solder or silver paste. An electronic device according to 1.
  9. On the insulating resin layer on the other surface of the metal core substrate, a pad to which the solder for bonding the circuit layer formed on the insulating resin layer and the circuit layer of the circuit substrate is supplied is formed,
    The opening formed in the insulating resin layer on the other surface of the metal core substrate has the same diameter as the pad, and bonds the metal plate and the metal block exposed through the opening, respectively. The electronic device according to claim 1, wherein the solder is supplied.
JP2003170185A 2003-06-16 2003-06-16 Electronic equipment Active JP4218434B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003170185A JP4218434B2 (en) 2003-06-16 2003-06-16 Electronic equipment

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003170185A JP4218434B2 (en) 2003-06-16 2003-06-16 Electronic equipment
PCT/JP2004/008458 WO2004112129A1 (en) 2003-06-16 2004-06-16 Electronic device

Publications (2)

Publication Number Publication Date
JP2005005629A JP2005005629A (en) 2005-01-06
JP4218434B2 true JP4218434B2 (en) 2009-02-04

Family

ID=33549413

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003170185A Active JP4218434B2 (en) 2003-06-16 2003-06-16 Electronic equipment

Country Status (2)

Country Link
JP (1) JP4218434B2 (en)
WO (1) WO2004112129A1 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005049872B4 (en) * 2005-10-18 2010-09-23 Continental Automotive Gmbh IC component with cooling arrangement
JP4871676B2 (en) * 2006-08-30 2012-02-08 日立オートモティブシステムズ株式会社 Electronic circuit equipment
CN101415297B (en) * 2007-10-19 2010-07-07 华为技术有限公司 Printed plate component and method of processing the same
US7706144B2 (en) 2007-12-17 2010-04-27 Lynch Thomas W Heat dissipation system and related method
GB2461548B (en) 2008-07-02 2010-10-13 Thales Holdings Uk Plc Printed circuit board assembly
JPWO2010050087A1 (en) * 2008-10-31 2012-03-29 パナソニック株式会社 Multilayer semiconductor device and manufacturing method thereof
JP5218657B2 (en) * 2009-06-15 2013-06-26 富士通オプティカルコンポーネンツ株式会社 Optical module
JP2012227422A (en) * 2011-04-21 2012-11-15 Hitachi Chem Co Ltd Method of manufacturing metal housing integrated type circuit board
JP5884435B2 (en) * 2011-11-22 2016-03-15 富士通株式会社 Circuit board reinforcing position determining method and board assembly
DE102012216148A1 (en) * 2012-09-12 2014-04-03 Robert Bosch Gmbh Electronic circuit device for use in electronic commutated electromotor, has electrical conductive connection unit extending between electrical bonding surfaces and electrically connected with one another
JP6015508B2 (en) * 2013-03-18 2016-10-26 富士通株式会社 High frequency module
JP2016207785A (en) * 2015-04-20 2016-12-08 株式会社東芝 Semiconductor device
JP6501606B2 (en) * 2015-05-19 2019-04-17 ルネサスエレクトロニクス株式会社 Semiconductor device
WO2017017885A1 (en) * 2015-07-24 2017-02-02 日本電気株式会社 Mount structure, method of manufacturing mount structure, and wireless device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2728518B2 (en) * 1988-09-26 1998-03-18 株式会社日立製作所 Electronic device cooling system
JPH05136585A (en) * 1991-11-12 1993-06-01 Fujitsu Ltd Heat dissipating structure of heat releasing body
JP2002222897A (en) * 2001-01-29 2002-08-09 Hitachi Metals Ltd Package for semiconductor
JP3849573B2 (en) * 2001-05-22 2006-11-22 株式会社日立製作所 Electronic equipment

Also Published As

Publication number Publication date
JP2005005629A (en) 2005-01-06
WO2004112129A1 (en) 2004-12-23

Similar Documents

Publication Publication Date Title
US8987919B2 (en) Built-in electronic component substrate and method for manufacturing the substrate
KR20160012589A (en) Semiconductor package stack structure having interposer substrate
JP3057477B2 (en) Electronic package and manufacturing method thereof
US7365416B2 (en) Multi-level semiconductor module and method for fabricating the same
US7459346B2 (en) Intrinsic thermal enhancement for FBGA package
KR101210140B1 (en) Method of manufacturing semiconductor device
US7440282B2 (en) Heat sink electronic package having compliant pedestal
JP5259560B2 (en) Semiconductor device
KR100362796B1 (en) Semiconductor device and method for manufacturing the same, circuit substrate, and electronic device
JP3685947B2 (en) Semiconductor device and manufacturing method thereof
US4941033A (en) Semiconductor integrated circuit device
JP3176307B2 (en) Mounting structure of integrated circuit device and method of manufacturing the same
JP2570637B2 (en) MCM carrier
US6414248B1 (en) Compliant attachment interface
JP4473807B2 (en) Multilayer semiconductor device and lower layer module of multilayer semiconductor device
JP3994262B2 (en) Semiconductor device and manufacturing method thereof, circuit board, and electronic apparatus
US6287892B1 (en) Shock-resistant semiconductor device and method for producing same
KR100459971B1 (en) Semiconductor device, method and device for producing the same, circuit board, and electronic equipment
JP5715334B2 (en) Semiconductor device
US8238109B2 (en) Flex-rigid wiring board and electronic device
US7960827B1 (en) Thermal via heat spreader package and method
KR100563122B1 (en) Hybrid module and methods for manufacturing and mounting thereof
US7586183B2 (en) Multilevel semiconductor module and method for fabricating the same
JP3963484B2 (en) Electronic component, semiconductor device, and manufacturing method thereof
US6262489B1 (en) Flip chip with backside electrical contact and assembly and method therefor

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050531

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20060420

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080226

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080424

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080722

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080902

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20081021

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20081103

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111121

Year of fee payment: 3

R151 Written notification of patent or utility model registration

Ref document number: 4218434

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111121

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111121

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111121

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111121

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121121

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121121

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131121

Year of fee payment: 5