JP2001267460A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device which is improved in thermal characteristic by providing a thermal diffusion function of diffusing heat generated in a semiconductor chip to the semiconductor device. SOLUTION: A semiconductor chip is joined to one side surface of a thermally-conductive support substrate, and a conductor circuit substrate (interposer) is joined to the other side surface thereof, with use of an insulating adhesive having a filler with a good thermal conductivity mixed therein. An electrically conductive circuit is provided between electrode pads and solder balls for signal and power formed to external connection terminal lands, and a thermal diffusion path is provided between grounding solder balls, respectively.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a CSP (Chip)
The present invention relates to a semiconductor device of a (Scale Package) type. In particular, a heat conductive support plate having a heat diffusion function is provided between a semiconductor chip and a conductive circuit board, and a heat diffusion path to an external mounting board is provided through a heat dissipation via connected to the heat conductive support board. The present invention relates to a semiconductor device provided.

[0002]

2. Description of the Related Art In recent years, as the functions of semiconductor chips have increased and the degree of integration has increased, the size of semiconductor chips has increased (from 20 mm to 40 m).
m) and an increase in the number of electrodes (several hundred pins). On the other hand, as electronic devices become smaller, lighter and thinner, there is a demand for smaller semiconductor chips and higher mounting density.

In response to the above demand, a surface mount type BGA (Ball Grid Array) or a CSP (Chip S
size Package) has been developed. There has been proposed a method of connecting a semiconductor device on an external mounting board via a solder ball called an SBC method. According to this method, the semiconductor device is positioned and mounted on the connection terminal lands of the wiring pattern on the external mounting board (mother board), heated, and the solder balls are reflowed, so that the semiconductor device can be collectively fixed and mounted. Has attracted attention because it becomes easier.

[0004] This type of CSP (Chip Size P)
An example of a semiconductor device of the type (aka) is disclosed in
As shown in 0-74807, the semiconductor device includes a semiconductor chip having a plurality of electrodes (connection pads) on a surface thereof, and a wiring layer provided to extend on a side opposite to a surface facing the semiconductor chip. An opening is provided facing the electrode pad of the chip, and the opening is joined to a resin tape substrate having a plurality of filling vias filled with a conductive substance via a polyimide-based or epoxy-based insulating adhesive. It has a configuration.

[0005]

However, the CSP
The (Chip Size Package) type semiconductor device is a conventional QFP (Quad Flat Package).
e) Since the size and weight of the semiconductor device are greatly reduced as compared with the type semiconductor device, there are no conductor leads protruding to the outside having a heat diffusion function, and the heat diffusion path is limited to the region of the semiconductor chip. As a result, the semiconductor device cannot cope with an increase in the amount of heat generated due to the high integration and large size of the semiconductor chip, and the thermal characteristics of the semiconductor device are deteriorated.

In addition, there is a problem that it is difficult to maintain handleability and flatness due to insufficient mechanical strength of the resin tape substrate.

Further, with the increase in the function of the semiconductor chip, the increase in the frequency of the signal, and the increase in the number of electrodes (several hundred pins),
There has been a problem that the gap between the conductor leads is narrowed and the electrical characteristics are reduced due to the generation of EMI noise.

Further, there is a problem that thermal stress destruction occurs at the bonding base due to a difference in thermal expansion coefficient between the semiconductor chip and the copper foil wiring layer, thereby deteriorating electrical bonding.

The present invention has been made in view of the above circumstances, and a first object of the present invention is to provide a heat diffusion function for diffusing heat generated by a semiconductor chip and to dissipate heat to an external mounting substrate. An object of the present invention is to form a path and improve thermal characteristics of a semiconductor device.

A second object of the present invention is to provide a semiconductor device having a long-term reliability by imparting mechanical strength to a conductive circuit board formed on a resin tape substrate.

A third object of the present invention is to improve magnetic characteristics,
And to improve electrical characteristics by preventing EMI noise.

A fourth object of the present invention is to reduce the difference in thermal expansion coefficient between a semiconductor chip and a copper foil wiring layer.

[0013]

According to a first aspect of the present invention, there is provided a semiconductor device, comprising a metal thin plate member between the semiconductor chip and the conductive circuit board, corresponding to each of the electrode pads. A plurality of through-holes are perforated and a thermally conductive support substrate entirely coated with an insulating covering member including the inner surface of the through-hole is interposed.

[0014] With the above-described structure, the heat conductive support substrate formed of a metallic thin plate member functions to diffuse heat generated in the semiconductor chip and cope with an increase in the amount of heat generated by the semiconductor chip. In addition, the thermal characteristics of the semiconductor device can be improved.

Further, the heat conductive support substrate functions to impart mechanical strength to the resin tape substrate, and maintains the flatness of the resin tape substrate, and facilitates transportation and handling thereof. it can.

Furthermore, the heat conductive support plate functions as a ground plane, and can improve magnetic characteristics and prevent EMI noise from occurring, thereby improving electrical characteristics.

According to a second aspect of the present invention, in the semiconductor device of the first aspect, the insulating adhesive layer is formed of an elastomer resin member.

[0018] With the above structure, the elastomer resin functions as a thermal stress relieving material generated due to a difference in thermal expansion coefficient between the semiconductor chip and the copper foil wiring layer, thereby preventing stress destruction occurring at the joint base. can do.

According to a third aspect of the present invention, there is provided the semiconductor device according to the first or second aspect, wherein the insulating covering member and the insulating adhesive are made of Al having excellent thermal conductivity.
It is configured to include one selected from fillers of ₂ O ₃ , AlN, BN, and SiC.

With the above-described structure, the insulating member and the insulating adhesive mixed with the thermally conductive filler (preferably SiC) can more efficiently diffuse heat generated by the semiconductor chip. A heat diffusion path can be formed between the external mounting substrate and the semiconductor chip.

According to a fourth aspect of the present invention, in the semiconductor device of the first to third aspects, the metallic thin plate member is made of a copper, aluminum, iron, or silicon steel plate having excellent heat conductivity. It is composed of a kind selected from:

With the above configuration, the heat conductive support plate made of the heat conductive thin metal member (preferably a silicon steel plate) functions to absorb and diffuse heat generated in the semiconductor chip, It is possible to cope with an increase in the amount of heat generated due to high integration and size increase of the semiconductor chip, and it is possible to further improve the thermal characteristics of the semiconductor device.

According to a fifth aspect of the present invention, in the semiconductor device of the first to fourth aspects, the heat conductive support plate is formed by a chemical conversion treatment including the inner surface of the through hole. The entire surface is coated with a phosphate coating layer or an alkali black oxide coating layer.

With the above-described structure, the thermally conductive support substrate subjected to the chemical conversion treatment functions to form an electrically defective conductor and further improves the adhesion to the insulating adhesive layer. As a result, the bonding between the heat conductive support substrate and the semiconductor chip and the conductor circuit substrate can be further strengthened.

According to a sixth aspect of the present invention, in the semiconductor device according to any one of the first to fifth aspects, the solder ball for grounding includes the external connection terminal land for grounding and the thermal connection. Bonded to the heat conductive support substrate through a plurality of heat dissipation vias formed between the conductive support substrate,
The heat diffusion path is formed.

With the above configuration, the grounding solder ball functions as a heat radiating solder ball, passes through a heat conductive support substrate, passes through a heat radiating via, an external connection terminal land, and a grounding solder ball. In addition, a heat diffusion path for diffusing the heat generated by the semiconductor chip to the external mounting substrate is formed, and the heat conductive support substrate functions as a ground plane, thereby significantly improving the thermal characteristics and electrical characteristics of the semiconductor device. .

[0027]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A CSP type semiconductor device as an example according to an embodiment of the present invention will be described with reference to the accompanying drawings. Here, FIG. 1 is a cross-sectional view showing a configuration of a semiconductor device according to a first embodiment of the present invention, and FIG. 2 is a cross-sectional view showing a configuration of a semiconductor chip according to the first embodiment of the present invention. FIG. 3 is a cross-sectional view showing a heat conductive support substrate constituting the semiconductor device according to the first embodiment of the present invention, and FIG. 4 is a conductor circuit constituting the semiconductor device according to the first embodiment of the present invention. It is sectional drawing which shows a board | substrate.

First, as shown in FIG. 1, a CSP type semiconductor device 100 according to an embodiment of the present invention includes a semiconductor chip 12 having a plurality of electrode pads 11 formed on a surface of a semiconductor substrate 10; The entire surface of the heat conductive thin metal plate 13 is coated with an insulating coating member 15 mixed with a heat conductive filler 14 including the inner surface of the through hole 16 corresponding to each of the plurality of electrode pads 11. A conductive support substrate 17 and an internal connection terminal land 19 corresponding to the electrode pad 11 are provided at one end of the semiconductor element chip mounting surface side A of a highly heat-resistant polyimide resin tape as an example of the resin tape base material 18. And a Cu post, which is an example of the internal connection terminal 20, and connected to an external connection terminal land 21 at the other end.
8, a plurality of external connection terminals 23 protruding to the external mounting board surface side B via filling vias 22 formed in an area array shape, including a signal, a power supply solder ball 23a, and a ground solder ball 23b. And a conductor circuit board (interposer) 26 having a conductor circuit pattern 25 having conductor leads 24 of the type described above. The semiconductor chip 12 is provided on one surface of the heat conductive support substrate 17 and the conductor is provided on the other surface thereof. A circuit board (interposer) 26 is joined via an insulating adhesive 27 mixed with a filler having good thermal conductivity, and the signal and power supply formed on the electrode pads 11 and the external connection terminal lands 21 are formed. An electric conduction circuit is formed between each of the solder balls 23a and a heat diffusion path is formed between each of the solder balls 23b. There is a configuration.

Here, the insulating covering member 15 and the
Al as the insulating adhesive 27₂O ₃, AlN, BN,
A filler having excellent thermal conductivity such as SiC (preferably S
iC) may be mixed. By this outside
A heat diffusion path is formed between the chip mounting substrate and the semiconductor chip.
It is.

Subsequently, referring to FIGS. 2, 3 and 4,
The semiconductor chip 12 constituting the semiconductor device of the present invention,
The respective configurations of the heat conductive support board 17 and the conductive circuit board 26 will be described.

First, as shown in FIG. 2, the semiconductor chip 12 has a plurality of aluminum electrodes 1 on a surface of a semiconductor substrate 10.
A semiconductor element integrated circuit pattern (not shown) provided with 1a is formed, the surface is covered with a passivation protective film layer 11c except for the aluminum electrode 11a, and the aluminum electrode 11a is formed of a barrier metal 11b. It has a generally known configuration in which a plurality of electrode pads 11 are arranged.

Next, as shown in FIG. 3, the heat conductive support substrate 17 is formed by pressing a silicon steel plate, which is an example of the heat conductive thin metal plate member 13, with each of the electrode pads 11 by pressing, for example. A plurality of through-holes 16 are formed in a required shape, and an epoxy resin, which is an example of an insulating covering member 15, is formed on the surface of the through-hole 1 through the through-holes 1.
6 and the entire surface including the inner surface.

Here, as the heat conductive thin metal plate member 13, copper, aluminum, iron or the like can be used in addition to the silicon steel plate. As the insulating covering member 15, a glass epoxy resin, a polyimide resin, a polyamide resin, or the like can be used in addition to the epoxy resin.

As the heat conductive support substrate 17, a silicon steel plate as an example of the heat conductive metal sheet member 13 is subjected to a chemical conversion treatment on the entire surface including the through holes 16, and a chemical conversion treatment coating layer is formed. It is also possible to use a structure in which a phosphate coating layer treated with a phosphate, which is an example of the embodiment 29, is formed. Here, the heat conductive metal sheet member 13
For example, copper, aluminum, iron or the like can be used in addition to the silicon steel plate. Further, an alkali black oxide film layer which has been subjected to an alkali black oxidation treatment may be formed in addition to a phosphate film layer which is an example of the chemical conversion treatment film layer 29. As a result, the thermally conductive support substrate 17 can form an electrically defective conductor and can further improve the adhesion with the insulating resin adhesive 27.

Further, the electrode pads 11 of the semiconductor chip 12 and the plurality of conductor leads 2 are provided in the through holes 16.
A configuration in which a filling via filled with a conductive member 30 forming an electrical conduction circuit is formed between the internal connection terminal land 19 of FIG. This facilitates electrical connection between the conductive circuit board 26 and the semiconductor chip 12.

Next, as shown in FIG. 4, the conductive circuit board 26 has a semiconductor element chip mounting surface side A and an external mounting surface side B, and corresponds to the internal connection terminal lands 19 and the external connection terminal lands 21. A polyimide tape substrate, which is an example of a resin tape substrate 18 that is provided with a Cu post as an example of the conductive member 30 connected to the external connection terminal land 21 in the through hole 18a, And an internal connection terminal land 19 formed on one side of the semiconductor chip mounting surface A of the resin tape substrate 18 and corresponding to the electrode pad 11 at one end, and separated from the internal connection terminal land 19 at the other end. A plurality of conductor leads 24 having terminal lands 21 are provided, and the external connection terminal lands 21 of each conductor lead 24 are conductors arranged in an area array. A road pattern 25, the connected to the internal connection terminal lands 19 semiconductor chip mounting surface A
Through the through hole 16 of the conductive support substrate 17.
And a solder ball for signal and power supply, which is an example of the external connection terminal 23 which is an example of the external connection terminal 23 which protrudes to the external mounting board surface B and is connected to the tip of the Cu post 20a. 23a and a grounding solder ball 23b are provided.

Here, the conductive circuit board (interposer)
26 has a configuration in which the conductor circuit pattern 25 is formed on the semiconductor element chip mounting surface side A of the resin tape base material 18, but has a configuration in which the conductor circuit pattern 25 is formed on the external mounting surface B (not shown). You can also. In this case, a cover coat layer (not shown) that exposes the external connection terminal lands 21 is provided on the external mounting board side B of the conductive circuit pattern 25, and the solder balls 23a, 23b connected to the external connection terminal lands 21 are provided. May be provided.

A CSP type semiconductor device 200 according to another embodiment of the present invention will be described with reference to the attached drawings.

FIG. 5 is a sectional view showing the structure of a semiconductor device according to a second embodiment of the present invention, and FIG. 6 is a semiconductor chip constituting the semiconductor device according to the second embodiment of the present invention. FIG. 7 is a cross-sectional view showing a heat conductive support substrate constituting the semiconductor device according to the second embodiment of the present invention, and FIG. 8 is a semiconductor device according to the second embodiment of the present invention. FIG. 4 is a cross-sectional view showing a conductor circuit board that constitutes the present invention.

As shown in FIG. 5, a CSP type semiconductor device 200 according to a second embodiment of the present invention includes a semiconductor chip 52 having a plurality of electrode pads 51 formed on a surface of a semiconductor substrate 50. (Refer to FIG. 6) On the surface of the heat conductive thin metal plate member 53, an epoxy resin, which is an example of the insulating covering member 54, is coated, including the inner surface of the through hole 55 corresponding to each of the plurality of electrode pads 51. One end of the heat conductive supporting substrate 56 (see FIG. 7) coated on the entire surface and the semiconductor element chip mounting surface side A of a polyimide resin tape having high heat resistance, which is an example of the resin tape base material 57, An internal connection terminal land 58 corresponding to the pad 51 is provided, connected to the internal connection terminal land 58, and provided with a Cu post as an example of the internal connection terminal 59. A child land 60 and an external connection terminal land 61 for grounding are provided, connected to the external connection terminal land 60 for signal and power supply and the external connection terminal land 61 for ground, and formed in an area array on the resin tape base material 57. And a solder ball 63a for power supply and a solder ball 63b for grounding, which are examples of the external connection terminal 63 protruding to the external mounting board surface side B via the filled via 62, and correspond to the solder ball 63b for grounding. A conductor circuit pattern 66 having a plurality of conductor leads 65 formed with Cu posts, which is an example of a heat-filled via 64 protruding toward the semiconductor chip mounting surface side A by being connected to the ground external connection terminal land 61, is formed. And a conductive circuit board (interposer) 67 (see FIG. 7). Chip 52
However, the conductor circuit board (interposer) 67 is provided on the other side.
Are bonded via a thermosetting resin adhesive, which is an example of the insulating adhesive 68, and the electrode pads 51 and the internal connection terminals 59 formed on the external connection terminal lands 63 are connected to each other to form the signal, An electric conduction circuit is provided between each of the power supply solder balls 63a, and the heat dissipation filling vias 64 formed on the external connection terminal lands 63b are connected to the heat conductive support substrate 56 so as to be connected to the ground. A heat diffusion path is formed between each of the solder balls 62b.

Here, as the heat conductive metal sheet member 53, copper, aluminum, iron or the like can be used in addition to the silicon steel sheet. As the insulating covering member 54, a glass epoxy resin, a polyimide resin, a polyamide resin, or the like can be used in addition to the epoxy resin. Also,
The thermal conductive support substrate 56 is an example of a chemical conversion coating layer 69 in which a silicon steel plate, which is an example of the thermally conductive metal sheet member 53, is subjected to chemical conversion treatment on the entire surface including the through holes 55. It is also possible to use one having a configuration in which a phosphate coating layer subjected to a phosphate treatment is formed. Further, an alkali black oxide film layer subjected to an alkali black oxidation treatment may be formed in addition to a phosphate film layer which is an example of the chemical conversion film layer 69. Thereby, the heat conductive support substrate 56 forms an electrically defective conductor,
Adhesion with the insulating resin adhesive 68 is further improved. The ground solder balls 63b function as heat radiation solder balls, and the heat conductive support substrate 5
6 functions as a ground substrate.

[0042]

According to the first aspect of the present invention, since the heat conductive supporting substrate is interposed between the semiconductor chip and the conductive circuit board, the heat conductive after the external mounting board (mother board) is mounted. The conductive support substrate functions to diffuse the heat generated in the semiconductor chip, and can cope with an increase in the amount of heat generated by the semiconductor chip, thereby improving the thermal characteristics of the semiconductor device. Further, the heat conductive support substrate functions to impart mechanical strength to the resin tape substrate, and can maintain the flatness of the resin tape substrate, and facilitate transport and handling thereof. Furthermore, the heat conductive support plate functions as a ground plane, improving magnetic properties,
In addition, generation of EMI noise can be prevented and electrical characteristics can be improved. The semiconductor device according to the second aspect is the first aspect.
In the semiconductor device described above, since an elastomeric adhesive is used as the insulating adhesive, the elastomeric adhesive functions as a thermal stress relieving material caused by a difference in thermal expansion coefficient between the semiconductor chip and the conductive circuit board. However, stress destruction of the semiconductor device can be prevented, and long-term reliability of the semiconductor device can be maintained. A semiconductor device according to a third aspect is the semiconductor device according to the first or second aspect, wherein the heat conductive filler is mixed in the insulating covering member and the insulating adhesive, so that the heat conductive filler is a semiconductor chip. Functioning to diffuse heat more efficiently, a heat diffusion path can be formed between the external mounting substrate and the semiconductor chip, and the thermal characteristics of the semiconductor device can be improved. Claim 4
The semiconductor device according to the present invention is the same as the semiconductor device according to any one of the first to third aspects, and uses copper, aluminum, iron, silicon steel plate, or the like having a good heat diffusion property, so that the heat diffusion property is improved. According to a fifth aspect of the present invention, there is provided the semiconductor device according to the first to fourth aspects, wherein the thermally conductive support substrate is coated with the chemical conversion coating layer, thereby forming an electrically defective conductor. Thus, the adhesion with the insulating resin adhesive 27 is further improved. According to a sixth aspect of the present invention, there is provided the semiconductor device according to the first to fifth aspects, wherein a heat-dissipating filling via connected to the heat-conductive support substrate is formed. It functions as a ball, passes through the heat conductive support substrate, passes through heat dissipation vias, external connection terminal lands, and grounding solder balls, and forms a heat diffusion path that diffuses the heat generated by the semiconductor chip to the external mounting substrate. The conductive support substrate functions as a ground plane, thereby improving parasitic current, heat dissipation, and electrical efficiency, and significantly improving the thermal and electrical characteristics of the semiconductor device.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a sectional view showing a semiconductor chip constituting the semiconductor device according to the embodiment of the present invention;

FIG. 3 is a cross-sectional view showing a heat conductive support substrate constituting the semiconductor device according to the embodiment of the present invention.

FIG. 4 is a cross-sectional view showing a conductive circuit board constituting the semiconductor device according to the embodiment of the present invention;

FIG. 5 is a cross-sectional view illustrating a configuration of a semiconductor device according to another embodiment of the present invention.

FIG. 6 is a sectional view showing a semiconductor chip constituting a semiconductor device according to another embodiment of the present invention.

FIG. 7 is a cross-sectional view showing a heat conductive support substrate constituting a semiconductor device according to another embodiment of the present invention.

FIG. 8 is a cross-sectional view illustrating a conductive circuit board included in a semiconductor device according to another embodiment of the present invention.

[Explanation of symbols]

Reference Signs List 100 semiconductor device A semiconductor element chip mounting surface side B external mounting substrate surface side 10 semiconductor substrate 11 electrode pad 11a aluminum electrode 11b barrier metal 11c protective film layer 12 semiconductor chip 13 heat conductive metal sheet member 14 heat conductive filler 15 insulation Covering member 16 Through hole 17 Thermal conductive support substrate 18 Resin tape base material (polyimide resin tape with high heat resistance) 18a Through hole 19 Internal connection terminal land 20 Internal connection terminal 21 External connection terminal land 22 Filling via 23 External connection terminal 23a Solder ball for signal and power supply 23b Solder ball for grounding 24 Conductor lead 25 Conductor circuit pattern 26 Conductor circuit board (interposer) 27 Insulating adhesive 29 Chemical conversion coating layer 30 Conductive member 200 Semiconductor device 50 Semiconductor substrate 51 Electricity Pad 52 Semiconductor chip 53 Heat conductive thin metal plate member 54 Insulating covering member 55 Through hole 56 Heat conductive support substrate 57 Resin tape base material 58 Internal connection terminal land 59 Internal connection terminal 60 External connection terminal land for signal and power supply 61 Ground External connection terminal land 62 Filling via 63 External connection terminal 63a Solder ball for signal and power supply 63b Solder ball for ground 64 Filling via for heat radiation 65 Conductor lead 66 Conductor circuit pattern 67 Conductor circuit board (interposer) 68 Insulating adhesive 69 Chemical Chemical conversion coating layer

Claims (6)

[Claims] 1. A semiconductor chip on which a semiconductor element integrated circuit pattern having a plurality of electrode pads is formed, a resin tape substrate having a plurality of filling vias arranged in an area array, and one end portion on one surface thereof. A conductor circuit pattern having a plurality of conductor leads provided with a signal, a power supply and a grounding external connection terminal land, and a signal, a power supply and a grounding internal connection terminal land on the other end, is formed on the other surface. A plurality of signals connected to each of the signal, power and ground external connection terminal lands, and a conductor circuit board on which power and ground solder balls are formed are joined via an insulating adhesive layer, and In a semiconductor device in which an electric conduction circuit is formed between a pad and the solder ball, a metal thin plate member is provided between the semiconductor chip and the conductive circuit board. A plurality of through-holes corresponding to each of the electrode pads are perforated, and a thermally conductive support substrate entirely coated with the insulating covering member including the inner surface of the through-hole is interposed. Characteristic semiconductor device. 2. The semiconductor device according to claim 1, wherein said insulating adhesive layer is an elastomer resin member. 3. The semiconductor device according to claim 1, wherein the insulating covering member and the insulating adhesive are selected from Al ₂ O ₃ , AlN, BN, and SiC fillers having excellent thermal conductivity. A semiconductor device having a configuration in which a selected type is mixed. 4. The semiconductor device according to claim 1, wherein said metallic thin plate member is selected from copper, aluminum, iron, and silicon steel plate having excellent thermal conductivity. A semiconductor device characterized by being a kind. 5. The semiconductor device according to claim 1, wherein said heat conductive support plate includes a phosphate coating layer or an alkali black layer formed by a chemical conversion treatment, including an inner surface of said through hole. A semiconductor device having a configuration in which the entire surface is coated with an oxide film layer. 6. The semiconductor device according to claim 1, wherein the ground solder ball is formed between the ground external connection terminal land and the heat conductive support substrate. A semiconductor device having a configuration in which a heat diffusion path is formed by bonding to the heat conductive support substrate via a plurality of heat radiation vias corresponding to the solder balls for grounding.