JP4202454B2 - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法 Download PDF

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Publication number
JP4202454B2
JP4202454B2 JP34435097A JP34435097A JP4202454B2 JP 4202454 B2 JP4202454 B2 JP 4202454B2 JP 34435097 A JP34435097 A JP 34435097A JP 34435097 A JP34435097 A JP 34435097A JP 4202454 B2 JP4202454 B2 JP 4202454B2
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Japan
Prior art keywords
film
interlayer insulating
insulating film
organic resin
inorganic
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Expired - Fee Related
Application number
JP34435097A
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English (en)
Japanese (ja)
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JPH11163364A (ja
JPH11163364A5 (https=
Inventor
久 大谷
智史 村上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP34435097A priority Critical patent/JP4202454B2/ja
Priority to US09/197,767 priority patent/US7202497B2/en
Publication of JPH11163364A publication Critical patent/JPH11163364A/ja
Priority to US09/550,598 priority patent/US7192865B1/en
Publication of JPH11163364A5 publication Critical patent/JPH11163364A5/ja
Priority to US11/713,619 priority patent/US8440509B2/en
Application granted granted Critical
Publication of JP4202454B2 publication Critical patent/JP4202454B2/ja
Anticipated expiration legal-status Critical
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  • Liquid Crystal (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP34435097A 1997-11-27 1997-11-27 半導体装置およびその作製方法 Expired - Fee Related JP4202454B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP34435097A JP4202454B2 (ja) 1997-11-27 1997-11-27 半導体装置およびその作製方法
US09/197,767 US7202497B2 (en) 1997-11-27 1998-11-23 Semiconductor device
US09/550,598 US7192865B1 (en) 1997-11-27 2000-04-17 Semiconductor device and process for producing the same
US11/713,619 US8440509B2 (en) 1997-11-27 2007-03-05 Method for producing a semiconductor device by etch back process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34435097A JP4202454B2 (ja) 1997-11-27 1997-11-27 半導体装置およびその作製方法

Publications (3)

Publication Number Publication Date
JPH11163364A JPH11163364A (ja) 1999-06-18
JPH11163364A5 JPH11163364A5 (https=) 2005-07-14
JP4202454B2 true JP4202454B2 (ja) 2008-12-24

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ID=18368566

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34435097A Expired - Fee Related JP4202454B2 (ja) 1997-11-27 1997-11-27 半導体装置およびその作製方法

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JP (1) JP4202454B2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4619050B2 (ja) * 2003-06-30 2011-01-26 株式会社半導体エネルギー研究所 表示装置の作製方法
KR101137873B1 (ko) 2005-04-11 2012-04-20 엘지디스플레이 주식회사 패드전극 형성방법, 그를 이용한 액정표시소자의 제조방법,및 그 방법에 의해 제조된 액정표시소자
JP5258277B2 (ja) 2006-12-26 2013-08-07 株式会社半導体エネルギー研究所 液晶表示装置
CN111886699B (zh) * 2018-03-28 2024-06-14 堺显示器制品株式会社 有机el显示装置及其制造方法

Also Published As

Publication number Publication date
JPH11163364A (ja) 1999-06-18

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