JP4194565B2 - 結晶材料の精製方法及び装置、結晶材料からの結晶製造方法及び装置、及び結晶使用方法 - Google Patents

結晶材料の精製方法及び装置、結晶材料からの結晶製造方法及び装置、及び結晶使用方法 Download PDF

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JP4194565B2
JP4194565B2 JP2005017804A JP2005017804A JP4194565B2 JP 4194565 B2 JP4194565 B2 JP 4194565B2 JP 2005017804 A JP2005017804 A JP 2005017804A JP 2005017804 A JP2005017804 A JP 2005017804A JP 4194565 B2 JP4194565 B2 JP 4194565B2
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opening
crystal
range
value
melting
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Japanese (ja)
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JP2005213141A (ja
JP2005213141A5 (enExample
Inventor
カンドラー イェルク
パルトヒヤ ルッツ
カウフホールド トーマス
ヴェルハン ギュンター
クニッシュ クレメンス
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Schott AG
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Schott AG
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/108—Including a solid member other than seed or product contacting the liquid [e.g., crucible, immersed heating element]

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2005017804A 2004-01-26 2005-01-26 結晶材料の精製方法及び装置、結晶材料からの結晶製造方法及び装置、及び結晶使用方法 Expired - Fee Related JP4194565B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102004003829A DE102004003829A1 (de) 2004-01-26 2004-01-26 Verfahren zum Reinigen von Kristallmaterial und zum Herstellen von Kristallen, eine Vorrichtung hierzu sowie die Verwendung der so erhaltenen Kristalle

Publications (3)

Publication Number Publication Date
JP2005213141A JP2005213141A (ja) 2005-08-11
JP2005213141A5 JP2005213141A5 (enExample) 2006-06-15
JP4194565B2 true JP4194565B2 (ja) 2008-12-10

Family

ID=34801012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005017804A Expired - Fee Related JP4194565B2 (ja) 2004-01-26 2005-01-26 結晶材料の精製方法及び装置、結晶材料からの結晶製造方法及び装置、及び結晶使用方法

Country Status (4)

Country Link
US (1) US7344595B2 (enExample)
EP (1) EP1683896A3 (enExample)
JP (1) JP4194565B2 (enExample)
DE (1) DE102004003829A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8101020B2 (en) * 2005-10-14 2012-01-24 Ricoh Company, Ltd. Crystal growth apparatus and manufacturing method of group III nitride crystal
DE102006038902A1 (de) 2006-08-18 2008-02-21 Schott Ag Verfahren zur Bestimmung der Laserstabilität von optischen Material sowie damit erhaltene Kristalle und deren Verwendung
US20090280050A1 (en) * 2008-04-25 2009-11-12 Applied Materials, Inc. Apparatus and Methods for Casting Multi-Crystalline Silicon Ingots
DE102008054148B9 (de) 2008-10-31 2021-12-30 Hellma Materials Gmbh & Co. Kg Verfahren zur Bestimmung der Laserstabilität von optischem Material sowie damit erhaltene Kristalle und deren Verwendung
CN103409789B (zh) * 2013-06-19 2016-03-30 青岛隆盛晶硅科技有限公司 一种多晶硅定向凝固装置
US9845549B2 (en) * 2014-10-31 2017-12-19 Sumitomo Electric Industries, Ltd. Method of manufacturing silicon carbide single crystal
JP6881365B2 (ja) * 2018-03-16 2021-06-02 信越半導体株式会社 炭化珪素単結晶の製造方法及び製造装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2149076A (en) * 1935-10-18 1939-02-28 Massachusetts Inst Technology Method for the manufacture of crystalline bodies
DE10010484A1 (de) 2000-03-03 2001-09-13 Schott Glas Verfahren und Vorrichtung zur Züchtung von großvolumigen orientierten Einkristallen
US6342312B2 (en) 1996-03-22 2002-01-29 Canon Kabushiki Kaisha Calcium fluoride crystal, optical article and exposure apparatus for photo-lithography using the same
JP3475407B2 (ja) 1997-03-31 2003-12-08 キヤノン株式会社 フッ化物結晶の製造装置及び製造法並びにルツボ
JP2004002196A (ja) * 1997-03-31 2004-01-08 Canon Inc フッ化物結晶の製造装置及び製造法並びにルツボ
JP3631063B2 (ja) * 1998-10-21 2005-03-23 キヤノン株式会社 フッ化物の精製方法及びフッ化物結晶の製造方法
DE10010485C2 (de) 2000-03-03 2002-10-02 Schott Glas Verfahren zur Herstellung von hochhomogenen, grossformatigen Einkristallen aus Calciumfluorid sowie deren Verwendung
JP2002326811A (ja) * 2001-02-27 2002-11-12 Canon Inc 弗化物結晶の製造方法及び装置
DE10142651C5 (de) * 2001-08-31 2009-04-23 Schott Ag Verfahren zur Herstellung von hoch homogenen strahlenbeständigen streufreien Einkristallen, eines damit erhaltenen Ingots sowie deren Verwendung
US20030070606A1 (en) * 2001-10-05 2003-04-17 Leblond Nicolas Preparation of feedstock of alkaline earth and alkali metal fluorides
US6669920B2 (en) * 2001-11-20 2003-12-30 Corning Incorporated Below 160NM optical lithography crystal materials and methods of making
DE10347430B4 (de) 2003-10-13 2006-04-27 Schott Ag Ofen zur Züchtung von Einkristallen aus geschmolzener Kristallrohmasse
US6982001B2 (en) * 2004-05-28 2006-01-03 Corning Incorporated Dehydroxylation and purification of calcium fluoride materials using a halogen containing plasma

Also Published As

Publication number Publication date
JP2005213141A (ja) 2005-08-11
US20050178316A1 (en) 2005-08-18
EP1683896A2 (de) 2006-07-26
EP1683896A3 (de) 2008-12-31
DE102004003829A1 (de) 2005-08-18
US7344595B2 (en) 2008-03-18

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