JP4192396B2 - Semiconductor switching module and semiconductor device using the same - Google Patents

Semiconductor switching module and semiconductor device using the same Download PDF

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JP4192396B2
JP4192396B2 JP2000118093A JP2000118093A JP4192396B2 JP 4192396 B2 JP4192396 B2 JP 4192396B2 JP 2000118093 A JP2000118093 A JP 2000118093A JP 2000118093 A JP2000118093 A JP 2000118093A JP 4192396 B2 JP4192396 B2 JP 4192396B2
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side plate
semiconductor
low
switching module
semiconductor switching
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JP2001308263A (en
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靖之 大河内
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Denso Corp
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Denso Corp
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Priority to JP2000118093A priority Critical patent/JP4192396B2/en
Priority to EP10006258.7A priority patent/EP2234154B1/en
Priority to EP10006259.5A priority patent/EP2244289B1/en
Priority to EP06022504.2A priority patent/EP1742265B1/en
Priority to EP01109620.3A priority patent/EP1148547B8/en
Priority to US09/837,382 priority patent/US6542365B2/en
Publication of JP2001308263A publication Critical patent/JP2001308263A/en
Priority to US10/314,139 priority patent/US6845012B2/en
Priority to US10/756,340 priority patent/US7027302B2/en
Priority to US10/946,210 priority patent/US7106592B2/en
Priority to US11/325,331 priority patent/US7250674B2/en
Priority to US11/452,328 priority patent/US7248478B2/en
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
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    • H01L2924/181—Encapsulation

Description

【０００１】
【発明の属する技術分野】
本発明は、電力用三相インバ−タ回路のコンパクト化に好適な半導体スイッチングモジュ−ル及びそれを用いた電力用三相インバ−タ回路用の半導体装置の改良に関する。
【０００２】
【従来の技術】
特開平６ー２９１２２３号公報は、半導体チップの両面から放熱を行う半導体装置を提案している。この半導体装置を図７に示す。（ａ）はその平面図、（ｂ）はそのＧーＧ線矢視断面図、（ｃ）はそのＨーＨ線矢視断面図である。
【０００３】
この半導体装置は、一対のヒ−トシンク兼用の伝熱部材Ｊ２、Ｊ３が、それぞれ半導体チップＪ１の両面に熱的かつ電気的に接続され、伝熱部材Ｊ２、Ｊ３はそれぞれ半導体チップへの給電部材としての機能と、ヒ−トシンク及び伝熱部材としての機能とを兼用している。以下、この種の半導体装置を両面冷却型半導体装置ともいう。
【０００４】
この半導体装置では、少なくとも半導体チップＪ１の側面は樹脂Ｊ５により封止されてカ−ド状のモジュ−ル（カ−ドモジュ−ルともいう）となっており、伝熱部材Ｊ２、Ｊ３の反チップ側の主面は冷却のために露出するとともに半導体チップの主電極に給電する主電極端子をなし、半導体チップの制御電極に給電する制御端子Ｊ４はカ−ドモジュ−ルの側面から封止樹脂を貫通して外部に突出している。
【０００５】
Ｊ６は絶縁板、Ｊ７は半導体チップのボンディングパッドに接合される半田バンプである。
【０００６】
【発明が解決しようとする課題】
しかしながら、上記した従来の両面冷却型半導体装置では、伝熱部材Ｊ２、Ｊ３を半導体チップＪ１の両主面に接合することにより、これら伝熱部材Ｊ２、Ｊ３を通じて半導体チップの両面から良好に放熱できるものの、伝熱部材Ｊ２、Ｊ３は半導体チップの両主面に個別に形成された主電極面に接合されるので、モジュ−ルに単純なトランジスタ又はダイオ−ドを一個乃至並列に複数個内蔵することが困難であり、複雑な電力スイッチング回路をモジュ−ル化することが困難であるという問題点があった。
【０００７】
特に、この種の半導体スイッチングモジュ−ルの重要な用途として交流モ−タ制御用の三相インバ−タ回路があるが、上記従来技術では、６つのカ−ドモジュ−ルをそれぞれブスバ−などで接続する必要があり、部品点数、組み付け工程の増大と、組み付け部位の緩みが問題となる。
【０００８】
本発明は、上記問題点に鑑みなされたものであり、電力用三相インバ−タ回路をコンパクトに構成できる半導体スイッチングモジュ−ル及びそれを用いた半導体装置を提供することをその目的としている。
【０００９】
【課題を解決するための手段】
請求項１記載の半導体スイッチングモジュールは、ハイサイド側の半導体スイッチング素子が形成されたハイサイド側の半導体チップと、ロ−サイド側の半導体スイッチング素子が形成されたロ−サイド側の半導体チップとを有し、前記両半導体スイッチング素子を直列接続してなるインバ−タ回路を内蔵する半導体スイッチングモジュ−ルにおいて、
それぞれ金属板からなるハイサイド板、ミドルサイド板、ローサイド板を有し、前記両半導体チップの出力側の主電極面は、互いに離れて前記ミドルサイド板の内側主面に直接あるいは導電部材を介して接合され、前記ハイサイド側の半導体チップの高位電源側の主電極面は、前記ハイサイド板の内側主面に直接あるいは導電部材を介して接合され、前記ロ−サイド側の半導体チップの低位電源側の主電極面は、前記ローサイド板の内側主面に直接あるいは導電部材を介して接合され、前記両半導体チップは、前記ミドルサイド板、ハイサイド板及びローサイド板の外主面を露出させてモ−ルドされる封止樹脂部により一体に被覆され、前記ハイサイド板（１）、ローサイド板（２）及びミドルサイド板（３）は、前記封止樹脂部（８）から面方向に突出する突出端子部（１０、２０、３０）と、前記半導体チップ（４ａ、４ｂ）に背向する部位にて前記封止樹脂部（８）から前記半導体チップ（４ａ、４ｂ）の厚さ方向に突出して露出する外主面（１０、１１、１２）とを有することを特徴としている。
【００１０】
本構成によれば、半導体チップの両面冷却機能を維持しつつ、単相インバ−タ回路を単一モジュ−ル化することができ、コンパクト化及び組み付け工数の低減を図り、車両振動などに対する締結部の緩みなどに対する懸念を軽減することができる。
【００１１】
また、ミドルサイド板（単相インバ−タ回路の出力電極配線又はその一部）が両半導体チップの共通基板を兼ねるので、両半導体チップの高密度配置を実現することができ、更に配線部品点数の低減及び接続工数の低減と配線損失の低減とを図ることができる。
【００１２】
請求項２記載の構成によれば請求項１記載の半導体スイッチングモジュ−ルにおいて更に、前記ハイサイド板及びローサイド板の外主面は、略同一平面をなすことを特徴としている。
【００１３】
本構成によれば、ハイサイド板及びローサイド板を薄い電気絶縁材を介して同じ冷却部材の同一平面に密着させることができ、簡素な構造で良好な両面冷却を図ることができる。
【００１４】
請求項３記載の構成によれば請求項２記載の半導体スイッチングモジュ−ルにおいて更に、前記ローサイド板又はハイサイド板の一方と前記両半導体チップの一方との間、及び、前記ミドルサイド板と前記両半導体チップの他方との間に良熱伝導性かつ良電導性のスペ−サが介設され、前記両スペ−サは、前記両半導体チップの厚さの差を吸収する厚さの差を有することを特徴としている。
【００１５】
本構成によれば、両半導体チップの厚さの差をスペ−サにより吸収できるので、ハイサイド板、ミドルサイド板、ローサイド板を簡単な平板とし、かつ、ハイサイド板とローサイド板とを同一厚さの部材とすることができる。
【００１６】
請求項４記載の構成によれば請求項３記載の半導体スイッチングモジュ−ルにおいて更に、前記両半導体チップの制御電極は、前記半導体チップのスペ−サ側の主面に形成されているので、このスペ−サの分だけ、ハイサイド板又はローサイド板とミドルサイド板との間にギャップを余計に確保することができるので、たとえば半導体チップの制御電極と制御電極端子とを接続する接続部材たとえばボンデディングワイヤの配置スペ−スなどを無理なく確保することができる。
【００１７】
請求項５記載の構成によれば請求項１乃至４のいずれか記載の半導体スイッチングモジュ−ルにおいて更に、前記ハイサイド板、ローサイド板及びミドルサイド板の外主面は、前記半導体チップに背向する部位にて電気絶縁膜を介してそれぞれ冷却部材に密着し、前記ハイサイド板、ローサイド板及びミドルサイド板は、前記封止樹脂部から略面方向へ延設されて端子をなす突出端子部を有することを特徴としている。
【００１８】
本構成によれば、これらハイサイド板、ローサイド板及びミドルサイド板は、半導体チップと冷却部材とを最短距離で熱的に結合するとともに、それぞれ端子を兼ねることができるので、良好な冷却と、簡素で信頼性に優れた端子構造を実現することができる。
【００１９】
請求項６記載の構成によれば請求項３又は４記載の半導体スイッチングモジュ−ルにおいて更に、前記スペ−サは、前記封止樹脂部から略面方向へ延設されて端子をなす突出端子部を有することを特徴としている。
【００２０】
本構成によれば、スペ−サが封止樹脂部から面方向へ飛び出して端子を兼ねるので、簡素で信頼性に優れた端子構造を実現することができる。
【００２１】
請求項７記載の構成によれば請求項１乃至６のいずれか記載の半導体スイッチングモジュ−ルにおいて更に、 前記スペ−サよりも幅広に形成された前記ハイサイド板、ローサイド板及びミドルサイド板の内側主面に接合されて面方向外側へ突出する主電極端子を有することを特徴としている。
【００２２】
このようにすれば、たとえば銅など、電気抵抗がＭＯやＷなどより格段に小さく安価な端子を用いることができ、また、スペ−サやミドルサイド板として線膨張係数が半導体チップに近い金属材料を用いる場合でも、その形状加工が容易となり、材料費や形状加工費を低減することができる。
【００２３】
請求項８記載の構成によれば請求項４及び７記載の半導体スイッチングモジュ−ルにおいて更に、前記両半導体チップの制御電極に電気的に接続されて面方向外部に突出する制御電極端子は、前記主電極端子と反対方向に突設されることを特徴としている。
【００２４】
本構成によれば、制御電極端子と主電極端子とを反対側に突出させているので、両端子間の電気絶縁の確保が容易となり、配線（ブスバ−）引き回しが容易となる。
【００２５】
請求項９記載の構成によれば請求項４及び７記載の半導体スイッチングモジュ−ルにおいて更に、前記半導体チップは、前記ハイサイド板及びローサイド板の一方と前記ミドルサイド板との間に互いに離れて並列に介設されるスイッチングトランジスタチップ及びフライホイルダイオ−ドチップからなることを特徴としている。
【００２６】
本構成によれば、各半導体チップはそれぞれＩＧＢＴ（絶縁ゲ−トバイポ−ラトランジスタ）や、ＭＯＳＴ（絶縁ゲートトランジスタ）や、ＢＰＴ（バイポ−ラトランジスタ）とフライホイルダイオ−ドとを並列接続した２チップ構造をもつので、更に、冷却性及び小型の単相大電流インバ−タ回路を実現することができる。
【００２７】
なお、ＩＧＢＴチップ又はＢＰＴチップとフライホイルダイオ−ドチップとは通常厚さが異なるので、このチップ間厚さの差は異なる厚さの一対のスペ−サを、ハイサイド板とミドルサイド板との間、及びローサイド板とミドルサイド板との間にそれぞれ介設することが好ましい。
【００２８】
請求項１０記載の構成は、前記ハイサイド板、ローサイド板及びミドルサイド板の外主面は、前記半導体チップに背向する部位にて電気絶縁膜を介してそれぞれ冷却部材に密着し、前記冷却部材は、前記半導体スイッチングモジュ−ルを挟んで厚さ方向に挟圧されることを特徴とする請求項１乃至９のいずれか記載の半導体スイッチングモジュ−ルを用いる半導体装置である。
【００２９】
本構成によれば、ハイサイド板及びローサイド板とミドルサイド板とは、両側の冷却部材を挟圧することにより密着される。すなわち、両冷却部材は、締め付け部材を兼ねるので、各部品間の厚さ方向の密着性は良好となり、耐振性なども向上する。
【００３０】
請求項１１記載の半導体スイッチングモジュールは、ハイサイド側の半導体スイッチング素子が形成されたハイサイド側の半導体チップと、ロ−サイド側の半導体スイッチング素子が形成されたロ−サイド側の半導体チップとを有し、前記両半導体スイッチング素子を直列接続してなるインバ−タ回路を内蔵する半導体スイッチングモジュ−ルにおいて、
それぞれ金属板からなるハイサイド板、ミドルサイド板、ローサイド板を有し、前記両半導体チップの出力側の主電極面は、互いに離れて前記ミドルサイド板の内側主面に直接あるいは導電部材を介して接合され、前記ハイサイド側の半導体チップの高位電源側の主電極面は、前記ハイサイド板の内側主面に直接あるいは導電部材を介して接合され、前記ロ−サイド側の半導体チップの低位電源側の主電極面は、前記ローサイド板の内側主面に直接あるいは導電部材を介して接合され、前記両半導体チップは、前記ミドルサイド板、ハイサイド板及びローサイド板の外主面を露出させてモ−ルドされる封止樹脂部により一体に被覆され、前記ハイサイド板及びローサイド板の外主面は、同一平面をなし、前記ローサイド板又はハイサイド板の一方と前記両半導体チップの一方との間、及び、前記ミドルサイド板と前記両半導体チップの他方との間に良熱伝導性かつ良電導性のスペ−サが介設され、前記両スペ−サは、前記両半導体チップの厚さの差を吸収する厚さの差を有し、前記スペ−サは、前記封止樹脂部から面方向へ延設されて端子をなす突出端子部を有することを特徴としている。
請求項１２記載の構成によれば請求項１又は１１において更に、ハイサイド側の半導体スイッチング素子が形成されたハイサイド側の半導体チップと、ロ−サイド側の半導体スイッチング素子が形成されたロ−サイド側の半導体チップとを有し、前記両半導体スイッチング素子を直列接続してなる単相インバ−タ回路を三個並列接続してなる請求項１又は請求項１１記載の半導体スイッチングモジュ−ルにおいて、それぞれ金属板からなるハイサイド板及びローサイド板と、Ｕ相、Ｖ相、Ｗ相のミドルサイド板とを有し、
Ｕ相の前記両半導体チップの出力側の主電極面は、互いに離れてＵ相の前記ミドルサイド板の内側主面に直接あるいは導電部材を介して接合され、Ｖ相の前記両半導体チップの出力側の主電極面は、互いに離れてＶ相の前記ミドルサイド板の内側主面に直接あるいは導電部材を介して接合され、Ｗ相の前記両半導体チップの出力側の主電極面は、互いに離れてＷ相の前記ミドルサイド板の内側主面に直接あるいは導電部材を介して接合され、
各相の前記ハイサイド側の半導体チップの高位電源側の主電極面は、前記ハイサイド板の内側主面に直接あるいは導電部材を介して接合され、各相の前記ロ−サイド側の半導体チップの低位電源側の主電極面は、前記ローサイド板の内側主面に直接あるいは導電部材を介して接合され、前記両半導体チップは、前記各相のミドルサイド板、ハイサイド板及びローサイド板の外主面を露出させてモ−ルドされる封止樹脂部により一体に被覆されていることを特徴としている。
【００３１】
本構成によれば、スペ−サ以外に合計５本のブスバ−状のハイサイド板、ローサイド板、ミドルサイド板を用いて三相インバ−タ回路を内蔵し、かつ、各半導体チップがマトリックス状に一定間隔で配置されたモジュ−ルを実現することができ、装置構成の格段の簡素化を図ることができ、かつ両面冷却により小型大出力化を実現することができる。
【発明の実施の形態】
本発明の半導体装置の好適な実施態様を図面を参照して以下説明する。
【００３２】
【実施例１】
図１は半導体スイッチングモジュ−ルの厚さ方向断面図を示し、図２はこの半導体スイッチングモジュ−ルを用いた半導体装置の厚さ方向断面図を示す。
（半導体スイッチングモジュ−ルの構成）
図１において、１はハイサイド板、２はローサイド板、２ａはスペ−サ、３はミドルサイド板、３ａはスペ−サ、４ａはハイサイド側の半導体チップ、４ｂはロ−サイド側の半導体チップ、５ははんだ層、６ａは制御電極端子、７ａ、７ｂはボンディングワイヤ、８は封止樹脂部、１０はローサイド板２の外主面、１１はハイサイド板１の外主面、１２はミドルサイド板３の外主面である。
【００３３】
ハイサイド板１、ローサイド板２、スペ−サ２ａ、ミドルサイド板３、スペ−サ３ａは、タングステン、モリブデン等で形成された金属平板からなるが、銅又はアルミ合金などで形成された金属平板で構成してもよい。
【００３４】
半導体チップ４ａは、ハイサイド板１の内主面とスペ−サ３ａの一対の主面の一方との間に介設されて、これら両者にはんだ層５により接合されている。スペ−サ３ａの一対の主面の他方は、ミドルサイド板３の内主面にはんだ接合されている。
【００３５】
半導体チップ４ｂは、ミドルサイド板３の内主面とスペ−サ２ａの一対の主面の一方との間に介設されて、これら両者にはんだ層５により接合されている。スペ−サ２ａの一対の主面の他方は、ローサイド板２の内主面にはんだ接合されている。
【００３６】
スペ−サ２ａ、３ａは、互いに厚さが異なる半導体チップ４ａ、４ｂの厚さの差を吸収する厚さの差を有し、これによりハイサイド板１の外主面と、ローサイド板２の外主面は同一高さとされている。
【００３７】
各板１〜３は、図１における紙面奥方向又は手前方向に延設されて外部ブスバ−（図示せず）に締結される突出端子部１０、２０、３０（図３、図４参照）を有している。図３は、スペ−サ２ａ、３ａと半導体チップ４ａ、４ｂとの接合前を示す分解図であり、図４は、スペ−サ２ａ、３ａと半導体チップ４ａ、４ｂとの接合後を示す分解図である。
【００３８】
なお、この実施例では、制御電極端子６ａは最初、各板１、３と一体に形成されており、ワイヤボンディング後又は樹脂モ−ルド後、各板１、３から切り離される。このような手法は通常のリ−ドフレ−ム樹脂モ−ルド技術において一般駅であるので詳細な説明は省略する。制御電極端子６ａは、１つの半導体チップについて５本図示しているが、この内訳はゲ−ト端子、ドレイン端子、カレントミラーセンス端子、及び半導体チップの温度を検出する温度検出端子２本である。センサ類が必要でなければ、最低限ゲ−ト端子とドレイン端子の２本あれば良い。
【００３９】
なお、各板１〜３は、スペ−サ２ａ、２ｂよりも幅広に形成されており、スペ−サ２ａ、２ｂの周縁より更に面方向外側にはみ出しているので、各板１〜３の内側の主面に端子の基部をそれぞれ接合し、面方向外側に突出させてもよい。
【００４０】
ボンディングワイヤ７ａ、７ｂは、半導体チップ４ａ、４ｂの制御電極をなすボンディングパッドと制御電極端子６ａとを接続し、制御電極端子６ａは面方向外側へ突出している。
【００４１】
封止樹脂部８は、たとえばエポキシモ−ルド樹脂であり、半導体チップ４ａ、４ｂをモ−ルドしている。封止樹脂部８は、各板１〜３及び半導体チップ４ａ、４ｂの側面を覆うが、各板１〜３の外主面１０〜１２は露出し、封止樹脂部８の厚さ方向）の端部は外主面１０〜１２よりも内側に制限されている。これにより、外主面１０〜１２は冷却部材の平坦な表面に容易に密着することができる。
【００４２】
はんだ層５は、ロー材や導電性接着剤などに置換することができ、また、スペ−サ２ａ、３ａと各板１〜３との接合もこれら導電接合材料を用いることができる。スペ−サ２ａ、３ａと各板１、３とを一体化してもよい。
【００４３】
半導体チップ４ａ、４ｂの制御電極と制御電極端子６ａとはボンディングワイヤ７ａ、７ｂによるワイヤボンディングの他、バンプ接合などを用いることもできることはもちろんである。また、図４では、ローサイド板、ハイサイド板を一主辺に、その他、ミドルサイド板、制御電極を対向辺に配置しているが、例えばローサイド板とミドルサイド板とを一辺に並べたり、ローサイド板とミドルサイド板ととの位置を変更したりするなどの変更は当然可能である。
【００４４】
（変形態様）
変形態様を図５に示す。
【００４５】
上記実施例１では、半導体チップ４ａ、４ｂはＭＯＳトランジスタとしたが、図５では、半導体チップ４ａ、４ｂとしてＩＧＢＴを採用する。ＩＧＢＴを誘導性負荷のスイッチング制御に用いる場合はフライホイルダイオ−ドを逆並列接続する必要が有るので各板１、３の間、及び、各板２、３の間にそれぞれフライホイルダイオ−ドが形成された半導体チップ４ｃ、４ｄが並列に介設されている。
【００４６】
また、図５では、ミドルサイド板３の突出端子部３０は、ハイサイド板１の突出端子部１０、ローサイド板２０の突出端子部２０と同一方向に引き出されている。
【００４７】
更に、この変形例では、制御電極端子６ａは、各板１〜３の突出端子部１０、２０、３０と反対側に突出している。これにより、配線引き回しや端子や配線間の電気絶縁が容易となる。制御電極端子６ａなどへのスイッチングノイズ侵入を低減することができる。
【００４８】
（半導体装置の構成）
この半導体スイッチングモジュ−ルを用いた半導体装置を図２に示す。
【００４９】
２１、２２は放熱フィンである冷却部材、２３は絶縁材、２４はシリコングリス層である。
【００５０】
絶縁材２３は各板１、２の外主面１０、１１に密着しており、両者の間にシリコングリス層を塗布、介在させてもよい。 冷却部材２１は、シリコングリス層２４を介して冷却部材２１、２２の平坦な接触面に密着している。冷却部材２１、２２の外主面には多数の凹凸部すなわちフィンが形成されている。
【００５１】
冷却部材２１、２２の図２中、左右両端部には貫通孔が形成され、これら貫通孔にスル−ボルト３１が嵌入され、ナット３２がスル−ボルト３１に螺着されて半導体スイッチングモジュ−ルはこれら一対の冷却部材２１、２２により挟圧されている。すなわち、この実施例によれば、冷却部材２１、２２は冷却部材としての役割と、冷却部材２１、２２を半導体スイッチングモジュ−ルに良好に密着させるためのボルト、ナットによる挟圧力を接触面に伝達する力伝達部材としての役割を果たしている。放熱部材２１、２２を例えば冷媒チュ−ブなどに変更することも可能である。
【００５２】
なお、図２では、冷却部材２１、２２は一相分の半導体スイッチングモジュ−ル（単相インバ−タ回路）のみ挟圧しているように図示されているが、図２の紙面の奥側に他の２つの相の半導体スイッチングモジュ−ルを同時に挟圧することができる。
【００５３】
【実施例２】
他の実施例の半導体スイッチングモジュ−ル及びそれを用いた三相インバ−タ回路構成用の半導体装置を図６を参照して説明する。図６はこの半導体装置の要部平面図である。
【００５４】
この実施例は、図５の単相インバ−タ回路を３相分、封止樹脂部８内に集積した三相インバ−タ回路内蔵の半導体スイッチングモジュ−ル３００の断面図を示す。
【００５５】
この実施例でも、半導体スイッチングモジュ−ル３００は、図２に示す冷却部材２１、２２で両側から挟圧されて１モジュ−ル三相インバ−タ回路をなす半導体装置を実現している。
【００５６】
なお、３ＵはＵ相のミドルサイド板、３ＶはＵ相のミドルサイド板、３ＷはＷ相のミドルサイド板であり、それぞれ平行に配置され、それらの一端は突出端子部３０Ｕ、３０Ｖ、３０Ｗとなっている。
【００５７】
４ａ、４ｂはＩＧＢＴが形成された半導体チップ、４ｃ、４ｄはフライホイルダイオ−ドが形成された半導体チップであり、前述の単相インバ−タ回路内蔵の半導体スイッチングモジュ−ルと同様に、各フライホイルダイオ−ドは各ＩＧＢＴに個別に逆並列接続されている。
【００５８】
なお、制御電極端子は図示されていないが、いわゆリ−ドフレ−ム製造プロセスにより形成できることは明らかである。
【図面の簡単な説明】
【図１】実施例１の半導体スイッチングモジュ−ルの一部破断断面図である。
【図２】図１に示す半導体スイッチングモジュ−ルを用いた半導体装置の一部破断断面図である。
【図３】図１に示す半導体スイッチングモジュ−ル製造におけるスペ−サと半導体チップとの接合前を示す分解図である。
【図４】図１に示す半導体スイッチングモジュ−ル製造におけるスペ−サと半導体チップとの接合後を示す分解図である。
【図５】図１に示す半導体スイッチングモジュ−ルの変形態様を示す分解図である。
【図６】実施例２の半導体装置の要部平面図である。
【図７】従来の両面冷却型半導体カ−ドモジュ−ルを示す図である。（ａ）はその平面図、（ｂ）はそのＧーＧ線矢視断面図、（ｃ）はそのＨーＨ線矢視断面図である。
【符号の説明】
１：ハイサイド板
２：ローサイド板
２ａ：スペ−サ
３：ミドルサイド板
３ａ：スペ−サ
４ａ：半導体チップ
４ｂ：半導体チップ
８：封止樹脂部[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor switching module suitable for downsizing a power three-phase inverter circuit and an improvement in a semiconductor device for a power three-phase inverter circuit using the same.
[0002]
[Prior art]
Japanese Patent Application Laid-Open No. 6-291223 proposes a semiconductor device that radiates heat from both sides of a semiconductor chip. This semiconductor device is shown in FIG. (A) is the top view, (b) is the GG arrow directional cross-sectional view, (c) is the HH directional arrow cross-sectional view.
[0003]
In this semiconductor device, a pair of heat sinks J2 and J3 also serving as heat sinks are thermally and electrically connected to both surfaces of the semiconductor chip J1, respectively, and the heat transfer members J2 and J3 are respectively power supply members to the semiconductor chip And a function as a heat sink and a heat transfer member. Hereinafter, this type of semiconductor device is also referred to as a double-sided cooling type semiconductor device.
[0004]
In this semiconductor device, at least the side surface of the semiconductor chip J1 is sealed with a resin J5 to form a card-like module (also referred to as a card module), and the anti-chip of the heat transfer members J2 and J3. The main surface on the side is exposed for cooling and serves as a main electrode terminal for supplying power to the main electrode of the semiconductor chip. The control terminal J4 for supplying power to the control electrode of the semiconductor chip is provided with sealing resin from the side surface of the card module. It penetrates and protrudes to the outside.
[0005]
J6 is an insulating plate, and J7 is a solder bump bonded to the bonding pad of the semiconductor chip.
[0006]
[Problems to be solved by the invention]
However, in the conventional double-sided cooling type semiconductor device described above, the heat transfer members J2 and J3 can be favorably dissipated from both sides of the semiconductor chip through the heat transfer members J2 and J3 by joining the two main surfaces of the semiconductor chip J1. However, since the heat transfer members J2 and J3 are joined to the main electrode surfaces individually formed on both main surfaces of the semiconductor chip, one or a plurality of simple transistors or diodes are built in the module. There is a problem that it is difficult to modularize a complicated power switching circuit.
[0007]
In particular, there is a three-phase inverter circuit for controlling an AC motor as an important application of this type of semiconductor switching module. In the above prior art, each of the six card modules is a bus bar or the like. It is necessary to connect, and the number of parts, an increase in the assembly process, and looseness of the assembly site are problems.
[0008]
The present invention has been made in view of the above problems, and an object of the present invention is to provide a semiconductor switching module and a semiconductor device using the semiconductor switching module that can compactly form a power three-phase inverter circuit.
[0009]
[Means for Solving the Problems]
The semiconductor switching module according to claim 1 includes a high-side semiconductor chip in which a high-side semiconductor switching element is formed and a low-side semiconductor chip in which a low-side semiconductor switching element is formed. A semiconductor switching module including an inverter circuit formed by connecting the two semiconductor switching elements in series;
Each has a high-side plate, a middle-side plate, and a low-side plate made of a metal plate, and the main electrode surfaces on the output side of the two semiconductor chips are separated from each other directly on the inner main surface of the middle-side plate or through a conductive member. The main electrode surface on the high power supply side of the high-side semiconductor chip is bonded to the inner main surface of the high-side plate directly or via a conductive member, and the low-side semiconductor chip on the low-side side is bonded to the low-side semiconductor chip. The main electrode surface on the power supply side is joined to the inner main surface of the low side plate directly or via a conductive member, and the two semiconductor chips expose the outer main surfaces of the middle side plate, the high side plate and the low side plate. Te mode - by the sealing resin portion that is field are integrally covered, the high-side plate (1), the low-side plate (2) and middle side plate (3), the sealing resin portion (8) Thickness of the semiconductor chip (4a, 4b) from the sealing resin portion (8) at the projecting terminal portion (10, 20, 30) projecting in the direction and the portion facing away from the semiconductor chip (4a, 4b) It has an outer main surface (10, 11, 12) that protrudes in the vertical direction and is exposed .
[0010]
According to this configuration, the single-phase inverter circuit can be made into a single module while maintaining the double-sided cooling function of the semiconductor chip. It is possible to reduce concerns about loosening of the parts.
[0011]
Moreover, since the middle side plate (the output electrode wiring of the single-phase inverter circuit or a part thereof) also serves as a common substrate for both semiconductor chips, a high-density arrangement of both semiconductor chips can be realized, and the number of wiring components It is possible to reduce the number of connections, the number of connection steps, and the wiring loss.
[0012]
According to a second aspect of the present invention, in the semiconductor switching module according to the first aspect, the outer main surfaces of the high side plate and the low side plate are substantially in the same plane.
[0013]
According to this configuration, the high-side plate and the low-side plate can be brought into close contact with the same plane of the same cooling member via the thin electrical insulating material, and good double-sided cooling can be achieved with a simple structure.
[0014]
According to the configuration of claim 3, in the semiconductor switching module according to claim 2, further, between one of the low side plate or the high side plate and one of the two semiconductor chips, and between the middle side plate and the A spacer having good thermal conductivity and good conductivity is interposed between the other of the two semiconductor chips, and the two spacers absorb the difference in thickness to absorb the difference in thickness between the two semiconductor chips. It is characterized by having.
[0015]
According to this configuration, since the difference in thickness between the two semiconductor chips can be absorbed by the spacer, the high side plate, the middle side plate, and the low side plate are made simple, and the high side plate and the low side plate are the same. It can be a member having a thickness.
[0016]
According to the configuration of claim 4, in the semiconductor switching module according to claim 3, the control electrodes of both the semiconductor chips are formed on the main surface on the spacer side of the semiconductor chip. Since an extra gap can be secured between the high side plate or the low side plate and the middle side plate by the amount of the spacer, for example, a connecting member for connecting the control electrode and the control electrode terminal of the semiconductor chip, for example, a bonder It is possible to secure the space for arranging the ding wires without difficulty.
[0017]
According to the configuration of claim 5, in the semiconductor switching module according to any one of claims 1 to 4, the outer main surfaces of the high side plate, the low side plate, and the middle side plate are further away from the semiconductor chip. The projecting terminal portion that is in close contact with the cooling member through the electrical insulating film at the site where the high-side plate, the low-side plate, and the middle-side plate extend from the sealing resin portion in a substantially plane direction to form a terminal. It is characterized by having.
[0018]
According to this configuration, these high-side plate, low-side plate and middle-side plate can thermally combine the semiconductor chip and the cooling member at the shortest distance and can also serve as terminals, respectively. A simple and highly reliable terminal structure can be realized.
[0019]
According to the structure of the sixth aspect, in the semiconductor switching module according to the third or fourth aspect, the spacer further includes a protruding terminal portion extending from the sealing resin portion in a substantially plane direction to form a terminal. It is characterized by having.
[0020]
According to this configuration, since the spacer protrudes from the sealing resin portion in the surface direction and serves as a terminal, a simple and highly reliable terminal structure can be realized.
[0021]
According to the configuration of claim 7, in the semiconductor switching module according to any one of claims 1 to 6, the high-side plate, the low-side plate, and the middle-side plate formed wider than the spacer. It has a main electrode terminal that is joined to the inner main surface and protrudes outward in the surface direction.
[0022]
In this way, it is possible to use an inexpensive terminal having an electric resistance much smaller than MO or W, such as copper, and a metal material having a linear expansion coefficient close to that of a semiconductor chip as a spacer or a middle side plate. Even when using, the shape processing becomes easy, and the material cost and the shape processing cost can be reduced.
[0023]
According to the configuration of claim 8, in the semiconductor switching module according to claims 4 and 7, the control electrode terminal that is electrically connected to the control electrodes of both the semiconductor chips and protrudes outward in the plane direction, It is characterized by projecting in a direction opposite to the main electrode terminal.
[0024]
According to this configuration, since the control electrode terminal and the main electrode terminal are projected to the opposite side, it is easy to ensure electrical insulation between the two terminals, and wiring (bus bar) can be easily routed.
[0025]
According to a ninth aspect of the present invention, in the semiconductor switching module according to the fourth and seventh aspects, the semiconductor chip is further separated from one of the high side plate and the low side plate and the middle side plate. It is characterized by comprising a switching transistor chip and a flywheel diode chip interposed in parallel.
[0026]
According to this configuration, each semiconductor chip has an IGBT (insulated gate bipolar transistor), a MOST (insulated gate transistor), a BPT (bipolar transistor) and a flywheel diode connected in parallel. Since it has a chip structure, it is possible to realize a cooling and a small single-phase high-current inverter circuit.
[0027]
Since the IGBT chip or BPT chip and the flywheel diode chip usually have different thicknesses, the difference in thickness between the chips is obtained by connecting a pair of spacers having different thicknesses between the high side plate and the middle side plate. It is preferable to interpose between the low side plate and the middle side plate.
[0028]
The configuration according to claim 10 is such that the outer main surfaces of the high side plate, the low side plate, and the middle side plate are in close contact with the cooling member through an electric insulating film at a portion facing away from the semiconductor chip, respectively. 10. The semiconductor device using a semiconductor switching module according to claim 1, wherein the member is pressed in the thickness direction with the semiconductor switching module interposed therebetween.
[0029]
According to this configuration, the high side plate, the low side plate, and the middle side plate are brought into close contact with each other by sandwiching the cooling members on both sides. That is, since both the cooling members also serve as the fastening members, the adhesion in the thickness direction between the components becomes good, and the vibration resistance and the like are improved.
[0030]
The semiconductor switching module according to claim 11 includes a high-side semiconductor chip in which a high-side semiconductor switching element is formed and a low-side semiconductor chip in which a low-side semiconductor switching element is formed. A semiconductor switching module including an inverter circuit formed by connecting the two semiconductor switching elements in series;
Each has a high-side plate, a middle-side plate, and a low-side plate made of a metal plate, and the main electrode surfaces on the output side of the two semiconductor chips are separated from each other directly on the inner main surface of the middle-side plate or through a conductive member. The main electrode surface on the high power supply side of the high-side semiconductor chip is bonded to the inner main surface of the high-side plate directly or via a conductive member, and the low-side semiconductor chip on the low-side side is bonded to the low-side semiconductor chip. The main electrode surface on the power supply side is joined to the inner main surface of the low side plate directly or via a conductive member, and the two semiconductor chips expose the outer main surfaces of the middle side plate, the high side plate and the low side plate. Te mode - by the sealing resin portion that is field are integrally covered, an outer main surface of the high-side plate and low-side plate, forms a same plane, of the low-side plate or a high-side plate A spacer having good thermal conductivity and good conductivity is interposed between the semiconductor chip and one of the two semiconductor chips and between the middle side plate and the other of the two semiconductor chips. Sa, the have a difference in thickness to absorb the difference in thickness of the two semiconductor chips, the space - Sa is the extended to the sealing resin portion or et plane direction protruding terminal portions forming the terminal It is characterized by having.
According to a twelfth aspect of the present invention, in the first or eleventh aspect, a high-side semiconductor chip on which a high-side semiconductor switching element is formed, and a low-side semiconductor switching element on which a low-side semiconductor switching element is formed. 12. The semiconductor switching module according to claim 1, comprising three single-phase inverter circuits connected in parallel, each having a semiconductor chip on a side side and connecting both semiconductor switching elements in series. , Each having a high side plate and a low side plate made of a metal plate, and a U-side, V-phase, and W-phase middle side plate,
The main electrode surfaces on the output side of the U-phase semiconductor chips are separated from each other and joined to the inner main surface of the U-phase middle side plate directly or via a conductive member. The main electrode surfaces on the side are separated from each other and joined to the inner main surface of the V-phase middle side plate directly or via a conductive member, and the main electrode surfaces on the output side of the W-phase semiconductor chips are separated from each other. And joined to the inner main surface of the W-phase middle side plate directly or through a conductive member,
The main electrode surface on the high power supply side of the high-side semiconductor chip of each phase is joined to the inner main surface of the high-side plate directly or via a conductive member, and the low-side semiconductor chip of each phase The main electrode surface on the lower power supply side is joined to the inner main surface of the low side plate directly or via a conductive member, and the two semiconductor chips are connected to the middle side plate, the high side plate and the low side plate of each phase. It is characterized in that it is integrally covered with a sealing resin portion that is molded by exposing the main surface.
[0031]
According to this configuration, in addition to the spacer, a total of five busbar-shaped high side plates, low side plates, and middle side plates are used to incorporate a three-phase inverter circuit, and each semiconductor chip is in a matrix form the module being arranged at regular intervals - can be realized le, it is possible to greatly simplify the device structure, and Ru can be made smaller large output by double-sided cooling.
DETAILED DESCRIPTION OF THE INVENTION
Preferred embodiments of the semiconductor device of the present invention will be described below with reference to the drawings.
[0032]
[Example 1]
FIG. 1 is a sectional view in the thickness direction of a semiconductor switching module, and FIG. 2 is a sectional view in the thickness direction of a semiconductor device using the semiconductor switching module.
(Configuration of semiconductor switching module)
In FIG. 1, 1 is a high side plate, 2 is a low side plate, 2a is a spacer, 3 is a middle side plate, 3a is a spacer, 4a is a semiconductor chip on the high side, and 4b is a semiconductor on the low side. Chip, 5 is a solder layer, 6a is a control electrode terminal, 7a and 7b are bonding wires, 8 is a sealing resin portion, 10 is an outer main surface of the low side plate 2, 11 is an outer main surface of the high side plate 1, and 12 is This is the outer main surface of the middle side plate 3.
[0033]
The high side plate 1, the low side plate 2, the spacer 2a, the middle side plate 3, and the spacer 3a are made of a metal flat plate made of tungsten, molybdenum or the like, but are made of copper or aluminum alloy. You may comprise.
[0034]
The semiconductor chip 4a is interposed between the inner main surface of the high side plate 1 and one of the pair of main surfaces of the spacer 3a, and is joined to both by a solder layer 5. The other of the pair of main surfaces of the spacer 3 a is soldered to the inner main surface of the middle side plate 3.
[0035]
The semiconductor chip 4b is interposed between the inner main surface of the middle side plate 3 and one of the pair of main surfaces of the spacer 2a, and is joined to both by a solder layer 5. The other of the pair of main surfaces of the spacer 2 a is soldered to the inner main surface of the low side plate 2.
[0036]
The spacers 2a and 3a have a thickness difference that absorbs the difference in thickness between the semiconductor chips 4a and 4b having different thicknesses, whereby the outer main surface of the high-side plate 1 and the low-side plate 2 The outer main surface has the same height.
[0037]
Each of the plates 1 to 3 has protruding terminal portions 10, 20, and 30 (see FIGS. 3 and 4) that extend in the back direction or the near side in FIG. 1 and are fastened to an external bus bar (not shown). Have. FIG. 3 is an exploded view showing before joining the spacers 2a, 3a and the semiconductor chips 4a, 4b. FIG. 4 is an exploded view showing after joining the spacers 2a, 3a and the semiconductor chips 4a, 4b. FIG.
[0038]
In this embodiment, the control electrode terminal 6a is formed integrally with the plates 1 and 3 at first, and is separated from the plates 1 and 3 after wire bonding or resin molding. Since such a method is a general station in the ordinary lead frame resin mold technology, detailed description thereof is omitted. Although five control electrode terminals 6a are shown for one semiconductor chip, the breakdown is a gate terminal, a drain terminal, a current mirror sense terminal, and two temperature detection terminals for detecting the temperature of the semiconductor chip. . If sensors are not required, at least two gate terminals, that is, a gate terminal and a drain terminal are sufficient.
[0039]
Each of the plates 1 to 3 is formed wider than the spacers 2a and 2b and protrudes further outward in the surface direction than the peripheral edges of the spacers 2a and 2b. The bases of the terminals may be joined to the main surfaces of the, and projected outward in the surface direction.
[0040]
The bonding wires 7a and 7b connect the bonding pads forming the control electrodes of the semiconductor chips 4a and 4b and the control electrode terminal 6a, and the control electrode terminal 6a protrudes outward in the surface direction.
[0041]
The sealing resin portion 8 is, for example, an epoxy mold resin and molds the semiconductor chips 4a and 4b. The sealing resin portion 8 covers the side surfaces of the plates 1 to 3 and the semiconductor chips 4a and 4b, but the outer main surfaces 10 to 12 of the plates 1 to 3 are exposed and the thickness direction of the sealing resin portion 8). Is limited to the inside of the outer main surfaces 10 to 12. Thereby, the outer main surfaces 10 to 12 can be easily adhered to the flat surface of the cooling member.
[0042]
The solder layer 5 can be replaced with a brazing material, a conductive adhesive, or the like, and these conductive bonding materials can also be used for bonding the spacers 2a, 3a and the plates 1 to 3. The spacers 2a and 3a and the plates 1 and 3 may be integrated.
[0043]
Of course, the control electrodes and the control electrode terminals 6a of the semiconductor chips 4a and 4b can use bump bonding or the like in addition to wire bonding using the bonding wires 7a and 7b. In FIG. 4, the low side plate and the high side plate are arranged on one main side, and in addition, the middle side plate and the control electrode are arranged on the opposite side. Of course, changes such as changing the positions of the low side plate and the middle side plate are possible.
[0044]
(Modification)
A modification is shown in FIG.
[0045]
In the first embodiment, the semiconductor chips 4a and 4b are MOS transistors. In FIG. 5, IGBTs are used as the semiconductor chips 4a and 4b. When the IGBT is used for inductive load switching control, the flywheel diodes need to be connected in reverse parallel, so that the flywheel diodes are connected between the plates 1 and 3 and between the plates 2 and 3, respectively. The semiconductor chips 4c and 4d on which are formed are interposed in parallel.
[0046]
In FIG. 5, the protruding terminal portion 30 of the middle side plate 3 is drawn out in the same direction as the protruding terminal portion 10 of the high side plate 1 and the protruding terminal portion 20 of the low side plate 20.
[0047]
Furthermore, in this modification, the control electrode terminal 6a protrudes on the opposite side to the protruding terminal portions 10, 20, and 30 of the plates 1 to 3. This facilitates wiring routing and electrical insulation between terminals and wiring. Switching noise intrusion into the control electrode terminal 6a and the like can be reduced.
[0048]
(Configuration of semiconductor device)
A semiconductor device using this semiconductor switching module is shown in FIG.
[0049]
21 and 22 are cooling members which are heat radiation fins, 23 is an insulating material, and 24 is a silicon grease layer.
[0050]
The insulating material 23 is in close contact with the outer main surfaces 10 and 11 of the plates 1 and 2, and a silicon grease layer may be applied and interposed between them. The cooling member 21 is in close contact with the flat contact surfaces of the cooling members 21 and 22 via the silicon grease layer 24. A large number of uneven portions, that is, fins are formed on the outer main surfaces of the cooling members 21 and 22.
[0051]
In FIG. 2, the cooling members 21 and 22 are formed with through holes at both left and right end portions thereof, through bolts 31 are fitted into the through holes, and nuts 32 are screwed into the through bolts 31 to switch the semiconductor switching module. Is sandwiched between the pair of cooling members 21 and 22. That is, according to this embodiment, the cooling members 21 and 22 serve as a cooling member, and the contact pressure by the bolts and nuts for bringing the cooling members 21 and 22 into good contact with the semiconductor switching module is applied to the contact surface. It plays a role as a force transmission member. It is also possible to change the heat radiating members 21 and 22 to, for example, a refrigerant tube.
[0052]
In FIG. 2, the cooling members 21 and 22 are illustrated as sandwiching only one phase of the semiconductor switching module (single-phase inverter circuit), but on the far side of the paper surface of FIG. 2. The other two phase semiconductor switching modules can be clamped simultaneously.
[0053]
[Example 2]
A semiconductor switching module according to another embodiment and a semiconductor device for a three-phase inverter circuit configuration using the same will be described with reference to FIG. FIG. 6 is a plan view of the main part of the semiconductor device.
[0054]
This embodiment shows a cross-sectional view of a semiconductor switching module 300 incorporating a three-phase inverter circuit in which three phases of the single-phase inverter circuit of FIG. 5 are integrated in the sealing resin portion 8.
[0055]
Also in this embodiment, the semiconductor switching module 300 realizes a semiconductor device which is sandwiched between the cooling members 21 and 22 shown in FIG. 2 to form a one-module three-phase inverter circuit.
[0056]
In addition, 3U is a U-phase middle side plate, 3V is a U-phase middle side plate, and 3W is a W-phase middle side plate, which are arranged in parallel, and one end of each of the protruding terminal portions 30U, 30V, 30W and It has become.
[0057]
4a and 4b are semiconductor chips on which IGBTs are formed, and 4c and 4d are semiconductor chips on which flywheel diodes are formed. Each of the semiconductor switching modules having a built-in single-phase inverter circuit, The flywheel diodes are individually connected in reverse parallel to each IGBT.
[0058]
Although the control electrode terminals are not shown, it is obvious that they can be formed by a so-called lead frame manufacturing process.
[Brief description of the drawings]
FIG. 1 is a partially cutaway sectional view of a semiconductor switching module according to a first embodiment.
2 is a partially cutaway sectional view of a semiconductor device using the semiconductor switching module shown in FIG.
FIG. 3 is an exploded view showing a state before joining a spacer and a semiconductor chip in manufacturing the semiconductor switching module shown in FIG. 1;
4 is an exploded view showing a state after joining a spacer and a semiconductor chip in manufacturing the semiconductor switching module shown in FIG. 1; FIG.
FIG. 5 is an exploded view showing a modification of the semiconductor switching module shown in FIG.
6 is a plan view of the principal part of the semiconductor device of Example 2. FIG.
FIG. 7 is a view showing a conventional double-sided cooling type semiconductor card module. (A) is the top view, (b) is the GG arrow directional cross-sectional view, (c) is the HH directional arrow cross-sectional view.
[Explanation of symbols]
1: High side plate 2: Low side plate 2a: Spacer 3: Middle side plate 3a: Spacer 4a: Semiconductor chip 4b: Semiconductor chip 8: Sealing resin portion

Claims (12)

ハイサイド側の半導体スイッチング素子が形成されたハイサイド側の半導体チップと、ロ−サイド側の半導体スイッチング素子が形成されたロ−サイド側の半導体チップとを有し、前記両半導体スイッチング素子を直列接続してなるインバ−タ回路を内蔵する半導体スイッチングモジュ−ルにおいて、
それぞれ金属板からなるハイサイド板、ミドルサイド板、ローサイド板を有し、
前記両半導体チップの出力側の主電極面は、互いに離れて前記ミドルサイド板の内側主面に直接あるいは導電部材を介して接合され、
前記ハイサイド側の半導体チップの高位電源側の主電極面は、前記ハイサイド板の内側主面に直接あるいは導電部材を介して接合され、
前記ロ−サイド側の半導体チップの低位電源側の主電極面は、前記ローサイド板の内側主面に直接あるいは導電部材を介して接合され、
前記両半導体チップは、前記ミドルサイド板、ハイサイド板及びローサイド板の外主面を露出させてモ−ルドされる封止樹脂部により一体に被覆され、
前記ハイサイド板（１）、ローサイド板（２）及びミドルサイド板（３）は、前記封止樹脂部（８）から面方向に突出する突出端子部（１０、２０、３０）と、前記半導体チップ（４ａ、４ｂ）に背向する部位にて前記封止樹脂部（８）から前記半導体チップ（４ａ、４ｂ）の厚さ方向に突出して露出する外主面（１０、１１、１２）とを有することを特徴とする半導体スイッチングモジュ−ル。A high-side semiconductor chip on which a high-side semiconductor switching element is formed; and a low-side semiconductor chip on which a low-side semiconductor switching element is formed. In a semiconductor switching module containing a connected inverter circuit,
Each has a high side plate, a middle side plate, and a low side plate made of a metal plate,
The main electrode surfaces on the output side of the two semiconductor chips are joined to the inner main surface of the middle side plate away from each other directly or via a conductive member,
The main electrode surface on the high power supply side of the high-side semiconductor chip is joined to the inner main surface of the high-side plate directly or via a conductive member,
The main electrode surface on the lower power supply side of the low-side semiconductor chip is joined to the inner main surface of the low-side plate directly or via a conductive member,
The two semiconductor chips are integrally covered with a sealing resin portion that is molded by exposing the outer main surfaces of the middle side plate, the high side plate, and the low side plate,
The high-side plate (1), the low-side plate (2), and the middle-side plate (3) include protruding terminal portions (10, 20, 30) protruding in the surface direction from the sealing resin portion (8), and the semiconductor An outer main surface (10, 11, 12) that protrudes in the thickness direction of the semiconductor chip (4a, 4b) from the sealing resin portion (8) at a portion facing away from the chip (4a, 4b); A semiconductor switching module comprising: 請求項１記載の半導体スイッチングモジュ−ルにおいて、
前記ハイサイド板及びローサイド板の外主面は、同一平面をなすことを特徴とする半導体スイッチングモジュ−ル。The semiconductor switching module according to claim 1, wherein
2. A semiconductor switching module according to claim 1, wherein outer main surfaces of the high side plate and the low side plate are coplanar. 請求項２記載の半導体スイッチングモジュ−ルにおいて、
前記ローサイド板又はハイサイド板の一方と前記両半導体チップの一方との間、及び、前記ミドルサイド板と前記両半導体チップの他方との間に良熱伝導性かつ良電導性のスペ−サが介設され、
前記両スペ−サは、前記両半導体チップの厚さの差を吸収する厚さの差を有することを特徴とする半導体スイッチングモジュ−ル。The semiconductor switching module according to claim 2, wherein
Spacers with good thermal conductivity and good conductivity are provided between one of the low side plate or the high side plate and one of the two semiconductor chips and between the middle side plate and the other of the two semiconductor chips. Intervened,
2. The semiconductor switching module according to claim 1, wherein the two spacers have a thickness difference that absorbs a difference in thickness between the two semiconductor chips. 請求項３記載の半導体スイッチングモジュ−ルにおいて、
前記両半導体チップの制御電極は、前記半導体チップのスペ−サ側の主面に形成されていることを特徴とする半導体スイッチングモジュ−ル。The semiconductor switching module according to claim 3, wherein
The semiconductor switching module according to claim 1, wherein the control electrodes of the two semiconductor chips are formed on a spacer-side main surface of the semiconductor chip. 請求項１乃至４のいずれか記載の半導体スイッチングモジュ−ルにおいて、
前記ハイサイド板、ローサイド板及びミドルサイド板の前記外主面は、前記半導体チップに背向する部位にて電気絶縁膜を介してそれぞれ冷却部材に密着し、
前記ハイサイド板、ローサイド板及びミドルサイド板は、前記封止樹脂部から略面方向へ延設されて端子をなす前記突出端子部を有することを特徴とする半導体スイッチングモジュ−ル。The semiconductor switching module according to any one of claims 1 to 4,
The outer main surfaces of the high-side plate, the low-side plate, and the middle-side plate are in close contact with the cooling member through an electrical insulating film at a portion facing away from the semiconductor chip,
The high-side plate, the low-side plate, and the middle-side plate have the protruding terminal portion that extends from the sealing resin portion in a substantially planar direction to form a terminal, and is a semiconductor switching module. 請求項３又は４記載の半導体スイッチングモジュ−ルにおいて、
前記スペ−サは、前記封止樹脂部から略面方向へ延設されて端子をなす突出端子部を有することを特徴とする半導体スイッチングモジュ−ル。The semiconductor switching module according to claim 3 or 4,
2. The semiconductor switching module according to claim 1, wherein the spacer has a projecting terminal portion extending from the sealing resin portion in a substantially plane direction to form a terminal. 請求項１乃至６のいずれか記載の半導体スイッチングモジュ−ルにおいて、
前記スペ−サよりも幅広に形成された前記ハイサイド板、ローサイド板及びミドルサイド板の内側主面に接合されて面方向外側へ突出する主電極端子を有することを特徴とする半導体スイッチングモジュ−ル。The semiconductor switching module according to any one of claims 1 to 6,
A semiconductor switching module comprising: main electrode terminals that are joined to inner main surfaces of the high-side plate, the low-side plate, and the middle-side plate that are formed wider than the spacer and project outward in the surface direction. Le. 請求項４及び７記載の半導体スイッチングモジュ−ルにおいて、
前記両半導体チップの制御電極に電気的に接続されて面方向外部に突出する制御電極端子は、前記主電極端子と反対方向に突設されることを特徴とする半導体スイッチングモジュ−ル。The semiconductor switching module according to claim 4 and 7,
2. A semiconductor switching module according to claim 1, wherein the control electrode terminals electrically connected to the control electrodes of the two semiconductor chips and projecting outward in the surface direction are projected in the opposite direction to the main electrode terminals. 請求項４及び７記載の半導体スイッチングモジュ−ルにおいて、
前記半導体チップは、前記ハイサイド板及びローサイド板の一方と前記ミドルサイド板との間に互いに離れて並列に介設されるスイッチングトランジスタチップ及びフライホイルダイオ−ドチップからなることを特徴とする半導体スイッチングモジュ−ル。The semiconductor switching module according to claim 4 and 7,
The semiconductor chip comprises a switching transistor chip and a flywheel diode chip that are disposed in parallel and spaced apart from each other between one of the high side plate and the low side plate and the middle side plate. Module. 前記ハイサイド板、ローサイド板及びミドルサイド板の前記外主面は、前記半導体チップに背向する部位にて電気絶縁膜を介してそれぞれ冷却部材に密着し、
前記冷却部材は、前記半導体スイッチングモジュ−ルを挟んで厚さ方向に挟圧されることを特徴とする請求項１乃至９のいずれか記載の半導体スイッチングモジュ−ルを用いる半導体装置。The outer main surfaces of the high-side plate, the low-side plate, and the middle-side plate are in close contact with the cooling member through an electrical insulating film at a portion facing away from the semiconductor chip,
10. The semiconductor device using a semiconductor switching module according to claim 1, wherein the cooling member is pressed in the thickness direction with the semiconductor switching module interposed therebetween. ハイサイド側の半導体スイッチング素子が形成されたハイサイド側の半導体チップと、ロ−サイド側の半導体スイッチング素子が形成されたロ−サイド側の半導体チップとを有し、前記両半導体スイッチング素子を直列接続してなるインバ−タ回路を内蔵する半導体スイッチングモジュ−ルにおいて、
それぞれ金属板からなるハイサイド板、ミドルサイド板、ローサイド板を有し、
前記両半導体チップの出力側の主電極面は、互いに離れて前記ミドルサイド板の内側主面に直接あるいは導電部材を介して接合され、
前記ハイサイド側の半導体チップの高位電源側の主電極面は、前記ハイサイド板の内側主面に直接あるいは導電部材を介して接合され、
前記ロ−サイド側の半導体チップの低位電源側の主電極面は、前記ローサイド板の内側主面に直接あるいは導電部材を介して接合され、
前記両半導体チップは、前記ミドルサイド板、ハイサイド板及びローサイド板の外主面を露出させてモ−ルドされる封止樹脂部により一体に被覆され、
前記ハイサイド板及びローサイド板の外主面は、同一平面をなし、
前記ローサイド板又はハイサイド板の一方と前記両半導体チップの一方との間、及び、前記ミドルサイド板と前記両半導体チップの他方との間に良熱伝導性かつ良電導性のスペ−サが介設され、
前記両スペ−サは、前記両半導体チップの厚さの差を吸収する厚さの差を有し、
前記スペ−サは、前記封止樹脂部から面方向へ延設されて端子をなす突出端子部を有することを特徴とする半導体スイッチングモジュ−ル。A high-side semiconductor chip on which a high-side semiconductor switching element is formed; and a low-side semiconductor chip on which a low-side semiconductor switching element is formed. In a semiconductor switching module containing a connected inverter circuit,
Each has a high side plate, a middle side plate, and a low side plate made of a metal plate,
The main electrode surfaces on the output side of the two semiconductor chips are joined to the inner main surface of the middle side plate away from each other directly or via a conductive member,
The main electrode surface on the high power supply side of the high-side semiconductor chip is joined to the inner main surface of the high-side plate directly or via a conductive member,
The main electrode surface on the lower power supply side of the low-side semiconductor chip is joined to the inner main surface of the low-side plate directly or via a conductive member,
The two semiconductor chips are integrally covered with a sealing resin portion that is molded by exposing the outer main surfaces of the middle side plate, the high side plate, and the low side plate,
The outer major surface of the high-side plate and low-side plate, forms a same plane,
Spacers with good thermal conductivity and good conductivity are provided between one of the low side plate or the high side plate and one of the two semiconductor chips and between the middle side plate and the other of the two semiconductor chips. Intervened,
The spacers have a thickness difference that absorbs a difference in thickness between the semiconductor chips.
The space - Sa, the semiconductor switching module and having a projecting terminal portion said extending into the sealing resin portion or et plane direction forming a terminal - le. ハイサイド側の半導体スイッチング素子が形成されたハイサイド側の半導体チップと、ロ−サイド側の半導体スイッチング素子が形成されたロ−サイド側の半導体チップとを有し、前記両半導体スイッチング素子を直列接続してなる単相インバ−タ回路を三個並列接続してなる請求項１又は請求項１１記載の半導体スイッチングモジュ−ルにおいて、
それぞれ金属板からなるハイサイド板及びローサイド板と、Ｕ相、Ｖ相、Ｗ相のミドルサイド板とを有し、
Ｕ相の前記両半導体チップの出力側の主電極面は、互いに離れてＵ相の前記ミドルサイド板の内側主面に直接あるいは導電部材を介して接合され、
Ｖ相の前記両半導体チップの出力側の主電極面は、互いに離れてＶ相の前記ミドルサイド板の内側主面に直接あるいは導電部材を介して接合され、
Ｗ相の前記両半導体チップの出力側の主電極面は、互いに離れてＷ相の前記ミドルサイド板の内側主面に直接あるいは導電部材を介して接合され、
各相の前記ハイサイド側の半導体チップの高位電源側の主電極面は、前記ハイサイド板の内側主面に直接あるいは導電部材を介して接合され、
各相の前記ロ−サイド側の半導体チップの低位電源側の主電極面は、前記ローサイド板の内側主面に直接あるいは導電部材を介して接合され、
前記両半導体チップは、前記各相のミドルサイド板、ハイサイド板及びローサイド板の外主面を露出させてモ−ルドされる封止樹脂部により一体に被覆されていることを特徴とする半導体スイッチングモジュ−ル。A high-side semiconductor chip on which a high-side semiconductor switching element is formed; and a low-side semiconductor chip on which a low-side semiconductor switching element is formed. The semiconductor switching module according to claim 1 or 11, wherein three connected single-phase inverter circuits are connected in parallel.
Each having a high side plate and a low side plate made of a metal plate, and a U-side, V-phase, and W-phase middle side plate,
The main electrode surfaces on the output side of the U-phase semiconductor chips are bonded to the inner main surface of the U-phase middle side plate directly or via a conductive member,
The main electrode surfaces on the output side of the V-phase semiconductor chips are separated from each other and joined to the inner main surface of the V-phase middle side plate directly or via a conductive member,
The main electrode surfaces on the output side of the W-phase semiconductor chips are separated from each other and joined to the inner main surface of the W-phase middle side plate directly or via a conductive member,
The main electrode surface on the high power supply side of the high-side semiconductor chip of each phase is joined directly or via a conductive member to the inner main surface of the high-side plate,
The main electrode surface on the low power supply side of the semiconductor chip on the low side of each phase is joined to the inner main surface of the low side plate directly or via a conductive member,
The semiconductor chips are integrally covered with a sealing resin portion which is molded by exposing the outer main surfaces of the middle side plate, high side plate and low side plate of each phase. Switching module.
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