JP6047599B2 - Semiconductor module and power conversion device including the same - Google Patents

Description

  The present invention relates to a power conversion device including an inverter circuit.

  For example, a cooling structure shown in Patent Document 1 has been proposed as a conventional technique intended to efficiently transfer heat from a semiconductor module to a cooler to enhance heat dissipation. According to Patent Document 1, a semiconductor module is inserted into a module insertion hole formed in a cooler, and heat is radiated from a contact surface with the module insertion hole. It is disclosed that a soft metal layer is coated on the contact surface, and heat is radiated to the cooler through the soft metal layer.

  In addition, as a conventional technique intended to achieve both cooling efficiency and assemblability of a semiconductor element used in an inverter, for example, an inverter device shown in Patent Document 2 has been proposed. According to Patent Document 2, a housing portion that houses a power card in which both sides of a semiconductor element are sandwiched between heat sinks and a circulation path portion that circulates a cooling medium around the power card are formed. It is disclosed that the gap is filled with an insulating resin and the power card is fixed by curing the insulating resin.

  Moreover, the prior art of the cooling structure which aimed at the improvement of the cooling capability which reduced the burden of the assembly operation of a semiconductor module is proposed by patent document 3, for example. According to this Patent Document 3, a semiconductor module is accommodated therein, a block having heat radiation surfaces for radiating semiconductor generated heat is provided on the front surface and the back surface, and the block is inserted into a cooling water passage formed inside the case. Discloses that the front and back of the block face the cooling water passage.

  Moreover, the prior art of the cooling structure which can cool both surfaces of a semiconductor module and a smoothing capacitor is proposed by patent document 4, for example. According to Patent Document 4, semiconductor modules are installed on both sides of a smoothing capacitor, flat refrigerant tubes are bent in a zigzag shape, and a refrigerant flow path is formed along both sides of the semiconductor module and the smoothing capacitor. It is disclosed to realize a high heat dissipation capability without any problems.

JP 2005-175163 A JP 2005-237141 A JP 2006-202899 A JP 2001-352023 A

  2. Description of the Related Art In recent years, for example, in automobiles, the in-vehicle systems of vehicles, including vehicle drive systems, are being electrified. However, in the in-vehicle system electrification, a new addition of an electric machine that drives a driven body and a power conversion device that controls driving of the rotating electrical machine by controlling power supplied from the in-vehicle power source to the rotating electrical machine or the conventional It is necessary to replace the system components.

  For example, in an automobile, the power conversion device converts DC power supplied from an in-vehicle power source into AC power to drive the rotating electric machine, or direct current AC for supplying AC power generated by the rotating electric machine to the in-vehicle power source. It has a function to convert to electric power. Although the amount of power converted by the power conversion device tends to increase, since the whole automobile is in the direction of miniaturization and weight reduction, the increase in size and weight of the power conversion device is suppressed. In-vehicle power converters are required to be used in an environment with a large temperature change compared to industrial use, etc., and are comparatively small and comparatively capable of maintaining high reliability while placed in a high temperature environment. There is a demand for a power conversion device that can convert a large amount of power.

  The power conversion device includes an inverter circuit, and power conversion between DC power and AC power is performed by the operation of the inverter circuit. In order to perform this power conversion, it is necessary for the power semiconductor constituting the inverter circuit to repeat the switching operation (switching operation) between the cutoff state and the conduction state. During this switching operation, a large amount of heat is generated in the power semiconductor. The temperature of the semiconductor chip rises due to the heat generated during the switching operation of the semiconductor chip that is the power semiconductor of the inverter circuit. For this reason, it is an important subject to suppress this temperature rise.

  When the power to be converted increases, the amount of heat generated by the semiconductor chip increases, and as a countermeasure against this, it is necessary to increase the size of the semiconductor chip and the number of semiconductor chips used, resulting in an increase in the size of the power conversion device. As a method for suppressing such an increase in the size of the power converter, it is conceivable to improve the cooling efficiency of the semiconductor chip.

  Therefore, for example, Patent Documents 1 to 3 are proposals intended to improve the cooling efficiency of the semiconductor chip. Although it is clear that an improvement in the cooling efficiency of the semiconductor chip leads to a reduction in the size of the semiconductor chip, it is not always possible to suppress an increase in the size of the entire power conversion device. For example, if the improvement for improving the cooling efficiency of the semiconductor chip is performed, the structure of the entire power conversion device may be complicated as a result, and the semiconductor chip can be reduced in size. If you look at it, it may happen that it cannot be downsized too much.

  Therefore, in order to suppress the enlargement of the entire power conversion device, it is necessary to improve the cooling efficiency of the semiconductor chip in consideration of the entire power conversion device, and to suppress the electrical or mechanical complication of the entire power conversion device as much as possible. is necessary. Therefore, electrical complication is caused by complication of electrical wiring between a semiconductor module incorporating a semiconductor chip, a capacitor module, a driver board, and an AC connector, for example. Further, the mechanical complexity is caused by the complexity of the mounting method of the semiconductor module on the water channel housing and the mounting method of the capacitor module.

  In the known techniques described in Patent Documents 1 to 3, it cannot be said that sufficient consideration is given to the miniaturization of the entire power conversion device, and there is no specific disclosure about the arrangement of the capacitor modules and the cooling structure. It is enough. Moreover, although the said patent document 4 is disclosing the arrangement | positioning structure which considered the cooling of the smoothing capacitor in addition to the cooling of a semiconductor module, it is a thing of the system cooled with the refrigerant | coolant tube connected to the refrigerant | coolant piping of an external refrigeration cycle apparatus. However, the cooling method is different from the water cooling method, and further, there is a lack of consideration for the related arrangement with other components such as a circuit board connected to the semiconductor module, and there is a problem in downsizing the entire device. .

  An object of the present invention is to provide a technique that mainly leads to miniaturization of the entire power conversion device. Furthermore, the power conversion device according to the embodiment of the present invention described below is not only a miniaturization technique, but also improves the reliability and productivity necessary for commercialization and increases the cooling efficiency. It aims at providing the power converter device which ensures the insulation between a terminal and a negative electrode terminal.

In order to solve the above problems, a power converter according to an embodiment of the present invention includes, for example, the following power semiconductor module.

First and second power semiconductor elements that are electrically connected in series to form an upper and lower arm series circuit, first and second DC terminals that supply DC power to the upper and lower arm series circuit, and the first The first power semiconductor element is joined to the first power semiconductor element, and the second power semiconductor element is joined to the second direct current terminal. A second conductor plate for transmitting a current flowing through the terminal to the second power semiconductor element, wherein the first power semiconductor element is electrically connected in parallel to the first switching element and the first diode element. The second power semiconductor element is configured to include a second switching element and a second diode element that are electrically connected in parallel, and the first and second DC terminals are other Face of Each of the first and second DC terminals when viewed from a direction perpendicular to the main surface, the main surface having a wider width and a side surface narrower than the main surface. The first and second DC terminals are arranged so that the principal surfaces of each other do not overlap each other, and the first DC terminal overlaps a row in which the first switching element and the first diode element are arranged. The second DC terminal is arranged between a column in which the first switching element and the first diode element are arranged and a column in which the second switching element and the second diode element are arranged. Power semiconductor module placed in.

Alternatively, the first and second power semiconductor elements that are electrically connected in series to form the upper and lower arm series circuit, and the first and second DC terminals that supply DC power to the upper and lower arm series circuit, A first power semiconductor element is joined, a first conductor plate for transmitting a current flowing through the first DC terminal to the first power semiconductor element, and the second power semiconductor element are joined, and the second power semiconductor element is joined. A second conductor plate for transmitting a current flowing through the direct current terminal to the second power semiconductor element, wherein the first power semiconductor element is electrically connected in parallel with the first switching element and the first power element. The second power semiconductor element is configured to include a second switching element and a second diode element that are electrically connected in parallel, and the first and second DC terminals are configured to include a diode element. When having a main surface wider than the other surface and a side surface narrower than the main surface, respectively, when viewed from a direction perpendicular to the main surface of the first and second DC terminals The first and second DC terminals are arranged so that the principal surfaces of each other do not overlap each other, and the first DC terminal has a region where the first power semiconductor element is arranged in the first And the second DC terminal is formed on a region extending in a direction perpendicular to the direction in which the second power semiconductor element is disposed, and the second DC terminal is connected to the region in which the first power semiconductor element is disposed and the second power semiconductor element. The power semiconductor module formed on the area | region which extended the area | region between the area | region where a power semiconductor element is arrange | positioned in the direction perpendicular | vertical with respect to the arrangement direction of the said 1st and 2nd power semiconductor element.

Alternatively, the first and second power semiconductor elements that are electrically connected in series to form the upper and lower arm series circuit, and the first and second DC terminals that supply DC power to the upper and lower arm series circuit, A first power semiconductor element is joined, a first conductor plate for transmitting a current flowing through the first DC terminal to the first power semiconductor element, and the second power semiconductor element are joined, and the second power semiconductor element is joined. A second conductor plate for transmitting a current flowing through the direct current terminal to the second power semiconductor element, wherein the first power semiconductor element is electrically connected in parallel with the first switching element and the first power element. The second power semiconductor element is configured to include a second switching element and a second diode element that are electrically connected in parallel, and the first and second DC terminals are configured to include a diode element. When having a main surface wider than the other surface and a side surface narrower than the main surface, respectively, when viewed from a direction perpendicular to the main surface of the first and second DC terminals The connecting portion between the first DC terminal and the first conductor plate is perpendicular to the arrangement direction of the first and second power semiconductor elements in the region where the first power semiconductor element is arranged. The connection portion between the second DC terminal and the second conductor plate is formed on a region extending in any direction, and the region where the first power semiconductor element is disposed and the second power semiconductor element A power semiconductor module formed on a region extending in a direction perpendicular to the arrangement direction of the first and second power semiconductor elements with a region between the first and second power semiconductor elements.

Alternatively, the first and second power semiconductor elements that are electrically connected in series to form the upper and lower arm series circuit, and the first and second DC terminals that supply DC power to the upper and lower arm series circuit, A first power semiconductor element is joined, a first conductor plate for transmitting a current flowing through the first DC terminal to the first power semiconductor element, and the second power semiconductor element are joined, and the second power semiconductor element is joined. A second conductor plate for transmitting a current flowing through the direct current terminal to the second power semiconductor element, wherein the first power semiconductor element is electrically connected in parallel with the first switching element and the first power element. The second power semiconductor element is configured to include a second switching element and a second diode element that are electrically connected in parallel, and the first and second DC terminals are configured to include a diode element. When having a main surface wider than the other surface and a side surface narrower than the main surface, respectively, when viewed from a direction perpendicular to the main surface of the first and second DC terminals The first DC terminal is disposed on a region obtained by extending a region in which the first power semiconductor element is disposed in a direction perpendicular to a direction in which the first and second power semiconductor elements are disposed; The second DC terminal has the first DC terminal extending beyond a region in which the second power semiconductor element is disposed in a direction perpendicular to a direction in which the first and second power semiconductor elements are disposed. A power semiconductor module disposed on a side where a power semiconductor element is disposed.

  ADVANTAGE OF THE INVENTION According to this invention, it can contribute to size reduction of a power semiconductor module and a power converter device, suppressing the fall of the reliability required for commercialization, or productivity.

It is a figure which shows the control block of a hybrid vehicle. The figure which shows the circuit structure of the electric motor system for a vehicle drive provided with the inverter apparatus containing an upper and lower arm series circuit and a control part, the power converter device which consists of the capacitor | condenser connected to the direct current | flow side of an inverter apparatus, a battery, and a motor generator. It is. It is a figure which shows the circuit structure of the power converter device which uses two upper-lower arm series circuits for each phase alternating current output to a motor generator. It is a perspective view which shows the external appearance of the whole structure in the power converter device which concerns on embodiment of this invention. It is the perspective view which decomposed | disassembled the whole structure of the power converter device which concerns on embodiment of this invention. It is the top view which removed the upper case in the whole structure of the power converter device which concerns on embodiment of this invention. FIG. 6 is an exploded view showing an arrangement configuration of semiconductor modules in the power conversion device according to the embodiment of the present invention, in which the upper case, the control board, the driver board, and the AC connector are removed from the overall configuration of the power conversion device shown in FIG. 5. is there. It is a perspective view of the electric power system around the semiconductor module which attached the alternating current connector and the direct current connector with respect to the exploded view shown in FIG. It is an exploded view of the electric power system around the semiconductor module shown in FIG. It is sectional drawing which looked at the arrangement configuration of the semiconductor module shown in FIG. 7 from the flow direction of the cooling water. It is sectional drawing which removed the upper case from the whole structure of the power converter device which concerns on this embodiment, and was seen from the flow direction of the cooling water. It is sectional drawing which looked at the semiconductor module regarding this embodiment, a capacitor module, and a cooling water channel from the upper part. It is a perspective view which shows the external appearance of the whole structure of the semiconductor module in the power converter device which concerns on embodiment of this invention. It is sectional drawing of the semiconductor module regarding this embodiment, and is a figure which shows the sectional structure of the AA line shown in FIG. It is the perspective view which decomposed | disassembled the whole structure of the semiconductor module regarding this embodiment. It is a figure which shows the cross-section of the BB line shown in FIG. It is an exploded view which shows the structure of the internal arrangement | positioning of the upper-lower arm series circuit in the semiconductor module regarding this embodiment. It is a figure which shows the arrangement structure of the upper and lower arm series circuit arrange | positioned at the radiation fin (A side) in the semiconductor module regarding this embodiment. It is a figure which shows the joining relationship of each component arrange | positioned at the radiation fin (A side) in a semiconductor module. It is a figure which shows the joining relationship of each component arrange | positioned at the radiation fin (B side) in a semiconductor module. It is a figure which shows the structure of the terminal connection between the semiconductor module and capacitor | condenser module regarding this embodiment. It is a layout on the structure explaining the reduction | decrease of the wiring inductance in the semiconductor module and capacitor | condenser module regarding this embodiment. It is a layout diagram on an equivalent circuit for explaining the reduction of wiring inductance in the semiconductor module and the capacitor module according to the present embodiment. It is a figure which shows the other structural example about the arrangement | sequence of the positive electrode terminal and negative electrode terminal of the semiconductor module regarding this embodiment. It is function explanatory drawing which shows one structural example of the water channel structure regarding this embodiment, and the arrangement structure of several semiconductor modules. It is function explanatory drawing which shows the other structural example of the water channel structure regarding this embodiment, and the arrangement structure of a several semiconductor module.

 A power conversion device according to an embodiment of the present invention will be described in detail below with reference to the drawings. First, a technical problem to be improved and improved in the power conversion device according to the present embodiment and this technical problem are first described. An outline of a technique for solving the problem will be described.

  The power conversion device according to the embodiment of the present invention considers the following technical viewpoint as a product that meets the needs of the world, and one of the viewpoints is miniaturization technology, that is, accompanying an increase in power to be converted. This is a technology that suppresses the enlargement of the power converter as much as possible. Furthermore, another viewpoint is a technique related to improvement of the reliability of the power conversion apparatus, and still another viewpoint is a technique related to improvement of productivity of the power conversion apparatus. And the power converter device which concerns on embodiment of this invention is commercialized based on the viewpoint which combined the above-mentioned three viewpoints, and also these viewpoints, The characteristic of the power converter device in each viewpoint is shown. Listed below and outlined.

(1) Description of Miniaturization Technology In the power conversion device according to this embodiment, a series circuit of upper and lower arms of an inverter is housed in a semiconductor module having cooling metals on both sides, and the semiconductor module is inserted into cooling water. It has a structure that fits (adopts slot-in structure) and cools the cooling metal on both sides with cooling water.

  With this structure, the cooling efficiency is improved, and the semiconductor module can be miniaturized. Further, as a specific structure, an insulating member such as an insulating sheet or a ceramic plate is provided inside the cooling metal on both sides, and a series circuit of upper and lower arms is provided between the conductor metals fixed to each insulating member. The upper and lower arm semiconductor chips are sandwiched. With this structure, good heat conduction paths can be formed between both surfaces of the upper and lower semiconductor chips and the cooling metal, and the cooling efficiency of the semiconductor module is greatly improved.

  In addition, the semiconductor chip (IGBT chip and diode chip) of the upper arm of the semiconductor module and the semiconductor chip of the lower arm of the semiconductor module are arranged with their positions shifted with respect to the direction of the coolant flow, and the IGBT of the upper arm. By arranging the chip and the IGBT chip of the lower arm on the same horizontal plane of the cooling water flow, the vertical width occupied by the fin-shaped cooling metal for the IGBT chip cooling of the upper and lower arm series circuit becomes larger than that of the diode chip. Thus, the IGBT chip having a larger heat dissipation can be effectively cooled. That is, in order to cool the IGBT chips of the upper and lower arms, the amount of cooling water is increased as compared with the diode chip, which leads to a significant improvement in cooling efficiency.

  Both surfaces of the semiconductor chip of the upper arm and the lower arm are respectively connected to a conductor metal (conductor plate) inside the cooling metal, and the conductor metal is fixed to the cooling metal via an insulating member. The thickness of the insulating member is thin, for example, 350 μm or less in the case of a ceramic plate, and is further thinner from 50 μm to 200 μm in the case of an insulating sheet. Here, the insulating sheet is, for example, a thermocompression-bonded resin sheet. Since the conductor metal is provided close to the cooling metal, the eddy current due to the current flowing through the conductor metal flows through the cooling metal, and the eddy current generates heat, but these heat is efficiently transferred to the cooling water.

  Further, the inductance in the semiconductor module is reduced by the eddy current. The inductance reduction can reduce the jump of voltage due to the switching operation of the semiconductor chips of the upper arm and the lower arm, leading to an improvement in reliability. In addition, the suppression of the voltage rise enables the switching operation of the semiconductor chip of the upper arm and the lower arm to be speeded up, the time for the switching operation can be shortened, and the amount of heat generated by the switching operation is reduced.

  Furthermore, the capacitor module and the semiconductor module are accommodated in a water channel housing in substantially the same plane space, and the semiconductor module is arranged on both sides of the capacitor module (adopting a sandwich structure), thereby reducing the size. . In addition to this, the driver board for driving the semiconductor chip and the control board for controlling the semiconductor chip are arranged on the upper surface of the capacitor module, so that the upper surface of the capacitor module can be effectively used and reduced in size. Realized.

(2) Description of Reliability Improvement In the power conversion device according to this embodiment, as described above, the cooling efficiency of the semiconductor module can be greatly improved, and as a result, the temperature rise of the semiconductor chip can be suppressed, and the reliability is improved. It leads to improvement.

  A plurality of semiconductor modules have a sandwich structure with a capacitor module sandwiched between them. Further, by arranging the DC positive terminal and the DC negative terminal of the semiconductor module at equal intervals from the capacitor module side, these DC terminal and capacitor module The positive and negative terminals can be connected with a DC bus bar of the same shape, allowing low inductance between the semiconductor module and capacitor module, and low inductance of the semiconductor module due to the internal arrangement structure of the semiconductor module. Thus, the voltage jump due to the switching operation can be reduced, leading to improvement in reliability. In addition, the suppression of the voltage rise makes it possible to increase the switching speed of the semiconductor chip, leading to a reduction in the amount of heat generated by shortening the switching operation time, which in turn suppresses the temperature rise and leads to an improvement in reliability.

  As described above, the structure in which the DC terminal of the semiconductor module is connected to the capacitor module, and further the terminal structure of the capacitor module is simplified, leading to not only improvement in productivity and size reduction but also improvement in reliability.

  In this power converter, since the cooling efficiency is greatly improved, the engine cooling water can be used as the cooling water. For this reason, a dedicated cooling water system is unnecessary for the automobile, and the reliability of the entire automobile is greatly improved.

  In this power converter, the structure which inserts and fixes the semiconductor module which accommodated the series circuit of the upper and lower arm of an inverter in a water channel from the opening provided in the cooling water channel is comprised. It is possible to inspect the semiconductor module and the water channel casing separately manufactured on the manufacturing line, respectively, and then perform a process of fixing the semiconductor module to the water channel casing. In this way, it is possible to separately manufacture and inspect the semiconductor module that is an electrical component and the water channel casing that is a mechanical component, which leads to improvement in reliability as well as improvement in productivity.

  Further, in the semiconductor module, a method of manufacturing a semiconductor module by fixing necessary conductors and semiconductor chips to the first and second heat radiating metals, respectively, and then integrating the first and second heat radiating metals. Is possible. It becomes possible to perform the process of integrating the heat dissipation metal after confirming the manufacturing states of the first and second heat dissipation metals, leading to not only improvement of productivity but also improvement of reliability.

  In this power converter, when the collector surface of the semiconductor chip of the upper arm is fixed to the first heat radiating metal, the collector surface of the semiconductor chip of the lower arm is similarly fixed to the first heat radiating metal. The collector surface and the emitter surface of the semiconductor chip are in the same direction. With such a structure, productivity is improved and reliability is improved.

  Further, the semiconductor chip of the upper and lower arms and the signal terminals and gate terminals of the upper and lower arms are fixed to the same heat radiating metal. For this reason, the wire bonding connection process for connecting the semiconductor chip to the signal terminal and the gate terminal can be concentrated on one heat dissipating metal, which facilitates inspection and the like. This not only improves productivity but also improves reliability.

  In addition, since U-phase, V-phase, and W-phase semiconductor modules are arranged on each side of the capacitor module in the above-mentioned water channel housing sandwich structure, the U-turn portion of the cooling water channel is reduced, so that the pressure loss of the water channel is reduced. The cooling water source pressure can be reduced and cooling water leakage is reduced, leading to reliability. Furthermore, the condenser module can be directly cooled by placing the condenser module in the cooling water path formed on substantially the same plane. In addition to the semiconductor module, the condenser module can also be cooled, and these operations can be performed. This helps to improve the reliability of the power converter.

(3) Description Regarding Productivity Improvement In the power conversion device according to the present embodiment, as described above, the semiconductor module and the cooling housing are separately manufactured, and then the semiconductor module is fixed to the cooling housing. It is possible to manufacture a semiconductor module on an electric production line. This improves productivity and reliability. Similarly, the capacitor module can be manufactured in another manufacturing process and then fixed to the water channel casing, so that productivity is improved.

  In addition, the semiconductor module and the capacitor module can be fixed to the water channel housing, and then the terminal connection between the semiconductor module and the capacitor module can be performed. It leads to improvement of productivity. In these connection processes, the terminals of the semiconductor module are fixed to the heat dissipating metal of the semiconductor module, respectively, and the heat at the time of terminal welding diffuses to the heat dissipating metal, respectively, which can suppress adverse effects on the semiconductor chip. This leads to improved productivity and reliability.

  In addition, since the semiconductor chip of the upper and lower arms and the signal terminals and gate terminals of the upper and lower arms can be fixed to one heat radiating metal of the semiconductor module, wire bonding of both the upper arm and the lower arm is performed on one heat radiating metal production line. Can improve productivity.

  The power conversion device according to the present embodiment mass-produces semiconductor modules having the same structure, and can adopt a method of using a required number of semiconductor modules based on the required specifications of the power conversion device. As a result, productivity can be improved and price reduction and reliability can be improved. As described above, the power conversion device according to the embodiment of the present invention has structural features and effects from the above-described three technical viewpoints. The details will be described below.

“Embodiments of the Present Invention”
Next, a power converter according to an embodiment of the present invention will be described in detail with reference to the drawings. The power conversion device according to the embodiment of the present invention can be applied to a hybrid vehicle or a pure electric vehicle. As a representative example, a control configuration when the power conversion device according to the embodiment of the present invention is applied to a hybrid vehicle. The circuit configuration of the power converter will be described with reference to FIGS. FIG. 1 is a diagram showing a control block of a hybrid vehicle. FIG. 2 shows a vehicle drive electrical machine system including an inverter device including a series circuit of upper and lower arms and a control unit, a power conversion device including a capacitor connected to the DC side of the inverter device, a battery, and a motor generator. It is a figure which shows a circuit structure.

  The power conversion device according to the embodiment of the present invention is used in a vehicle-mounted power conversion device for a vehicle-mounted electrical system mounted on an automobile, in particular, a vehicle drive electrical system, and has a very severe mounting environment and operational environment. The inverter device will be described as an example. A vehicle drive inverter device is provided in a vehicle drive electrical system as a control device for controlling the drive of a vehicle drive motor, and a DC power supplied from an onboard battery or an onboard power generator constituting an onboard power source is a predetermined AC power. Then, the AC power obtained is supplied to the vehicle drive motor to control the drive of the vehicle drive motor. Further, since the vehicle drive motor also has a function as a generator, the vehicle drive inverter device also has a function of converting the AC power generated by the vehicle drive motor into DC power according to the operation mode. Yes. The converted DC power is supplied to the vehicle battery.

  The configuration of the present embodiment can be applied to an inverter device other than the vehicle driving device, for example, an inverter device used as a control device of an electric brake device or an electric power steering device, but it is most desirable when applied to a vehicle driving device. Demonstrate the effect. The idea of this embodiment can also be applied to other in-vehicle power converters such as DC / DC converters and DC / DC power converters such as DC / DC converters or AC / DC power converters. To achieve the most dramatic effect. Furthermore, an industrial power conversion device used as a control device for an electric motor that drives factory equipment, or a home power conversion device used for a control device for an electric motor that drives a household solar power generation system or household electrical appliance However, as described above, the most desirable effect can be achieved by applying it for vehicle driving.

  In addition, the vehicle drive electric machine system including the vehicle drive inverter device to which the present embodiment is applied uses an engine that is an internal combustion engine and a vehicle drive motor as a vehicle drive source, and drives one of the front and rear wheels. The case where it mounts in the hybrid vehicle comprised in this way is mentioned as an example, and is demonstrated. Further, some hybrid vehicles drive one of the front and rear wheels by an engine and the other one of the front and rear wheels by a vehicle driving motor. However, this embodiment can be applied to any hybrid vehicle. Furthermore, as described above, the present invention can also be applied to a pure electric vehicle such as a fuel cell vehicle. In a pure electric vehicle, the power conversion device described below performs substantially the same operation, and substantially the same effect can be obtained.

  In FIG. 1, a hybrid electric vehicle (hereinafter referred to as “HEV”) 10 is one electric vehicle, and includes two vehicle drive systems. One of them is an engine system that uses an engine 20 that is an internal combustion engine as a power source. The engine system is mainly used as a drive source for HEV. The other is an in-vehicle electric system using motor generators 92 and 94 as a power source. The in-vehicle electric system is mainly used as an HEV drive source and an HEV power generation source. The motor generators 92 and 94 are, for example, permanent magnet synchronous motors. However, the motor generators 92 and 94 operate as both motors and generators depending on the operation method.

  A front wheel axle 14 is rotatably supported at the front portion of the vehicle body. A pair of front wheels 12 are provided at both ends of the front wheel axle 14. A rear wheel axle (not shown) is rotatably supported on the rear portion of the vehicle body. A pair of rear wheels are provided at both ends of the rear wheel axle. The HEV of the present embodiment employs a so-called front wheel drive system in which the main wheel driven by power is the front wheel 12 and the driven wheel to be driven is the rear wheel. You may adopt.

  A front wheel side differential gear (hereinafter referred to as “front wheel side DEF”) 16 is provided at the center of the front wheel axle 14. The front wheel axle 14 is mechanically connected to the output side of the front wheel side DEF 16. The output shaft of the transmission 18 is mechanically connected to the input side of the front wheel side DEF16. The front wheel side DEF 16 is a differential power distribution mechanism that distributes the rotational driving force that is shifted and transmitted by the transmission 18 to the left and right front wheel axles 14. The output side of the motor generator 92 is mechanically connected to the input side of the transmission 18. The output side of the engine 20 and the output side of the motor generator 94 are mechanically connected to the input side of the motor generator 92 via the power distribution mechanism 22. The motor generators 92 and 94 and the power distribution mechanism 22 are housed inside the casing of the transmission 18.

  The power distribution mechanism 22 is a differential mechanism composed of gears 23 to 30. The gears 25 to 28 are bevel gears. The gears 23, 24, 29, and 30 are spur gears. The power of the motor generator 92 is directly transmitted to the transmission 18. The shaft of the motor generator 92 is coaxial with the gear 29. With this configuration, when drive power is not supplied to the motor generator 92, the power transmitted to the gear 29 is transmitted to the input side of the transmission 18 as it is.

  When the gear 23 is driven by the operation of the engine 20, the power of the engine 20 is transferred from the gear 23 to the gear 24, then from the gear 24 to the gear 26 and the gear 28, and then from the gear 26 and the gear 28 to the gear 30. Each is transmitted, and finally transmitted to the gear 29. When the gear 25 is driven by the operation of the motor generator 94, the rotation of the motor generator 94 is transmitted from the gear 25 to the gear 26 and the gear 28, and then from the gear 26 and the gear 28 to the gear 30, respectively. It is transmitted to the gear 29. As the power distribution mechanism 22, other mechanisms such as a planetary gear mechanism may be used instead of the above-described differential mechanism.

  The motor generators 92 and 94 are synchronous machines having permanent magnets on the rotor, and the AC generators 92 and 94 are controlled by the inverter devices 40 and 42 by controlling the AC power supplied to the armature windings of the stator. Is controlled. A battery 36 is electrically connected to the inverter devices 40 and 42, and power can be exchanged between the battery 36 and the inverter devices 40 and 42.

  In the present embodiment, the first motor generator unit composed of the motor generator 92 and the inverter device 40 and the second motor generator unit composed of the motor generator 94 and the inverter device 42 are provided, and they are selectively used according to the operating state. ing. That is, in the case where the vehicle is driven by the power from the engine 20, when assisting the driving torque of the vehicle, the second motor generator unit is operated by the power of the engine 20 as a power generation unit to generate power, and the power generation The first electric power generation unit is operated as an electric unit by the obtained electric power. Further, in the same case, when assisting the vehicle speed of the vehicle, the first motor generator unit is operated by the power of the engine 20 as a power generation unit to generate power, and the second motor generator unit is generated by the electric power obtained by the power generation. Operate as an electric unit.

  In the present embodiment, the vehicle can be driven only by the power of the motor generator 92 by operating the first motor generator unit as an electric unit by the electric power of the battery 36. Further, in the present embodiment, the battery 36 can be charged by operating the first motor generator unit or the second motor generator unit as a power generation unit by using the power of the engine 20 or the power from the wheels to generate power.

  Next, the electric circuit configuration of the inverter devices 40 and 42 will be described with reference to FIG. In the embodiment shown in FIGS. 1 to 2, the case where the inverter devices 40 and 42 are individually configured will be described as an example. However, as described later with reference to FIG. 42 may be stored in one apparatus. Since the inverter devices 40 and 42 have the same configuration and perform the same functions and have the same functions, the inverter device 40 will be described here as an example.

  The power conversion apparatus 100 according to the present embodiment includes an inverter device 40, a capacitor 90, a DC connector 38, and an AC connector 88, and the inverter device 40 includes an inverter circuit 44 and a control unit 70. Further, the inverter circuit 44 includes a plurality of upper and lower arm series circuits 50 each including an IGBT 52 (insulated gate bipolar transistor) and a diode 56 that operate as an upper arm, and an IGBT 62 and a diode 66 that operate as a lower arm (FIG. 2). In this example, three upper and lower arm series circuits 50, 50, and 50), AC power lines from the middle point (intermediate electrode 69) of each of the upper and lower arm series circuits 50 to the motor generator 92 through an AC terminal 59 (see FIG. 3). In this configuration, 86 is pulled out. The control unit 70 includes a driver circuit (built in the driver board) 74 that drives and controls the inverter circuit 44, a control circuit 72 (built in the control board) that supplies a control signal to the driver circuit 74 via the signal line 76, have.

  The IGBTs 52 and 62 of the upper arm and the lower arm are switching power semiconductor elements, operate in response to a drive signal output from the control unit 70, and convert DC power supplied from the battery 36 into three-phase AC power. . The converted electric power is supplied to the armature winding of the motor generator 92. As described above, the three-phase AC power generated by the motor generator 92 can be converted into DC power.

  The power conversion apparatus 100 according to the present embodiment is configured by a three-phase bridge circuit, and upper and lower arm series circuits 50, 50, 50 for three phases are electrically connected between the positive electrode side and the negative electrode side of the battery 36, respectively. It is configured by being connected in parallel. Here, the upper and lower arm series circuit 50 is called an arm, and includes an upper arm side switching power semiconductor element 52 and a diode 56, and a lower arm side switching power semiconductor element 62 and a diode 66.

  In the present embodiment, the use of IGBTs (insulated gate bipolar transistors) 52 and 62 as power semiconductor elements for switching is exemplified. The IGBTs 52 and 62 include collector electrodes 53 and 63, emitter electrodes, gate electrodes (gate electrode terminals 54 and 64), and signal emitter electrodes (signal emitter electrode terminals 55 and 65). Diodes 56 and 66 are electrically connected between the collector electrodes 53 and 63 and the emitter electrodes of the IGBTs 52 and 62 as shown in the figure. The diodes 56 and 66 have two electrodes, a cathode electrode and an anode electrode. The cathode electrode serves as the collector electrode of the IGBTs 52 and 62 so that the direction from the emitter electrode to the collector electrode of the IGBTs 52 and 62 is the forward direction. The anode electrode is electrically connected to the emitter electrodes of the IGBTs 52 and 62, respectively.

  A MOSFET (metal oxide semiconductor field effect transistor) may be used as the power semiconductor element for switching. The MOSFET includes three electrodes, a drain electrode, a source electrode, and a gate electrode. Note that the MOSFET includes a parasitic diode between the source electrode and the drain electrode whose forward direction is from the drain electrode to the source electrode. For this reason, unlike the IGBT, there is no need to provide a separate diode.

  The upper and lower arm series circuit 50 is provided for three phases corresponding to each phase winding of the armature winding of the motor generator 92. The three upper and lower arm series circuits 50, 50, 50 respectively provide an U electrode, a V phase, and a W phase to the motor generator 92 via an intermediate electrode 69 that connects the emitter electrode of the IGBT 52 and the collector electrode 63 of the IGBT 62, and an AC terminal 59. Forming. The upper and lower arm series circuits are electrically connected in parallel. The collector electrode 53 of the upper arm IGBT 52 is connected to the positive electrode capacitor electrode of the capacitor 90 via the positive electrode terminal (P terminal) 57, and the emitter electrode of the lower arm IGBT 62 is connected to the negative electrode of the capacitor 90 via the negative electrode terminal (N terminal) 58. Each of the side capacitor electrodes is electrically connected. An intermediate electrode 69 corresponding to the middle point portion of each arm (the connection portion between the emitter electrode of the IGBT 52 of the upper arm and the collector electrode of the IGBT 62 of the lower arm) is connected to the corresponding phase winding of the armature winding of the motor generator 92 with an AC connector. 88 is electrically connected. In the present embodiment, as will be described in detail later, one upper and lower arm series circuit 50 including upper and lower arms is a main circuit component of the semiconductor module.

  Capacitor 90 is for constituting a smoothing circuit that suppresses fluctuations in the DC voltage caused by the switching operation of IGBTs 52 and 62. A positive electrode side of the battery 36 is electrically connected to the positive electrode side capacitor electrode of the capacitor 90, and a negative electrode side of the battery 36 is electrically connected to the negative electrode side capacitor electrode of the capacitor 90 via the DC connector 38. Thereby, the capacitor 90 is connected between the collector electrode 53 of the upper arm IGBT 52 and the positive electrode side of the battery 36, and between the emitter electrode of the lower arm IGBT 62 and the negative electrode side of the battery 36, and is connected in series with the battery 36. Electrically connected to the circuit 50 in parallel.

  The control unit 70 is for operating the IGBTs 52 and 62, and generates a timing signal for controlling the switching timing of the IGBTs 52 and 62 based on input information from other control devices and sensors. (Built in the control board) and a drive circuit (built in the driver board) 74 for generating a drive signal for switching the IGBTs 52 and 62 based on the timing signal output from the control circuit 72.

  The control circuit 72 includes a microcomputer (hereinafter referred to as “microcomputer”) for calculating the switching timing of the IGBTs 52 and 62. The microcomputer receives as input information the target torque value required for the motor generator 92, the current value supplied from the upper and lower arm series circuit 50 to the armature winding of the motor generator 92, and the magnetic pole of the rotor of the motor generator 92. The position has been entered. The target torque value is based on a command signal output from a host controller (not shown). The current value is detected based on the detection signal output from the current sensor 80. The magnetic pole position is detected based on a detection signal output from a rotating magnetic pole sensor (not shown) provided in the motor generator 92. In the present embodiment, the case where the current values of three phases are detected will be described as an example, but the current values for two phases may be detected.

  The microcomputer in the control circuit 72 calculates the d and q axis current command values of the motor generator 92 based on the target torque value, and the calculated d and q axis current command values and the detected d and q The voltage command values for the d and q axes are calculated based on the difference from the current value of the shaft, and the calculated voltage command values for the d and q axes are calculated based on the detected magnetic pole position. Convert to W phase voltage command value. Then, the microcomputer generates a pulse-like modulated wave based on a comparison between the fundamental wave (sine wave) and the carrier wave (triangular wave) based on the voltage command values of the U phase, V phase, and W phase, and the generated modulation wave The wave is output to the driver circuit 74 as a PWM (pulse width modulation) signal. The driver circuit 74 outputs six PWM signals from the microcomputer corresponding to the upper and lower arms of each phase. Other signals such as a rectangular wave signal may be used as the timing signal output from the microcomputer.

  The driver circuit 74 is configured by an integrated circuit in which a plurality of electronic circuit components are integrated into one, a so-called driver IC. In the present embodiment, a case where one IC is provided for each of the upper and lower arms of each phase (1 arm in 1 module: 1 in 1) will be described as an example, but one arm corresponding to each arm. An IC may be provided (2 in 1), or one IC may be provided corresponding to all the arms (6 in 1). When driving the lower arm, the driver circuit 74 amplifies the PWM signal. When the driver circuit 74 drives the upper arm to the gate electrode of the corresponding IGBT 62 of the lower arm, the driver circuit 74 sets the level of the reference potential of the PWM signal. After shifting to the level of the reference potential of the upper arm, the PWM signal is amplified and output as a drive signal to the gate electrode of the corresponding IGBT 52 of the upper arm. Thereby, each IGBT52 and 62 performs switching operation based on the input drive signal.

  In addition, the control unit 70 performs abnormality detection (overcurrent, overvoltage, overtemperature, etc.) and protects the upper and lower arm series circuit 50. For this reason, sensing information is input to the control unit 70. For example, information on the current flowing through the emitter electrodes of the IGBTs 52 and 62 is input from the signal emitter electrode terminals 55 and 65 of each arm to the corresponding drive unit (IC). Thereby, each drive part (IC) detects overcurrent, and when overcurrent is detected, it stops the switching operation of corresponding IGBT52,62, and protects corresponding IGBT52,62 from overcurrent. Information on the temperature of the upper and lower arm series circuit 50 is input to the microcomputer from a temperature sensor (not shown) provided in the upper and lower arm series circuit 50. Further, information on the voltage on the DC positive side of the upper and lower arm series circuit 50 is input to the microcomputer.

 The microcomputer performs over-temperature detection and over-voltage detection based on such information, and when an over-temperature or over-voltage is detected, stops the switching operation of all the IGBTs 52 and 62, and the upper and lower arm series circuit 50 (by pulling) The semiconductor module including the circuit 50 is protected from overtemperature or overvoltage.

  In FIG. 2, an upper and lower arm series circuit 50 is a series circuit of an upper arm IGBT 52 and an upper arm diode 56, and a lower arm IGBT 62 and a lower arm diode 66. The IGBTs 52 and 62 are switching semiconductor elements. . The conduction and cut-off operations of the IGBTs 52 and 62 of the upper and lower arms of the inverter circuit 44 are switched in a certain order, and the current of the stator winding of the motor generator 92 at the time of switching flows through a circuit formed by the diodes 56 and 66.

  As shown in the figure, the upper and lower arm series circuit 50 includes a positive terminal (P terminal, positive terminal) 57, a negative terminal (N terminal 58, negative terminal), and an AC terminal 59 from the intermediate electrode 69 of the upper and lower arms (see FIG. 3). ), Upper arm signal terminal (signal emitter electrode terminal) 55, upper arm gate (base) electrode terminal 54, lower arm signal terminal (signal emitter electrode terminal) 65, lower arm gate (base) The electrode terminal 64 is provided. The power conversion apparatus 100 has a DC connector 38 on the input side and an AC connector 88 on the output side, and is connected to the battery 36 and the motor generator 92 through the connectors 38 and 88.

  FIG. 3 is a diagram showing a circuit configuration of a power conversion device that uses two upper and lower arm series circuits for each phase as a circuit that generates an output of each phase of a three-phase AC output to the motor generator. As the capacity of the motor generator increases, the amount of power converted by the power converter increases, and the value of current flowing through the upper and lower arm DC circuits of each phase of the inverter circuit 44 increases. Increasing the electric capacity of the upper and lower arms can cope with an increase in the conversion power, but it is preferable to increase the production amount of the inverter circuit (moduleized). By increasing the number of inverter circuits (modules) used, the amount of power to be converted is increased.

  More specifically, the inverter circuit 44 shown in FIG. 2 includes three upper and lower arm series circuits 50, 50, and 50, which form the U phase, the V phase, and the W phase to the motor generator 92, whereas FIG. Is provided with two inverter circuits (inverter circuit 1 (45) and inverter circuit 2 (46)) having the same configuration as that of the inverter circuit 44 shown in FIG. 2, and these inverter circuits 45 and 46 are connected in parallel to be controlled. This is to cope with an increase in the capacity of the motor generator 92. That is, the configuration shown in FIG. 3 is provided with 50U1 and 50U2 corresponding to the U-phase upper and lower arm series circuit 50 shown in FIG. 2, and similarly provided with 50V1 and 50V2 corresponding to the V phase. Correspondingly, 50W1 and 50W2 are provided. The AC power lines 86 of the inverter circuit 1 and the inverter circuit 2 shown in FIG. 3 are structurally represented as an AC bus bar 1 (391) and an AC bus bar 2 (392) in the following drawings.

  Next, the outline | summary is demonstrated about the whole structure of the power converter device which concerns on embodiment of this invention.

  FIG. 4 is a perspective view showing the external appearance of the overall configuration of the power conversion device according to the embodiment of the present invention. FIG. 5 is an exploded perspective view of the overall configuration of the power converter according to the embodiment of the present invention. FIG. 6 is a plan view in which the upper case is removed from the overall configuration of the power conversion device according to the embodiment of the present invention.

  4 to 6, the power conversion device according to the present embodiment exemplifies a power converter having a configuration including the inverter circuit 1 (45) and the inverter circuit 2 (46) shown in FIG.

  38 is a DC connector, 88 is an AC connector 1 (connector connected to the AC power line 86 of the inverter circuit 1 shown in FIG. 3), and 89 is an AC connector 2 (power converter connected to the AC power line 86 of the inverter circuit 2 shown in FIG. 3). Connector), 91 is an AC connector flange, 100 is a power converter, 112 is an upper case, 122 is an AC connector positioning unit, 124 is an upper case flange, 142 is a lower case, 144 is a water channel lid, 145 is a module lid 1 146 is a module lid 2, 246 is a water channel inlet, 248 is a water channel outlet, 372 is a control board (with built-in control circuit), 373 is a control IC 1, 374 is a control IC 2, 386 is a driver board, 387 is a driver IC, 388 is a signal connector, 391 is an AC bus bar 1 (AC power line 86 of the inverter circuit 1 shown in FIG. 3). , 392 denotes an AC bus bar 2 (the AC power line 86 of the inverter circuit 2 shown in FIG. 3), respectively.

  The overall configuration of the power conversion apparatus 100 according to the embodiment of the present invention shown in FIGS. 4 to 6 includes a DC connector 38 connected to a battery 36 (see FIG. 2), a motor generator as an external electrical connection structure. 92 (see FIG. 2) and an AC connector 1 (88) and an AC connector 2 (89) connected to each other. As an external structure, an upper case 112 and a lower case 142 are provided, and an upper and lower arm series circuit 50 is further included. A water channel inlet 246 and a water channel outlet 248 for cooling the semiconductor module and the capacitor module are provided.

  Also, the module lid 1 (145) covering the upper part of each semiconductor module including the upper and lower arm series circuits of the U1, V1, and W1 phases shown in FIG. A driver board 386 and a control board 372 are stacked between the module lid 2 (146) covering the top of each semiconductor module including the arm series circuit and the upper case 112 (see FIG. 5). ). A control IC 1 (373) and a control IC 2 (374) are mounted on the control board 372, and a driver IC 387 is mounted on the driver board 386. Further, an AC bus bar 1 (391) and an AC bus bar 2 (392) are arranged for three phases below the driver board 386. In addition, in a horizontally formed water channel space including the water channel inlet portion 246 and the outlet portion 248, a semiconductor module including an upper and lower arm series circuit 50 and a heat radiation fin is loaded and cooled, as will be described later. .

  Next, the semiconductor module 500 in the power conversion device according to the embodiment of the present invention will be described below with reference to FIGS. 13, 14, 15, and 16. FIG. 13 is a perspective view showing the external appearance of the entire configuration of the semiconductor module in the power conversion device according to the embodiment of the present invention. FIG. 14 is a cross-sectional view of the semiconductor module according to this embodiment, and is a view showing a cross-sectional structure taken along line AA shown in FIG. FIG. 15 is an exploded perspective view of the entire configuration of the semiconductor module according to this embodiment. 16 is a diagram showing a cross-sectional structure taken along line BB shown in FIG.

  13 to 16, the semiconductor module 500 in the power conversion device according to the embodiment of the present invention includes a heat radiation fin (A side) 522 on one side (note that a heat radiation fin is a fin-shaped portion having unevenness. Rather than the entire heat-dissipating metal), the heat dissipating fin (B side) 562 on the other side, the upper and lower arm series circuit 50 sandwiched between both heat dissipating fins 522 and 562, and the positive terminal of the upper and lower arm series circuit 532, a negative terminal 572, and various terminals including an AC terminal 582, a top case 512, a bottom case 516, and a side case 508 are provided. As shown in FIG. 14 and FIG. 15, the upper and lower arm series circuit on the conductor plate fixed to the radiating fin (A side) 522 and the radiating fin (B side) 562 via the insulating sheet (the manufacturing method thereof will be described later). ) Are sandwiched between the radiating fin (A side) 522 and the radiating fin (B side) 562, the bottom case 516, the top case 512, and the side case 508 are attached, and the top case 512 is interposed between the radiating fins 522 and 562. The mold resin is filled from the side to form the semiconductor module 500 as an integrated structure.

  As shown in FIG. 13, the semiconductor module 500 is formed with heat dissipating fins (A side) and heat dissipating fins (B side) facing (inserted) the cooling water channel, and a top and bottom arm series circuit is formed from the top case 512. 50 positive terminal 532 (corresponding to P terminal 57 in FIGS. 2 and 3), negative terminal 572 (corresponding to N terminal 58 in FIGS. 2 and 3), AC terminal 582 (corresponding to AC terminal 59 in FIG. 3), A signal terminal (for upper arm) 552, a gate terminal (for upper arm) 553, a signal terminal (for lower arm) 556, and a gate terminal (for lower arm) 557 protrude.

  The external shape of the semiconductor module 500 is a substantially rectangular parallelepiped shape, and the radiation fin (A side) 522 and the radiation fin (B side) 562 are large in area, and the surface of the radiation fin (B side) 562 is the front surface and the radiation fin (A side). ) As the rear surface (as shown in the example of FIG. 13), the side surface having the side case 508 and the opposite side surfaces, the bottom surface and the top surface are narrower than the front surface or the rear surface described above. The basic shape of the semiconductor module is a substantially rectangular parallelepiped shape, and the heat dissipating fins (B side) and (A side) are square, so cutting is easy and the semiconductor module is difficult to roll on the production line. , Excellent in productivity. Furthermore, the ratio of the heat radiation area with respect to the entire volume can be increased, and the cooling effect is improved.

  In this embodiment, the radiating fin (A side) 522 or the radiating fin (B side) 562 sandwiches the semiconductor chip and holds a conductor inside the semiconductor module and a fin for radiating heat. Is made of one metal. This structure is excellent in increasing the heat dissipation efficiency. However, although the heat radiation efficiency is slightly lowered, a structure in which a semiconductor chip is sandwiched and a metal plate for holding a conductor inside the semiconductor module and a heat radiation fin are separately formed and bonded together can be used.

Further, a positive terminal 532 (corresponding to the P terminal 57 in FIG. 3), a negative terminal 572 (corresponding to the N terminal 58 in FIG. 3), an AC terminal 582 (in FIG. 3) ), Signal terminal (for upper arm) 552, gate terminal (for upper arm) 553, signal terminal (for lower arm) 556, gate terminal (for lower arm) 557 are collected. The semiconductor module 500 is excellent in ease of insertion into the water channel housing. Further, a hole 583 is provided between the positive terminal 532 and the negative terminal 572 to ensure insulation between these terminals. The hole 583 is formed in the mold resin 507 formed between the positive terminal 532 and the negative terminal 572. As will be described later, a terminal insulating portion attached to the capacitor module provided between the positive terminal and the negative terminal of the capacitor module 390 is inserted into the hole 583 (see FIG. 21). Therefore, the hole 583 has both functions of insulation between terminals and positioning.

  Further, as shown in FIG. 13, the outer shape of the upper surface provided with such a terminal is made larger than the outer shape on the bottom surface side, and the terminal portion that is most easily damaged when the semiconductor module moves on a production line or the like. Can be protected. That is, since the outer shape of the top case 512 is made larger than the outer shape of the bottom case 516, in addition to the effect of being excellent in the sealing performance of the cooling water channel opening described later, when manufacturing or transporting the semiconductor module, the water channel housing There is an effect that the terminal of the semiconductor module can be protected at the time of mounting to the housing.

  According to the arrangement of the terminals shown in FIG. 13, the positive electrode terminal 532 and the negative electrode terminal 572 each have a plate-like shape with a rectangular cross-sectional area, and the tip portion thereof has a comb-teeth shape. Further, the radiation fin (B side) As viewed from 562, they are arranged on the left and right sides at an equal distance, and are arranged close to one side surface of the semiconductor module. As shown in FIGS. 13 and 14, each of the terminals 532 and 572 has a structure having a comb-teeth shape at the tip thereof, and the conductor plate of the arm is first extended in the vertical direction (planting), and then is extended in the horizontal direction. (Bent at a right angle) to a comb shape. That is, the positive electrode terminal 532 and the negative electrode terminal 572 have a bent portion, and these comb teeth are arranged so as to follow the radiation fins 522 (A side). Note that the terminals 532 and 572 shown in FIGS. 13 and 14 show bent portions, but the terminals 532 and 572 shown in FIGS. 15 to 20 shown later have no bent portions and have a straight shape. However, the terminal in FIG. 13 shows a state after the soldering operation, the internal molding, and the case bonding (joining) process are completed and the bending process is finally performed. That is, the straight shape of FIGS. 15-20 is a state before a bending process. The reason why the bending process is performed last is to prevent a force from being applied to the internal semiconductor and the solder joint during the bending operation, and it is difficult to assemble the top case 512 if it is bent first.

  As will be described in detail later, since the capacitor module 390 is disposed so as to face the radiation fin (B side) 562, the positive terminal and the negative terminal of the capacitor module are equal in length to the positive terminal 532 and the negative terminal 572 of the semiconductor module. The DC bus bar can be connected, and wiring becomes easy. Further, the connection ends of the positive electrode terminal 532 and the negative electrode terminal 572 and the connection end of the AC terminal 582 are shifted from each other in the front-rear direction of the semiconductor module (the direction connecting both side surfaces of the semiconductor module). For this reason, there is a space for using a tool for connecting the connection end of the positive electrode terminal 532 or the negative electrode terminal 572 and other components and connecting the connection end of the AC terminal 582 and other components in the production line of the power converter. Easy to secure and excellent in productivity.

  There is a possibility that the power conversion device for automobiles is cooled down to minus 30 degrees or less and close to minus 40 degrees. On the other hand, there is a possibility that the temperature may be 100 ° C. or higher, and rarely close to 150 ° C. As described above, in the power conversion device mounted on the automobile, it is necessary to sufficiently consider the change in thermal expansion because the operating temperature range is wide. It is also used in an environment where vibration is constantly applied. The semiconductor module 500 described with reference to FIGS. 13 to 16 has a structure in which a semiconductor chip is sandwiched between two heat dissipating metals. In this embodiment, a metal plate having a heat radiating fin having an excellent heat release function is used as an example of the heat radiating metal. In this embodiment, the heat radiating fin 522 (A side) and the heat radiating fin 562 (B side) will be described. Yes.

  In the structure in which the above-described semiconductor chip is sandwiched, a structure in which both sides of the two heat dissipation metals are fixed by a top case 512 and a bottom case 516 is provided. In particular, the top case 512 and the bottom case 516 have a structure in which two heat dissipating metals are sandwiched and fixed from the outside. Specifically, a structure in which the protruding portions of the two heat dissipation metals 522 and 562 are fitted to the fitting portion 517 of the bottom case 516 may be used, and a similar fitting structure may be applied to the top case 512. That's fine. With such a structure, it is possible to prevent a large force in the direction of opening between the two radiating metals from being generated due to vibration or thermal expansion. A highly reliable power conversion device that does not break down even when mounted on a vehicle for a long period of time can be obtained.

  Furthermore, in the present embodiment, in addition to the two heat dissipating metals, a structure is adopted in which the top case 512 and the bottom case 516 including the side case are sandwiched and fixed from the outer peripheral side, so the reliability is further improved. To do.

  The positive terminal 532, the negative terminal 572, the AC terminal 582, the signal terminals 552 and 556, and the gate terminals 553 and 557 of the semiconductor module are projected to the outside through the holes in the top case 512 which is one case, This hole is sealed with a mold resin 507. The top case 512 is made of a material having high strength, and is made of a material having a similar thermal expansion coefficient, for example, a metal material, in consideration of the thermal expansion coefficients of the two heat dissipating metals. The mold resin 507 acts to absorb the stress due to the thermal expansion change of the case 512 and reduce the stress applied to the terminal described above. For this reason, the power converter of this embodiment has high reliability which can be used even in a state where the range of temperature change is wide as described above or in a state where vibration is constantly applied.

  FIG. 17 is an exploded view showing the structure of the internal arrangement of the upper and lower arm series circuit in the semiconductor module according to this embodiment. In FIG. 17, the semiconductor module according to the present embodiment has a heat radiating metal plate, for example, a heat radiating fin (A side) 522 and a heat radiating fin (B side) 562, which are metal plates having a fin structure. The insulating sheet (A side) 546 and the insulating sheet (B side) 596 are fixed by vacuum thermocompression bonding. Then, the conductor plate 534 on the positive electrode side and the conductor plate 535 for connecting the upper and lower arms are fixed to the insulating sheet (A side) 546 (see FIG. 19).

  Further, the negative electrode side conductor plate 574 and the AC terminal side conductor plate 584 are fixed to the insulating sheet (B side) 596, and the lower arm signal terminal 556 is connected to the negative electrode side conductor plate 574, so that the AC terminal is connected. The upper arm signal terminal 552 is connected to the side conductor plate 584 (see FIG. 20).

  The insulating sheet (A side) 546 and the insulating sheet (B side) 596 electrically connect the semiconductor chips and conductors constituting the upper and lower arm series circuit of the inverter circuit with the radiation fin (A side) 522 and the radiation fin (B side) 562. In addition to functioning as an insulating member that electrically insulates, it functions to form a heat conduction path that conducts heat generated from a semiconductor chip or the like to the radiation fin (A side) 522 or the radiation fin (B side) 562. The insulating member may be a resin insulating sheet or insulating plate, or a ceramic substrate. For example, in the case of a ceramic substrate, the thickness of the insulating member is preferably 350 μm or less, and in the case of an insulating sheet, it is desirable that the thickness is 50 μm to 200 μm. However, from the viewpoint of reducing inductance, it is effective that the insulating member is thin, and the insulating sheet made of resin is superior in characteristics to the ceramic substrate.

  Next, the upper arm IGBT chip 537 and the upper arm diode chip 539 are arranged in the vertical direction on the conductor plate 534 on the positive electrode side of the radiation fin (A side) 522 and fixed by soldering. Similarly, a lower arm IGBT chip 541 and a lower arm diode chip 543 are arranged in the vertical direction on the upper and lower arm connecting conductor plate 535 of the heat radiation fin (A side) 522 and fixed by soldering. Here, when comparing the vertical size of the IGBT chip and the diode chip, the size of the IGBT chip is considerably larger. Then, considering the water channel occupancy occupied by the IGBT chip and the diode chip with respect to the cooling water passing through the radiation fins 522, the water channel occupancy occupied by the upper arm IGBT chip 537 is larger than that of the upper arm diode chip 539. Is also considerably larger. The heat dissipation of the IGBT chip having a larger heat dissipation amount than that of the diode chip is promoted, and the heat dissipation efficiency of the entire semiconductor module is improved. Such heat radiation efficiency can be improved for the lower arm chips 541 and 543 as well as the upper arm chip.

 Further, as will be described later in detail in the description of FIGS. 18 to 20, the upper and lower arm connecting solder joints 555 for connecting the upper arm emitter electrode and the lower arm collector electrode are formed in the same manner as the lower arm chips 541 and 543. It is formed on the conductor plate 535 of the radiation fin (A side) 522 (see FIGS. 18 and 19), and the joint portion 555 is equivalent to the AC terminal 582 (corresponding to the AC terminal 59 in FIG. 3) via the solder layer 544 and the conductor plate 584. ) To form an intermediate electrode 69 (see FIG. 2) of the upper and lower arm series circuit. Also, between the gate electrode of the IGBT 537 of the upper arm soldered on the conductor plate of the radiation fin (A side) 522 and the signal conductor of the gate terminal (for upper arm) 553, and the gate of the IGBT 541 of the lower arm The electrode and the gate conductor of the gate terminal (for lower arm) 557 are connected by wire bonding 593 and 596, respectively.

  On the other hand, on the insulating sheet (B side) 596 of the radiation fin (B side) 562, as shown in FIGS. 17 and 20, the negative electrode side conductor plate 574 and the AC terminal 582 AC terminal side conductor plate are provided. 584, and the respective conductor plates of the signal terminal (for upper arm) 552 and the signal terminal (for lower arm) 556 are fixed. The conductor plate 574 on the negative electrode side is provided with a solder joint portion 757 to which the emitter side of the lower arm IGBT chip 541 is connected and a solder joint portion 759 to which the anode side of the lower arm diode chip 543 is connected. The plate 584 is provided with a solder joint portion 756 to which the emitter side of the upper arm IGBT chip 537 is connected and a solder joint portion 758 to which the anode side of the diode chip 543 of the upper arm is connected. The negative electrode terminal 572 (corresponding to the negative electrode terminal 58 shown in FIG. 2) has a conductor plate 574, solder joints 757 and 759, and solder layers 540 and 542 with respect to the IGBT chip 541 of the lower arm and the diode chip 543 of the lower arm. Are connected and connected. The positive terminal 532 is connected and coupled to the upper arm IGBT chip 537 and the upper arm diode chip 543 through the conductor plate 534, solder joints 751 and 752, and solder layers 547 and 548. The AC terminal 582 is connected to the upper and lower arm connecting solder joints 560, the solder layer 544, the upper and lower arm connecting solder joints 555, and the conductive plate 535 connected to the emitter side of the upper arm IGBT chip. To the lower arm IGBT chip 541. Each of the upper arm signal terminal 552 (corresponding to the signal terminal 55 shown in FIG. 2) and the lower arm signal terminal 556 (corresponding to the signal terminal 65 shown in FIG. 2) is an upper arm IGBT chip. 537 and the lower arm IGBT chip 541 are coupled to the respective emitter sides. The circuit configuration of the upper and lower arm series circuit 50 shown in FIG. 2 is formed by the semiconductor module arrangement structure described above.

  As shown in FIG. 17, both semiconductor chips constituting the upper arm and the lower arm are arranged and fixed in the vertical direction on the heat radiation fin (A side) 522, which is one of the heat radiation fins, and further, the upper arm gate terminal 553 and Since the lower arm date terminal 557 is provided on the heat radiating fin (A side) 522 and connection work such as wire bonding can be performed by one heat radiating fin (A side) 522, it can be concentrated in the manufacturing process, and productivity and reliability can be concentrated. It will be improved. Further, when used in an environment with large vibrations such as for automobiles, the semiconductor chip to be wired and the terminals are fixed to the same heat radiation fin, so that the vibration resistance is improved.

 As described above, the radiating fin (A side) 522 and the radiating fin (B side) 562 are opposed to each other as shown in FIG. 17, and the IGBT chips 537 and 541 and the diode chip 539 of the radiating fin (A side) 522 are arranged. The negative electrode terminal 572, the AC terminal 582, the upper arm signal terminal 552, and the lower arm signal terminal of the heat dissipating fin (B side) 562 so that the electrode with the 543 is connected as in the circuit configuration shown in FIG. It is made to face the conductor plate connected to 556 and soldered. Further, as shown in FIG. 15, the bottom case 516, the top case 512, and the side case 508 are bonded to the heat radiation fin (A side) 522 and the heat radiation fin (B side) 562 in an integrated structure. Glued. Further, the semiconductor module 500 is formed by filling the inside with mold resin from the hole 513 (see FIG. 15) of the top case.

 Next, in the semiconductor module 500 according to the present embodiment, a method and a specific structure of the upper and lower arm series circuit (for example, a two-arm in1 module structure) sandwiched between the heat radiation fins 522 and 562 will be described with reference to FIGS. This will be described with reference to FIG. FIG. 18 is a view showing an arrangement structure of upper and lower arm series circuits arranged on the heat radiation fin (A side) in the semiconductor module according to the present embodiment. FIG. 19 is a diagram showing a joining relationship of each component arranged on the heat radiation fin (A side) in the semiconductor module. FIG. 20 is a diagram showing a joining relationship of each component arranged on the heat radiation fin (BA side) in the semiconductor module.

  2 shows a basic process in manufacturing a semiconductor module according to the present embodiment. An insulating sheet, which is a highly heat-conductive resin layer on the inner side of a heat radiating metal plate, for example, a heat radiating fin (A side) 522 and a heat radiating fin (B side) 562 which are metal plates having a fin structure in this embodiment. (A side) 546 and insulating sheet (B side) 596 are fixed by vacuum thermocompression bonding, and the positive side conductor plate 534 and conductive plate 535 are fixed to the insulating sheet 546 (A side), and the insulating sheet 596 (B side) A conductor plate 574 on the negative electrode side and a conductor plate 584 for an AC terminal are fixed to each other. FIG. 19 shows the state of fixing of the conductive plates 534 and 535 to the radiation fin (A side) 522 and the insulating sheet (A side) 546, and the conductor to the radiation fin (B side) 562 and the insulation sheet (B side) 596. The state of fixation of the plates 574 and 584 is shown in FIG.

 Further, the gate conductor of the gate terminal (for upper arm) 553 and the gate conductor 559 of the gate terminal (for lower arm) 557 are fixed to the insulating sheet 546 (A side). The signal conductor of the signal terminal (for upper arm) 552 and the signal conductor of the signal terminal (for lower arm) 556 are fixed to the insulating sheet 596 (B side). These arrangement relationships are as shown in FIG. 19 and FIG.

 Next, solder layers 547, 548, 754, 548, corresponding to the solder joint portions 751, 752, 753, 754 provided on the conductor plate 534 on the positive electrode side on the radiating fin (A side) 522 side and the conductor plate 535 for connecting the upper and lower arms. The IGBT chip 537 (for the upper arm), the diode chip 539 (for the upper arm), the IGBT chip 541 (for the lower arm), and the diode chip 543 (for the lower arm) are soldered by interposing 549 and 550. At this time, the positive-side conductor plate 534 and the conductor plate 535 are provided in an insulated state, and the IGBT chip and the diode chip are soldered to the respective conductor plates 534 and 535. Further, as shown in FIG. 2, a solder joint 555 for connecting the emitter electrode of the upper arm and the collector electrode of the lower arm is soldered to the conductor plate 535 in the same manner as the chips 541 and 543, and is used for connecting the upper and lower arms. The solder joint 555 (see FIG. 19) of the upper and lower arms is brought into contact with the AC terminal conductor plate 584 through the upper and lower arm connecting solder joints 560 (see FIG. 20), thereby causing the intermediate electrode 69 (upper and lower arms) (See FIG. 2).

  Next, the gate wire (upper arm) is connected between the gate electrode of the IGBT 537 of the upper arm soldered on the conductor plate 534 of the heat radiation fin (A side) 522 and the gate conductor of the gate terminal (for upper arm) 553. For bonding) at 593 (see FIG. 17). Similarly, between the gate electrode of the IGBT 541 of the lower arm soldered on the conductor plate 535 of the radiation fin (A side) 522 and the gate conductor of the gate terminal (for lower arm) 557, the gate wire (lower Bonding connection is made at 597 for the arm.

  As shown in FIG. 18, both semiconductor chips constituting the upper arm and the lower arm are fixed to the radiation fin (A side) 522, which is one of the radiation fins, and a gate terminal 553 for controlling signals on these semiconductor chips. , 557 are provided. Since the semiconductor chip for the upper and lower arms and its control line are fixed to one insulating member in this way, the connection work between the signal line and the semiconductor chip such as wire bonding can be concentrated in the manufacturing process, and the productivity Reliability is improved. In addition, when used in an environment with large vibrations, such as for automobiles, vibration resistance is improved because one semiconductor chip to be wired and the other control line are both fixed to one heat radiating fin, which is the same member. To do.

  As shown in FIG. 19, the upper-arm semiconductor chip 537 (joined to the solder joint 751) and the lower-arm semiconductor chip 541 (joined to the solder joint 753) are placed in the same direction, that is, each of them. The collector surface of the semiconductor chip is directed to the insulating sheet 546 side which is an insulating member, and the solder joints 751 and 753 are provided so as to face the collector side of the IGBT chips 537 and 541. Thus, workability is improved by matching the directions of the semiconductor chips of the upper arm and the lower arm. The same applies to the diode chips 539 and 543.

  As shown in FIG. 14, with respect to the arrangement structure of the upper and lower arm series circuit 50 built in the semiconductor module 500 according to the present embodiment, the upper arm IGBT 52 is replaced by the upper arm diode 56 with reference to the detailed structure shown in FIG. This installation relationship is the same for the lower arm IGBT and diode. As will be described in detail later, the semiconductor module 500 shown in FIG. 13 is inserted and installed in the cooling water channel from above, and the semiconductor module 500 is cooled with the cooling water flowing in the cooling water channel. The fins (A side) 522 and the heat dissipating fins (B side) 562 flow through the comb teeth (concave portions).

  Here, the length in the height direction of the IGBT and the diode, taking the upper arm as an example, the height L of the IGBT 52 is higher than the height M of the diode 56 in terms of the structure and shape of each other. Long in the vertical direction (L> M). If it does so, the cooling water which flows through the comb-tooth part of a radiation fin will show a cooling effect according to this length L and M. In other words, the amount of cooling water corresponds to the lengths L and M, and the amount of cooling water corresponds to the IGBT that wants to dissipate more heat than the diode, leading to improved cooling efficiency.

  13 has a shape in which a positive electrode terminal 532 and a negative electrode terminal 572 that should be connected to the positive electrode side and the negative electrode side of the capacitor 90 protrude upward, and these terminals are further connected. 532 and 572 are arranged on a straight line in a direction along the cooling water channel (along a longitudinal direction of a rectangular shape in a cross section when the semiconductor module is viewed from above).

  On the other hand, as will be described later, on both sides of the capacitor module, a plurality of semiconductor modules are installed along the longitudinal direction (cooling water flow direction) of the upper cross section of the semiconductor module. It is a sandwich structure in which a plurality of semiconductor modules are arranged on both sides (see FIG. 11).

  In such an array structure of semiconductor modules and capacitor modules, the positive and negative terminals of the capacitor module are arranged to face the positive and negative terminals 532 and 572 of the semiconductor module shown in FIG. As a result, when the semiconductor module 500 and the capacitor module 390 are bar-connected, bars having the same shape and the same length can be used on the positive electrode side and the negative electrode side, which improves workability and improves the switching operation of the IGBT. The accompanying inductance can be reduced.

  Next, a specific configuration for realizing improvement in size, cooling efficiency, and assemblability in the power conversion device according to the embodiment of the present invention will be described below with reference to FIGS. FIG. 7 is an exploded view showing the arrangement configuration of the semiconductor modules in the power conversion device according to the embodiment of the present invention. The upper case, the control board, the driver board, and the AC connector are removed from the overall configuration of the power conversion device shown in FIG. It is a figure. 8 is a perspective view of a power system around a semiconductor module in which an AC connector and a DC connector are attached to the exploded view shown in FIG. FIG. 9 is an exploded view of the power system around the semiconductor module shown in FIG. FIG. 10 is a sectional view of the arrangement configuration of the semiconductor module shown in FIG. 7 as seen from the flow direction of the cooling water. FIG. 11 is a cross-sectional view seen from the cooling water flow direction with the upper case removed from the overall configuration of the power converter according to the present embodiment. FIG. 12 is a cross-sectional view of the semiconductor module, the capacitor module, and the cooling water channel according to this embodiment as viewed from above.

  First, an arrangement structure of a semiconductor module, a cooling water channel, a power system, and the like in the power conversion device according to the present embodiment will be described with reference to FIGS. The semiconductor module of the embodiment shown in FIG. 7 to FIG. 9 includes a semiconductor module 1 having a built-in upper and lower arm series circuit composed of U1, V1, and W1 phases, as shown in FIG. This is a structure exemplifying two systems of six semiconductor modules including a semiconductor module 2 incorporating a lower upper and lower arm series circuit composed of a W2 phase. The semiconductor module 1 is connected to the AC connector 1 (88) through three AC bus bars 1 (391). Similarly, the semiconductor module 2 is connected to the AC connector 2 (89) through three AC bus bars 2 (392). Connected. In the drawing, there is a semiconductor module 1 having a built-in upper and lower upper arm series circuit composed of U1, V1 and W1 phases as shown in FIG. 3 on the cooling water channel inlet 246 side (that is, on the side where the AC connectors 88 and 89 are arranged). The semiconductor module 2 composed of the U2 phase, the V2 phase, and the W2 phase is disposed on the opposite side (cooling water channel outlet 248 side).

  Further, a DC connector 38 connected to the capacitor module 390 is disposed on the side surface opposite to the side surface on which the cooling water inlet portion 246 and the outlet portion 248 are disposed. An AC connector 88 and an AC connector 89 (see FIG. 3) are mounted on the AC connector mounting portion 123 with the AC connector positioning portion 122 interposed therebetween, and an AC connector portion flange 90 is provided on the upper surface thereof. A semiconductor module insertion water channel 237 into which the semiconductor module 500 is inserted is formed in the lower case 142 on both sides of the capacitor module insertion portion 147 into which the capacitor module 390 (see FIG. 11) is inserted (see FIG. 10). In this way, a sandwich structure is formed in which the semiconductor modules 500 are arranged on both sides of the capacitor module 390.

  A module lid 1 (145) is disposed on the upper surface of the semiconductor module 1 arranged on the AC connector side, and a module lid 2 (146) is disposed on the upper surface of the semiconductor module 2 arranged on the opposite side, respectively. A water channel lid 144 (see FIG. 9) is disposed on the upper surface of the folded water channel 227 (see FIGS. 7 and 12) on the front side where the inlet portion 246 and the outlet portion 248 are disposed. Furthermore, a folded water channel 236 on the back surface is formed in the semiconductor module insertion water channel 237 (see FIG. 10) on the side opposite to the front surface (see FIG. 7). Further, a water channel forming body 1 (490) is provided in the vicinity of the water channel inlet portion 246, and a water channel forming body 2 (491) is provided in the vicinity of the water channel outlet portion 248, and the radiating fin (A side) of the semiconductor module is provided. A water flow is induced so that the cooling water flows over the entire area of the radiation fin (B side) (see FIG. 12).

  Next, a detailed arrangement structure such as a semiconductor module, a cooling water channel, and a power system in the power conversion device according to the present embodiment will be described with reference to FIGS. This embodiment employs a slot-in structure in which the semiconductor module 500 is inserted into a water channel 237 formed in the lower case 142 from above, and the semiconductor module 500 includes the semiconductor module positioning portion 502 of the lower case 142. And is fixed to the water channel 237 by the semiconductor module fixing part 501 of the module lids 145 and 146.

  In the water channel on the side of the AC connector mounting portion 123 on which the AC connectors 88 and 89 are mounted, for example, each of the U1 phase, V1 phase, and W1 phase semiconductor modules shown in FIG. 500, 500, 500 are inserted and fixed. Similarly, the U2-phase, V2-phase, and W2-phase semiconductor modules 500, 500, 500 shown in FIG. 3 are inserted and fixed in the water channel on the water channel outlet 248 side.

  Referring to FIG. 12, the water flow 250 from the water channel inlet 246 is guided by the water channel forming body 1 (490) to form a water flow 251 on one side of the heat radiation fin of the semiconductor module 500. The folded water channel 236 is folded back by a water flow 252 illustrated to form a water flow 253. Subsequently, the water flow is guided to the water channel forming body 1 (490), passes through the folded water channel 227 in the front portion, and then is guided to the water channel forming body 2 (491) to be the water channel on the side of the water channel outlet 248. To form a water stream. The water flow in the right water channel connected to the water channel outlet 248 shown in FIG. 12 forms a water flow similar to the above-described left water flow.

  As shown in FIG. 12, this embodiment, which employs a structure in which three semiconductor modules 500 are arranged on the left side of a capacitor module 390 and three semiconductor modules 500 are arranged on the right side, is disclosed in the prior art. The water channel inlet and the water channel outlet are arranged on the same side surface (for example, the front portion), and six reverse U-shaped water channels are arranged in the direction connecting the inlet portion and the outlet portion (for example, the left-right direction). Compared to a structure in which six semiconductor modules 500 are installed in each inverted U-shaped water channel by sequentially connecting U-shaped water channels with folded water channels, the U-turn folded water channel has 11 folded water channels in the above-described prior art. On the other hand, in the present embodiment shown in FIG. 12, two folded water channels 236 (the folded water channels above the left and right water channels), the water flow 254 and the water flow shown in the figure. A folded waterway consisting 56 is a three of.

  Then, considering the pressure loss of the water flow in the direction change of the water flow in the water channel, there are 11 U-turn water channels in the above-described prior art, whereas in the present embodiment shown in FIG. The pressure loss in the water channel can be remarkably reduced. If this pressure loss is reduced, the flow rate of the water flow is not so much different between the inlet portion and the outlet portion, and the cooling efficiency by the cooling water is not lowered so much.

  Further, as shown in FIGS. 11 and 12, the condenser module 390 is formed with water channels on both the left and right sides and the front side (see the water flow 255), so the capacitor module 390 is also cooled by the cooling water flowing through the water channel. It has a structure.

  Next, according to FIG. 11 (see also FIG. 5), the upper surface of the capacitor module 390 occupies a considerably large surface in the power converter 100, and the upper surface of the capacitor module 390 is effectively utilized. This structural arrangement is also one of the features of this embodiment. That is, a driver board 386 (corresponding to the driver board 74 shown in FIG. 2) is installed on the upper surface of the capacitor module 390, and the driver IC 387 is mounted on the driver board 386. Further, a control board 372 is installed on the driver board 386 via a connecting member, and both boards 386 and 372 are electrically connected by a signal connector 388 (see FIG. 5). A control board IC 373 is mounted on the control board 372. As described above, in this embodiment, the driver board and the control board are installed on the upper surface of the capacitor module 390, thereby effectively utilizing the upper surface.

  In other words, the left semiconductor module (for U1, V1, and W1 phases) shown in FIG. 11 corresponds to the inverter circuit 1 (45) shown in FIG. U2 phase, V2 phase, and W2 phase) correspond to the inverter circuit 2 (46) shown in FIG. Originally, the driver board 386 is provided for each of the inverter circuit 1 (45) and the inverter circuit 2 (46), but in this embodiment, the inverter is built in the three semiconductor modules 500 on the left side of FIG. By adopting a structure in which a driver board is bridged between the circuit 1 (45) and the inverter circuit 2 (46) provided on the right side (see FIG. 3), the two inverter circuits 1 and 2 are Thus, one driver board 386 can be shared.

  Further, referring to FIG. 10, the lower case 142 functionally forms a water channel housing (water channel 237 in FIG. 10), and further forms a capacitor module insertion portion 147.

Therefore, the lower case 142 functions as a water channel housing and also functions as a positioning unit for the capacitor module 390, so that the capacitor module can be easily positioned.

  As can be seen from the arrangement structure of the semiconductor module 500 and the capacitor module 390 in the power conversion apparatus shown in FIG. 7 and the arrangement structure of the positive terminal 532 and the negative terminal 572 of the semiconductor module 500 shown in FIG. Since the capacitor module 390 is disposed so as to face the 562, the positive terminal and the negative terminal of the capacitor module 390 can be connected to the positive terminal 532 and the negative terminal 572 of the semiconductor module 500 with a DC bus bar having the same length, and the connection is easy. (Two DC bus bars of the same length and the same structure are prepared, and these DC bus bars are bridged between the positive terminal 532 and the capacitor module positive terminal, and between the negative terminal 572 and the capacitor module negative terminal. Can be easily connected) and a capacitor module and half It has become a low-inductance wiring structure by concatenating respective pole body module DC bus bars of the same shape of a simple structure.

  FIG. 21 is a diagram showing a terminal connection structure between the semiconductor module and the capacitor module according to this embodiment. FIG. 21 illustrates one side of the sandwich structure in which the capacitor module 390 is sandwiched between the semiconductor modules 500.

  A DC bus bar 393 protrudes from the capacitor module 390, and a positive terminal 394 and a negative terminal 395 of the condenser module are disposed at the end thereof, and a tip portion is planted with a comb-shaped terminal portion. Further, between the positive terminal 394 and the negative terminal 395, a thin plate-shaped capacitor module terminal insulating portion 396 that ensures insulation between these terminals is attached to the DC bus bar 393. The thin plate-shaped terminal insulating portion 396 is inserted into an insertion hole 583 formed in the upper surface of the semiconductor module, thereby positioning the terminal connection between the semiconductor module 500 and the capacitor module 390.

  By this positioning, the bonding between the positive terminal 532 of the semiconductor module and the positive terminal 394 of the capacitor module and the bonding between the negative terminal 572 of the semiconductor module and the negative terminal 395 of the capacitor module are fixed. That is, the comb-teeth shapes of both terminals to be joined are in close relationship with each other, for example, soldering work is facilitated, and the soldering is firmly fixed (the connection terminals of the capacitor module 390 and the semiconductor module are in a comb-teeth shape). This facilitates welding between the connecting terminals of the two and other fixed connections). As shown in the drawing, since the arrangement of the positive electrode terminal 532 and the negative electrode terminal 572 of the semiconductor module is juxtaposed with the opposing surface side of the capacitor module 390, the protruding structure of the positive electrode terminal 394 and the negative electrode terminal 395 of the capacitor module is provided. They can be identical to each other.

  In addition, since a plurality of semiconductor modules 500 are arranged along the fin longitudinal direction, the structure of the DC bus bar 393 of the capacitor module for each semiconductor module can be made the same.

  Next, the reduction in wiring inductance of the semiconductor module according to the present embodiment will be described with reference to FIGS. FIG. 22 is a structural layout illustrating the reduction of wiring inductance in the semiconductor module and the capacitor module according to this embodiment. FIG. 23 is an arrangement diagram on an equivalent circuit for explaining a reduction in wiring inductance in the semiconductor module and the capacitor module according to this embodiment. Since transient voltage rise and large heat generation of the semiconductor chip occur during the switching operation of the upper arm or the lower arm constituting the inverter circuit, it is desirable to reduce the inductance especially during the switching operation. Since the diode recovery current 600 is generated at the time of transition, the effect of inductance reduction will be described based on the recovery current of the lower arm diode 543 (corresponding to 66 in FIG. 2) as an example.

  The recovery current of the diode 543 is a current that flows through the diode 543 in spite of the reverse bias, and is generally said to be caused by carriers filled in the diode 543 in the forward state of the diode 543. Three-phase alternating current power is generated at the alternating current terminal 582 of the inverter circuit by conducting the conduction operation or the interruption operation of the upper arm or the lower arm constituting the inverter circuit in a predetermined order. Now, when the semiconductor chip 537 operating as the upper arm is switched from the conductive state to the cut-off state, the current of the stator winding of the motor generator 92 (see FIG. 2) is maintained via the lower arm diode 543. A reflux current flows. This return current is a forward current of the diode 543, and the inside of the diode is filled with carriers. Next, when the semiconductor chip 537 operating as the upper arm is switched from the cut-off state to the conductive state again, the recovery current caused by the carriers described above flows through the diode 543 of the lower arm. In steady operation, one of the upper and lower arm series circuits is always in the cut-off state, and no short-circuit current flows through the upper and lower arms, but transient current, for example, the diode recovery current flows through the series circuit composed of the upper and lower arms. .

  22 and 23, when the IGBT (switching semiconductor element) 537 operating as the upper arm of the upper and lower arm series circuit changes from OFF to ON, the IGBT 537, the diode 543 from the positive terminal 532 (corresponding to 57 in FIG. 2). The recovery current of the diode 543 flows through the negative electrode terminal 572 (corresponding to 58 in FIG. 2) through (indicated by an arrow in the figure). At this time, the IGBT 541 is in a cut-off state. Looking at the flow of this recovery current, as shown in FIG. 22, in the path from the chips 537 and 543 to the positive terminal 532 and the negative terminal 572, the conductor plates are arranged in parallel in the vertical direction, and the same current in the reverse direction Flows. As a result, the magnetic fields generated by the mutual currents cancel each other in the space between the conductor plates, and as a result, the inductance of the current path decreases.

  That is, the positive electrode side conductor plate 534 and the positive electrode terminal 532 and the negative electrode side conductor plate 574 and the negative electrode terminal 572 are in a laminated state in which the conductor plate 574 and the negative electrode terminal 572 are close to each other and face each other. FIG. 23 is an equivalent circuit of FIG. 22, in which the positive side conductor plate 534 and the equivalent coil 712 of the positive terminal 532 act on the negative side conductor 574 and the equivalent coil 714 of the terminal 572 in a direction to cancel the magnetic flux, and the inductance is reduced. Reduced.

  Further, looking at the recovery current path shown in FIG. 22, a loop-shaped path is generated following the reverse and parallel current path. As a current flows through the loop-shaped path, eddy currents 602 and 601 flow through the radiating fin (A side) and the radiating fin (B side), and the inductance of the loop-shaped path is reduced by the magnetic field canceling effect of the eddy current. Reduction effect occurs. In the equivalent circuit of FIG. 23, the phenomenon of generating an eddy current is equivalently expressed by inductances 722, 724, and 726. Since these inductances are arranged close to the metal plate, which is a heat radiating fin, the eddy current generated by induction cancels out the magnetic flux generated. As a result, the inductance of the semiconductor module is reduced by the eddy current effect. It becomes.

  As described above, the arrangement of the circuit configuration of the semiconductor module according to the present embodiment can reduce the inductance by the effect of the laminate arrangement and the effect of the eddy current. It is important to reduce the inductance during the switching operation, and in the semiconductor module of this embodiment, the series circuit of the upper arm and the lower arm is accommodated in the semiconductor module. For this reason, the inductance reduction effect in a transitional state is large, such as a reduction in inductance with respect to the recovery current of the diode flowing through the upper and lower arm series circuit.

  If the inductance is reduced, the induced voltage generated in the semiconductor module is reduced, so that a low-loss circuit configuration can be obtained, and the switching speed can be improved due to the small inductance. Further, when a plurality of semiconductor modules 500 including the above-described upper and lower arm series circuits 50 are connected in parallel and connected to each capacitor 90 in the capacitor module 95 to increase the capacity, the inductance of the semiconductor module 500 itself is reduced. As a result, the influence of variation in inductance due to the semiconductor module 500 in the power conversion device 100 is reduced, and the operation of the inverter device is stabilized.

  Further, when it is required to increase the capacity of the motor generator (for example, 400 A or more), it is necessary to increase the capacity of the capacitor. When a large number of individual capacitors 90 are connected in parallel and the DC bus bars 393 of the capacitors are arranged in parallel, The positive terminal 532 and the negative terminal 572 of each semiconductor module and the individual capacitor terminals are connected at equal distances, so that the current flowing through each semiconductor module is evenly distributed, and a well-balanced low-loss motor generator Operation can be achieved. Furthermore, the parallel arrangement of the positive electrode terminal and the negative electrode terminal of the semiconductor module allows a low-loss operation to be performed in combination with a reduction in inductance due to a laminating effect.

  As described above, the power conversion device according to the embodiment of the present invention uses a double-sided cooling type semiconductor module to reduce the size, improve the assembly property, and improve the cooling efficiency. In a substantially rectangular parallelepiped water channel housing with a water channel inlet and outlet, a capacitor module insertion part is formed at the center, and water channels connected to the water channel inlet and water channel outlet are formed on both sides of the center. A configuration in which a plurality of semiconductor modules are slotted into the water channel along the longitudinal direction of the radiating fins of the semiconductor module is defined as a basic structure. In this basic structure, the AC connector 1 and the AC connector 2 are provided on the side surface other than the side surface provided with the water channel inlet and outlet, and the DC connector is provided on the other side surface.

  In addition, on the upper surface of the capacitor module in this basic structure, a driver board for the upper and lower arm series circuit built in the semiconductor module is provided, and a control board is further provided on the upper part, so as to effectively use the upper surface space of the capacitor module. The overall configuration.

  Moreover, the pressure loss of a water channel is reduced by reducing the number of U-turn parts of a water flow by the water channel structure and the arrangement structure of a plurality of semiconductor modules shown in FIG. Further, the capacitor module and the water channel sandwich structure shown in FIG. 12 is configured so that the capacitor can also be cooled by the water channel cooling water. Further, the arrangement structure of the positive and negative terminals of the semiconductor module as shown in FIG. 13 can be coupled with the DC bus bar having the same structure as the corresponding terminals of the capacitor module, thereby enabling low inductance wiring. By arranging the driver board and the control board on the upper surface of the capacitor module, the upper surface of the capacitor module can be effectively used, and the driver board can be formed by a common driver board even in the power conversion device having two inverter circuits. In addition, the capacitor module can be positioned reliably and easily by forming the capacitor module insertion portion in the water channel casing formed of the lower case.

  Further, as shown in FIG. 14, the upper arm IGBT and the lower arm IGBT built in the semiconductor module are arranged with a length L along the water flow direction of the water channel, and similarly, the upper arm and lower arm diodes are also provided. Since it is arranged under the IGBT with a length M, there is no useless length in the height direction of the semiconductor module, leading to miniaturization. Moreover, since the IGBT which is the first cooling target occupies a water channel (length in the height direction of the fin portion) corresponding to L longer than M, the cooling efficiency is also improved.

  Next, another configuration example of the arrangement of the positive and negative terminals of the semiconductor module according to this embodiment will be described with reference to FIG. First, the positive electrode terminal 532 and the negative electrode terminal 572 of the semiconductor module shown in FIG. 21 were arranged in such a manner that the arrayed comb-like shapes were arranged vertically along the water flow direction of the radiating fin (A side) 522 (FIG. 13). See). According to FIG. 24, each comb-tooth shape of the positive electrode terminal 532 and the negative electrode terminal 572 is configured to face each other in the short direction of the semiconductor module. In other words, the comb-shaped array of the positive terminals 532 is arranged along the water flow direction on the radiating fin (A side) 522 side, and the comb-shaped array of the negative terminals 572 is arranged along the water flow direction on the radiating fin (B side) 562 side. And the comb tooth shape of the semiconductor module faces each other in the short direction of the semiconductor module, and only the arrangement of the positive terminal 532 and the negative terminal 572 is different from that of the structure of FIG. Of course, the terminal arrangement may be slightly different.)

  As shown in the figure, each conductor plate 534 (positive-side conductor plate) and 574 (negative-side conductor plate) is formed with a bent portion to form a comb-teeth shape of each terminal. It suffices to bend so as to face each other. A terminal insulating portion insertion hole 583 is provided between the conductor plates 534 and 574 of the terminals 532 and 572 of the semiconductor module so as to correspond to the terminal insulating portion 396 of the capacitor module. Corresponding to the arrangement structure of the positive electrode terminal and the negative electrode terminal of the semiconductor module 500 described above, the structure of the positive electrode terminal 394 and the negative electrode terminal 395 of the capacitor module 390 is also compared with that shown in FIG. The arrangement with the terminal insulation is changed by 90 degrees. That is, the other configuration example shown in FIG. 24 can be applied only by changing the structures of the positive terminal and the negative terminal of the semiconductor module and the capacitor module.

  Next, a configuration example of the water channel structure and the arrangement structure of a plurality of semiconductor modules according to the present embodiment will be described below with reference to FIGS. 25 and 26. FIG. 25 is a functional explanatory diagram showing one configuration example of the water channel structure and the arrangement structure of a plurality of semiconductor modules according to the present embodiment. FIG. 26 is a functional explanatory diagram illustrating another configuration example of the water channel structure and the arrangement structure of a plurality of semiconductor modules according to the present embodiment.

  In the figure, 142 is a lower case, 226 is a front-side inlet water channel, 227 is a front-side folded water channel, 228 is a front-side outlet water channel, 236 is a back-side folded water channel, 237 is a semiconductor module insertion water channel, 246 is a water channel inlet portion, 248 Is a water channel outlet, 258 is a water flow, 390 is a condenser module, 490 is a water channel forming body 1, 491 is a water channel forming body 2, and 500 is a semiconductor module.

  25A is a diagram for functionally explaining the water channel structure and the semiconductor module arrangement structure shown in FIG. 12, and the functions and operations thereof are as detailed in the explanation of FIG.

  FIG. 25B shows a modification of the water channel structure, which is intended to improve the cooling efficiency of the capacitor module and reduce the pressure loss in the flow path. The modification shown in FIG. 25B will be described in comparison with the example of FIG. 25A. In the case of FIG. 25A, the cooling water first cools the semiconductor module disposed in the vicinity of the inlet water channel 226. (Three semiconductor modules are inserted on the inlet water channel 226 side), the semiconductor module disposed in the vicinity of the outlet water channel 228 is cooled later. Therefore, the temperature of the cooling water contacting the semiconductor module near the inlet water channel 226 and the vicinity of the outlet water channel 228 can be biased, resulting in uneven cooling.

  On the other hand, since the thing of FIG. 25 (B) provides the water channel formation body 1 (490) in a back surface part, and forms the return water channel 236, it is arrange | positioned in the vicinity of the inlet water channel 226 and the outlet water channel 228. Since the semiconductor module 500 is cooled on the first surface (the radiating fin (A side) 522 or the radiating fin (B side) 562 shown in FIG. 13) first, and the other surface is cooled last, each semiconductor module There is an advantage that the cooling of 500 is relatively uniform.

  Further, FIG. 25C shows a modified example of the water channel structure, as shown in FIG. 25B, a folded water channel 236 is provided on the back surface, and the water channel forming body 1 (490) and the water channel forming body 2 (491) are illustrated. In addition, the plurality of semiconductor modules 500 are divided into three units, and each of the three units is arranged on each side of a rectangular housing. For example, the three units are U-phase, V-phase, and W-phase semiconductors. By dividing each module, thermal balance can be achieved for each phase. That is, there is an advantage that only one predetermined phase can be prevented from becoming high temperature.

  FIG. 26 shows a modification of the water channel structure, in which a water channel is formed on the back surface without providing a water channel forming body at the water channel inlet 226 and the water channel outlet 228. According to FIG. 26 (A), it is not necessary to provide the water channel forming bodies 490 and 491 over the entire length of the water channel leading to the water channel inlet and the water channel outlet, and the cost can be reduced. Moreover, compared with the water channel of FIG. 26 (A)-(C), the frequency | count of folding of a water channel can be reduced, and the flow velocity of the cooling water in each water channel falls by branching a water flow, and the pressure loss in a water channel is reduced. Can be reduced.

  Moreover, what is shown to FIG. 26 (B) arrange | positions a semiconductor module for every waterway side for every phase. Compared with the modified examples of FIGS. 25 (A) to (C), the number of times the water channel can be folded can be reduced, and the flow rate of the cooling water in each water channel can be reduced by branching the water flow, reducing the pressure loss in the water channel. Can be reduced.

10: Hybrid electric vehicle, 12: Front wheel, 14: Front wheel axle, 16: Front wheel side DEF, 18: Transmission, 20: Engine, 22: Power distribution mechanism, 23, 24, 25, 26: Gear, 27, 28, 29, 30: gear, 36: battery, 38: DC connector, 40, 42: inverter device, 44: inverter circuit, 45: inverter circuit 1, 46: inverter circuit 2, 50: series circuit of upper and lower arms, 50U1: inverter U phase serial circuit of circuit 1, 50U2: U phase series circuit of inverter circuit 2, 50V1: V phase series circuit of inverter circuit 1, 50V2: V phase series circuit of inverter circuit 2, 50W1: W phase series of inverter circuit 1 Circuit, 50W2: W-phase series circuit of inverter circuit 2,
52: Upper arm IGBT, 53: Upper arm collector electrode, 54: Upper arm gate (base) electrode terminal, 55: Upper arm signal emitter electrode terminal, 56: Upper arm diode, 57: Positive electrode (P ) Terminal, 58: negative electrode (N) terminal, 59: alternating current terminal, 62: lower arm IGBT, 63: lower arm collector electrode, 64: lower arm gate electrode terminal, 65: lower arm signal emitter electrode terminal , 66: lower arm diode, 69: intermediate electrode, 70: control unit, 72: control circuit (built in the control board 372), 74: driver circuit (built in the driver board 386), 76: signal line, 80: detection , 82: signal line, 86: AC power line (output bus bar), 88: AC connector 1, 89: AC connector 2, 90: capacitor (capacitor module 390) Collection), 91: AC connector flange, 92, 94: motor generator,
DESCRIPTION OF SYMBOLS 100: Power converter, 112: Upper case, 122: AC connector positioning part, 123: AC connector mounting part, 124: Upper case flange, 142: Lower case, 144: Water channel cover, 145: Module cover 1, 146: Module lid 2, 147: Capacitor module insertion part,
212: Water channel housing, 214: Main body of the water channel housing, 224: Front portion of the water channel housing, 226: Inlet water channel in the front portion, 227: Folded water channel in the front portion, 228: Outlet water channel in the front portion, 236: Folded water channel on the back side, 237: semiconductor module insertion channel, 246: water channel inlet, 248: water channel outlet, 250, 251, 252, 253: water flow, 254, 255, 256, 257: water flow,
372: Control board (with built-in control circuit), 373: Control IC1, 374: Control IC2, 386: Driver board, 387: Driver IC, 388: Signal connector, 390: Capacitor module, 391: AC bus bar 1, 392: AC Bus bars 2, 490: water channel former 1, 491: water channel former 2,
500: Semiconductor module, 501: Semiconductor module fixing part, 502: Semiconductor module positioning part, 507: Mold resin, 508: Side case, 512: Top case, 513: Mold resin filling part of top case, 516: Bottom case, 517 : Fitting part of bottom case, 522: radiating fin (A side), 532: positive electrode terminal, 534: conductor plate on the positive electrode side, 535: conductor plate for connecting upper and lower arms, 536, 538, 540, 542, 544: solder Layers, 537: IGBT chip (for upper arm), 539: diode chip (for upper arm), 541: IGBT chip (for lower arm), 543: diode chip (for lower arm),
544: solder layer, 546: insulating sheet (A side), 548: solder layer, 549: solder layer, 550: solder layer, 552: signal terminal (for upper arm), 553: gate terminal (for upper arm), 556: Signal terminal (for lower arm), 557: Gate terminal (for lower arm), 560: Junction (for connecting upper and lower arms), 562: Radiation fin (B side), 572: Negative terminal, 582: AC terminal 593: Gate wire (for upper arm), 596: Insulating sheet (B side), 597: Gate wire (for lower arm), 751: Solder joint (IGBT collector side), 752: Solder joint (diode cathode side) ), 753: Solder joint (IGBT collector side), 754: Solder joint (diode cathode side), 756: Solder joint (IGBT emitter side), 757 Solder joint (IGBT emitter side), 758: solder joints (diode anode side), 759: solder joints (diode anode side).

Claims (12)

First and second power semiconductor elements electrically connected in series to form an upper and lower arm series circuit ;
First and second DC terminals for supplying DC power to the upper and lower arm series circuit ;
A first conductor plate that is joined to the first power semiconductor element and transmits a current flowing through the first DC terminal to the first power semiconductor element;
A second conductor plate that is joined to the second power semiconductor element and transmits a current flowing through the second DC terminal to the second power semiconductor element ;
The first power semiconductor element includes a first switching element and a first diode element electrically connected in parallel.
The second power semiconductor element includes a second switching element and a second diode element electrically connected in parallel.
The first and second DC terminals each have a main surface wider than the other surface and a side surface narrower than the main surface,
When viewed from a direction perpendicular to the main surface of the first and second DC terminals,
The first and second DC terminals are arranged so that the principal surfaces of each other do not overlap each other,
The first DC terminal is disposed so as to overlap a column in which the first switching element and the first diode element are disposed,
The second DC terminal is a power disposed between a column in which the first switching element and the first diode element are disposed and a column in which the second switching element and the second diode element are disposed. Semiconductor module. First and second power semiconductor elements electrically connected in series to form an upper and lower arm series circuit;
First and second DC terminals for supplying DC power to the upper and lower arm series circuit;
A first conductor plate that is joined to the first power semiconductor element and transmits a current flowing through the first DC terminal to the first power semiconductor element;
A second conductor plate that is joined to the second power semiconductor element and transmits a current flowing through the second DC terminal to the second power semiconductor element;
The first power semiconductor element includes a first switching element and a first diode element electrically connected in parallel.
The second power semiconductor element includes a second switching element and a second diode element electrically connected in parallel.
The first and second DC terminals each have a main surface wider than the other surface and a side surface narrower than the main surface,
When viewed from a direction perpendicular to the main surface of the first and second DC terminals,
The first and second DC terminals are arranged so that the principal surfaces of each other do not overlap each other,
The first DC terminal is disposed on a region obtained by extending a region in which the first power semiconductor element is disposed in a direction perpendicular to the arrangement direction of the first and second power semiconductor elements,
The second DC terminal has a region between the region in which the first power semiconductor element is disposed and the region in which the second power semiconductor element is disposed in the first and second power semiconductor elements. A power semiconductor module arranged on a region extending in a direction perpendicular to the arrangement direction. First and second power semiconductor elements electrically connected in series to form an upper and lower arm series circuit;
First and second DC terminals for supplying DC power to the upper and lower arm series circuit;
A first conductor plate that is joined to the first power semiconductor element and transmits a current flowing through the first DC terminal to the first power semiconductor element;
A second conductor plate that is joined to the second power semiconductor element and transmits a current flowing through the second DC terminal to the second power semiconductor element;
The first power semiconductor element includes a first switching element and a first diode element electrically connected in parallel.
The second power semiconductor element includes a second switching element and a second diode element electrically connected in parallel.
The first and second DC terminals each have a main surface wider than the other surface and a side surface narrower than the main surface,
When viewed from a direction perpendicular to the main surface of the first and second DC terminals,
The connecting portion between the first DC terminal and the first conductor plate is perpendicular to the arrangement direction of the first and second power semiconductor elements in the region where the first power semiconductor element is arranged. Formed on a region extending in the direction,
The connecting portion between the second DC terminal and the second conductor plate has a region between a region where the first power semiconductor element is disposed and a region where the second power semiconductor element is disposed. A power semiconductor module formed on a region extending in a direction perpendicular to the arrangement direction of the first and second power semiconductor elements. First and second power semiconductor elements electrically connected in series to form an upper and lower arm series circuit;
First and second DC terminals for supplying DC power to the upper and lower arm series circuit;
A first conductor plate that is joined to the first power semiconductor element and transmits a current flowing through the first DC terminal to the first power semiconductor element;
A second conductor plate that is joined to the second power semiconductor element and transmits a current flowing through the second DC terminal to the second power semiconductor element;
The first power semiconductor element includes a first switching element and a first diode element electrically connected in parallel.
The second power semiconductor element includes a second switching element and a second diode element electrically connected in parallel.
The first and second DC terminals each have a main surface wider than the other surface and a side surface narrower than the main surface,
When viewed from a direction perpendicular to the main surface of the first and second DC terminals,
The first DC terminal is disposed on a region obtained by extending a region in which the first power semiconductor element is disposed in a direction perpendicular to the arrangement direction of the first and second power semiconductor elements,
The second DC terminal has the first DC terminal extending beyond a region in which the second power semiconductor element is disposed in a direction perpendicular to a direction in which the first and second power semiconductor elements are disposed. Power semiconductor module arranged on the side where the power semiconductor element is arranged The power semiconductor module according to any one of claims 1 to 4,
A third conductor plate facing the second conductor plate across the second power semiconductor element;
An AC terminal connected to the third conductor plate;
When viewed from a direction perpendicular to the main surface of the first and second DC terminals, the second DC terminal is a power semiconductor disposed between the first DC terminal and the AC terminal. module. The power semiconductor module according to claim 5, wherein
When viewed from a direction perpendicular to the main surface of the first and second DC terminals, the AC terminal has a region where the second power semiconductor element is disposed in the first and second power semiconductors. A power semiconductor module disposed on a region extending in a direction perpendicular to an element arranging direction. The power semiconductor module according to any one of claims 1 to 6,
The first DC terminal and the second DC terminal are power semiconductor modules arranged so that the side surfaces thereof face each other. The power semiconductor module according to any one of claims 1 to 7,
A third conductor plate facing the second conductor plate across the second power semiconductor element;
A fourth conductor plate facing the first conductor plate across the first power semiconductor element,
The third semiconductor plate and the fourth conductor plate are connected to each other on a side opposite to a side where the first and second DC terminals are arranged. The power semiconductor module according to claim 8, wherein
The third conductor plate and the fourth conductor plate are power semiconductor modules in which the first power semiconductor element is connected in an area between an arrangement area and an arrangement area of the second power semiconductor element. A power semiconductor module according to any one of claims 1 to 9,
And a conductive heat dissipating member arranged to face the first and second conductors. The power conversion device according to claim 10,
The said heat radiating member is a power converter device comprised including the 1st heat radiating member arrange | positioned with respect to the said power semiconductor module on the one side, and the 2nd heat radiating member arrange | positioned on the other side. The power conversion device according to claim 10 or 11,
A smoothing capacitor that smoothes the DC power;
A DC bus bar connecting the power semiconductor module and the smoothing capacitor,
The DC bus bar includes a first DC bus bar connected to the main surface of the first DC terminal, and a second DC bus bar connected to the main surface of the second DC terminal. Conversion device.