JP4186780B2 - Composite electronic component manufacturing method, composite electronic component, communication apparatus, and composite electronic component manufacturing apparatus - Google Patents

Description

  The present invention relates to a composite electronic component, in particular, a composite electronic component in which a non-reciprocal circuit element and a power amplifier used in a microwave band are modularized, a manufacturing method thereof, a communication device, and a composite electronic component manufacturing apparatus.

  In a communication device, in particular, a transmission circuit unit such as QPSK including an amplitude modulation component, or a transmission circuit unit that requires high reliability and high efficiency, a transmission signal is amplified by a power amplifier, and then an isolator and an antenna switching device ( Or, it is sent to the antenna via the antenna duplexer). This is because the reflection from the antenna or the antenna switching device returns to the power amplifier without passing through the isolator, and the load impedance viewed from the power amplifier is changed. The change in the load impedance causes problems such as an increase in waveform distortion of the transmission signal, an increase in current consumption of the power amplifier, and an unstable operation of the power amplifier.

  Therefore, a composite electronic component combining an isolator and a power amplifier has been conventionally manufactured (for example, see Patent Document 1). Here, the conventional composite electronic component was manufactured according to the manufacturing flowchart shown in FIG. That is, as shown in steps S1 to S3 and steps S6 and S7, after the power amplifier and the isolator are assembled independently, the power amplifier is subjected to bias adjustment and large signal characteristic selection in steps S4 and S5. In steps S8 and S10, the magnetic force of the permanent magnet is adjusted and the electrical characteristics are selected. Thereafter, in step S11, the power amplifier and the isolator are mounted on the same substrate and integrated to form a composite electronic component.

It is well known to adjust the magnetic force of a permanent magnet with a single isolator as described in Patent Document 2.
JP 2002-290170 A JP 2002-330004 A

  By the way, linear power amplifiers, particularly power amplifiers with high power added efficiency for mobile communication devices such as mobile phones, have the following problems unless the load impedance viewed from the output end is within a certain range.

  (1) A large amount of power supply current flows, power added efficiency is degraded, and the battery duration of the mobile communication device is short.

  (2) The linearity (similarity of input / output waveforms) of the power amplifier is deteriorated, the distortion component of the output waveform is increased, and the communication error rate is increased. For this reason, the communication speed is reduced, and communication of nearby mobile communication devices is adversely affected.

  Here, when an isolator is connected to the subsequent stage of the power amplifier, the load impedance viewed from the output terminal of the power amplifier corresponds to the input impedance of the isolator. The input impedance of the isolator is adjusted by adjusting the magnetic force of the permanent magnet in step S8 in FIG. 17, and is selected by selecting the electrical characteristics in step S10. On the other hand, in the power amplifier, bias adjustment and large signal characteristic selection are performed in steps S4 and S5 of FIG. 17, but the optimum load impedance value (the power amplifier can realize high efficiency and low output distortion ratio in the load impedance range) is also provided. It varies from power amplifier to power amplifier. Therefore, when the isolator and the power amplifier are combined in step S11, there are cases where the current standard and the distortion standard are not satisfied.

  Therefore, in order to prevent such a problem, it is necessary to strictly define and select the electric characteristics of the power amplifier and the isolator in steps S5 and S10. As a result, the adjustment time in steps S4 and S8 increases, and the defect rate in steps S5 and S10 increases, resulting in an increase in manufacturing cost.

  In the conventional method of manufacturing a composite electronic component, the power amplifier and the isolator are separately assembled, adjusted, and sorted, and then combined and adjusted again and sorted. For this reason, for example, there are overlapping processes such as the large signal characteristic selection in steps S5 and S13, and there is a problem that the manufacturing process is complicated and wasteful.

  Furthermore, when manufacturing a composite electronic component, solder or a thermosetting conductive adhesive is used as shown in steps S3, S7, and S12. The product is heated when reflowing or curing the solder and the thermosetting conductive adhesive. However, the reliability of semiconductor components used in power amplifiers deteriorates as heating is repeated and as the heating time increases. The internal electrode of the isolator also deteriorates in electrical characteristics (especially insertion loss characteristics) due to surface oxidation due to heating in steps S7 and S12. Further, since the solder used in assembling the power amplifier and the isolator in steps S3 and S7 is exposed to the reflow heat in step S12, the oxidation of the solder proceeds and the connection reliability is lowered.

  Accordingly, an object of the present invention is to provide a composite electronic component manufacturing method, a composite electronic component, a communication device, and a composite electronic component manufacturing apparatus with a low defect rate, low manufacturing cost, and high reliability. is there.

In order to achieve the above object, a method of manufacturing a composite electronic component according to the present invention includes a permanent magnet, a ferrite to which a DC magnetic field is applied by the permanent magnet, and a plurality of ferrites arranged in an electrically insulated state. A nonreciprocal circuit element having a central electrode of the nonreciprocal circuit element is obtained by electrically connecting and integrating a power amplifier unit to form a composite electronic component and then changing the magnetic flux density of the permanent magnet. By adjusting the input impedance of the unit, the composite electronic component is adjusted so that at least one of the power added efficiency, the output wave distortion factor, and the current consumption value has a desired value .

  According to the above method, for example, instead of simply matching the input impedance of the non-reciprocal circuit element unit to a predetermined impedance, the composite electronic component is configured by combining the non-reciprocal circuit element unit and the power amplifier unit, The input impedance of the nonreciprocal circuit element unit is adjusted so that the large signal characteristic of the electronic component satisfies the required value. Thereby, even if the optimum load impedance value of the power amplifier unit varies, the input impedance of the nonreciprocal circuit element unit can be matched with the optimum load impedance value of the power amplifier unit.

Adjustment of the electrical characteristics of the non-reciprocal circuit element portion is performed by changing the magnetic flux density of the permanent magnet. The change in the magnetic flux density of the permanent magnet is, for example, by applying a magnetic field in a certain direction to the permanent magnet until the residual magnetic flux density is saturated, and then applying a magnetic field in the opposite direction to the permanent magnet to obtain a desired residual magnetic flux. This is done by reducing to density.

  The composite electronic component according to the present invention is manufactured by the manufacturing method having the above-described characteristics, and the communication device according to the present invention includes the composite electronic component manufactured by the manufacturing method having the above-described characteristics. It is a thing.

Furthermore, the composite electronic component manufacturing apparatus according to the present invention includes at least one of the current consumption value and the output wave distortion factor of the composite electronic component in which the power amplifier unit is electrically connected to the nonreciprocal circuit element unit. A measuring instrument that measures two characteristics , an arithmetic unit that determines an adjustment amount of the input impedance of the nonreciprocal circuit element unit based on a measurement result of the measuring instrument so that the characteristic satisfies a desired value , and an arithmetic unit And an adjuster that adjusts the input impedance by changing the magnetic flux density of the permanent magnet of the nonreciprocal circuit element unit.

According to the present invention, after the nonreciprocal circuit element unit and the power amplifier unit are connected and integrated to form a composite electronic component , any one of the power added efficiency, output wave distortion rate, and current consumption value of the composite electronic component Since the input impedance of the nonreciprocal circuit element unit is adjusted while measuring one characteristic , the occurrence of defects is reduced and the yield can be improved. In addition, it is not necessary to select power amplifiers and non-reciprocal circuit elements according to strict standards in advance, and it is possible to reduce manufacturing costs and manufacturing processes. Moreover, the electrical characteristics of the finished product are better than the conventional product, and there is little variation.

  Embodiments of a composite electronic component manufacturing method, composite electronic component, communication apparatus, and composite electronic component manufacturing apparatus according to the present invention will be described below with reference to the accompanying drawings.

[First embodiment, FIGS. 1 to 9]
FIG. 1 is an exploded perspective view of a composite electronic component 50 including an isolator 1 and a power amplifier 30. FIG. 2 is an exploded perspective view of the dielectric multilayer substrate 6, and FIG. 3 is an electric circuit diagram of the composite electronic component 50.

  The isolator 1 is a three-port lumped constant type isolator. In general, the lower metal case 4, the dielectric multilayer substrate 6, the center electrode assembly 13, the upper metal case 8, the permanent magnet 9, and the termination resistance R1 and matching capacitors C1 to C3 are provided.

  The metal lower case 4 and the metal upper case 8 are formed of a material made of a ferromagnetic material such as soft iron in order to form a magnetic circuit. The surface is plated with Ag or Cu to improve the insertion loss characteristics.

  The dielectric multilayer substrate 6 is manufactured as follows, for example. That is, as shown in FIG. 2, the dielectric multilayer substrate 6 is a dielectric sheet provided with electrodes P1 to P3, 71 to 73, 81 to 85, 88, 89, coil conductors L17 and L18, via holes 75, and the like. 61 to 63, a metal case connection ground electrode 85, and a via hole 86. However, the dielectric multilayer substrate 6 shown in FIG. 2 displays only the coil conductors L17 and L18, the capacitor C23, the matching capacitors C1 to C3 and the termination resistor R1 that are components of the isolator 1. Absent. Conductor patterns and via holes that connect chip components that are components of the power amplifier 30 are omitted.

The dielectric sheets 61 to 63 are made of alumina, a mixed material of alumina powder and glass powder (low temperature sintered dielectric material), or the like. Further, a shrinkage suppression sheet 67 that does not fire under the firing conditions of the dielectric multilayer substrate 6 (particularly at a firing temperature of 1000 ° C. or less) and suppresses firing shrinkage in the substrate plane direction (XY direction) of the dielectric multilayer substrate 6 is produced. To do. The material of the shrinkage suppression sheet 67 is a mixed material of alumina powder and stabilized zirconia powder.

  The electrodes P1-P3, 71-73, 81-85, 88, 89 and the coil conductors L17, L18 are formed on the sheets 61-63, 67 by a method such as pattern printing. As a material for the electrodes P1 to P3 and the like, Ag, Cu, Ag—Pd or the like that has a low resistivity and can be fired simultaneously with the dielectric sheets 61 to 63 is used.

  The termination resistor R1 is formed on the surface of the dielectric sheet 62 by a method such as pattern printing. As the material of the termination resistor R1, cermet, ruthenium or the like is used.

  The via holes 75 and 86 are formed by forming via hole holes in the sheets 61 to 63 and 67 in advance by laser processing or punching and filling the via hole holes with a conductive paste. Generally, as the material of the conductive paste, the same electrode material (Ag, Cu, Ag—Pd, etc.) as the electrodes P1 to P3 is used.

  Capacitor electrodes 81, 82, 83 constitute matching capacitors C 1, C 2, C 3 so as to face the common electrode 84 with the dielectric sheet 62 interposed therebetween. Further, the capacitor electrode 88 is opposed to the capacitor electrode 89 with the dielectric sheet 62 interposed therebetween to constitute a capacitor C23. The capacitors C1 to C3 and C23 and the termination resistor R1 together with the electrodes P1 to P3 and 71 to 73 and the signal via hole 75 constitute an electric circuit inside the dielectric multilayer substrate 6.

  The above dielectric sheets 61 to 63 are laminated, and further, a shrinkage suppression sheet 67 is laminated on the top and bottom thereof, and then fired. Via holes 86 formed at the edge of the sheet 67 are laminated and fired to be connected in the stacking direction of the sheets 67 so as to be integrated with each other, and are connected to the bottom surface of the dielectric multilayer substrate 6. Terminal electrode 86. Thereby, a sintered body is obtained, and then the unsintered shrinkage suppression material is removed by an ultrasonic cleaning method or a wet honing method to obtain a dielectric multilayer substrate 6 as shown in FIG. A terminal electrode 86 protrudes from the bottom surface of the dielectric multilayer substrate 6.

  In the center electrode assembly 13, three sets of center electrodes 21 to 23 are arranged on the upper surface of the rectangular plate-shaped microwave ferrite 20 so as to intersect with each other at approximately 120 degrees with an insulating layer (not shown) interposed therebetween. ing.

  As shown in FIG. 3, in the isolator 1, the hot end of the center electrode 21 is electrically connected to the input end 46 of the isolator 1, and the hot end of the center electrode 22 is electrically connected to the output terminal 47. The cold ends of the center electrodes 21, 22, and 23 are electrically connected to ground.

  A parallel circuit of a matching capacitor C3 and a termination resistor R1 is electrically connected between the hot end of the center electrode 23 and the ground. Matching capacitors C1 and C2 are electrically connected between the hot ends of the center electrodes 21 and 22 and the ground, respectively.

  On the other hand, as shown in FIG. 3, the power amplifier 30 is formed by connecting field effect transistors Tr1 and Tr2 as amplification elements in two stages. The first-stage transistor Tr1 is electrically connected to the final-stage transistor Tr2 via the interstage matching circuit 32. A bias circuit including a resistor R13 and a capacitor C13 is electrically connected to the source of the first stage transistor Tr1. The source of the final stage transistor Tr2 is electrically connected to the ground.

  The interstage matching circuit 32 is electrically connected between the drain of the first stage transistor Tr1 and the gate of the final stage transistor Tr2 and electrically connected in series between the inductor L14 and the capacitor C15, and between the drain of the first stage transistor Tr1 and the ground. The inductor L13 and the capacitor C14 are connected, the inductor L15 and the capacitor C16 are electrically connected between the gate of the final stage transistor Tr2 and the ground, and the voltage dividing resistors R14 and R15. Reference numeral 43 denotes a drain power supply terminal of the first stage transistor Tr1, and reference numeral 44 denotes a gate bias power supply terminal of the final stage transistor Tr2.

  The first-stage transistor Tr1 is electrically connected to the input terminal 41 via the input matching circuit 31. The input matching circuit 31 includes an inductor L12 and a capacitor C11 electrically connected in series between the gate of the first-stage transistor Tr1 and the input terminal 41, and an inductor L11 electrically connected to a connection point between the inductor L12 and the capacitor C11. And a capacitor C12 and voltage dividing resistors R11 and R12. Reference numeral 42 denotes a gate bias power supply terminal of the first stage transistor Tr1.

  The final stage transistor Tr2 is electrically connected to the input terminal 46 of the isolator 1 via the output matching circuit 33 and the low-pass filter 34. The output matching circuit 33 includes an inductor L18 and a capacitor C22 electrically connected in series between the drain of the final stage transistor Tr2 and the output terminal A of the power amplifier 30, and between the drain of the final stage transistor Tr2 and the ground. And an inductor L17 and an RF bypass capacitor C10 that are electrically connected to each other, and a capacitor C23 that is electrically connected between the connection point of the inductor L18 and the capacitor C22 and the ground. Reference numeral 48 denotes a drain power supply terminal of the final stage transistor Tr2.

  The low-pass filter 34 includes an inductor L16 electrically connected in series between the output terminal A of the power amplifier 30 and the input terminal 46 of the isolator 1, and capacitors C17 and C18 shunt-connected to the inductor L16. It is configured.

  In the case of the first embodiment, the capacitors C11 to C17 and C22, the inductors L11 to L16, the resistors R11 to R15, and the transistors Tr1 and Tr2 are chip-type electronic components and are mounted on the dielectric multilayer substrate 6. However, the capacitors C18 and C23 and the inductors L17 and L18 are built in the dielectric multilayer substrate 6.

  The composite electronic component 50 having the above configuration operates normally when a power supply current is supplied to the power amplifier 30 via the isolator 1.

  Next, a method for manufacturing the composite electronic component 50 will be described with reference to a manufacturing flowchart shown in FIG.

  First, in step S1, a semiconductor chip component incorporating the transistors Tr1 and Tr2 is mounted on the dielectric multilayer substrate 6 to which the heat conductive adhesive is applied, and the heat conductive adhesive is cured in an oven. Thereafter, the bonding pads of the semiconductor chip parts and the bonding pads of the dielectric multilayer substrate 6 are connected by wire bonding. Then, if necessary, the semiconductor chip component mounting portion is covered with a sealing resin that protects the semiconductor chip component and cured.

  Next, in step S2, after solder paste is applied to the soldering pads of the dielectric multilayer substrate 6 by a method such as printing, capacitors C11 to C1 which are chip components (passive components) of the power amplifier 30 and the low-pass filter 34 are applied. C17 and C22, inductors L11 to L16, and resistors R11 to R15 are mounted.

  Further, in step S3, the lower metal case 4 of the isolator 1 is joined to the ground electrode 85 provided on the lower surface of the dielectric multilayer substrate 6 via a solder paste. The permanent magnet 9 is disposed on the ceiling of the metal upper case 8. A chip-type bypass capacitor C10 and a center electrode assembly 13 are mounted on the dielectric multilayer substrate 6 via a solder paste.

  And the metal case is formed by joining the side part 4b of the metal lower case 4 and the side part 8b of the metal upper case 8 with a solder paste or the like. This metal case also functions as an electromagnetic shield, a ground terminal, and a yoke. The permanent magnet 9 applies a DC magnetic field to the ferrite 20.

  In step 4, the solder paste is reflow soldered. If necessary, the bias currents of the transistors Tr1 and Tr2 of the power amplifier 30 are adjusted in step S5. In the first embodiment, laser trimmable resistors are used as the voltage dividing resistors R11, R12, R14, and R15 mounted on the dielectric multilayer substrate 6. Then, the laser beam is applied to the voltage dividing resistors R11, R12, R14, and R15 through the opening 8a provided in the metal upper case 8, and laser trimming is performed to adjust the bias current.

  Further, if necessary, in step S6, the bias magnetic field of the permanent magnet 9 of the isolator 1 is adjusted in advance to adjust the electrical characteristics (input impedance) of the isolator 1 to some extent. This is because if the isolator 1 having an inappropriate input impedance is connected to the power amplifier 30, the power amplifier 30 performs an unstable operation (for example, an oscillation operation) in step S7 in the subsequent process. At this time, the isolator 1 whose electric characteristics do not satisfy a predetermined standard may be excluded as a rejected product.

  Next, in step S7, using the manufacturing apparatus 100 shown in FIG. 5, while measuring a large signal characteristic as a power amplifier of the composite electronic component 50, the measured value of the isolator 1 is adjusted to a desired value. Electrical characteristics (input impedance in the first embodiment) are adjusted. More specifically, the bias magnetic field (magnetic flux density) of the permanent magnet 9 is adjusted. The method of adjusting by changing the magnetic flux density of the permanent magnet 9 is an electrical method of applying a magnetic field from the outside, and it is not necessary to open the assembled composite electronic component 50. As a result, it can be adjusted in a short time, with low man-hours and high reliability. Trimming the matching capacitor inside the isolator with a tool such as a laser or diamond leuter may adversely affect the reliability of assembled composite electronic components, such as the generation of scattered objects. Since it increases, it is disadvantageous in cost.

  The manufacturing apparatus 100 includes a control computer 101, a power amplifier power and current / voltage measuring instrument 102, a power amplifier large signal high frequency measuring instrument 103, a charge / discharge control circuit and capacitor 104, and a magnetic field adjusting power supply 105. And a magnetic field adjusting coil 106 and a measuring jig 107. The composite electronic component 50 is set on the measurement jig 107.

  As a measurement item of the large signal characteristic of the power amplifier, the efficiency (particularly, power added efficiency) or the output wave distortion factor of the power amplifier is preferable. This is because, among the large signal characteristics of the power amplifier, it is the power added efficiency and the output wave distortion that are most affected by a minute change in load impedance. On the other hand, among the large signal characteristics, harmonic power ratio, large signal gain, input VSWR, output VSWR, gate current (when the amplifying element is a FET), base current (when the amplifying element is a transistor), The stability (oscillation resistance) is relatively less affected by small changes in load impedance. Therefore, the most important measurement items to be used as an index (parameter) when adjusting the load impedance of the power amplifier 30 (= input impedance of the isolator 1) are the power added efficiency and the output wave distortion factor.

  Since the power added efficiency cannot be directly measured, the input power, output power, and power consumption of the composite electronic component 50 are measured and calculated. As for power consumption, generally, a voltage is kept constant and a current consumption value is measured. The power added efficiency is generally a standard at the rated output power. Therefore, after adjusting the input power value to the composite electronic component 50 so that the output power of the composite electronic component 50 becomes the rated value based on the data obtained by the large signal high-frequency measuring instrument 103 for the power amplifier, the power amplifier The power supply current is measured by the power supply and current / voltage measuring instrument 102, the power added efficiency is calculated, and it is confirmed whether the value exceeds the standard value. However, if the power gain of the composite electronic component 50 is high (constant) between the products, and the output power value dependency of the power added efficiency is not extremely large, the power is input to the composite electronic component 50. By making the power constant, it is possible to measure the power added efficiency by regarding the output power value of the composite electronic component 50 as a substantially rated output power.

  In addition, as a measurement item of the output wave distortion factor, an item necessary for each application of the composite electronic component 50 is selected. Typical examples include adjacent channel leakage power (ACP) or adjacent channel leakage power ratio (ACPR), modulation accuracy, harmonic (second harmonic, third harmonic, fourth harmonic, fifth harmonic) power or harmonic power ratio. and so on. For example, in the case of a communication apparatus that uses PSK or QPSK as a modulation scheme or primary modulation, the adjacent channel leakage power ratio is used. Therefore, when adjusting the composite electronic component 50 used in these modulation system applications, it is preferable to adjust the magnetic flux density of the permanent magnet 9 of the isolator 1 based on the measured values of the adjacent channel leakage power ratio and the power added efficiency. .

  Further, in the case of a communication apparatus using OFDM as a modulation scheme or primary modulation, modulation accuracy is used. Therefore, when adjusting the composite electronic component 50 used in these modulation system applications, it is preferable to adjust the isolator 1 based on the measured values of modulation accuracy and power added efficiency.

  Even at the harmonic frequency, the input impedance of the isolator 1 can be slightly changed by adjusting the magnetic flux density of the permanent magnet 9. There is a correlation that the harmonic power generated in the power amplifier 30 increases as matching with the isolator 1 at the harmonic frequency is achieved. Therefore, by selecting the harmonic power ratio as the measurement item of the output wave distortion factor, the magnetic flux density of the permanent magnet 9 of the isolator 1 is adjusted while measuring the harmonic power ratio. Harmonic power can be minimized.

  Moreover, as a method of adjusting the bias magnetic field of the permanent magnet 9 of the isolator 1, for example, there are the following two methods. In the first method, a DC magnetic field is generated in the magnetic field adjustment coil 106 in accordance with instructions from the control electronic calculator 101 to the magnetic field adjustment power supply device 105, the charge / discharge control circuit and the capacitor 104. Then, this DC magnetic field is applied to the isolator 1, and the strength of the applied magnetic field is increased and removed as necessary, and the residual magnetic flux density remaining in the permanent magnet 9 at that time is increased.

  In the second method, a sufficiently strong DC magnetic field is generated by the magnetic field adjustment coil 106. Then, the sufficiently strong DC magnetic field is applied to the isolator 1 to be removed, and the residual magnetic flux density remaining in the permanent magnet 9 is once increased to a value sufficiently higher than a necessary value (generally to a degree of saturation). Thereafter, a DC magnetic field in the reverse direction is generated in the magnetic field adjusting coil 106, the DC magnetic field in the reverse direction is applied to the isolator 1, and the strength of the applied magnetic field is increased and removed as necessary. In other words, the residual magnetic flux density remaining in the permanent magnet 9 is lowered.

  According to the second method, since the magnetization is lost in order from the unstable magnetizing element (micro magnet) in the permanent magnet 9, the adjusted magnetic flux density is stabilized, and the highly reliable composite electronic component 50 is obtained. Can be provided. In addition, the magnetic field applied to the composite electronic component 50 at the time of adjustment may be relatively weak (1000 to 3000 oersted) that lowers the magnetic flux density of the permanent magnet 9, and 8000 to 20000 oersted to magnetize the permanent magnet 9. Not as powerful as the degree. Therefore, it is not necessary to generate a strong magnetic field in the vicinity of the power amplifier large-signal high-frequency measuring instrument 103 used for adjustment (an oscillator that controls the measuring frequency with a magnetic field is used in the measuring instrument 103). Degradation and possible failure of the measuring instrument 103 can be prevented.

  In either of the above two methods, or in both forward and reverse directions, the magnetic field to be applied is pulsed (such that the time during which a magnetic field of 90% or more of the peak value is generated is 3 seconds or less, for example) It may be a magnetic field in a short time. In that case, it is preferable to charge a capacitor having a large charge / discharge current standard from a power supply device having a relatively small current capacity, and discharge the capacitor to the exciting coil. As a result, an inexpensive small-capacity power supply device can be used, and power consumption is reduced. Further, the heat generation amount of the exciting coil can be further reduced.

  The adjustment of the magnetic flux density of the permanent magnet 9 of the isolator 1 will be described in more detail. FIG. 6 is a Smith chart showing the input impedance trajectory of each isolator 1 when the magnetic flux density of the permanent magnet 9 of the isolator 1 is 1100 gauss, 1150 gauss, 1200 gauss, 1250 gauss and 1300 gauss. In FIG. 6, the upper end of each locus corresponds to the input impedance at the frequency at the upper end of the use band, and the lower end of each locus corresponds to the input impedance at the frequency at the lower end of the use band. This input impedance characteristic is at the output end of the power amplifier 30 (corresponding to point A in FIG. 3). As the magnetic flux density of the permanent magnet 9 is weakened, the real part of the input impedance of the isolator 1 increases.

  On the other hand, FIG. 7 shows a load impedance-current consumption Id correlation diagram (indicated by a dotted line) and a load impedance-adjacent channel leakage power ratio (ACPR) correlation diagram in a state where the output power of the power amplifier 30 is kept at 30 dBm. (Indicated by a one-dot chain line) (hereinafter referred to as a load characteristic diagram). That is, this load characteristic diagram is at the output end of the power amplifier 30 (corresponding to point A in FIG. 3). FIG. 7 shows the measurement result near the center frequency in the use band, but there is no significant difference in the frequencies at the upper and lower ends of the use band.

  Here, it is assumed that the load characteristics at the output end of the power amplifier 30 are in the state shown in FIG. 8 when the magnetic flux density of the permanent magnet 9 of the isolator 1 is set to 1300 gauss by initial adjustment. From FIG. 8, it is recognized that the adjacent channel leakage power ratio (ACPR) increases to about −37 dBc in the range from the frequency at the lower end of the use band to the center frequency, and the output distortion of the power amplifier 30 is large. On the other hand, the consumption current Id is at a level with no problem.

  In order to improve the output distortion of the power amplifier 30, the magnetic flux density of the permanent magnet 9 is reduced to 1200 gauss. The result is shown in FIG. The consumption current Id is suppressed to 0.47 A or less although there is a deviation within the range of the use band. On the other hand, the adjacent channel leakage power ratio is suppressed to −50 dBc or less within the range of the use band, and it can be seen that the output distortion of the power amplifier 30 is reduced. However, it can be estimated from FIGS. 6 and 7 that the current consumption Id and the output distortion increase when the magnetic flux density of the permanent magnet 9 is lower than 1200 gauss.

  The actual load characteristic diagram of the power amplifier 30 varies from one to another. Therefore, even if the isolator 1 is managed in a specific strict input impedance state as in the prior art, all the power amplifiers 30 cannot be brought into the best operating state. Further, if all the isolators 1 are managed in a strict input impedance state for production, the adjustment time becomes long and many defective products are generated, resulting in an increase in cost. On the other hand, by adjusting the first embodiment, it is possible to adjust the isolator 1 so that the power amplifier 30 is in the best operating state in accordance with the load characteristics of each power amplifier 30 that vary individually. it can.

  Next, in step S8, the composite electronic component 50 is heat-treated (aged), and then in step S9, the large signal characteristics of the composite electronic component 50 are measured, and the acceptable product is selected.

  According to the above method, after the composite electronic component 50 is configured by combining the isolator 1 and the power amplifier 30, the large signal characteristics (such as power added efficiency and adjacent channel leakage power ratio) of the composite electronic component 50 satisfy the required values. Thus, the input impedance of the isolator 1 is adjusted. Thereby, even if the optimum load impedance value of the power amplifier 30 varies, the input impedance of the isolator 1 can be matched with the optimum load impedance value of the power amplifier 30.

  As a result, it is possible to greatly reduce the occurrence of defects related to the large signal characteristic standard value, and it is possible to provide the composite electronic component 50 with high performance and low cost. Further, it is no longer necessary to adjust the isolator 1 and the power amplifier 30 in advance according to strict standards, and the semi-finished product (isolator or power amplifier alone in the preliminary selection in steps S5 and S10 in the conventional manufacturing method shown in FIG. Semi-finished products) are no longer defective. In addition, since adjustment and selection with an isolator alone and adjustment and selection with a power amplifier alone can be omitted, the manufacturing process and manufacturing equipment can be simplified.

  Moreover, a heating process can be reduced compared with the conventional manufacturing method combined after manufacturing and adjusting a semi-finished product beforehand. Therefore, the reliability of semiconductor chip components, soldered joints, joints using thermal conductive and conductive adhesives, thermocompression joints such as wire bonding, and the like is improved, and the highly reliable composite electronic component 50 is provided. It becomes possible.

  In addition, since the electrical characteristics of the isolator 1 are adjusted using the manufacturing apparatus 100 shown in FIG. 5, the adjustment amount of the electrical characteristics of the isolator 1 is determined by the control electronic calculator 101 so that the composite electronic component 50 Automatic adjustment can be performed so as to satisfy desired electrical characteristic items. Furthermore, the number of times that adjustment and re-measurement are repeated can be minimized, and the production capacity of the production facility can be maximized by reducing production time and man-hours. Further, the characteristic variation of the product can be set small, and the characteristic variation can be slightly increased to increase the adjustment speed. As a result, product performance (characteristic variation) and product cost can be optimized.

  Further, by designing the manufacturing apparatus 100 so that the program can be easily changed or exchanged for each manufactured item, the “adjustment know-how” for each item can be easily switched and produced. For example, the relationship between the measurement result and the adjustment content of the isolator 1 is different depending on whether or not the low-pass filter 33 is provided between the power amplifier 30 and the isolator 1. However, if the adjustment device can be easily reprogrammed, varieties having such different adjustment characteristics can be easily put on the same line.

[Second Embodiment, FIGS. 10 to 12]
The composite electronic component of the second embodiment is obtained by omitting the low-pass filter 34 from the composite electronic component 50 described in the first embodiment. Therefore, the detailed description about the structure is abbreviate | omitted.

  FIG. 10 shows the input impedance of each isolator 1 when the magnetic flux density of the permanent magnet 9 of the isolator 1 is 1100 gauss, 1150 gauss, 1200 gauss, 1250 gauss and 1300 gauss in the composite electronic component of the second embodiment. It is a Smith chart which shows a locus. In FIG. 10, the upper end of each locus corresponds to the input impedance at the frequency at the lower end of the use band, and the lower end of each locus corresponds to the input impedance at the frequency at the upper end of the use band. This input impedance characteristic is at the input end 46 of the isolator 1. Unlike the first embodiment, as the magnetic flux density of the permanent magnet 9 is weakened, the real part of the input impedance of the isolator 1 becomes smaller.

  On the other hand, the load characteristic diagram of the power amplifier 30 is the same as that shown in FIG. 7, and corresponds to the output end of the power amplifier 30 (corresponding to point A in FIG. 3. In the case of the second embodiment, a low-pass filter is used. 34, the point A and the input end 46 of the isolator 1 are at the same potential).

  Here, it is assumed that when the magnetic flux density of the permanent magnet 9 of the isolator 1 is set to 1300 gauss by initial adjustment, the load characteristic at the output end of the power amplifier 30 is in a state as shown in FIG. From FIG. 11, it is recognized that the current consumption Id increases to 0.50 A or more in the range from the lower end frequency of the use band to the center frequency, and the power load efficiency of the power amplifier 30 is deteriorated. On the other hand, the adjacent channel leakage power ratio is also increased to about −45 dBc, and it is recognized that the output distortion of the power amplifier 30 is large.

  Therefore, in order to improve these problems, the magnetic flux density of the permanent magnet 9 is reduced to 1200 gauss. The result is shown in FIG. The consumption current Id is suppressed to 0.45 A or less although there is a deviation within the range of the use band. On the other hand, the adjacent channel leakage power ratio is suppressed to −50 dBc or less within the range of the use band, and it can be seen that the output distortion of the power amplifier 30 is reduced. However, when the magnetic flux density of the permanent magnet 9 is made lower than 1200 gauss, it can be inferred from FIGS. 10 and 7 that the output distortion increases rapidly although the current consumption Id is not a problem.

  On the contrary, when the magnetic flux density of the permanent magnet 9 after the initial adjustment is too small, the current consumption Id is small, but the adjacent channel leakage power ratio is large. In such a case, the output distortion may be reduced by adjusting the magnetic flux density of the permanent magnet 9 of the isolator 1 to increase.

[Third embodiment, FIG. 13]
FIG. 13 is a flowchart showing another embodiment of the method for manufacturing a composite electronic component according to the present invention. Since the manufacturing method of the third embodiment is the same as the manufacturing method of the first embodiment from step S1 to S5, detailed description thereof is omitted.

  In step 6, the magnetic flux density of the permanent magnet 9 is adjusted with the isolator 1 alone, and the electrical characteristics of the isolator 1 are measured. Then, only the composite electronic component 50 including the isolator 1 having a predetermined electrical characteristic is sent to step S7.

  After heat treatment (aging) in step S7, the large signal characteristics are measured in step S8. The composite electronic component 50 whose measurement result in step S8 has passed a preset standard value is regarded as a product. On the other hand, the composite electronic component 50 for which the measurement result in step S8 has failed passes through the permanent isolator 1 while measuring the large signal characteristic so that the measured value of the large signal characteristic becomes a desired value in step S9. The magnetic flux density of the magnet 9 is adjusted.

  The above manufacturing method is an effective method when the product has a large signal characteristic with a sufficient margin with respect to the standard. In other words, this method requires only one measurement of the large signal characteristic for the composite electronic component 50 that has passed in step S8. Large signal characteristics evaluation takes a long time and the measuring device is expensive. Therefore, the fact that only one large signal characteristic measurement is required leads to a reduction in manufacturing cost.

[Fourth embodiment, FIG. 14]
FIG. 14 is a flowchart showing still another embodiment of the method for manufacturing a composite electronic component according to the present invention. Since the manufacturing method of the fourth embodiment is the same as the manufacturing method of the first embodiment from step S1 to S5, detailed description thereof is omitted.

  In step S6, the magnetic flux density of the permanent magnet 9 is adjusted to an expected appropriate value with the isolator 1 alone. At this time, the electrical characteristics of the isolator 1 are not measured.

  Next, after heat treatment (aging) is performed in step S7, a large signal characteristic is measured in step S8. The composite electronic component 50 whose measurement result in step S8 has passed a preset standard value is regarded as a product. The composite electronic component 50 that has failed the measurement result in step S8 measures the large signal characteristic so that the measurement value of the large signal characteristic becomes a desired value in step S9, while the permanent magnet 9 of the isolator 1 is measured. Adjust the magnetic flux density.

  The above manufacturing method is an effective method when the product has a large signal characteristic with a sufficient margin with respect to the standard. That is, this method requires only one measurement of the large signal characteristics for the composite electronic component 50 that has passed in step S8, and can also omit the measurement of the electrical characteristics of the isolator 1 alone. Therefore, the manufacturing cost is lower than the manufacturing method of the third embodiment.

[Fifth embodiment, FIG. 15]
In the fifth embodiment, a mobile phone will be described as an example of a communication apparatus according to the present invention.

  FIG. 15 is an electric circuit block diagram of the RF portion of the mobile phone 220. In FIG. 15, 222 is an antenna element, 223 is a duplexer, 231 is a transmission side isolator, 232 is a transmission side power amplifier, 233 is a band pass filter for transmission side stages, 234 is a transmission side mixer, 235 is a reception side power amplifier, 236 is a band-pass filter for receiving side stage, 237 is a mixer on the receiving side, 238 is a voltage controlled oscillator (VCO), and 239 is a band-pass filter for local use.

  Here, as the composite electronic component 240, the composite electronic component 50 manufactured by the manufacturing method of the first to fourth embodiments is used. By mounting this composite electronic component 240, it is possible to realize a small mobile phone 220 with improved electrical characteristics and high reliability.

[Other embodiments]
In addition, this invention is not limited to the said Example, It can change variously within the range of the summary.

  For example, the composite electronic component of the above embodiment has been described for the case where a 3-port circulator type isolator is used. However, as shown in FIG. 16, the composite electronic component 50A using a 2-port gyrator type isolator 1A is used. There may be.

  The isolator 1 </ b> A has two sets of center electrodes 21 and 22. One end of the center electrode 21 is electrically connected to the input end 46, and the other end is electrically connected to the output terminal 47. One end of the center electrode 22 is electrically connected to the input terminal 47, and the other end is electrically connected to the ground. The parallel RC circuit including the matching capacitor C1 and the resistor R1 is electrically connected between the input terminal 46 and the output terminal 47. The matching capacitor C2 is electrically connected between the output terminal 47 and the ground. This two-port isolator 1A has an advantage that a high attenuation can be obtained even outside the use frequency band because the center electrodes 21 and 22 are orthogonal to each other.

  In addition to the isolator, the nonreciprocal circuit device according to the present invention may be a circulator or a nonreciprocal circuit device with a built-in coupler. In the composite electronic component, only the power amplifier unit may be assembled first, and the bias current may be adjusted at that time.

The disassembled perspective view which shows one Example of the composite electronic component (with a low-pass filter) which concerns on this invention. FIG. 2 is an exploded perspective view of the dielectric multilayer substrate shown in FIG. 1. FIG. 2 is an electric circuit diagram of the composite electronic component shown in FIG. 1. The flowchart which shows one Example of the manufacturing method of the composite electronic component which concerns on this invention. The front view which shows one Example of the manufacturing apparatus of the composite electronic component which concerns on this invention. The Smith chart which shows the input impedance of the isolator of the composite electronic component shown in FIG. The Smith chart which shows the load impedance-electric property correlation of the power amplifier of the composite electronic component shown in FIG. The Smith chart which shows the load characteristic of a power amplifier when the magnetic flux density of a permanent magnet is too strong. The Smith chart which shows the load characteristic of a power amplifier when adjusting the magnetic flux density of a permanent magnet to an appropriate value. The Smith chart which shows the input impedance of the isolator of the composite electronic component (no low pass filter) which concerns on this invention. The Smith chart which shows the load characteristic of a power amplifier when the magnetic flux density of a permanent magnet is too strong. The Smith chart which shows the load characteristic of a power amplifier when adjusting the magnetic flux density of a permanent magnet to an appropriate value. The flowchart which shows another Example of the manufacturing method of the composite electronic component which concerns on this invention. The flowchart which shows another Example of the manufacturing method of the composite electronic component which concerns on this invention. The electric circuit block diagram which shows one Example of the communication apparatus which concerns on this invention. The electric circuit diagram which shows the other Example of the composite electronic component which concerns on this invention. The flowchart which shows the manufacturing method of the conventional composite electronic component.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,1A ... Isolator 4 ... Metal lower case 6 ... Dielectric multilayer substrate 8 ... Metal upper case 9 ... Permanent magnet 20 ... Ferrite 21, 22, 23 ... Center electrode 30 ... Power amplifier
DESCRIPTION OF SYMBOLS 50, 50A ... Composite electronic component 100 ... Manufacturing apparatus 101 ... Control electronic computer 102 ... Power amplifier power supply and current voltage measuring device 103 ... Power amplifier large signal high frequency measuring device 106 ... Magnetic field adjustment coil 220 ... Mobile phone 231 ... Isolators 232 ... Power amplifiers 240 ... Composite electronic components

Claims (5)

A power amplifier unit in a nonreciprocal circuit element unit having a permanent magnet, a ferrite to which a DC magnetic field is applied by the permanent magnet, and a plurality of center electrodes arranged to intersect the ferrite in an electrically insulated state Are electrically connected and integrated to form a composite electronic component, and then the input impedance of the nonreciprocal circuit element unit is adjusted by changing the magnetic flux density of the permanent magnet, thereby A method of manufacturing a composite electronic component comprising adjusting at least one of power added efficiency, output wave distortion ratio, and current consumption value to a desired value . By applying a magnetic field in a certain direction to the permanent magnet and magnetizing it until the residual magnetic flux density is saturated, applying a magnetic field in the reverse direction to the permanent magnet to reduce it to a desired residual magnetic flux density, The method of manufacturing a composite electronic component according to claim 1 , wherein the magnetic flux density of the permanent magnet is changed. Composite electronic component characterized by being produced by the process for the preparation of a composite electronic component according to claim 1 or claim 2. A communication apparatus comprising the composite electronic component according to claim 3 . A measuring instrument that measures at least one characteristic of a current consumption value and an output wave distortion factor of a composite electronic component in which a power amplifier unit is electrically connected and integrated with a nonreciprocal circuit element unit, and the characteristic is desired so as to satisfy the values, on the basis of the instrument measurement results, the arithmetic unit for determining an adjustment amount of the input impedance of the non-reciprocal circuit element, according to an instruction from the arithmetic unit, the non-reciprocal circuit element And an adjuster for adjusting the input impedance by changing the magnetic flux density of the permanent magnet of the part.

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