JP3948391B2 - Non-reciprocal circuit device, manufacturing method thereof, and communication device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a non-reciprocal circuit device, a manufacturing method thereof, and a communication device.
[0002]
[Conventional technology and problems]
Conventionally, nonreciprocal circuit elements such as isolators and circulators have a characteristic of transmitting power only in a predetermined specific direction and not transmitting in the reverse direction. Utilizing this characteristic, for example, an isolator with a built-in termination resistor is used in a transmission circuit unit of a mobile communication device such as a car phone or a mobile phone.
[0003]
[Patent Document 1]
JP-A-8-8611
[0004]
As this type of non-reciprocal circuit element (isolator), for example, as disclosed in Patent Document 1 (see FIGS. 8 and 9 attached to the present application), matching capacitors C1, C2, C3, termination resistor R, and inductance L1 are used. , L2 and L3 are incorporated in the multilayer substrate 113, and the respective ground electrodes 116 are formed on the back surface of the multilayer substrate 113. One of the separated ground electrodes 116c is connected to the center electrode of the termination port P3, and the other ground electrode 116b is connected to the center electrodes of the other two ports P1 and P2. In addition, 112 is a ferrite for microwaves, 114 is a permanent magnet, 111 is a lower yoke (case), and 115 is an upper yoke (case).
[0005]
That is, as shown in the equivalent circuit of FIG. 8, the ground electrode of the termination port P3 and the ground electrodes of the other ports P1 and P2 are electrically separated, and both ends of the termination resistor R are open DC. Therefore, the trimming can be easily performed. After the termination resistor R is trimmed, the ground electrodes 116b and 116c are soldered and electrically connected to the inner wall surface of the lower yoke 111 that serves as a common ground terminal of the isolator.
[0006]
By the way, as shown in FIG. 10, the matching capacitance value and the termination resistance value of the non-reciprocal circuit element used in the 800 MHz band are about 20 pF and 50Ω, respectively. Here, as the measurement frequency of the matching capacitance value becomes higher, the measuring machine becomes more expensive and the setting at the time of measurement becomes more severe, so the frequency lower than the frequency at which the nonreciprocal circuit element actually operates in the mass production process. It is common to measure at (for example, 1 MHz).
[0007]
When the matching capacitance value of 20 pF is converted into a reactance value at 1 MHz, it is about 8000Ω, and the ratio between the impedance of the matching capacitance and the termination resistance is 160: 1. Therefore, as shown in FIG. 8, when the matching capacitor C3 and the termination resistor R form a parallel circuit, only a minute current flows through the matching capacitor C3 in comparison with the termination resistor R during measurement. There was a problem that the measurement accuracy of the capacitance value was lowered.
[0008]
In the manufacturing process of the multi-layer substrate, misalignment of the electrode pattern, variation in the thickness of the substrate sheet, and the like occur, resulting in a multi-layer substrate (defective product) in which a predetermined matching capacitance value and termination resistance value are not formed. Therefore, it is necessary to select the multilayer substrate and trim the capacitance value and the resistance value. However, if the measurement accuracy is low, the selection and trimming are impossible or insufficient.
[0009]
Further, Patent Document 1 discloses a non-reciprocal circuit device in which a ground electrode 121 is separately formed on the back surface of a multilayer substrate 123 as shown in FIG. 11 attached to the present application. A matching capacitor is connected to one separated ground electrode 121, and a termination resistor R is connected to the other ground electrode 121.
[0010]
However, in this multilayer substrate 123, after measuring the resistance value of the termination resistor, it is necessary to connect the separated ground electrode 121 with a conductive paste or the like. This connection is an additional process, and is manufactured. There is a problem that the cost increases.
[0011]
Accordingly, an object of the present invention is to provide a non-reciprocal circuit element that can accurately measure the value of the matching capacitance provided on the multilayer substrate, a manufacturing method thereof, and a high-performance and highly reliable communication device. It is to provide.
[0012]
[Means and Actions for Solving the Problems]
In order to achieve the above object, a non-reciprocal circuit device according to a first aspect of the present invention includes a microwave ferrite, a plurality of center electrodes that are insulated from each other on the microwave ferrite, and the microwave ferrite. A permanent magnet for applying a DC magnetic field, a multilayer substrate on which a matching capacitor and a termination resistor are formed, and a case for holding the multilayer substrate, and the ground electrode of the matching capacitor and the ground electrode of the termination resistor are mutually connected It is formed on the back surface of the multilayer substrate in a separated state, and is electrically connected through the case.
[0013]
In the non-reciprocal circuit device according to the first aspect of the present invention, since the ground electrode of the matching capacitor and the ground electrode of the termination resistor are separated from each other at the stage of assembling the multilayer substrate, the matching capacitance value is set to the termination resistance. It is possible to measure with high accuracy without being influenced by. Further, since these ground electrodes are electrically connected through the case when the multilayer substrate is incorporated in the case, no special process is required for the connection.
[0014]
In the non-reciprocal circuit device according to the first aspect of the present invention, the termination resistor may be formed on the surface of the multilayer substrate or may be formed inside the multilayer substrate. If the termination resistor is formed inside the multilayer substrate and the connection electrode for connecting to the center electrode is formed on the surface of the multilayer substrate, the multilayer substrate can be handled independently of the center electrode.
[0015]
A non-reciprocal circuit device according to a second aspect of the present invention includes a microwave ferrite, a plurality of center electrodes that are insulated from each other on the microwave ferrite, and a permanent magnet that applies a DC magnetic field to the microwave ferrite. And a multilayer capacitor formed with a matching capacitor and a termination resistor, and the ground electrode of the matching capacitor and the ground electrode of the termination resistor are formed on the surface of the multilayer substrate in a state of being separated from each other, And it is electrically connected through the said center electrode, It is characterized by the above-mentioned.
[0016]
In the nonreciprocal circuit device according to the second aspect of the present invention, the matching capacitor ground electrode and the termination resistor ground electrode are separated from each other when the multilayer substrate is assembled. It is possible to measure with high accuracy without being influenced by. Further, since these ground electrodes are connected at the same time when the center electrode is electrically connected to the multilayer substrate, no special process is required for the connection.
[0017]
A manufacturing method according to a third aspect of the present invention includes a microwave ferrite, a plurality of center electrodes that are insulated from each other on the microwave ferrite, and a permanent magnet that applies a DC magnetic field to the microwave ferrite; In a manufacturing method of a non-reciprocal circuit device including a multilayer substrate on which a matching capacitor and a termination resistor are formed, and a case for holding the multilayer substrate, the ground electrode of the matching capacitor and the ground electrode of the termination resistor are separated from each other Forming on the back surface of the multilayer substrate in a state where the multi-layer substrate is formed, measuring a value of the matching capacitance and / or a value of the termination resistor, a ground electrode of the matching capacitor, and a ground electrode of the termination resistor. And a step of electrically connecting via the.
[0018]
In the manufacturing method according to the third aspect of the invention, for the same reason as described in the first aspect of the invention, the matching capacitance value can be accurately measured, and the multilayer substrate can be appropriately selected. It becomes possible.
[0019]
A manufacturing method according to a fourth aspect of the present invention includes a microwave ferrite, a plurality of center electrodes that are insulated from each other on the microwave ferrite, and a permanent magnet that applies a DC magnetic field to the microwave ferrite; In a method for manufacturing a non-reciprocal circuit device including a matching capacitor and a multilayer substrate on which a termination resistor is formed, the matching capacitor ground electrode and the termination resistor ground electrode are separated from each other on the surface of the multilayer substrate. A step of forming, a step of measuring the value of the matching capacitance and / or the value of the termination resistor, and electrically connecting the ground electrode of the matching capacitance and the ground electrode of the termination resistor via the center electrode. And a process.
[0020]
In the manufacturing method according to the fourth aspect of the invention, for the same reason as described in the second aspect of the invention, the matching capacitance value can be accurately measured, and the multilayer substrate can be appropriately selected. It becomes possible.
[0021]
In the manufacturing methods according to the third and fourth inventions, after the value of the matching capacitance and / or the termination resistance is measured, the matching capacitance electrode and / or the termination resistor is trimmed based on the measurement value. This is true. Appropriate trimming can be performed based on the matching capacitance value measured with high accuracy.
[0022]
Furthermore, the communication device according to the present invention includes the nonreciprocal circuit element, thereby improving performance and reliability.
[0023]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of a nonreciprocal circuit device, a method for manufacturing the same, and a communication device according to the present invention will be described below with reference to the accompanying drawings.
[0024]
[First embodiment, see FIGS. 1 to 4]
FIG. 1 shows an exploded perspective view of a first embodiment of a nonreciprocal circuit device according to the present invention. The nonreciprocal circuit device 1 is a lumped constant isolator. As shown in FIG. 1, this lumped constant isolator 1 generally includes a metal upper case 4, a metal lower case 8, a permanent magnet 9, a microwave ferrite 20, center electrodes 21, 22, and 23. A center electrode assembly 13 made of the resin, a resin frame 12, and a multilayer substrate 30.
[0025]
The metal upper case 4 has a cap shape, and the metal lower case 8 has a shape for holding the multilayer substrate 30 and the frame body 12. In order to form the magnetic circuit, the cases 4 and 8 are made of a material made of a ferromagnetic material such as soft iron, and Ag or Cu is plated on the surface thereof.
[0026]
In the center electrode assembly 13, three center electrodes 21, 22, and 23 are arranged on the upper surface of a rectangular microwave ferrite 20 so as to intersect with each other at approximately 120 degrees with an insulating layer (not shown) interposed therebetween. is doing. In the first embodiment, the center electrodes 21, 22, and 23 are configured by two lines. Both end portions of the center electrodes 21, 22, 23 wrap around the lower surface of the ferrite 20, and serve as electrode portions for electrical connection with various electrodes formed on the multilayer substrate 30 described below.
[0027]
The center electrodes 21, 22, and 23 may be wound around the ferrite 20 using a copper foil, or may be formed by printing a silver paste on or inside the ferrite 20. However, since the printed electrodes have higher positional accuracy of the center electrodes 21, 22, and 23, the connection with the multilayer substrate 30 is stabilized. In particular, in the case where the connection is made with small connection electrodes P1, P2, P3 (described later) as in the first embodiment, it is more reliable that the center electrodes 21, 22, 23 are formed by printing. Workability is good.
[0028]
As shown in FIG. 2, the multilayer substrate 30 is obtained by stacking six sheets 41 to 46. Center electrode connection electrodes P1, P2, and P3 and ground connection electrodes 31a, 31b, and 31c are provided on the upper surface of the first (uppermost) dielectric sheet 41, and via holes 18 are provided in the respective electrodes. Is provided. On the upper surface of the second-layer dielectric sheet 42, hot-side capacitor electrodes 71a, 72a, 73a, a resistor 75 (termination resistor R), and a ground connection electrode 17 are provided, and via holes 18 are formed at predetermined positions. Is formed.
[0029]
On the upper surface of the third-layer dielectric sheet 43, a ground-side capacitor electrode 74 and a via hole 18 are provided at a predetermined position. On the upper surface of the fourth dielectric sheet 44, hot-side capacitor electrodes 71b, 72b, 73b and via holes 18 are provided at predetermined positions. On the upper surface of the fifth-layer dielectric sheet 45, a ground-side capacitor electrode 74 and a via hole 18 are provided at a predetermined position. The dielectric sheet 45 is provided with an input terminal electrode 14 and an output terminal electrode 15 on the end surface portion thereof.
[0030]
On the lower surface of the sixth-layer dielectric sheet 46, a matching capacitance ground electrode 76 and a termination resistor ground electrode 77 are provided. In addition, the dielectric sheet 46 is provided with the input terminal electrode 14 and the output terminal electrode 15 on the end surface portion thereof.
[0031]
The electrodes P1 to P3, 14, 15, 17, 31a to 31c, 71a to 73a, 71b to 73b, 74, 76, and 77 are formed on the dielectric sheets 41 to 46 by a method such as pattern printing. As the material of each electrode, Ag, Cu, Ag-Pd, etc., which have a low resistivity and can be fired simultaneously with the dielectric sheet, are used. The surfaces of these electrodes are Au plated with Ni plating as a base. Ni plating increases the adhesion strength between the Ag and Au plating of the electrode. Au plating improves solder wettability and has high electrical conductivity, so that the isolator 1 can have low loss.
[0032]
The thickness of each electrode is about 2 to 20 μm. Dielectric sheet is Al ₂ O _Three As the main component and SiO ₂ , SrO, CaO, PbO, Na ₂ O, K ₂ O, MgO, BaO, CeO ₂ , B ₂ O _Three Is a low-temperature sintered dielectric material containing one or more of them as subcomponents. The thickness of the dielectric sheet is about 10 to 200 μm.
[0033]
The resistor 75 is formed on the surface of the dielectric sheet 42 by a method such as pattern printing. As the material of the resistor 75, cermet, carbon, ruthenium or the like is used. The resistor 75 alone constitutes a termination resistor R.
[0034]
The via hole 18 is formed by previously forming a via hole hole in the dielectric sheets 41 to 45 by laser processing, punching process, or the like, and then filling the via hole hole with a conductive paste.
[0035]
Capacitor electrodes 71a, 71b, 72a, 72b, 73a, 73b constitute matching capacitors C1, C2, C3 facing the capacitor electrode 74 with the dielectric sheets 42, 43, 44 interposed therebetween, respectively. These matching capacitors C1, C2, C3 and termination resistor R together with the electrodes P1, P2, P3, 17, 31a, 31b, 31c and the via hole 18 constitute an electric circuit inside the multilayer substrate 30.
[0036]
The above dielectric sheets 41 to 46 are laminated and then fired integrally to form a multilayer substrate 30 as shown in FIG. The input terminal electrode 14 provided at the end of the multilayer substrate 30 is electrically connected to the capacitor electrodes 71a and 71b, and is further electrically connected to the connection electrode P1. The output terminal electrode 15 is electrically connected to the capacitor electrodes 72a and 72b, and is further electrically connected to the connection electrode P2. On the other hand, the connection electrodes 31a and 31c are electrically connected to the ground electrode 76 via the ground-side capacitor electrode 74, respectively. The connection electrode 31 b is electrically connected to the ground electrode 77 through the termination resistor ground electrode 17.
[0037]
Although not shown, the multilayer board 30 is normally formed in a mother board state, and is folded along half-cut grooves formed on the mother board at a predetermined pitch, or the mother board is cut with a dicer or a laser. Thus, the multilayer substrate 30 having a desired size is obtained.
[0038]
The multilayer substrate 30 thus obtained has matching capacitors C1, C2, C3 and a terminating resistor R inside. The capacitance values of the matching capacitors C1, C2, and C3, the resistance value of the termination resistor R, and the trimming thereof are performed before the multilayer substrate 30 and the center electrodes 21, 22, and 23 are connected.
[0039]
In particular, the capacitance value of the matching capacitor C3 is measured by bringing the measurement probe into contact with the connection electrode P3 (hot side) and the connection electrode 31a (ground side) in FIG. The resistance value of the termination resistor R is measured by bringing the measurement probe into contact with the connection electrode P3 (hot side) and the connection electrode 31b (ground side) shown in FIG.
[0040]
Thus, at the stage of assembling the multilayer substrate 30, the ground side of the matching capacitor C 3 is the electrode 76, and the ground side of the termination resistor R is the electrode 77. The value can be accurately measured without being influenced by the terminating resistance R.
[0041]
The multilayer substrate 30 is trimmed (deleted) together with the uppermost dielectric sheet 41 together with the innermost (second layer) capacitor electrodes 71a, 72a, 73a in a single state. For trimming, for example, a cutting machine or a YAG fundamental wave, second harmonic wave, or third harmonic laser is used. If a laser is used, fast and accurate processing can be obtained. The trimming may be efficiently performed on the multilayer substrate 30 in the mother board state.
[0042]
FIG. 4A shows trimming marks formed on the surface of the multilayer substrate 30 (on the sheet 41) as trimming grooves 80 and 81. FIG. FIG. 4B shows the hot-side capacitor electrodes 71a, 72a, 73a and the resistor 75 in a trimmed state.
[0043]
In the first embodiment, the trimming capacitor electrodes 71a, 72a, 73a are provided inside the multilayer substrate 30, so that the capacitor electrode region that can be trimmed is increased, the capacitance adjustment range is expanded, and the multilayer substrate 30 The yield rate can be improved.
[0044]
Furthermore, only the minimum necessary connection electrodes P1, P2, P3, 31a, 31b, and 31c are formed on the surface of the multilayer substrate 30, and the conductive material such as solder does not spread. Therefore, it is possible to prevent a problem that the conductive material flows into the trimming groove 80 (see FIG. 4A) and the divided capacitor electrodes 71a, 72a, 73a are connected again. Since the distance between the connection electrodes P1, P2, P3, 31a, 31b, and 31c can be increased, the size of the center electrode assembly 13 can be increased. Accordingly, since the inductance formed by the center electrodes 21, 22, and 23 is increased, the pass band width of the isolator 1 can be widened, and the electrical characteristics can be improved.
[0045]
Further, since the capacitor electrodes 71a, 72a, 73a located in the outermost layer are used as the trimming capacitor electrodes, the thickness of the dielectric layer to be removed at the time of trimming can be minimized. Furthermore, since the number of electrodes that obstruct trimming is reduced (in the case of the first embodiment, only the connection electrodes P1, P2, P3, 31a, 31b, and 31c), the capacitor electrode area that can be trimmed is widened, and the capacitance is increased. The adjustment range can be widened.
[0046]
Furthermore, since the trimming capacitor electrodes 71a, 72a and 73a are rectangular, the electrode width is constant, so that a substantially proportional relationship is established between the position of the trimming groove 80 and the obtained capacitance value. , Capacitance adjustment work becomes easy.
[0047]
Further, the trimming capacitor electrodes 71a, 72a, 73a overlap only the center electrode connection electrodes P1, P2, P3 in the stacking direction of the dielectric sheets 41-46. Thus, other electrodes that hinder trimming can be prevented from overlapping with the trimming capacitor electrodes 71a, 72a, 73a. That is, if the trimming capacitor electrodes 71a, 72a, 73a overlap with the ground connection electrodes 31a, 31b, 31c, a capacitance is formed at that portion, so that there is a problem that the trimming accuracy is deteriorated. However, in this embodiment, there is no such overlap, and the trimming accuracy does not deteriorate.
[0048]
Further, in FIG. 2, the multilayer substrate 30 is provided with hot-side capacitor electrodes 73a and 73b of the matching capacitor C3 on one side, and hot-side capacitor electrodes 71a and 71b of the matching capacitor C1 on the other side. The hot side capacitor electrodes 72a and 72b of the matching capacitor C2 are provided on the lower side of the other side. In other words, the hot-side capacitor electrodes 73a and 73b of the termination resistor-side matching capacitor C3 are disposed on the side where the termination resistor R is disposed, and the hot-side capacitor electrodes 71a and 71b of the input-side matching capacitor C1 are input. The hot side capacitor electrodes 72a and 72b of the output side matching capacitor C2 are arranged on the output side. Thereby, trimming adjustment is easy, and matching capacitors C1, C2, and C3 that effectively use the area of the multilayer substrate 30 can be obtained.
[0049]
In general, an isolator used in a mobile communication device often has a larger capacitance of the resistance matching capacitor C3 than the capacitance of the input / output matching capacitors C1 and C2. Therefore, in order to ensure the capacitance of the resistance-side matching capacitor C3, the area of the hot-side capacitor electrodes 73a and 73b of the matching capacitor C3 is the total area of the hot-side capacitor electrodes of the matching capacitors C1, C2, and C3. It is preferable to set it to be 1/3 or more of.
[0050]
The multilayer substrate 30 also includes a termination resistor R, and the resistance value of the termination resistor R is adjusted by trimming together with the uppermost dielectric sheet 41 in the same manner as the matching capacitors C1, C2, and C3. be able to. Since the resistance value increases when the width of the resistor 75 becomes narrow even at one place, the resistor 75 is cut halfway in the width direction. Since the termination resistor R is built in the multilayer substrate 30, there is no fear that Ni plating or the like is applied to the surface of the resistor 75 when Ni plating or Au plating is applied to the surfaces of the electrodes P1, P2, P3, etc. The resistance value of the termination resistor R does not decrease. As shown in FIG. 4, in the first embodiment, three trimming grooves 80 for dividing the trimming capacitor electrodes 71a, 72a, and 73a and one trimming groove 81 for cutting the resistor 75 are provided. It is formed on the multilayer substrate 30.
[0051]
The above components are assembled as follows. That is, as shown in FIG. 1, the center electrode assembly 13 is assembled on the multilayer substrate 30 while being positioned by the frame body 12. At this time, one end of each of the center electrodes 21, 22, and 23 of the center electrode assembly 13 (one electrode portion that wraps around the lower surface of the ferrite 20) is formed on the surface of the multilayer substrate 30. , P2 and P3, and the other end of each of the center electrodes 21, 22, and 23 (the other electrode portion that wraps around the lower surface of the ferrite 20) is soldered to the ground connection electrodes 31a, 31b, and 31c. Is done.
[0052]
A permanent magnet 9 is placed on the center electrode assembly 13, and these components are sandwiched and held between the lower case 8 and the upper case 4. The cases 4 and 8 are joined together by solder or the like to form a metal case and also function as a yoke. That is, the metal cases 4 and 8 form a magnetic path that surrounds the permanent magnet 9, the center electrode assembly 13, and the multilayer substrate 30.
[0053]
The multilayer substrate 30 is placed on the bottom of the metal lower case 8, and ground electrodes 76 and 77 provided on the lower surface of the dielectric sheet 46 are electrically connected via the case 8 with solder. The input terminal electrode 14 and the output terminal electrode 15 are electrically connected to an input terminal portion 57 and an output terminal portion 58 provided on the lower surface of the multilayer substrate 30, respectively. The terminal portions 57 and 58 face the notches 8a and 8b of the lower case 8, and are exposed downward without contacting the case 8.
[0054]
FIG. 3 is an electrical equivalent circuit diagram of the isolator 1. The ground electrode 77 of the termination resistor R is electrically separated from the ground electrode 76 of the matching capacitor at the single stage of the multilayer substrate 30, but is grounded by being soldered to the metal lower case 8. 76 will be dropped to the ground. In this state, the matching capacitor C3 and the terminating resistor R are connected in parallel between the center electrode connection electrode P3 and the ground electrodes 76 and 77.
[0055]
[Refer to the second embodiment, FIGS. 5 and 6]
The second embodiment is an isolator having basically the same configuration and function as the isolator 1 shown as the first embodiment. As shown in FIG. 5, the shapes of the connection electrode 31b (31bA, 31bB) provided on the uppermost dielectric sheet 41 and the ground electrode 76 provided on the lowermost dielectric sheet 46 are different. And its connection status. The other configuration is the same as that of the first embodiment, and the same parts and portions are denoted by the same reference numerals, and redundant description is omitted.
[0056]
Specifically, the connection electrode 31b formed on the uppermost dielectric sheet 41 is electrically separated into a matching connection ground connection electrode 31bA and a termination connection R ground connection electrode 31bB. On the other hand, only the ground electrode 76 is formed on the lower surface of the lowermost dielectric sheet 46.
[0057]
In the multilayer substrate 30 having the electrode configuration as described above, the matching connection ground connection electrode 31bA and the termination connection R ground connection electrode 31bB are separated from each other in a single substrate state. The capacitance value can be accurately measured without being affected by the termination resistance R, and it is possible to appropriately select and trim the non-defective product / defective product.
[0058]
The connection electrodes 31bA and 31bB are electrically connected by the other end electrode portion of the center electrode 22 when the center electrode assembly 13 is assembled. 6A shows the electrode configuration on the surface of the multilayer substrate 30, and FIG. 6B shows the electrode configuration that wraps around the lower surface of the center electrode assembly 13. A state in which these electrodes are connected is shown in FIG. 6C. Here, the center electrode assembly 13 and its electrode portions are indicated by broken lines.
[0059]
That is, as shown in FIG. 6C, one end electrode portion 21a of the center electrode 21 is connected to the electrode P1, and the other end electrode portion 21b is connected to the electrode 31a. One end electrode portion 22a of the center electrode 22 is connected to the electrode P2, and the other end electrode portion 22b is connected to the electrodes 31bA and 31bB. Further, one end electrode portion 23a of the center electrode 23 is connected to the electrode P3, and the other end electrode portion 23b is connected to the electrode 31c.
[0060]
[Third Embodiment, FIG. 7]
In the third embodiment, a mobile phone will be described as an example of a communication device according to the present invention. FIG. 7 shows an electric circuit of the RF portion of the cellular phone 220, 222 is an antenna element, 223 is a duplexer, 231 is a transmission side isolator, 232 is a transmission side amplifier, 233 is a band pass filter for transmission side stages, and 234 is a transmission A side mixer, 235 is a reception side amplifier, 236 is a reception side interstage band pass filter, 237 is a reception side mixer, 238 is a voltage controlled oscillator (VCO), and 239 is a local band pass filter.
[0061]
Here, the lumped constant isolator 1 of the first or second embodiment can be used as the transmission-side isolator 231. By mounting these isolators, a mobile phone with improved electrical characteristics and high reliability can be realized.
[0062]
[Other Embodiments]
In addition, this invention is not limited to the said embodiment, It can change variously within the range of the summary.
[0063]
For example, the capacitor of the above embodiment is composed of a plurality of hot-side capacitor electrodes and a plurality of ground electrodes, but may be composed of one hot-side capacitor electrode and one ground electrode.
[0064]
Furthermore, the capacitor formed inside the multilayer substrate is not limited to the matching capacitor, and may be a capacitor for forming a low-pass filter, a trap circuit, or the like. The resistor 75 (termination resistor R) may be formed on the surface of the multilayer substrate 30.
[0065]
【The invention's effect】
As is apparent from the above description, according to the first and third inventions, the matching capacitance value is terminated because the ground electrodes of the matching capacitance and termination resistance are formed on the back surface of the multilayer substrate in a state of being separated from each other. Measurement can be performed accurately without being affected by the resistance, and selection of the multilayer substrate and trimming of the capacity can be appropriately performed. In addition, since these ground electrodes are electrically connected through the case when the multilayer substrate is incorporated in the case, no special process is required for the connection.
[0066]
According to the second and fourth inventions, since the ground electrodes of the matching capacitor and the termination resistor are formed on the surface of the multilayer substrate in a state of being separated from each other, the matching capacitance value is accurately affected without being influenced by the termination resistor. Measurement can be performed, and the selection of the multilayer substrate and the trimming of the capacity can be appropriately performed. In addition, since these ground electrodes are connected at the same time when the central electrode is electrically connected to the multilayer substrate, no special process is required for the connection.
[Brief description of the drawings]
FIG. 1 is an exploded perspective view showing a first embodiment of a non-reciprocal circuit device according to the present invention.
FIG. 2 is a plan view showing the multilayer substrate shown in FIG. 1 for each layer.
FIG. 3 is an electrical equivalent circuit diagram of the non-reciprocal circuit device.
4A is a plan view showing a state in which laser trimming is performed on the multilayer substrate, and FIG. 4B is a plan view showing a trimmed capacitor electrode and a resistor.
FIG. 5 is a plan view showing a multilayer substrate for each layer in a second embodiment of a non-reciprocal circuit device according to the present invention.
6A is a plan view showing an electrode formed on the surface of the multilayer substrate, FIG. 6B is a plan view showing an electrode portion of the center electrode assembly, and FIG. 6C is a center electrode assembly on the multilayer substrate. The top view which shows the state which mounts.
FIG. 7 is an electric circuit block diagram of a communication apparatus according to the present invention.
FIG. 8 is an electrical equivalent circuit diagram of the nonreciprocal circuit device described in Patent Document 1.
FIG. 9 is an exploded perspective view of the non-reciprocal circuit device described in Patent Document 1.
FIG. 10 is a circuit diagram showing a measurement state of a matching capacitance value in the non-reciprocal circuit element.
11 is a perspective view showing the back surface of a multilayer substrate of another nonreciprocal circuit device described in Patent Document 1. FIG.
[Explanation of symbols]
1 ... Non-reciprocal circuit element (lumped constant type isolator)
4,8 ... Metal case
9 ... Permanent magnet
13 ... Center electrode assembly
20 Ferrite
21-23 ... Center electrode
30 ... Multilayer substrate
31a, 31b (31bA, 31bB), 31c: Ground connection electrodes
71a to 73a, 71b to 73b... Hot side capacitor electrode
74: Ground side capacitor electrode
75 ... resistor
76, 77 ... Ground electrode
80, 81 ... Trimming groove
220 ... Mobile phone
C1 to C3 ... Matching capacitors
R: Termination resistance
P1 to P3 .. center electrode connection electrode

Claims (7)

Microwave ferrite,
A plurality of central electrodes insulated from and intersecting each other on the microwave ferrite;
A permanent magnet for applying a DC magnetic field to the microwave ferrite;
A multilayer substrate on which matching capacitors and termination resistors are formed;
A case for holding the multilayer substrate,
A ground electrode of the matching capacitor and a ground electrode of the termination resistor are formed on the back surface of the multilayer substrate in a state of being separated from each other, and are electrically connected via the case;
A nonreciprocal circuit device characterized by the above. The termination resistor is formed inside the multilayer substrate,
A connection electrode for connecting to the center electrode is formed on the surface of the multilayer substrate;
The nonreciprocal circuit device according to claim 1. Microwave ferrite,
A plurality of central electrodes insulated from and intersecting each other on the microwave ferrite;
A permanent magnet for applying a DC magnetic field to the microwave ferrite;
A multilayer substrate on which matching capacitors and termination resistors are formed,
A ground electrode of the matching capacitor and a ground electrode of the termination resistor are formed on the surface of the multilayer substrate in a state of being separated from each other, and are electrically connected via the center electrode;
A nonreciprocal circuit device characterized by the above. Microwave ferrite, a plurality of center electrodes that are insulated from each other on the microwave ferrite, a permanent magnet that applies a DC magnetic field to the microwave ferrite, and a multilayer in which a matching capacitor and a termination resistor are formed In a method of manufacturing a non-reciprocal circuit device comprising a substrate and a case for holding the multilayer substrate,
Forming the ground electrode of the matching capacitor and the ground electrode of the termination resistor on the back surface of the multilayer substrate in a state of being separated from each other;
Measuring the value of the matching capacitance and / or the value of the termination resistor;
Electrically connecting the ground electrode of the matching capacitor and the ground electrode of the termination resistor through the case;
A method for manufacturing a non-reciprocal circuit device, comprising: Microwave ferrite, a plurality of center electrodes that are insulated from each other on the microwave ferrite, a permanent magnet that applies a DC magnetic field to the microwave ferrite, and a multilayer in which a matching capacitor and a termination resistor are formed In a method for manufacturing a non-reciprocal circuit device comprising a substrate,
Forming the ground electrode of the matching capacitor and the ground electrode of the termination resistor on the surface of the multilayer substrate in a state of being separated from each other;
Measuring the value of the matching capacitance and / or the value of the termination resistor;
Electrically connecting the ground electrode of the matching capacitor and the ground electrode of the termination resistor via the center electrode;
A method for manufacturing a non-reciprocal circuit device, comprising: 6. The matching capacitance electrode and / or the termination resistor are trimmed based on the measured value after measuring the matching capacitance value and / or the termination resistance value. Manufacturing method of a non-reciprocal circuit device. A communication apparatus comprising the nonreciprocal circuit device according to claim 1, 2 or 3.

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