JP4176366B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP4176366B2 JP4176366B2 JP2002086968A JP2002086968A JP4176366B2 JP 4176366 B2 JP4176366 B2 JP 4176366B2 JP 2002086968 A JP2002086968 A JP 2002086968A JP 2002086968 A JP2002086968 A JP 2002086968A JP 4176366 B2 JP4176366 B2 JP 4176366B2
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- silicon film
- film
- rare gas
- gas element
- crystal structure
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- 235000018734 Sambucus australis Nutrition 0.000 description 1
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- AHLBNYSZXLDEJQ-FWEHEUNISA-N orlistat Chemical compound CCCCCCCCCCC[C@H](OC(=O)[C@H](CC(C)C)NC=O)C[C@@H]1OC(=O)[C@H]1CCCCCC AHLBNYSZXLDEJQ-FWEHEUNISA-N 0.000 description 1
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- 239000010980 sapphire Substances 0.000 description 1
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- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
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- 229910052715 tantalum Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical class [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
Images
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- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002086968A JP4176366B2 (ja) | 2001-03-26 | 2002-03-26 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-88613 | 2001-03-26 | ||
| JP2001088613 | 2001-03-26 | ||
| JP2002086968A JP4176366B2 (ja) | 2001-03-26 | 2002-03-26 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002359196A JP2002359196A (ja) | 2002-12-13 |
| JP2002359196A5 JP2002359196A5 (enrdf_load_stackoverflow) | 2005-07-21 |
| JP4176366B2 true JP4176366B2 (ja) | 2008-11-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002086968A Expired - Fee Related JP4176366B2 (ja) | 2001-03-26 | 2002-03-26 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4176366B2 (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI291310B (en) * | 2005-12-01 | 2007-12-11 | Au Optronics Corp | Organic light emitting diode (OLED) display panel and method of forming polysilicon channel layer thereof |
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2002
- 2002-03-26 JP JP2002086968A patent/JP4176366B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002359196A (ja) | 2002-12-13 |
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