JP4167209B2 - レーザ装置 - Google Patents

レーザ装置 Download PDF

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Publication number
JP4167209B2
JP4167209B2 JP2004235527A JP2004235527A JP4167209B2 JP 4167209 B2 JP4167209 B2 JP 4167209B2 JP 2004235527 A JP2004235527 A JP 2004235527A JP 2004235527 A JP2004235527 A JP 2004235527A JP 4167209 B2 JP4167209 B2 JP 4167209B2
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JP
Japan
Prior art keywords
refrigerant
laser
light output
light
flow path
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004235527A
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English (en)
Japanese (ja)
Other versions
JP2006054345A (ja
JP2006054345A5 (enExample
Inventor
博文 宮島
博文 菅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to JP2004235527A priority Critical patent/JP4167209B2/ja
Priority to US11/628,414 priority patent/US7599414B2/en
Priority to DE112005001445T priority patent/DE112005001445T5/de
Priority to PCT/JP2005/012682 priority patent/WO2006016459A1/ja
Publication of JP2006054345A publication Critical patent/JP2006054345A/ja
Publication of JP2006054345A5 publication Critical patent/JP2006054345A5/ja
Application granted granted Critical
Publication of JP4167209B2 publication Critical patent/JP4167209B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F3/00—Plate-like or laminated elements; Assemblies of plate-like or laminated elements
    • F28F3/12—Elements constructed in the shape of a hollow panel, e.g. with channels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/02365—Fixing laser chips on mounts by clamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/40—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids
    • H10W40/47—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids by flowing liquids, e.g. forced water cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/40—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids
    • H10W40/47—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids by flowing liquids, e.g. forced water cooling
    • H10W40/475—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids by flowing liquids, e.g. forced water cooling using jet impingement

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2004235527A 2004-08-12 2004-08-12 レーザ装置 Expired - Fee Related JP4167209B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004235527A JP4167209B2 (ja) 2004-08-12 2004-08-12 レーザ装置
US11/628,414 US7599414B2 (en) 2004-08-12 2005-07-08 Laser device
DE112005001445T DE112005001445T5 (de) 2004-08-12 2005-07-08 Laservorrichtung
PCT/JP2005/012682 WO2006016459A1 (ja) 2004-08-12 2005-07-08 レーザ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004235527A JP4167209B2 (ja) 2004-08-12 2004-08-12 レーザ装置

Publications (3)

Publication Number Publication Date
JP2006054345A JP2006054345A (ja) 2006-02-23
JP2006054345A5 JP2006054345A5 (enExample) 2007-04-12
JP4167209B2 true JP4167209B2 (ja) 2008-10-15

Family

ID=35839235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004235527A Expired - Fee Related JP4167209B2 (ja) 2004-08-12 2004-08-12 レーザ装置

Country Status (4)

Country Link
US (1) US7599414B2 (enExample)
JP (1) JP4167209B2 (enExample)
DE (1) DE112005001445T5 (enExample)
WO (1) WO2006016459A1 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009040834B4 (de) * 2009-09-09 2013-10-31 Jenoptik Laser Gmbh Vorrichtung zum Schutz eines kantenemittierenden Laserdiodenelementes
JP2012248812A (ja) * 2011-05-31 2012-12-13 Sumitomo Electric Ind Ltd 半導体光集積素子の製造方法
JP2014127543A (ja) * 2012-12-26 2014-07-07 Sony Corp 冷却装置および半導体レーザ装置
JP5764152B2 (ja) * 2013-02-13 2015-08-12 株式会社フジクラ 半導体レーザ装置
US9762018B2 (en) * 2014-12-09 2017-09-12 Raytheon Company System and method for cooling a laser gain medium using an ultra-thin liquid thermal optical interface
US10211590B2 (en) 2015-11-25 2019-02-19 Raytheon Company Dual-function optical bench and cooling manifold for high-power laser system
US10297968B2 (en) 2015-11-25 2019-05-21 Raytheon Company High-gain single planar waveguide (PWG) amplifier laser system
US9865988B2 (en) 2015-11-25 2018-01-09 Raytheon Company High-power planar waveguide (PWG) pumphead with modular components for high-power laser system
US10056731B2 (en) 2015-11-25 2018-08-21 Raytheon Company Planar waveguide (PWG) amplifier-based laser system with adaptive optic wavefront correction in low-power beam path
US11114813B2 (en) 2015-11-25 2021-09-07 Raytheon Company Integrated pumplight homogenizer and signal injector for high-power laser system
US10069270B2 (en) 2016-02-11 2018-09-04 Raytheon Company Planar waveguides with enhanced support and/or cooling features for high-power laser systems
US10109978B2 (en) 2016-04-26 2018-10-23 Nlight, Inc. Low size and weight, high power fiber laser pump
JP6798137B2 (ja) * 2016-04-28 2020-12-09 岩崎電気株式会社 光源ユニット
US10411435B2 (en) 2016-06-06 2019-09-10 Raytheon Company Dual-axis adaptive optic (AO) system for high-power lasers
US11095091B2 (en) * 2016-06-20 2021-08-17 TeraDiode, Inc. Packages for high-power laser devices
CN110809841B (zh) * 2017-07-07 2021-04-16 松下知识产权经营株式会社 半导体激光装置
CN109426049B (zh) * 2017-08-21 2021-03-05 深圳光峰科技股份有限公司 液冷循环散热装置、液冷循环散热系统及光学投影系统
US10511135B2 (en) 2017-12-19 2019-12-17 Raytheon Company Laser system with mechanically-robust monolithic fused planar waveguide (PWG) structure
JP6765395B2 (ja) 2018-06-14 2020-10-07 株式会社フジクラ 光モジュールユニット及びレーザ装置
DE102018210139B4 (de) * 2018-06-21 2021-02-18 Trumpf Photonics, Inc. Diodenlaseranordnung und DWM-Modul mit einer solchen Diodenlaseranordnung
DE102018210135B4 (de) * 2018-06-21 2023-06-29 Trumpf Photonics, Inc. Diodenlaseranordnung und Verfahren zur Montage einer Diodenlaseranordnung
US11133639B2 (en) 2018-07-24 2021-09-28 Raytheon Company Fast axis thermal lens compensation for a planar amplifier structure
JP7525347B2 (ja) * 2020-09-23 2024-07-30 浜松ホトニクス株式会社 レーザ照射ヘッド及びレーザ照射装置
CN112366512A (zh) * 2020-09-28 2021-02-12 北京凯普林光电科技股份有限公司 一种半导体激光器散热结构
JP2022074322A (ja) * 2020-11-04 2022-05-18 浜松ホトニクス株式会社 半導体レーザ装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08116138A (ja) * 1994-10-17 1996-05-07 Mitsubishi Heavy Ind Ltd 半導体レーザ素子の冷却装置
JP3816194B2 (ja) 1996-11-22 2006-08-30 ファナック株式会社 冷却装置、光源装置、面発光装置、およびその製造方法
JP2001111176A (ja) * 1999-10-07 2001-04-20 Hamamatsu Photonics Kk 半導体レーザ装置
JP4068887B2 (ja) * 2002-04-26 2008-03-26 浜松ホトニクス株式会社 半導体レーザ装置及びその冷却方法

Also Published As

Publication number Publication date
DE112005001445T5 (de) 2007-06-28
WO2006016459A1 (ja) 2006-02-16
JP2006054345A (ja) 2006-02-23
US20080095204A1 (en) 2008-04-24
US7599414B2 (en) 2009-10-06

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