JP4165070B2 - 半導体メモリ装置、動きベクトル検出装置および動き補償予測符号化装置 - Google Patents

半導体メモリ装置、動きベクトル検出装置および動き補償予測符号化装置 Download PDF

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Publication number
JP4165070B2
JP4165070B2 JP2002004955A JP2002004955A JP4165070B2 JP 4165070 B2 JP4165070 B2 JP 4165070B2 JP 2002004955 A JP2002004955 A JP 2002004955A JP 2002004955 A JP2002004955 A JP 2002004955A JP 4165070 B2 JP4165070 B2 JP 4165070B2
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Prior art keywords
memory
data
calculation
divided
lines
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Expired - Fee Related
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JP2002004955A
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Japanese (ja)
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JP2003208789A (ja
JP2003208789A5 (enrdf_load_stackoverflow
Inventor
哲二郎 近藤
勉 市川
泰史 野出
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Sony Corp
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Sony Corp
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Priority to JP2002004955A priority Critical patent/JP4165070B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Priority to CN2007101619663A priority patent/CN101127237B/zh
Priority to US10/474,840 priority patent/US7573939B2/en
Priority to CN038002795A priority patent/CN1509475B/zh
Priority to PCT/JP2003/000166 priority patent/WO2003060921A1/ja
Priority to KR1020037013155A priority patent/KR100927760B1/ko
Priority to CN2007101619517A priority patent/CN101127236B/zh
Publication of JP2003208789A publication Critical patent/JP2003208789A/ja
Publication of JP2003208789A5 publication Critical patent/JP2003208789A5/ja
Application granted granted Critical
Publication of JP4165070B2 publication Critical patent/JP4165070B2/ja
Priority to US12/341,371 priority patent/US20090154566A1/en
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  • Compression Or Coding Systems Of Tv Signals (AREA)
  • Static Random-Access Memory (AREA)
  • Compression, Expansion, Code Conversion, And Decoders (AREA)
  • Dram (AREA)
JP2002004955A 2002-01-11 2002-01-11 半導体メモリ装置、動きベクトル検出装置および動き補償予測符号化装置 Expired - Fee Related JP4165070B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2002004955A JP4165070B2 (ja) 2002-01-11 2002-01-11 半導体メモリ装置、動きベクトル検出装置および動き補償予測符号化装置
US10/474,840 US7573939B2 (en) 2002-01-11 2003-01-10 Memory cell circuit, memory device, motion vector detection device, and motion compensation prediction coding device
CN038002795A CN1509475B (zh) 2002-01-11 2003-01-10 存储设备、运动矢量检测器、和运动补偿预测编码器
PCT/JP2003/000166 WO2003060921A1 (fr) 2002-01-11 2003-01-10 Circuit a cellule de memoire, memoire, detecteur de vecteur de mouvement et codeur de prediction de compensation de mouvement
CN2007101619663A CN101127237B (zh) 2002-01-11 2003-01-10 存储设备和运动矢量检测器
KR1020037013155A KR100927760B1 (ko) 2002-01-11 2003-01-10 메모리 셀 회로, 메모리 장치, 움직임 벡터 검출 장치 및움직임 보상 예측 부호화 장치
CN2007101619517A CN101127236B (zh) 2002-01-11 2003-01-10 存储单元电路
US12/341,371 US20090154566A1 (en) 2002-01-11 2008-12-22 Memory cell circuit, memory device, motion vector detector, and motion compensation predictive encoder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002004955A JP4165070B2 (ja) 2002-01-11 2002-01-11 半導体メモリ装置、動きベクトル検出装置および動き補償予測符号化装置

Publications (3)

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JP2003208789A JP2003208789A (ja) 2003-07-25
JP2003208789A5 JP2003208789A5 (enrdf_load_stackoverflow) 2005-03-10
JP4165070B2 true JP4165070B2 (ja) 2008-10-15

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JP2002004955A Expired - Fee Related JP4165070B2 (ja) 2002-01-11 2002-01-11 半導体メモリ装置、動きベクトル検出装置および動き補償予測符号化装置

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JP (1) JP4165070B2 (enrdf_load_stackoverflow)
CN (2) CN101127236B (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4537680B2 (ja) 2003-08-04 2010-09-01 株式会社東芝 不揮発性半導体記憶装置及びその動作方法、製造方法、半導体集積回路及びシステム
JP5141633B2 (ja) * 2009-04-24 2013-02-13 ソニー株式会社 画像処理方法及びそれを用いた画像情報符号化装置
DE102016214879A1 (de) * 2016-08-10 2018-02-15 Robert Bosch Gmbh Verfahren und Vorrichtung zum Betreiben eines Speichers
CN108766490A (zh) * 2018-05-31 2018-11-06 夏月石 一种动态存储的单元电路及设计方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01294295A (ja) * 1988-05-20 1989-11-28 Fujitsu Ltd パーシャル・ランダム・アクセス・メモリ
JP3226426B2 (ja) * 1994-09-27 2001-11-05 松下電器産業株式会社 半導体メモリ及びその使用方法並びに画像プロセッサ
CN1202530C (zh) * 1998-04-01 2005-05-18 三菱电机株式会社 在低电源电压下高速动作的静态型半导体存储装置
US6147895A (en) * 1999-06-04 2000-11-14 Celis Semiconductor Corporation Ferroelectric memory with two ferroelectric capacitors in memory cell and method of operating same

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Publication number Publication date
CN101127237A (zh) 2008-02-20
JP2003208789A (ja) 2003-07-25
CN101127236A (zh) 2008-02-20
CN101127236B (zh) 2012-02-01
CN101127237B (zh) 2010-11-03

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