CN101127236B - 存储单元电路 - Google Patents

存储单元电路 Download PDF

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Publication number
CN101127236B
CN101127236B CN2007101619517A CN200710161951A CN101127236B CN 101127236 B CN101127236 B CN 101127236B CN 2007101619517 A CN2007101619517 A CN 2007101619517A CN 200710161951 A CN200710161951 A CN 200710161951A CN 101127236 B CN101127236 B CN 101127236B
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data
storage unit
storage
unit
block
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Chinese (zh)
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CN101127236A (zh
Inventor
近藤哲二郎
市川勉
野出泰史
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Sony Corp
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Sony Corp
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  • Compression Or Coding Systems Of Tv Signals (AREA)
  • Compression, Expansion, Code Conversion, And Decoders (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
CN2007101619517A 2002-01-11 2003-01-10 存储单元电路 Expired - Fee Related CN101127236B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2002004955A JP4165070B2 (ja) 2002-01-11 2002-01-11 半導体メモリ装置、動きベクトル検出装置および動き補償予測符号化装置
JP4955/02 2002-01-11
JP2002052022A JP4273695B2 (ja) 2002-02-27 2002-02-27 動きベクトル検出装置
JP52022/02 2002-02-27

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN038002795A Division CN1509475B (zh) 2002-01-11 2003-01-10 存储设备、运动矢量检测器、和运动补偿预测编码器

Publications (2)

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CN101127236A CN101127236A (zh) 2008-02-20
CN101127236B true CN101127236B (zh) 2012-02-01

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CN2007101619517A Expired - Fee Related CN101127236B (zh) 2002-01-11 2003-01-10 存储单元电路
CN2007101619663A Expired - Fee Related CN101127237B (zh) 2002-01-11 2003-01-10 存储设备和运动矢量检测器

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CN2007101619663A Expired - Fee Related CN101127237B (zh) 2002-01-11 2003-01-10 存储设备和运动矢量检测器

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JP (1) JP4165070B2 (enrdf_load_stackoverflow)
CN (2) CN101127236B (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4537680B2 (ja) 2003-08-04 2010-09-01 株式会社東芝 不揮発性半導体記憶装置及びその動作方法、製造方法、半導体集積回路及びシステム
JP5141633B2 (ja) * 2009-04-24 2013-02-13 ソニー株式会社 画像処理方法及びそれを用いた画像情報符号化装置
DE102016214879A1 (de) * 2016-08-10 2018-02-15 Robert Bosch Gmbh Verfahren und Vorrichtung zum Betreiben eines Speichers
CN108766490A (zh) * 2018-05-31 2018-11-06 夏月石 一种动态存储的单元电路及设计方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1230750A (zh) * 1998-04-01 1999-10-06 三菱电机株式会社 在低电源电压下高速动作的静态型半导体存储装置
US6147895A (en) * 1999-06-04 2000-11-14 Celis Semiconductor Corporation Ferroelectric memory with two ferroelectric capacitors in memory cell and method of operating same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01294295A (ja) * 1988-05-20 1989-11-28 Fujitsu Ltd パーシャル・ランダム・アクセス・メモリ
JP3226426B2 (ja) * 1994-09-27 2001-11-05 松下電器産業株式会社 半導体メモリ及びその使用方法並びに画像プロセッサ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1230750A (zh) * 1998-04-01 1999-10-06 三菱电机株式会社 在低电源电压下高速动作的静态型半导体存储装置
US6147895A (en) * 1999-06-04 2000-11-14 Celis Semiconductor Corporation Ferroelectric memory with two ferroelectric capacitors in memory cell and method of operating same

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
JP平1-267600A 1989.10.25
JP特开平5-152542A 1993.06.18
JP特开平5-206398A 1993.08.13
JP特开平6-95937A 1994.04.08

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Publication number Publication date
CN101127237A (zh) 2008-02-20
JP4165070B2 (ja) 2008-10-15
JP2003208789A (ja) 2003-07-25
CN101127236A (zh) 2008-02-20
CN101127237B (zh) 2010-11-03

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