JP4163752B2 - 複合物を研磨するための組成物及び方法 - Google Patents

複合物を研磨するための組成物及び方法 Download PDF

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Publication number
JP4163752B2
JP4163752B2 JP51599698A JP51599698A JP4163752B2 JP 4163752 B2 JP4163752 B2 JP 4163752B2 JP 51599698 A JP51599698 A JP 51599698A JP 51599698 A JP51599698 A JP 51599698A JP 4163752 B2 JP4163752 B2 JP 4163752B2
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silica
silicon nitride
composition
polishing
group
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JP51599698A
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Japanese (ja)
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JP2001501369A5 (enExample
JP2001501369A (ja
Inventor
シャラス ディー． ホサリ
アナンサ アール． セズラマン
ジウン―ファン ワン
リー メルボルン クック
Original Assignee
ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP51599698A 1996-09-27 1997-09-26 複合物を研磨するための組成物及び方法 Expired - Lifetime JP4163752B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US2727796P 1996-09-27 1996-09-27
US08/802,829 1997-02-19
US08/802,829 US5738800A (en) 1996-09-27 1997-02-19 Composition and method for polishing a composite of silica and silicon nitride
US60/027,277 1997-02-19
PCT/US1997/017503 WO1998013218A1 (en) 1996-09-27 1997-09-26 Composition and method for polishing a composite

Publications (3)

Publication Number Publication Date
JP2001501369A JP2001501369A (ja) 2001-01-30
JP2001501369A5 JP2001501369A5 (enExample) 2005-05-12
JP4163752B2 true JP4163752B2 (ja) 2008-10-08

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP51599698A Expired - Lifetime JP4163752B2 (ja) 1996-09-27 1997-09-26 複合物を研磨するための組成物及び方法

Country Status (5)

Country Link
US (2) US5738800A (enExample)
EP (1) EP0930978B1 (enExample)
JP (1) JP4163752B2 (enExample)
DE (1) DE69724632T2 (enExample)
WO (1) WO1998013218A1 (enExample)

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Also Published As

Publication number Publication date
DE69724632T2 (de) 2004-06-03
WO1998013218A1 (en) 1998-04-02
EP0930978A4 (en) 2001-05-02
DE69724632D1 (de) 2003-10-09
US5738800A (en) 1998-04-14
EP0930978A1 (en) 1999-07-28
EP0930978B1 (en) 2003-09-03
JP2001501369A (ja) 2001-01-30
US6042741A (en) 2000-03-28

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