JP4153898B2 - 高周波電力増幅器モジュール - Google Patents

高周波電力増幅器モジュール Download PDF

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Publication number
JP4153898B2
JP4153898B2 JP2004150427A JP2004150427A JP4153898B2 JP 4153898 B2 JP4153898 B2 JP 4153898B2 JP 2004150427 A JP2004150427 A JP 2004150427A JP 2004150427 A JP2004150427 A JP 2004150427A JP 4153898 B2 JP4153898 B2 JP 4153898B2
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Japan
Prior art keywords
transistor
output terminal
input terminal
power amplifier
electrode
Prior art date
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Expired - Fee Related
Application number
JP2004150427A
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English (en)
Japanese (ja)
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JP2004289869A5 (enExample
JP2004289869A (ja
Inventor
修 加賀谷
健治 関根
英一 長谷
喜市 山下
静雄 近藤
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Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP2004150427A priority Critical patent/JP4153898B2/ja
Publication of JP2004289869A publication Critical patent/JP2004289869A/ja
Publication of JP2004289869A5 publication Critical patent/JP2004289869A5/ja
Application granted granted Critical
Publication of JP4153898B2 publication Critical patent/JP4153898B2/ja
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    • HELECTRICITY
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    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
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    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Microwave Amplifiers (AREA)
  • Amplifiers (AREA)
JP2004150427A 2004-05-20 2004-05-20 高周波電力増幅器モジュール Expired - Fee Related JP4153898B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004150427A JP4153898B2 (ja) 2004-05-20 2004-05-20 高周波電力増幅器モジュール

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JP2004150427A JP4153898B2 (ja) 2004-05-20 2004-05-20 高周波電力増幅器モジュール

Related Parent Applications (1)

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JP04104599A Division JP3667136B2 (ja) 1998-07-06 1999-02-19 高周波電力増幅器モジュール

Related Child Applications (1)

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JP2008136687A Division JP2008228347A (ja) 2008-05-26 2008-05-26 高周波電力増幅器モジュール

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JP2004289869A JP2004289869A (ja) 2004-10-14
JP2004289869A5 JP2004289869A5 (enExample) 2005-10-06
JP4153898B2 true JP4153898B2 (ja) 2008-09-24

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Publication number Priority date Publication date Assignee Title
US10951174B2 (en) 2016-10-24 2021-03-16 Mitsubishi Electric Corporation High-frequency amplifier

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