JP4145587B2 - 表示装置 - Google Patents
表示装置 Download PDFInfo
- Publication number
- JP4145587B2 JP4145587B2 JP2002204559A JP2002204559A JP4145587B2 JP 4145587 B2 JP4145587 B2 JP 4145587B2 JP 2002204559 A JP2002204559 A JP 2002204559A JP 2002204559 A JP2002204559 A JP 2002204559A JP 4145587 B2 JP4145587 B2 JP 4145587B2
- Authority
- JP
- Japan
- Prior art keywords
- charge
- unit
- sensor
- light
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000006243 chemical reaction Methods 0.000 claims description 21
- 238000009825 accumulation Methods 0.000 claims description 7
- 238000003860 storage Methods 0.000 claims description 4
- 238000001514 detection method Methods 0.000 description 64
- 239000000758 substrate Substances 0.000 description 34
- 239000003990 capacitor Substances 0.000 description 27
- 239000000872 buffer Substances 0.000 description 26
- 238000010586 diagram Methods 0.000 description 21
- 239000010408 film Substances 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- -1 phosphorus ions Chemical class 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000012464 large buffer Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Liquid Crystal Display Device Control (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Transforming Electric Information Into Light Information (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002204559A JP4145587B2 (ja) | 2002-07-12 | 2002-07-12 | 表示装置 |
| CNB031458602A CN1331347C (zh) | 2002-07-12 | 2003-07-11 | 显示装置 |
| US10/616,979 US7205988B2 (en) | 2002-07-12 | 2003-07-11 | Display device |
| TW092119028A TWI225232B (en) | 2002-07-12 | 2003-07-11 | Display device |
| KR10-2003-0047174A KR100537704B1 (ko) | 2002-07-12 | 2003-07-11 | 표시 장치 |
| US11/620,789 US7737962B2 (en) | 2002-07-12 | 2007-01-08 | Display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002204559A JP4145587B2 (ja) | 2002-07-12 | 2002-07-12 | 表示装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008131026A Division JP4786683B2 (ja) | 2008-05-19 | 2008-05-19 | 表示装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004045879A JP2004045879A (ja) | 2004-02-12 |
| JP2004045879A5 JP2004045879A5 (enExample) | 2005-10-27 |
| JP4145587B2 true JP4145587B2 (ja) | 2008-09-03 |
Family
ID=31710126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002204559A Expired - Lifetime JP4145587B2 (ja) | 2002-07-12 | 2002-07-12 | 表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4145587B2 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4257221B2 (ja) | 2003-03-31 | 2009-04-22 | 東芝松下ディスプレイテクノロジー株式会社 | 表示装置および情報端末装置 |
| KR100923025B1 (ko) * | 2003-10-23 | 2009-10-22 | 삼성전자주식회사 | 광감지 소자와, 이를 갖는 어레이 기판 및 액정 표시 장치 |
| US7612818B2 (en) | 2004-03-29 | 2009-11-03 | Toshiba Matsushita Display Technology Co., Ltd. | Input sensor containing display device and method for driving the same |
| JP4703206B2 (ja) * | 2004-05-31 | 2011-06-15 | 東芝モバイルディスプレイ株式会社 | 画像取込機能付き表示装置 |
| JP2005339444A (ja) * | 2004-05-31 | 2005-12-08 | Toshiba Matsushita Display Technology Co Ltd | 表示装置 |
| KR20060062164A (ko) * | 2004-12-03 | 2006-06-12 | 삼성전자주식회사 | 광센서를 내장하는 표시 장치 |
| KR100604067B1 (ko) * | 2004-12-24 | 2006-07-24 | 삼성에스디아이 주식회사 | 버퍼 및 이를 이용한 데이터 집적회로와 발광 표시장치 |
| JP4509004B2 (ja) * | 2005-03-31 | 2010-07-21 | 三星モバイルディスプレイ株式會社 | バッファー及びこれを利用したデータ駆動回路と発光表示装置 |
| JP4645822B2 (ja) | 2005-04-19 | 2011-03-09 | ソニー株式会社 | 画像表示装置および物体の検出方法 |
| KR100961072B1 (ko) * | 2005-06-09 | 2010-06-01 | 엘지디스플레이 주식회사 | 이미지 센싱 기능을 가지는 액정표시장치 및 그 제조방법과이를 이용한 이미지 센싱 방법 |
| JP5131508B2 (ja) | 2005-11-14 | 2013-01-30 | Nltテクノロジー株式会社 | 受光回路 |
| GB2439118A (en) * | 2006-06-12 | 2007-12-19 | Sharp Kk | Image sensor and display |
| GB2439098A (en) | 2006-06-12 | 2007-12-19 | Sharp Kk | Image sensor and display |
| KR101281830B1 (ko) * | 2006-09-26 | 2013-07-03 | 엘지디스플레이 주식회사 | 멀티 터치 감지기능을 갖는 액정표시장치와 그 구동방법 |
| KR101309174B1 (ko) | 2006-11-15 | 2013-09-23 | 삼성디스플레이 주식회사 | 표시 장치와 그 제조 방법 |
| JP4893683B2 (ja) * | 2008-04-11 | 2012-03-07 | ソニー株式会社 | 画像表示装置 |
| CN102132233B (zh) * | 2008-09-02 | 2013-11-13 | 夏普株式会社 | 显示装置 |
| DE102009025483A1 (de) * | 2009-06-18 | 2011-01-05 | Siemens Aktiengesellschaft | Display |
-
2002
- 2002-07-12 JP JP2002204559A patent/JP4145587B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004045879A (ja) | 2004-02-12 |
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