JP4141441B2 - 急速熱処理装置の加熱モジュール - Google Patents
急速熱処理装置の加熱モジュール Download PDFInfo
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- JP4141441B2 JP4141441B2 JP2004548125A JP2004548125A JP4141441B2 JP 4141441 B2 JP4141441 B2 JP 4141441B2 JP 2004548125 A JP2004548125 A JP 2004548125A JP 2004548125 A JP2004548125 A JP 2004548125A JP 4141441 B2 JP4141441 B2 JP 4141441B2
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- Prior art keywords
- reflector
- cooling gas
- heating module
- heating furnace
- flow path
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000010438 heat treatment Methods 0.000 title claims description 92
- 239000000112 cooling gas Substances 0.000 claims description 61
- 239000007789 gas Substances 0.000 claims description 43
- 239000010453 quartz Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000000498 cooling water Substances 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- -1 tungsten halogen Chemical class 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0033—Heating devices using lamps
- H05B3/0038—Heating devices using lamps for industrial applications
- H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
Description
Claims (12)
- その片側に複数の反射体、および前記各反射体の内側を前記反射体の別の外側と各々連通させるための複数の第1のガス流路とを備える加熱炉と、
前記各反射体に設置されるランプと、
前記加熱炉の別の外側に設置され、前記加熱炉に形成された各第1のガス流路と各々連通するように、そこを貫通して穴をあけられた複数の第1の冷却ガス流入穴を有する冷却ガス流入装置と、
前記反射体の端部と反射体の端部に向かい合う窓の表面との間に第2のガス流路を画定するように、前記反射体の端部から所定の間隔離れながら前記反射体の下部に設置された石英窓と、
前記加熱炉に前記石英窓を固定させる石英窓固定装置と、
および前記第2のガス流路と通じる冷却ガス排出装置とを備える急速熱処理用装置の加熱モジュールであって、
前記加熱炉は、各棒型ランプが縦方向に設置されるように前記反射体が横方向に互いに並行に形成された第1の反射体部と、
前記第1の反射体部と縦方向に反対側に配置される第2の反射体部と、
および、前記第1の反射体部と前記第2の反射体部との間に配置され、そこに各棒型ランプが横方向に設置されるように前記反射体が縦方向に互いに並行に形成された第3の反射体部と、を備えることを特徴とする急速熱処理用装置の加熱モジュール。 - 前記加熱炉が、その中に冷却水の水路を備えることを特徴とする請求項1に記載の加熱モジュール。
- 各反射体が各第1の冷却ガス流入穴と一対一の方法で対応した状態で、前記第1のガス流路が、各反射体の内側を対応する第1の冷却ガス流入穴と連通させるために、前記加熱炉に多数形成されていることを特徴とする請求項1に記載の加熱モジュール。
- 前記第1の冷却ガス流入穴のそれぞれは、流入する冷却ガスの拡散のために、その冷却ガス流入端よりも、冷却ガス排出端での内側断面積が大きいことを特徴とする請求項1または3に記載の加熱モジュール。
- 各第1の冷却ガス流入穴は、その冷却ガス流入端と隣接するドーム型の形状の所定領域を有することを特徴とする請求項4に記載の加熱モジュール。
- 各反射体は、ドーム型部と、それに隣接するドーム型部の端部から外側に向かって広がるように傾斜された側壁とからなり、各反射体は、その両側に位置する隣の反射体と隣接する側壁を共有することを特徴とする請求項1に記載の加熱モジュール。
- 前記反射体の側壁は横方向に貫通する細長い穴が形成されていることを特徴とする請求項6に記載の加熱モジュール。
- 前記加熱炉は、前記反射体を冷却するための冷却水の水路をその中に備え、各水路は各反射体のドーム型部と近接するその所定領域が曲線部を形成するように構成されており、そして各反射体の前記側壁に近接する他の所定領域は、それに近接する曲線部の端部からお互いに向かって内側に傾斜された傾斜部を形成しており、それによって、冷却水が前記側壁の全部にわたって流れるようにすることを特徴とする請求項6または7に記載の加熱モジュール。
- 前記第3の反射体部は、横方向に互いに向かい合うように備えられた少なくとも二つの第3の反射体部を含み、加熱炉はさらに、2つの第3の反射体部の間に、U字型ランプが設置される第4の反射体部を備えることを特徴とする請求項1に記載の加熱モジュール。
- 各U字型ランプと結合されるように電極を各々設置するために、前記加熱炉は縦方向に貫通する穴がさらに形成されることを特徴とする請求項9に記載の加熱モジュール。
- 前記加熱炉は、前記第2のガス流路と前記加熱炉の他の外側とを連通させるための少なくとも一つの第3のガス流路が備えられ、
前記冷却ガス流入装置は、前記加熱炉に一対一の方法で形成された前記第3のガス流路と対応する少なくとも一つの第2の冷却ガス流入穴がさらに形成されることを特徴とする請求項1に記載の加熱モジュール。 - 前記石英窓固定装置は、前記第2のガス流路と通じるガス捕集部と、前記第2のガス流路と通じる第3の冷却ガス流入穴を備え、
前記冷却ガス排出装置は、前記ガス捕集部と通じることを特徴とする請求項1に記載の加熱モジュール。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0067387A KR100377011B1 (ko) | 2002-11-01 | 2002-11-01 | 급속 열처리 장치의 히터 모듈 |
PCT/KR2003/001439 WO2004040636A1 (en) | 2002-11-01 | 2003-07-21 | Heater module of rapid thermal processing apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006505123A JP2006505123A (ja) | 2006-02-09 |
JP4141441B2 true JP4141441B2 (ja) | 2008-08-27 |
Family
ID=27729098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004548125A Expired - Fee Related JP4141441B2 (ja) | 2002-11-01 | 2003-07-21 | 急速熱処理装置の加熱モジュール |
Country Status (6)
Country | Link |
---|---|
US (1) | US6837589B2 (ja) |
EP (1) | EP1559135A4 (ja) |
JP (1) | JP4141441B2 (ja) |
KR (1) | KR100377011B1 (ja) |
CN (1) | CN100342504C (ja) |
WO (1) | WO2004040636A1 (ja) |
Families Citing this family (20)
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KR101324211B1 (ko) * | 2006-05-29 | 2013-11-06 | 주성엔지니어링(주) | 기판 처리 장치 |
JP2008182180A (ja) * | 2006-12-26 | 2008-08-07 | Epicrew Inc | 加熱装置及び半導体製造装置 |
US8314368B2 (en) * | 2008-02-22 | 2012-11-20 | Applied Materials, Inc. | Silver reflectors for semiconductor processing chambers |
JP5362251B2 (ja) * | 2008-04-16 | 2013-12-11 | 大日本スクリーン製造株式会社 | 熱処理装置 |
US20120145697A1 (en) * | 2009-08-18 | 2012-06-14 | Tokyo Electron Limmited | Heat treatment apparatus |
JP6230073B2 (ja) * | 2012-02-24 | 2017-11-15 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 加熱ランプのまわりの空気流の減少を容易にするための基部を有する加熱ランプ |
CN103374698A (zh) * | 2012-04-23 | 2013-10-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 加热腔室以及等离子体加工设备 |
KR101503117B1 (ko) * | 2012-08-31 | 2015-03-16 | 엘지디스플레이 주식회사 | 경화장치 |
KR101324210B1 (ko) * | 2012-10-10 | 2013-11-06 | 주성엔지니어링(주) | 기판 처리 장치 |
KR102434287B1 (ko) * | 2013-03-15 | 2022-08-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 단순화된 램프 설계 |
KR102228941B1 (ko) * | 2013-11-22 | 2021-03-17 | 어플라이드 머티어리얼스, 인코포레이티드 | 접근이 용이한 램프헤드 |
KR101458963B1 (ko) * | 2014-02-18 | 2014-11-12 | 민정은 | 급속 열처리장치용 히터장치 |
JP6899248B2 (ja) * | 2017-04-24 | 2021-07-07 | 株式会社Screenホールディングス | 熱処理装置 |
JP6916988B2 (ja) * | 2017-05-29 | 2021-08-11 | ウシオ電機株式会社 | 光加熱装置 |
KR102161165B1 (ko) * | 2018-05-18 | 2020-09-29 | 에이피시스템 주식회사 | 히터 블록, 열 처리 장치 및 방법 |
US11680338B2 (en) * | 2019-12-19 | 2023-06-20 | Applied Materials, Inc. | Linear lamp array for improved thermal uniformity and profile control |
CN112738928B (zh) * | 2020-12-04 | 2022-11-22 | 上海航天精密机械研究所 | 一种通用型组合冷却式模块化辐射加热器 |
CN112744370B (zh) * | 2020-12-30 | 2024-08-20 | 中国航天空气动力技术研究院 | 一种3d打印电弧加热器旋气室 |
US20220322492A1 (en) * | 2021-04-06 | 2022-10-06 | Applied Materials, Inc. | Epitaxial deposition chamber |
KR102335630B1 (ko) * | 2021-04-20 | 2021-12-08 | (주)앤피에스 | 열원 장치, 기판 지지 장치 및 기판 처리 설비 |
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-
2002
- 2002-11-01 KR KR10-2002-0067387A patent/KR100377011B1/ko not_active IP Right Cessation
-
2003
- 2003-07-21 CN CNB038246457A patent/CN100342504C/zh not_active Expired - Lifetime
- 2003-07-21 EP EP03741598A patent/EP1559135A4/en not_active Withdrawn
- 2003-07-21 JP JP2004548125A patent/JP4141441B2/ja not_active Expired - Fee Related
- 2003-07-21 WO PCT/KR2003/001439 patent/WO2004040636A1/en active Application Filing
- 2003-07-23 US US10/624,684 patent/US6837589B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR20020090987A (ko) | 2002-12-05 |
WO2004040636A1 (en) | 2004-05-13 |
EP1559135A4 (en) | 2007-12-12 |
US6837589B2 (en) | 2005-01-04 |
JP2006505123A (ja) | 2006-02-09 |
KR100377011B1 (ko) | 2003-03-19 |
EP1559135A1 (en) | 2005-08-03 |
CN1695236A (zh) | 2005-11-09 |
CN100342504C (zh) | 2007-10-10 |
US20040125593A1 (en) | 2004-07-01 |
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