JP4127394B2 - 半導体発光素子およびそれを使用した表示装置並びに光学式情報再生装置 - Google Patents

半導体発光素子およびそれを使用した表示装置並びに光学式情報再生装置 Download PDF

Info

Publication number
JP4127394B2
JP4127394B2 JP2003402312A JP2003402312A JP4127394B2 JP 4127394 B2 JP4127394 B2 JP 4127394B2 JP 2003402312 A JP2003402312 A JP 2003402312A JP 2003402312 A JP2003402312 A JP 2003402312A JP 4127394 B2 JP4127394 B2 JP 4127394B2
Authority
JP
Japan
Prior art keywords
layer
light emitting
semiconductor light
substrate
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003402312A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004096132A (ja
JP2004096132A5 (enExample
Inventor
幸生 山崎
茂稔 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2003402312A priority Critical patent/JP4127394B2/ja
Publication of JP2004096132A publication Critical patent/JP2004096132A/ja
Publication of JP2004096132A5 publication Critical patent/JP2004096132A5/ja
Application granted granted Critical
Publication of JP4127394B2 publication Critical patent/JP4127394B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Led Devices (AREA)
JP2003402312A 1999-08-31 2003-12-01 半導体発光素子およびそれを使用した表示装置並びに光学式情報再生装置 Expired - Fee Related JP4127394B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003402312A JP4127394B2 (ja) 1999-08-31 2003-12-01 半導体発光素子およびそれを使用した表示装置並びに光学式情報再生装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP24679199 1999-08-31
JP2003402312A JP4127394B2 (ja) 1999-08-31 2003-12-01 半導体発光素子およびそれを使用した表示装置並びに光学式情報再生装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2000171342A Division JP3511372B2 (ja) 1999-08-31 2000-06-07 半導体発光素子およびそれを使用した表示装置

Publications (3)

Publication Number Publication Date
JP2004096132A JP2004096132A (ja) 2004-03-25
JP2004096132A5 JP2004096132A5 (enExample) 2007-07-19
JP4127394B2 true JP4127394B2 (ja) 2008-07-30

Family

ID=32071413

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003402312A Expired - Fee Related JP4127394B2 (ja) 1999-08-31 2003-12-01 半導体発光素子およびそれを使用した表示装置並びに光学式情報再生装置

Country Status (1)

Country Link
JP (1) JP4127394B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024181554A1 (ja) * 2023-03-01 2024-09-06 レーハン フー サファイア基板を処理する方法、サファイア基板の上にエピタキシャル薄膜を形成する方法、サファイア基板、エピタキシャル薄膜、及びそれらを備えるデバイス及び装置。

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006134975A (ja) 2004-11-04 2006-05-25 Hitachi Displays Ltd 照明装置及びこの照明装置を用いた表示装置
JP5349737B2 (ja) * 2006-02-27 2013-11-20 シャープ株式会社 窒化物半導体発光素子の製造方法
KR101283233B1 (ko) 2007-06-25 2013-07-11 엘지이노텍 주식회사 발광 소자 및 그 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024181554A1 (ja) * 2023-03-01 2024-09-06 レーハン フー サファイア基板を処理する方法、サファイア基板の上にエピタキシャル薄膜を形成する方法、サファイア基板、エピタキシャル薄膜、及びそれらを備えるデバイス及び装置。

Also Published As

Publication number Publication date
JP2004096132A (ja) 2004-03-25

Similar Documents

Publication Publication Date Title
JP3511372B2 (ja) 半導体発光素子およびそれを使用した表示装置
US6940100B2 (en) Group III-V nitride semiconductor light-emitting device which allows for efficient injection of electrons into an active layer
KR100537711B1 (ko) 질화물 반도체 발광 소자와 그것을 포함하는 광학 장치
US6249534B1 (en) Nitride semiconductor laser device
JP5383313B2 (ja) 窒化物半導体発光装置
US6370176B1 (en) Gallium nitride group semiconductor laser device and optical pickup apparatus
JP2000261106A (ja) 半導体発光素子、その製造方法及び光ディスク装置
US20110101419A1 (en) Semiconductor device, method of manufacturing semiconductor device and optical apparatus
JP2000022277A (ja) 発光素子及びその製造方法
US20050072984A1 (en) Light emitting device assembly
US7259447B2 (en) Flip-chip type nitride semiconductor light emitting diode
KR100436195B1 (ko) 반도체 레이저 장치
JPWO2009057254A1 (ja) 半導体レーザ装置
JP3519990B2 (ja) 発光素子及びその製造方法
US7535942B2 (en) Semiconductor laser device including a light shield plate, semiconductor laser device package, and methods of manufacturing the same
JP4127394B2 (ja) 半導体発光素子およびそれを使用した表示装置並びに光学式情報再生装置
JP2003017808A (ja) 窒化ガリウム系半導体発光素子
US6556603B1 (en) Nitride-contained semiconductor laser element and optical information reproducing device
EP0952645B1 (en) Semiconductor laser device
KR101221067B1 (ko) 리지 도파형 반도체 레이저 다이오드
US20050180475A1 (en) Semiconductor laser device
JP4960777B2 (ja) 端面発光型半導体レーザチップ
JP2010238954A (ja) 半導体発光素子、光ピックアップ装置、光源装置および半導体発光素子の製造方法
US20020141468A1 (en) Semiconductor laser device, method of fabricating the same and optical information reproduction apparatus
JP2009238834A (ja) 窒化物系半導体層を有する支持基板およびその形成方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070531

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070531

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20071010

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071119

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20071214

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080207

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20080507

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20080507

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110523

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110523

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120523

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120523

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130523

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140523

Year of fee payment: 6

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: R3D04

LAPS Cancellation because of no payment of annual fees