JP4122113B2 - 高破壊耐量電界効果型トランジスタ - Google Patents

高破壊耐量電界効果型トランジスタ Download PDF

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Publication number
JP4122113B2
JP4122113B2 JP17795099A JP17795099A JP4122113B2 JP 4122113 B2 JP4122113 B2 JP 4122113B2 JP 17795099 A JP17795099 A JP 17795099A JP 17795099 A JP17795099 A JP 17795099A JP 4122113 B2 JP4122113 B2 JP 4122113B2
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JP
Japan
Prior art keywords
diffusion layer
layer
fixed potential
drain
electrode film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP17795099A
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English (en)
Japanese (ja)
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JP2001007322A (ja
JP2001007322A5 (enExample
Inventor
秀幸 中村
宣樹 宮腰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP17795099A priority Critical patent/JP4122113B2/ja
Priority to US09/595,910 priority patent/US6369424B1/en
Priority to EP00113361A priority patent/EP1063705A3/en
Publication of JP2001007322A publication Critical patent/JP2001007322A/ja
Publication of JP2001007322A5 publication Critical patent/JP2001007322A5/ja
Application granted granted Critical
Publication of JP4122113B2 publication Critical patent/JP4122113B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S370/00—Multiplex communications
    • Y10S370/901—Wide area network

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP17795099A 1999-06-24 1999-06-24 高破壊耐量電界効果型トランジスタ Expired - Lifetime JP4122113B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP17795099A JP4122113B2 (ja) 1999-06-24 1999-06-24 高破壊耐量電界効果型トランジスタ
US09/595,910 US6369424B1 (en) 1999-06-24 2000-06-20 Field effect transistor having high breakdown withstand capacity
EP00113361A EP1063705A3 (en) 1999-06-24 2000-06-23 Field effect transistor having high breakdown withstand capacity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17795099A JP4122113B2 (ja) 1999-06-24 1999-06-24 高破壊耐量電界効果型トランジスタ

Publications (3)

Publication Number Publication Date
JP2001007322A JP2001007322A (ja) 2001-01-12
JP2001007322A5 JP2001007322A5 (enExample) 2005-10-27
JP4122113B2 true JP4122113B2 (ja) 2008-07-23

Family

ID=16039925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17795099A Expired - Lifetime JP4122113B2 (ja) 1999-06-24 1999-06-24 高破壊耐量電界効果型トランジスタ

Country Status (3)

Country Link
US (1) US6369424B1 (enExample)
EP (1) EP1063705A3 (enExample)
JP (1) JP4122113B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2381480A1 (en) 2001-04-04 2011-10-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with a drain layer
US6492679B1 (en) * 2001-08-03 2002-12-10 Semiconductor Components Industries Llc Method for manufacturing a high voltage MOSFET device with reduced on-resistance
EP2259325B1 (en) * 2002-02-20 2013-12-25 Shindengen Electric Manufacturing Co., Ltd. Transistor device
JP3779243B2 (ja) * 2002-07-31 2006-05-24 富士通株式会社 半導体装置及びその製造方法
JP4731796B2 (ja) * 2003-03-31 2011-07-27 三洋電機株式会社 Ｍｏｓｆｅｔ
DE102004004045B4 (de) * 2004-01-27 2009-04-02 Infineon Technologies Ag Halbleiterbauelement mit temporärem Feldstoppbereich und Verfahren zu dessen Herstellung
JP5048273B2 (ja) * 2006-05-10 2012-10-17 オンセミコンダクター・トレーディング・リミテッド 絶縁ゲート型半導体装置
TWI381455B (zh) * 2008-04-22 2013-01-01 Pfc Device Co 金氧半ｐ－ｎ接面二極體結構及其製作方法
JP5765251B2 (ja) * 2012-01-24 2015-08-19 三菱電機株式会社 半導体装置及びその製造方法
KR20130100557A (ko) * 2012-03-02 2013-09-11 삼성전자주식회사 무선통신 시스템에서 메모리 클럭 주파수를 제어하는 장치 및 방법
JP2016174030A (ja) 2015-03-16 2016-09-29 株式会社東芝 半導体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3391287A (en) 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
DK157272C (da) * 1978-10-13 1990-04-30 Int Rectifier Corp Mosfet med hoej effekt
US5191396B1 (en) 1978-10-13 1995-12-26 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
JPS57160159A (en) 1981-03-28 1982-10-02 Toshiba Corp High breakdown voltage planar type semiconductor device
JPS58100460A (ja) * 1981-12-11 1983-06-15 Hitachi Ltd 縦形ｍｏｓ半導体装置
US4789882A (en) 1983-03-21 1988-12-06 International Rectifier Corporation High power MOSFET with direct connection from connection pads to underlying silicon
JPS61285764A (ja) * 1985-06-12 1986-12-16 Tdk Corp 高耐圧半導体装置
US5686750A (en) * 1991-09-27 1997-11-11 Koshiba & Partners Power semiconductor device having improved reverse recovery voltage
US5430314A (en) * 1992-04-23 1995-07-04 Siliconix Incorporated Power device with buffered gate shield region
JP2870402B2 (ja) * 1994-03-10 1999-03-17 株式会社デンソー 絶縁ゲート型電界効果トランジスタ
US5747853A (en) 1996-08-07 1998-05-05 Megamos Corporation Semiconductor structure with controlled breakdown protection

Also Published As

Publication number Publication date
EP1063705A3 (en) 2003-05-21
US6369424B1 (en) 2002-04-09
JP2001007322A (ja) 2001-01-12
EP1063705A2 (en) 2000-12-27

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