JP4111130B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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JP4111130B2
JP4111130B2 JP2003402360A JP2003402360A JP4111130B2 JP 4111130 B2 JP4111130 B2 JP 4111130B2 JP 2003402360 A JP2003402360 A JP 2003402360A JP 2003402360 A JP2003402360 A JP 2003402360A JP 4111130 B2 JP4111130 B2 JP 4111130B2
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wire
semiconductor device
surface electrode
electrode
semiconductor element
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JP2005166854A (ja
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靖 豊田
克明 斎藤
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Hitachi Ltd
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Hitachi Ltd
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Description

本発明は半導体装置に係り、特に、サージ電流破壊耐量の高いダイオードを有するものに好適な半導体装置に関する。
ＩＧＢＴ、ダイオード、ＧＴＯ、トランジスタ等のパワー半導体モジュールが従来技術として知られている。これらのパワー半導体素子はその耐圧や電流容量に応じて、各種インバータ装置などに適用されている。中でもＩＧＢＴは大電流の高周波動作が可能であり、電圧制御素子であるために制御が容易であるなどの利点を有している。また安全性や実装上の簡便性から、多くの場合はモジュールのベース部分と電流通流部分とが絶縁基板によって電気的に絶縁された、内部絶縁型の構造となっている。
ＩＧＢＴモジュールでは、逆電圧印加防止と還流目的でダイオードが設けてある場合が多い。このダイオードに要求される特性の中に、サージ電流破壊耐量がある。これは何らかの理由により突発的に大電流がダイオードを流れても破壊しない電流を示すもので、想定される波形である正弦波電流に対して規定されることが多い。このサージ電流破壊耐量が高いほど、実使用において誤動作による半導体装置の破壊確率が下がり、使いやすいものになる。
このサージ電流によってダイオードが破壊する場合、ダイオード素子におけるワイヤ近傍の半導体素子表面に形成した電極（以下、表面電極と略す。）が溶解している。このことからワイヤ付近の表面電極部に大電流が集中し、温度上昇により電極が溶解したと考えられる。つまり表面電極部に局所的に電流を集中させない構造を持たせることがサージ電流破壊耐量向上に有効である。そのための手法として、ワイヤの抵抗値を等しくする方法が特許文献１に開示されている。この特許文献１では図３（ａ）に示すワイヤ３の抵抗値を全て等しくしてある。なお、図３（ａ）において、符号１は電力半導体素子、２は表面電極、３はワイヤ、４、５は外部電極、６は絶縁基板、８はワイヤと電極との接合部である。また、図３（ｂ）は、図３（ａ）のＣ−Ｃ′での断面図であり、符号７は半田を示す。
また、特許文献２では、外部電極のエリアや空間的スペースを小さくするために、１本のワイヤを表面電極上の２箇所以上で接合する手法を開示している。
特開平４−９４１４１号公報 特開平１０−３２２１８号公報
前記特許文献１に記載されているようにワイヤの抵抗値を等しくしただけでは、ワイヤ接合部の表面電極が溶解することの本質的な対策にはならず、ワイヤの本数を増やすなどしてワイヤ接合部の数をできるだけ多くして、表面電極の電流密度を下げる必要がある。しかしながら、表面電極や外部電極のワイヤ接合可能エリアが狭かったり、あるいは空間的スペースが狭い場合には、ワイヤの本数を多くできない問題がある。
また、前記特許文献２に記載されているように、単に接合箇所を増やしただけでは、外部電極に最も近い接点に電流が集中するので、サージ電流破壊耐量を向上できない。
本発明の目的は、表面電極上のワイヤ接合部における電流集中が小さく、サージ電流破壊耐量が高い半導体装置を提供することである。
本発明の半導体装置は、上記目的を達成するために、半導体素子と外部基板とを接合する１本の金属ワイヤと半導体素子の表面電極とが２箇所以上で接合され、かつ前記金属ワイヤが、前記各接合部の間を表面電極に沿ってループを形成することなく直線配置されていることを特徴とする。
本発明の半導体装置は、表面電極上のワイヤ接合部における電流集中が小さく、サージ電流破壊耐量を高くできる。
以下本発明の実施例の詳細を図面を参照しながら説明する。
図１（ａ）は、本実施例の半導体装置の平面図を示す。また、図１（ｂ）は図１（ａ）のＡ−Ａ′での断面図である。図１（ａ）、図１（ｂ）で、符号１は電力半導体素子、２は表面電極、３はワイヤ、４、５は外部電極、６は絶縁基板、７は半田、８はワイヤ３と表面電極２との接合部、９はワイヤと外部電極５との接合部である。表面電極２は電力半導体素子１の表面に形成されていて、外部電極４は電力半導体素子１の裏面と半田７を介して電気的に接合している。以下、電力半導体素子１としてシリコン基板に形成したダイオードを例に説明する。
ワイヤ３は外部電極５から半導体素子１へ電流を流す役目をしており、半導体素子１の表面電極２によって導通している。本実施例では、ワイヤ３はアルミニウムワイヤあるいは、アルミニウムを主成分とするアルミニウム合金ワイヤであり、その直径は１５０μｍから１mm程度である。また、表面電極２はシリコン半導体基板に直接あるいは絶縁膜を介して配置したアルミニウム膜あるいはアルミニウムを主成分とするアルミニウム合金（例えばＡｌ−Ｓｉ合金）の膜であって、１辺が３mmから１５mm程度の４辺形である。表面電極２は、アルミニウムあるいはアルミニウム合金と、例えば、ＴｉＷなどとを積層した多層膜であっても良い。ワイヤ３と表面電極２や外部電極５とは、例えば超音波接合によって電気的に接合されている。なお、ワイヤ３は径が太過ぎると表面電極２への接合の際に過大な圧力を加え表面電極にダメージを与えるので、好ましくない。
本実施例では、１本のワイヤ３が電力半導体素子１の表面電極２の上の複数箇所（図１（ａ）では２箇所）の接合部８で接合されているが、ワイヤ３は、その接合部８の間でループを形成せずに、表面電極２の電極面に沿って接合部８の間を最短の長さで１本の直線で結ぶように配置してある。このように本実施例の半導体装置ではワイヤ３が最短の長さで表面電極２の上の各接合部８を結んでいるので、複数の接合部８間のワイヤ３の電気抵抗が最も小さくなり、表面電極２側の接合部８への電流集中が回避できる。なお、１本のワイヤ３を表面電極に接続する接合部８の数は、２箇所から５箇所が好ましい。
本実施例では、図１（ａ）、図１（ｂ）に示すように、平行に配置した複数本数のワイヤ３全ての表面電極２側の端部をそれぞれ複数箇所の接合部８で接合しているが、このワイヤ３は１本であっても良い。また、複数あるワイヤ３のうちの、少なくとも１本のワイヤ３が図１（ａ）、図１（ｂ）に示すような接合部８を備えていても良い。このように本実施例では、ワイヤ３の本数を大きく増やしたり、ワイヤの径を極端に大きくすることなく、表面電極２側の接合部８への電流集中を回避したので、サージ電流破壊耐量が高い半導体装置を実現できた。
図２（ａ）に本実施例の半導体装置の平面図を示す。また、図２（ｂ）は、図２（ａ）のＢ−Ｂ′での断面図である。本実施例の半導体装置は、１本のワイヤ３が電力半導体素子１の表面電極２の１箇所の接合部８で接合されている。ワイヤ３の接合部８は、表面電極２の電極面に沿ってワイヤ３の直径の５倍から１００倍、好ましくは１０倍から５０倍の長さ、より好ましくは２０倍から４０倍の長さに渡って、接合している点が実施例１の半導体装置と異なる。接合部８の長さがワイヤ３の直径の５倍未満では表面電極２とワイヤ３との接合部８に過大な電流が集中し好ましくない。また、接合部８の長さがワイヤ３の直径の１００倍以上では、ワイヤ３を表面電極２にムラなく接合できない。
本実施例の半導体装置では、図２（ａ）、図２（ｂ）に示すように、ワイヤ３は表面電極２の横方向に渡って接合されていて、接合部８の接合面積が大きいので、表面電極２の局部的な電流密度上昇を回避でき、サージ電流破壊耐量が向上する。
本実施例の半導体装置は、複数本のワイヤ３のうち、１本のワイヤ３の表面電極２側の端部を複数箇所の接合部８で接合したものと、１本のワイヤ３が電力半導体素子１の表面電極２の１箇所の接合部８で接合していて、この接合部８が、表面電極２の電極面に沿ってワイヤ３の直径の５倍から１００倍、好ましくは１０倍から５０倍の長さに渡って接合しているものとを備えていることだけが前記実施例１、実施例２と異なる。本実施例でも表面電極２側の接合部８への電流集中を回避したので、サージ電流破壊耐量が高い半導体装置が実現できた。
実施例１の半導体装置の説明図である。 実施例２の半導体装置の説明図である。 従来技術の半導体装置の説明図である。
符号の説明
１…電力半導体素子、２…表面電極、３…ワイヤ、４，５…外部電極、６…絶縁基板、７…半田、８，９…接合部。

Claims (3)

  1. 表面に電極を有する半導体素子と、該半導体素子の外部に設けられた外部電極と、該外部電極と前記半導体素子とを搭載する絶縁基板と、前記半導体素子と外部基板とを接合する金属ワイヤとを備えた半導体装置において、
    １本の前記金属ワイヤと前記半導体素子の表面電極とが２箇所以上で接合され、かつ前記金属ワイヤが、前記各接合部の間を表面電極に沿ってループを形成することなく直線配置されていることを特徴とする半導体装置。
  2. 請求項１に記載の半導体装置において、
    前記金属ワイヤの材質が、アルミニウムもしくはアルミニウムを主成分とする合金であることを特徴とする半導体装置。
  3. 請求項１又は２に記載の半導体装置において、
    前記半導体素子がダイオードであり、前記半導体素子の表面電極がアルミニウムもしくはアルミニウム合金であることを特徴とする半導体装置。
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