JP4091014B2 - 半導体装置の洗浄方法ならびに半導体装置製造用機器の洗浄方法および洗浄装置 - Google Patents

半導体装置の洗浄方法ならびに半導体装置製造用機器の洗浄方法および洗浄装置 Download PDF

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JP4091014B2
JP4091014B2 JP2004092281A JP2004092281A JP4091014B2 JP 4091014 B2 JP4091014 B2 JP 4091014B2 JP 2004092281 A JP2004092281 A JP 2004092281A JP 2004092281 A JP2004092281 A JP 2004092281A JP 4091014 B2 JP4091014 B2 JP 4091014B2
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semiconductor device
cleaning
cyanide
solution
substrate
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JP2005039198A (ja
JP2005039198A5 (enExample
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光 小林
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Japan Science and Technology Agency
National Institute of Japan Science and Technology Agency
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Japan Science and Technology Agency
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2004092281A 2003-06-24 2004-03-26 半導体装置の洗浄方法ならびに半導体装置製造用機器の洗浄方法および洗浄装置 Expired - Fee Related JP4091014B2 (ja)

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JP2004092281A JP4091014B2 (ja) 2003-06-24 2004-03-26 半導体装置の洗浄方法ならびに半導体装置製造用機器の洗浄方法および洗浄装置

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JP2003178855 2003-06-24
JP2004092281A JP4091014B2 (ja) 2003-06-24 2004-03-26 半導体装置の洗浄方法ならびに半導体装置製造用機器の洗浄方法および洗浄装置

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JP2005039198A JP2005039198A (ja) 2005-02-10
JP2005039198A5 JP2005039198A5 (enExample) 2005-09-15
JP4091014B2 true JP4091014B2 (ja) 2008-05-28

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Families Citing this family (7)

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Publication number Priority date Publication date Assignee Title
JP4947454B2 (ja) * 2005-04-13 2012-06-06 国立大学法人大阪大学 半導体処理液の製造方法及びその製造装置
JP2008066349A (ja) * 2006-09-04 2008-03-21 Osaka Univ 光半導体デバイスおよびその製造方法並びにその製造装置
JP5633838B2 (ja) * 2009-03-27 2014-12-03 小林　光 半導体基板の処理方法および半導体装置の製造方法。
WO2012011188A1 (ja) * 2010-07-23 2012-01-26 株式会社Ｋｉｔ 太陽電池およびその製造方法、並びに太陽電池の製造装置
WO2012025984A1 (ja) * 2010-08-24 2012-03-01 株式会社Ｋｉｔ 半導体装置の製造装置及び半導体装置の製造方法
CN102142369A (zh) * 2011-01-05 2011-08-03 复旦大学 一种改善SiC器件性能的方法
CN117324291B (zh) * 2023-09-11 2024-10-15 江苏凯威特斯半导体科技有限公司 一种关于CVD Shower Head部件的清洗方法

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