JP4078989B2 - プラズマアッシング方法 - Google Patents
プラズマアッシング方法 Download PDFInfo
- Publication number
- JP4078989B2 JP4078989B2 JP2003013058A JP2003013058A JP4078989B2 JP 4078989 B2 JP4078989 B2 JP 4078989B2 JP 2003013058 A JP2003013058 A JP 2003013058A JP 2003013058 A JP2003013058 A JP 2003013058A JP 4078989 B2 JP4078989 B2 JP 4078989B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- electrode
- plasma
- resist
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003013058A JP4078989B2 (ja) | 2002-10-18 | 2003-01-22 | プラズマアッシング方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002304782 | 2002-10-18 | ||
| JP2003013058A JP4078989B2 (ja) | 2002-10-18 | 2003-01-22 | プラズマアッシング方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004193536A JP2004193536A (ja) | 2004-07-08 |
| JP2004193536A5 JP2004193536A5 (enExample) | 2006-02-09 |
| JP4078989B2 true JP4078989B2 (ja) | 2008-04-23 |
Family
ID=32774442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003013058A Expired - Fee Related JP4078989B2 (ja) | 2002-10-18 | 2003-01-22 | プラズマアッシング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4078989B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4815771B2 (ja) * | 2004-09-01 | 2011-11-16 | 住友電気工業株式会社 | 電気部品の製造方法 |
| WO2025197721A1 (ja) * | 2024-03-22 | 2025-09-25 | 東京エレクトロン株式会社 | 基板処理方法及びプラズマ処理装置 |
-
2003
- 2003-01-22 JP JP2003013058A patent/JP4078989B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004193536A (ja) | 2004-07-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20100216312A1 (en) | Resist removing method, semiconductor manufacturing method, and resist removing apparatus | |
| JP4312630B2 (ja) | プラズマ処理方法及びプラズマ処理装置 | |
| CN104956476A (zh) | 用于垂直nand器件的新型掩模去除方法策略 | |
| JPH06260461A (ja) | プラズマによる基板表面の洗浄方法 | |
| JP2010034415A (ja) | プラズマ処理方法 | |
| JPH06177088A (ja) | アッシング方法及びアッシング装置 | |
| CN100514573C (zh) | 基板处理方法 | |
| JP4078989B2 (ja) | プラズマアッシング方法 | |
| JP2018182315A (ja) | パターン崩壊を防ぐためのエッチング後処理 | |
| JPH10135182A (ja) | レジスト除去方法及びレジスト除去装置 | |
| JP2008085231A (ja) | 基板上の残留有機物除去方法 | |
| US20080268211A1 (en) | Line end shortening reduction during etch | |
| TW200822208A (en) | Method and system for manufacturing semiconductor device, computer storage medium, and storage medium for storing the processing recipe | |
| CN111081530A (zh) | 蚀刻方法和等离子体处理装置 | |
| JP2000012521A (ja) | プラズマアッシング方法 | |
| JP2011192764A (ja) | 膜の除去方法及び膜除去用装置 | |
| JP2004259819A (ja) | 試料の表面処理装置及び表面処理方法 | |
| KR100190498B1 (ko) | 다결정실리콘막의 에칭방법 | |
| JP4078935B2 (ja) | プラズマアッシング方法 | |
| JP5600447B2 (ja) | プラズマエッチング方法 | |
| JP2000031126A (ja) | レジストの除去方法 | |
| JP4273778B2 (ja) | 高誘電体材料の加工方法 | |
| JP4018323B2 (ja) | アッシング方法 | |
| Hobart et al. | UV/ozone activation treatment for wafer bonding | |
| JP2004079664A (ja) | エッチング装置および反応生成物の除去方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20051219 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20051219 |
|
| RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20060112 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070410 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070911 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070927 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20080115 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20080128 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110215 Year of fee payment: 3 |
|
| R151 | Written notification of patent or utility model registration |
Ref document number: 4078989 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110215 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110215 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120215 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130215 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130215 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140215 Year of fee payment: 6 |
|
| LAPS | Cancellation because of no payment of annual fees |