JP4073337B2 - 感光性樹脂組成物 - Google Patents

感光性樹脂組成物 Download PDF

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Publication number
JP4073337B2
JP4073337B2 JP2003049203A JP2003049203A JP4073337B2 JP 4073337 B2 JP4073337 B2 JP 4073337B2 JP 2003049203 A JP2003049203 A JP 2003049203A JP 2003049203 A JP2003049203 A JP 2003049203A JP 4073337 B2 JP4073337 B2 JP 4073337B2
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Japan
Prior art keywords
group
atom
represented
general formula
acid
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Expired - Fee Related
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JP2003049203A
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English (en)
Japanese (ja)
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JP2004004576A5 (enExample
JP2004004576A (ja
Inventor
佐々木知也
一良 水谷
慎一 漢那
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP2003049203A priority Critical patent/JP4073337B2/ja
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Publication of JP2004004576A5 publication Critical patent/JP2004004576A5/ja
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Publication of JP4073337B2 publication Critical patent/JP4073337B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2003049203A 2002-02-26 2003-02-26 感光性樹脂組成物 Expired - Fee Related JP4073337B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003049203A JP4073337B2 (ja) 2002-02-26 2003-02-26 感光性樹脂組成物

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002050031 2002-02-26
JP2003049203A JP4073337B2 (ja) 2002-02-26 2003-02-26 感光性樹脂組成物

Publications (3)

Publication Number Publication Date
JP2004004576A JP2004004576A (ja) 2004-01-08
JP2004004576A5 JP2004004576A5 (enExample) 2005-12-02
JP4073337B2 true JP4073337B2 (ja) 2008-04-09

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ID=30445731

Family Applications (1)

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JP2003049203A Expired - Fee Related JP4073337B2 (ja) 2002-02-26 2003-02-26 感光性樹脂組成物

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JP (1) JP4073337B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4079893B2 (ja) * 2004-02-20 2008-04-23 セントラル硝子株式会社 含フッ素環状化合物、含フッ素高分子化合物、それを用いたレジスト材料及びパターン形成方法
JP4551701B2 (ja) * 2004-06-14 2010-09-29 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
JP4551704B2 (ja) * 2004-07-08 2010-09-29 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
JP4551706B2 (ja) * 2004-07-16 2010-09-29 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
CN102333797B (zh) * 2009-02-23 2014-08-13 Jsr株式会社 化合物、含氟原子聚合物和放射线敏感性树脂组合物
JP6225044B2 (ja) * 2014-02-21 2017-11-01 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、レジスト塗布マスクブランクス、レジストパターン形成方法、及び、フォトマスク

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JP2004004576A (ja) 2004-01-08

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