JP4068868B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4068868B2
JP4068868B2 JP2002094351A JP2002094351A JP4068868B2 JP 4068868 B2 JP4068868 B2 JP 4068868B2 JP 2002094351 A JP2002094351 A JP 2002094351A JP 2002094351 A JP2002094351 A JP 2002094351A JP 4068868 B2 JP4068868 B2 JP 4068868B2
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JP
Japan
Prior art keywords
insulating film
wiring
film
wirings
semiconductor device
Prior art date
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Expired - Fee Related
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JP2002094351A
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English (en)
Japanese (ja)
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JP2003297918A5 (https=
JP2003297918A (ja
Inventor
純司 野口
剛 藤原
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Renesas Technology Corp
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Renesas Technology Corp
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Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2002094351A priority Critical patent/JP4068868B2/ja
Priority to US10/387,504 priority patent/US7042095B2/en
Priority to TW092106945A priority patent/TW200404353A/zh
Priority to KR10-2003-0019462A priority patent/KR20030078750A/ko
Publication of JP2003297918A publication Critical patent/JP2003297918A/ja
Publication of JP2003297918A5 publication Critical patent/JP2003297918A5/ja
Application granted granted Critical
Publication of JP4068868B2 publication Critical patent/JP4068868B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/087—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving multiple stacked pre-patterned masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/063—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/072—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/086—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving buried masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4421—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/46—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2002094351A 2002-03-29 2002-03-29 半導体装置の製造方法 Expired - Fee Related JP4068868B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002094351A JP4068868B2 (ja) 2002-03-29 2002-03-29 半導体装置の製造方法
US10/387,504 US7042095B2 (en) 2002-03-29 2003-03-14 Semiconductor device including an interconnect having copper as a main component
TW092106945A TW200404353A (en) 2002-03-29 2003-03-27 A semiconductor device and a method of manufacturing the same
KR10-2003-0019462A KR20030078750A (ko) 2002-03-29 2003-03-28 반도체 장치 및 그 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002094351A JP4068868B2 (ja) 2002-03-29 2002-03-29 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2003297918A JP2003297918A (ja) 2003-10-17
JP2003297918A5 JP2003297918A5 (https=) 2005-04-14
JP4068868B2 true JP4068868B2 (ja) 2008-03-26

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ID=28449690

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Application Number Title Priority Date Filing Date
JP2002094351A Expired - Fee Related JP4068868B2 (ja) 2002-03-29 2002-03-29 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP4068868B2 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100352036C (zh) 2002-10-17 2007-11-28 株式会社瑞萨科技 半导体器件及其制造方法
JP4454242B2 (ja) 2003-03-25 2010-04-21 株式会社ルネサステクノロジ 半導体装置およびその製造方法
JP4619705B2 (ja) * 2004-01-15 2011-01-26 株式会社東芝 半導体装置
JP2005217371A (ja) * 2004-02-02 2005-08-11 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP4401874B2 (ja) 2004-06-21 2010-01-20 株式会社ルネサステクノロジ 半導体装置
JP4956919B2 (ja) 2005-06-08 2012-06-20 株式会社日立製作所 半導体装置およびその製造方法
JP4334589B2 (ja) 2006-12-06 2009-09-30 株式会社東芝 半導体装置、およびその製造方法
JP5334434B2 (ja) * 2007-06-04 2013-11-06 パナソニック株式会社 半導体装置の製造方法
US7879683B2 (en) * 2007-10-09 2011-02-01 Applied Materials, Inc. Methods and apparatus of creating airgap in dielectric layers for the reduction of RC delay
JP5097501B2 (ja) 2007-10-18 2012-12-12 株式会社日立製作所 半導体集積回路装置の製造方法
CN101419933B (zh) * 2007-10-24 2010-12-15 中芯国际集成电路制造(上海)有限公司 一种可避免产生突起的保护层制作方法
JP4675393B2 (ja) * 2008-05-12 2011-04-20 パナソニック株式会社 半導体装置および半導体装置の製造方法
JP5396065B2 (ja) 2008-10-28 2014-01-22 株式会社日立製作所 半導体装置の製造方法
KR20120030782A (ko) 2010-09-20 2012-03-29 삼성전자주식회사 저유전 물질을 이용한 쓰루 실리콘 비아(ｔｓｖ) 형성방법
JP5932079B2 (ja) * 2015-02-26 2016-06-08 ルネサスエレクトロニクス株式会社 半導体装置
KR102606765B1 (ko) * 2018-02-07 2023-11-27 삼성전자주식회사 비아 플러그를 갖는 반도체 소자 및 그 형성 방법
JP7599396B2 (ja) * 2021-09-06 2024-12-13 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN119383953B (zh) * 2023-07-21 2025-09-26 长鑫科技集团股份有限公司 一种半导体器件及其制造方法

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