JP4068868B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4068868B2
JP4068868B2 JP2002094351A JP2002094351A JP4068868B2 JP 4068868 B2 JP4068868 B2 JP 4068868B2 JP 2002094351 A JP2002094351 A JP 2002094351A JP 2002094351 A JP2002094351 A JP 2002094351A JP 4068868 B2 JP4068868 B2 JP 4068868B2
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JP
Japan
Prior art keywords
insulating film
wiring
film
wirings
semiconductor device
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Expired - Fee Related
Application number
JP2002094351A
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English (en)
Japanese (ja)
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JP2003297918A (ja
JP2003297918A5 (enExample
Inventor
純司 野口
剛 藤原
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Renesas Technology Corp
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Renesas Technology Corp
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Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2002094351A priority Critical patent/JP4068868B2/ja
Priority to US10/387,504 priority patent/US7042095B2/en
Priority to TW092106945A priority patent/TW200404353A/zh
Priority to KR10-2003-0019462A priority patent/KR20030078750A/ko
Publication of JP2003297918A publication Critical patent/JP2003297918A/ja
Publication of JP2003297918A5 publication Critical patent/JP2003297918A5/ja
Application granted granted Critical
Publication of JP4068868B2 publication Critical patent/JP4068868B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76811—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving multiple stacked pre-patterned masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/7681—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving one or more buried masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H01L23/53295—Stacked insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2002094351A 2002-03-29 2002-03-29 半導体装置の製造方法 Expired - Fee Related JP4068868B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002094351A JP4068868B2 (ja) 2002-03-29 2002-03-29 半導体装置の製造方法
US10/387,504 US7042095B2 (en) 2002-03-29 2003-03-14 Semiconductor device including an interconnect having copper as a main component
TW092106945A TW200404353A (en) 2002-03-29 2003-03-27 A semiconductor device and a method of manufacturing the same
KR10-2003-0019462A KR20030078750A (ko) 2002-03-29 2003-03-28 반도체 장치 및 그 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002094351A JP4068868B2 (ja) 2002-03-29 2002-03-29 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2003297918A JP2003297918A (ja) 2003-10-17
JP2003297918A5 JP2003297918A5 (enExample) 2005-04-14
JP4068868B2 true JP4068868B2 (ja) 2008-03-26

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JP2002094351A Expired - Fee Related JP4068868B2 (ja) 2002-03-29 2002-03-29 半導体装置の製造方法

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JP (1) JP4068868B2 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100352036C (zh) 2002-10-17 2007-11-28 株式会社瑞萨科技 半导体器件及其制造方法
JP4454242B2 (ja) 2003-03-25 2010-04-21 株式会社ルネサステクノロジ 半導体装置およびその製造方法
JP4619705B2 (ja) * 2004-01-15 2011-01-26 株式会社東芝 半導体装置
JP2005217371A (ja) * 2004-02-02 2005-08-11 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP4401874B2 (ja) 2004-06-21 2010-01-20 株式会社ルネサステクノロジ 半導体装置
JP4956919B2 (ja) 2005-06-08 2012-06-20 株式会社日立製作所 半導体装置およびその製造方法
JP4334589B2 (ja) 2006-12-06 2009-09-30 株式会社東芝 半導体装置、およびその製造方法
JP5334434B2 (ja) * 2007-06-04 2013-11-06 パナソニック株式会社 半導体装置の製造方法
US7879683B2 (en) * 2007-10-09 2011-02-01 Applied Materials, Inc. Methods and apparatus of creating airgap in dielectric layers for the reduction of RC delay
JP5097501B2 (ja) 2007-10-18 2012-12-12 株式会社日立製作所 半導体集積回路装置の製造方法
CN101419933B (zh) * 2007-10-24 2010-12-15 中芯国际集成电路制造(上海)有限公司 一种可避免产生突起的保护层制作方法
JP4675393B2 (ja) * 2008-05-12 2011-04-20 パナソニック株式会社 半導体装置および半導体装置の製造方法
JP5396065B2 (ja) 2008-10-28 2014-01-22 株式会社日立製作所 半導体装置の製造方法
KR20120030782A (ko) 2010-09-20 2012-03-29 삼성전자주식회사 저유전 물질을 이용한 쓰루 실리콘 비아(ｔｓｖ) 형성방법
JP5932079B2 (ja) * 2015-02-26 2016-06-08 ルネサスエレクトロニクス株式会社 半導体装置
KR102606765B1 (ko) * 2018-02-07 2023-11-27 삼성전자주식회사 비아 플러그를 갖는 반도체 소자 및 그 형성 방법
JP7599396B2 (ja) * 2021-09-06 2024-12-13 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN119383953B (zh) * 2023-07-21 2025-09-26 长鑫科技集团股份有限公司 一种半导体器件及其制造方法

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