JP4068813B2 - 薄膜半導体装置の製造方法 - Google Patents

薄膜半導体装置の製造方法 Download PDF

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Publication number
JP4068813B2
JP4068813B2 JP2001108056A JP2001108056A JP4068813B2 JP 4068813 B2 JP4068813 B2 JP 4068813B2 JP 2001108056 A JP2001108056 A JP 2001108056A JP 2001108056 A JP2001108056 A JP 2001108056A JP 4068813 B2 JP4068813 B2 JP 4068813B2
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Japan
Prior art keywords
laser beam
pulse
semiconductor film
pulse energy
film
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Expired - Fee Related
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JP2001108056A
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Japanese (ja)
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JP2002305145A (ja
JP2002305145A5 (enExample
Inventor
安 広島
哲也 小川
秀忠 時岡
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Seiko Epson Corp
Mitsubishi Electric Corp
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Seiko Epson Corp
Mitsubishi Electric Corp
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Priority to JP2001108056A priority Critical patent/JP4068813B2/ja
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Publication of JP2002305145A5 publication Critical patent/JP2002305145A5/ja
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2001108056A 2001-04-06 2001-04-06 薄膜半導体装置の製造方法 Expired - Fee Related JP4068813B2 (ja)

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JP2001108056A JP4068813B2 (ja) 2001-04-06 2001-04-06 薄膜半導体装置の製造方法

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Application Number Priority Date Filing Date Title
JP2001108056A JP4068813B2 (ja) 2001-04-06 2001-04-06 薄膜半導体装置の製造方法

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JP2002305145A JP2002305145A (ja) 2002-10-18
JP2002305145A5 JP2002305145A5 (enExample) 2005-03-17
JP4068813B2 true JP4068813B2 (ja) 2008-03-26

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JP2001108056A Expired - Fee Related JP4068813B2 (ja) 2001-04-06 2001-04-06 薄膜半導体装置の製造方法

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7148159B2 (en) * 2003-09-29 2006-12-12 Ultratech, Inc. Laser thermal annealing of lightly doped silicon substrates
JP2007158372A (ja) * 2007-02-06 2007-06-21 Advanced Display Inc 半導体装置の製造方法および製造装置
JP2012015445A (ja) 2010-07-05 2012-01-19 Japan Steel Works Ltd:The レーザアニール処理装置およびレーザアニール処理方法
JP2014220331A (ja) * 2013-05-07 2014-11-20 株式会社リコー 電磁波照射装置

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