JP4061326B2 - 広いダイナミックレンジを有する画像受光デバイス - Google Patents
広いダイナミックレンジを有する画像受光デバイス Download PDFInfo
- Publication number
- JP4061326B2 JP4061326B2 JP2005518753A JP2005518753A JP4061326B2 JP 4061326 B2 JP4061326 B2 JP 4061326B2 JP 2005518753 A JP2005518753 A JP 2005518753A JP 2005518753 A JP2005518753 A JP 2005518753A JP 4061326 B2 JP4061326 B2 JP 4061326B2
- Authority
- JP
- Japan
- Prior art keywords
- control signal
- transistor
- node
- floating diffusion
- predetermined
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003990 capacitor Substances 0.000 claims description 40
- 238000009792 diffusion process Methods 0.000 claims description 39
- 230000004044 response Effects 0.000 claims description 13
- 230000005540 biological transmission Effects 0.000 claims description 12
- 230000009849 deactivation Effects 0.000 claims description 10
- 230000000694 effects Effects 0.000 claims description 8
- 230000004913 activation Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 13
- 101000597193 Homo sapiens Telethonin Proteins 0.000 description 9
- 102100035155 Telethonin Human genes 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 8
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
前記フォトダイオードで発生した前記信号電荷を受け取る容量ノードと、
所定のリセット制御信号の活性化に応答して、前記容量ノードをリセットするリセットトランジスタと、
所定の駆動トランジスタをオンオフする浮遊拡散ノードと、
前記浮遊拡散ノードの電圧レベルによって制御される前記駆動トランジスタと、
所定の行選択信号に応答して、前記駆動トランジスタによって伝送される電圧を対応するデータ線に伝送する選択トランジスタと、
前記容量ノードおよび前記浮遊拡散ノードにそれぞれ接続された第1および第2のソース/ドレイン端子を有し、所定のキャパシタ制御信号の活性化に応答してオンオフされるキャパシタトランジスタと、を含み、
前記キャパシタ制御信号は、前記リセット制御信号の非活性化直前に非活性化され、前記リセット制御信号の非活性化直後に活性化されることを特徴とする、CMOSアクティブピクセルを提供する。
Claims (4)
- 受光した光子によって信号電荷を生成するフォトダイオードと、
前記フォトダイオードで発生した前記信号電荷を受け取る容量ノードと、
所定のリセット制御信号の活性化に応答して、前記容量ノードをリセットするリセットトランジスタと、
所定の駆動トランジスタをオンオフする浮遊拡散ノードと、
前記浮遊拡散ノードの電圧レベルによって制御される前記駆動トランジスタと、
所定の行選択信号に応答して、前記駆動トランジスタによって伝送される電圧を対応するデータ線に伝送する選択トランジスタと、
前記容量ノードおよび前記浮遊拡散ノードにそれぞれ接続された第1および第2のソース/ドレイン端子を有し、所定のキャパシタ制御信号の活性に応答してオンオフされるキャパシタトランジスタと、を含み、
前記キャパシタ制御信号は、前記リセット制御信号の非活性化直前に非活性化され、前記リセット制御信号の非活性化直後に活性化されることを特徴とする、CMOSアクティブピクセル。 - 前記フォトダイオードは、PIN(P型半導体−真性半導体−N型半導体)構造を有することを特徴とする、請求項1に記載のCMOSアクティブピクセル。
- 受光した光子によって信号電荷を生成するフォトダイオードと、
前記フォトダイオードで発生した信号電荷を受け取る容量ノードと、
所定のリセット制御信号の活性化に応答して、前記容量ノードをリセットするリセットトランジスタと、
所定の駆動トランジスタをオンオフする浮遊拡散ノードと、
前記浮遊拡散ノードの電圧レベルによって制御される前記駆動トランジスタと、
所定の行選択信号に応答して、前記駆動トランジスタによって伝送される電圧を対応するデータ線に伝送する選択トランジスタと、
一方の端子が前記容量ノードおよび前記浮遊拡散ノードに共通接続され、他方の端子が所定のキャパシタ制御信号によって電気的に接続されるキャパシタと、を含み、
前記キャパシタ制御信号は、前記リセット制御信号の非活性化直前に非活性化され、前記リセット制御信号の非活性化直後に活性化されることを特徴とする、CMOSアクティブピクセル。 - 受光した光子によって信号電荷を生成するフォトダイオードと、
所定の伝送制御信号の活性化に応答して、前記信号電荷を所定の容量ノードに提供する伝送トランジスタと、
前記伝送トランジスタによって伝送される前記信号電荷を受け取る容量ノードと、
所定のリセット制御信号の活性化に応答して、前記容量ノードをリセットするリセットトランジスタと、
所定の駆動トランジスタをオンオフし、前記容量ノードと電気的に接続される浮遊拡散ノードと、
前記浮遊拡散ノードの電圧レベルによって制御される前記駆動トランジスタと、
所定の行選択信号に応答して、前記駆動トランジスタによって伝送される電圧を対応するデータ線に伝送する選択トランジスタと、を含み、
前記伝送制御信号は、前記リセット制御信号の非活性化直前に非活性化され、前記リセット制御信号の非活性化直後に活性化されることを特徴とする、CMOSアクティブピクセル。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-0007743A KR100484278B1 (ko) | 2003-02-07 | 2003-02-07 | 넓은 동작 범위를 갖는 광 화상 수신용 디바이스 |
PCT/KR2004/000237 WO2004071079A1 (en) | 2003-02-07 | 2004-02-07 | Optical image receiving device having wide dynamic range |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006514446A JP2006514446A (ja) | 2006-04-27 |
JP4061326B2 true JP4061326B2 (ja) | 2008-03-19 |
Family
ID=36167031
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005518753A Expired - Lifetime JP4061326B2 (ja) | 2003-02-07 | 2004-02-07 | 広いダイナミックレンジを有する画像受光デバイス |
Country Status (6)
Country | Link |
---|---|
US (1) | US7733400B2 (ja) |
EP (1) | EP1593260A1 (ja) |
JP (1) | JP4061326B2 (ja) |
KR (1) | KR100484278B1 (ja) |
CN (1) | CN100372370C (ja) |
WO (1) | WO2004071079A1 (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3996618B1 (ja) * | 2006-05-11 | 2007-10-24 | 総吉 廣津 | 半導体撮像素子 |
US7791664B1 (en) * | 2006-07-20 | 2010-09-07 | Advasense Technologies Ltd. | Methods for reading a pixel and for writing to a pixel and a device having pixel reading capabilities and pixel writing capabilities |
JP5157259B2 (ja) * | 2007-05-29 | 2013-03-06 | ソニー株式会社 | 固体撮像素子及び撮像装置 |
US7995124B2 (en) * | 2007-09-14 | 2011-08-09 | Omnivision Technologies, Inc. | Image sensor apparatus and method for improved dynamic range with multiple readout circuit paths |
US8077237B2 (en) | 2007-10-16 | 2011-12-13 | Aptina Imaging Corporation | Method and apparatus for controlling dual conversion gain signal in imaging devices |
US8338248B2 (en) | 2008-12-25 | 2012-12-25 | National University Corporation Shizuoka University | Semiconductor element and solid-state imaging device |
US9231006B2 (en) * | 2009-10-05 | 2016-01-05 | National University Corporation Shizuoka University | Semiconductor element and solid-state imaging device |
JP5422362B2 (ja) | 2009-12-15 | 2014-02-19 | 株式会社東芝 | 固体撮像装置 |
GB201102478D0 (en) | 2011-02-11 | 2011-03-30 | Isdi Ltd | Radiation detector and method |
CN102196201B (zh) * | 2011-06-23 | 2013-11-27 | 格科微电子(上海)有限公司 | 图像传感器的信号读出电路、模块及方法 |
US9059065B2 (en) * | 2012-03-19 | 2015-06-16 | National Institute Of Advanced Industrial Science And Technology | Method of varying gain of amplifying photoelectric conversion device and variable gain photoelectric conversion device |
CN103779365B (zh) | 2012-10-19 | 2016-06-22 | 比亚迪股份有限公司 | 宽动态范围像素单元、其制造方法及其构成的图像传感器 |
US9621864B2 (en) * | 2014-01-14 | 2017-04-11 | Microsoft Technology Licensing, Llc | Spectral imaging system |
GB2525625B (en) | 2014-04-29 | 2017-05-31 | Isdi Ltd | Device and method |
CN105810765B (zh) * | 2016-03-21 | 2017-08-11 | 京东方科技集团股份有限公司 | Pin光电二极管、x射线探测像元、装置及其探测方法 |
JP6840555B2 (ja) * | 2017-01-30 | 2021-03-10 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
WO2019107083A1 (ja) * | 2017-11-30 | 2019-06-06 | パナソニックIpマネジメント株式会社 | 撮像装置 |
CN112449133B (zh) * | 2019-08-29 | 2023-04-07 | 天津大学青岛海洋技术研究院 | 一种采用像素内参数调整技术的大动态范围像素结构 |
CN112563299B (zh) * | 2020-12-10 | 2023-03-24 | 成都微光集电科技有限公司 | Cmos图像传感器及其制备方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2735632B1 (fr) * | 1995-06-14 | 1997-07-11 | Commissariat Energie Atomique | Dispositif et procede de numerisation pour detecteurs photosensibles et procede de lecture d'une matrice de detecteurs photoniques |
US6008686A (en) * | 1997-06-24 | 1999-12-28 | Advantest Corp. | Power consumption control circuit for CMOS circuit |
US6008486A (en) | 1997-12-31 | 1999-12-28 | Gentex Corporation | Wide dynamic range optical sensor |
US6512544B1 (en) * | 1998-06-17 | 2003-01-28 | Foveon, Inc. | Storage pixel sensor and array with compression |
DE69824398T2 (de) * | 1998-06-26 | 2005-08-04 | Agilent Technologies Inc., A Delaware Corp., Palo Alto | Photodiodenanordnung |
EP0999698B1 (en) | 1998-11-02 | 2013-06-19 | Canon Kabushiki Kaisha | Solid-state image pickup device and method of resetting the same |
JP3833027B2 (ja) | 1998-11-02 | 2006-10-11 | キヤノン株式会社 | 固体撮像装置及び画像入力装置 |
US6339248B1 (en) * | 1999-11-15 | 2002-01-15 | Omnivision Technologies, Inc. | Optimized floating P+ region photodiode for a CMOS image sensor |
US7009648B2 (en) * | 2000-02-22 | 2006-03-07 | Asulab S.A. | Method for operating a CMOS image sensor |
JP2001257943A (ja) | 2000-03-13 | 2001-09-21 | Victor Co Of Japan Ltd | 固体撮像装置の電子シャッター駆動方法および固体撮像装置 |
EP1265291A1 (fr) * | 2001-06-08 | 2002-12-11 | EM Microelectronic-Marin SA | Capteur d'image CMOS et procédé permettant d'opérer un capteur d'image CMOS avec une dynamique accrue |
US7443427B2 (en) * | 2002-08-23 | 2008-10-28 | Micron Technology, Inc. | Wide dynamic range linear-and-log active pixel |
US20040036784A1 (en) * | 2002-08-23 | 2004-02-26 | Bock Nikolai E. | High dynamic range pixel with gain and true shutter capability |
JP4117540B2 (ja) | 2002-10-17 | 2008-07-16 | ソニー株式会社 | 固体撮像素子の制御方法 |
-
2003
- 2003-02-07 KR KR10-2003-0007743A patent/KR100484278B1/ko not_active IP Right Cessation
-
2004
- 2004-02-07 WO PCT/KR2004/000237 patent/WO2004071079A1/en active Application Filing
- 2004-02-07 US US10/544,774 patent/US7733400B2/en active Active
- 2004-02-07 JP JP2005518753A patent/JP4061326B2/ja not_active Expired - Lifetime
- 2004-02-07 EP EP04709153A patent/EP1593260A1/en not_active Withdrawn
- 2004-02-07 CN CNB2004800037602A patent/CN100372370C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO2004071079A1 (en) | 2004-08-19 |
KR100484278B1 (ko) | 2005-04-20 |
CN100372370C (zh) | 2008-02-27 |
US7733400B2 (en) | 2010-06-08 |
KR20040071841A (ko) | 2004-08-16 |
JP2006514446A (ja) | 2006-04-27 |
CN1748412A (zh) | 2006-03-15 |
US20060181626A1 (en) | 2006-08-17 |
EP1593260A1 (en) | 2005-11-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4061326B2 (ja) | 広いダイナミックレンジを有する画像受光デバイス | |
US10567691B2 (en) | Solid-state imaging device, method for driving solid-state imaging device, and electronic apparatus | |
KR100279295B1 (ko) | 액티브 픽셀 센서 | |
US5903021A (en) | Partially pinned photodiode for solid state image sensors | |
US6528833B2 (en) | CMOS active pixel for improving sensitivity | |
US8766157B2 (en) | High dynamic range CMOS pixel and method of operating same | |
JP4445390B2 (ja) | 低暗電流ホトダイオードを具える画素センサ | |
US7186964B2 (en) | Dark current reduction circuitry for CMOS active pixel sensors | |
US20060097296A1 (en) | CMOS image sensor and method of operating the same | |
JP2002217397A (ja) | 固体撮像装置及びその駆動方法 | |
JP2009505438A (ja) | 多方向に共有される画素上の高ダイナミックレンジ/耐ブルーミング共通ゲート | |
KR20080038446A (ko) | Cmos 이미저에서의 효과적인 전하 전송 | |
JP5480186B2 (ja) | パラメトリックリセットを用いる、低いリセットノイズを有し、低い暗電流を生成するcmosイメージセンサーのための3tピクセル | |
JP2004221578A (ja) | Cmosイメージセンサ | |
EP1223746B1 (en) | Active pixel image sensor with improved linearity | |
US20080315263A1 (en) | Imager pixel structure and circuit | |
JP2001094878A (ja) | 固体撮像装置 | |
KR100460760B1 (ko) | 암전류 특성과 필팩터를 향상시킨 시모스 이미지센서의단위화소 | |
JP4345145B2 (ja) | 固体撮像装置 | |
KR100707074B1 (ko) | 센싱 감도를 개선하기 위한 이미지 센서의 단위 화소 | |
KR100864180B1 (ko) | 씨모스 이미지 센서 및 이미지 데이타 처리방법 | |
KR20010114031A (ko) | 감도를 향상시키는 씨모스 액티브 픽셀 | |
JP2006147795A (ja) | 固体撮像装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20060524 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070719 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20070718 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070731 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071026 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20071204 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20071221 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101228 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4061326 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111228 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111228 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121228 Year of fee payment: 5 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131228 Year of fee payment: 6 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |