JP4056345B2 - ポジ型レジスト組成物 - Google Patents

ポジ型レジスト組成物 Download PDF

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Publication number
JP4056345B2
JP4056345B2 JP2002285486A JP2002285486A JP4056345B2 JP 4056345 B2 JP4056345 B2 JP 4056345B2 JP 2002285486 A JP2002285486 A JP 2002285486A JP 2002285486 A JP2002285486 A JP 2002285486A JP 4056345 B2 JP4056345 B2 JP 4056345B2
Authority
JP
Japan
Prior art keywords
group
hydrogen atom
acid
atom
fluorine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002285486A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004125835A5 (enrdf_load_stackoverflow
JP2004125835A (ja
Inventor
一良 水谷
知也 佐々木
慎一 漢那
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2002285486A priority Critical patent/JP4056345B2/ja
Priority to KR1020030034881A priority patent/KR100955454B1/ko
Priority to US10/448,041 priority patent/US6939662B2/en
Priority to EP10188665A priority patent/EP2278397A3/en
Priority to EP10188667.9A priority patent/EP2278399B1/en
Priority to EP10188666A priority patent/EP2278398A3/en
Priority to EP10188668A priority patent/EP2278400A3/en
Priority to EP03012142A priority patent/EP1367440B1/en
Priority to AT03012142T priority patent/ATE525676T1/de
Publication of JP2004125835A publication Critical patent/JP2004125835A/ja
Publication of JP2004125835A5 publication Critical patent/JP2004125835A5/ja
Application granted granted Critical
Publication of JP4056345B2 publication Critical patent/JP4056345B2/ja
Priority to KR1020090108795A priority patent/KR100947853B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2002285486A 2002-05-31 2002-09-30 ポジ型レジスト組成物 Expired - Fee Related JP4056345B2 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP2002285486A JP4056345B2 (ja) 2002-09-30 2002-09-30 ポジ型レジスト組成物
US10/448,041 US6939662B2 (en) 2002-05-31 2003-05-30 Positive-working resist composition
KR1020030034881A KR100955454B1 (ko) 2002-05-31 2003-05-30 포지티브 레지스트 조성물
EP10188667.9A EP2278399B1 (en) 2002-05-31 2003-06-02 Positive-working resist composition
EP10188666A EP2278398A3 (en) 2002-05-31 2003-06-02 Positive-working resist composition
EP10188668A EP2278400A3 (en) 2002-05-31 2003-06-02 Positive-working resist composition
EP10188665A EP2278397A3 (en) 2002-05-31 2003-06-02 Positive-working resist composition
EP03012142A EP1367440B1 (en) 2002-05-31 2003-06-02 Positive-working resist composition
AT03012142T ATE525676T1 (de) 2002-05-31 2003-06-02 Positiv arbeitende resistzusammensetzung
KR1020090108795A KR100947853B1 (ko) 2002-05-31 2009-11-11 포지티브 레지스트 조성물 및 이를 이용한 패턴형성방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002285486A JP4056345B2 (ja) 2002-09-30 2002-09-30 ポジ型レジスト組成物

Publications (3)

Publication Number Publication Date
JP2004125835A JP2004125835A (ja) 2004-04-22
JP2004125835A5 JP2004125835A5 (enrdf_load_stackoverflow) 2005-09-22
JP4056345B2 true JP4056345B2 (ja) 2008-03-05

Family

ID=32278777

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002285486A Expired - Fee Related JP4056345B2 (ja) 2002-05-31 2002-09-30 ポジ型レジスト組成物

Country Status (1)

Country Link
JP (1) JP4056345B2 (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005081062A1 (ja) 2004-02-20 2005-09-01 Tokyo Ohka Kogyo Co., Ltd. パターン形成材料用基材、ポジ型レジスト組成物およびレジストパターン形成方法
JP3946715B2 (ja) 2004-07-28 2007-07-18 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP4468119B2 (ja) 2004-09-08 2010-05-26 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP4837323B2 (ja) 2004-10-29 2011-12-14 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法および化合物
US7981588B2 (en) 2005-02-02 2011-07-19 Tokyo Ohka Kogyo Co., Ltd. Negative resist composition and method of forming resist pattern
JP5138157B2 (ja) 2005-05-17 2013-02-06 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP4813103B2 (ja) 2005-06-17 2011-11-09 東京応化工業株式会社 化合物、ポジ型レジスト組成物およびレジストパターン形成方法
JP4732038B2 (ja) 2005-07-05 2011-07-27 東京応化工業株式会社 化合物、ポジ型レジスト組成物およびレジストパターン形成方法
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9581908B2 (en) * 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
JP6065942B2 (ja) * 2015-06-12 2017-01-25 信越化学工業株式会社 高分子化合物

Also Published As

Publication number Publication date
JP2004125835A (ja) 2004-04-22

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