JP4056132B2 - マグネトロンスパッタ方法及び装置 - Google Patents

マグネトロンスパッタ方法及び装置 Download PDF

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Publication number
JP4056132B2
JP4056132B2 JP18841998A JP18841998A JP4056132B2 JP 4056132 B2 JP4056132 B2 JP 4056132B2 JP 18841998 A JP18841998 A JP 18841998A JP 18841998 A JP18841998 A JP 18841998A JP 4056132 B2 JP4056132 B2 JP 4056132B2
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Japan
Prior art keywords
magnet
substrate
target
disposed
magnetron
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Expired - Fee Related
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JP18841998A
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Japanese (ja)
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JP2000017435A5 (enExample
JP2000017435A (ja
Inventor
昌裕 山本
政秀 横山
敏行 末光
達之 森
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP18841998A priority Critical patent/JP4056132B2/ja
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Publication of JP2000017435A5 publication Critical patent/JP2000017435A5/ja
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  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP18841998A 1998-07-03 1998-07-03 マグネトロンスパッタ方法及び装置 Expired - Fee Related JP4056132B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18841998A JP4056132B2 (ja) 1998-07-03 1998-07-03 マグネトロンスパッタ方法及び装置

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Application Number Priority Date Filing Date Title
JP18841998A JP4056132B2 (ja) 1998-07-03 1998-07-03 マグネトロンスパッタ方法及び装置

Publications (3)

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JP2000017435A JP2000017435A (ja) 2000-01-18
JP2000017435A5 JP2000017435A5 (enExample) 2005-10-20
JP4056132B2 true JP4056132B2 (ja) 2008-03-05

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JP18841998A Expired - Fee Related JP4056132B2 (ja) 1998-07-03 1998-07-03 マグネトロンスパッタ方法及び装置

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011086390A (ja) * 2009-10-13 2011-04-28 Kawamura Sangyo Kk プラズマ処理装置
US11476099B2 (en) * 2018-02-13 2022-10-18 Evatec Ag Methods of and apparatus for magnetron sputtering
GB201815216D0 (en) * 2018-09-18 2018-10-31 Spts Technologies Ltd Apparatus and a method of controlling thickness variation in a material layer formed using physical vapour deposition

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Publication number Publication date
JP2000017435A (ja) 2000-01-18

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