JP4054525B2 - 間接加熱される陰極を有するイオン源の出力制御装置 - Google Patents

間接加熱される陰極を有するイオン源の出力制御装置 Download PDF

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Publication number
JP4054525B2
JP4054525B2 JP2000503540A JP2000503540A JP4054525B2 JP 4054525 B2 JP4054525 B2 JP 4054525B2 JP 2000503540 A JP2000503540 A JP 2000503540A JP 2000503540 A JP2000503540 A JP 2000503540A JP 4054525 B2 JP4054525 B2 JP 4054525B2
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Japan
Prior art keywords
filament
power supply
bias
supply unit
power
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Expired - Lifetime
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JP2000503540A
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Japanese (ja)
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JP2001510928A (ja
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ステファン ウェルズ，
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
JP2000503540A 1997-07-16 1998-07-14 間接加熱される陰極を有するイオン源の出力制御装置 Expired - Lifetime JP4054525B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9714990.0 1997-07-16
GB9714990A GB2327513B (en) 1997-07-16 1997-07-16 Power control apparatus for an ion source having an indirectly heated cathode
PCT/GB1998/002075 WO1999004409A1 (en) 1997-07-16 1998-07-14 Power control apparatus for an ion source having an indirectly heated cathode

Publications (2)

Publication Number Publication Date
JP2001510928A JP2001510928A (ja) 2001-08-07
JP4054525B2 true JP4054525B2 (ja) 2008-02-27

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ID=10815952

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Application Number Title Priority Date Filing Date
JP2000503540A Expired - Lifetime JP4054525B2 (ja) 1997-07-16 1998-07-14 間接加熱される陰極を有するイオン源の出力制御装置

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Country Link
EP (1) EP0995215A1 (de)
JP (1) JP4054525B2 (de)
GB (1) GB2327513B (de)
WO (1) WO1999004409A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7276847B2 (en) 2000-05-17 2007-10-02 Varian Semiconductor Equipment Associates, Inc. Cathode assembly for indirectly heated cathode ion source
US6777686B2 (en) * 2000-05-17 2004-08-17 Varian Semiconductor Equipment Associates, Inc. Control system for indirectly heated cathode ion source
US7138768B2 (en) 2002-05-23 2006-11-21 Varian Semiconductor Equipment Associates, Inc. Indirectly heated cathode ion source

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2325786C2 (de) * 1973-05-22 1983-10-06 Leybold-Heraeus Gmbh, 5000 Koeln Schaltung zur Regelung der Betriebsparameter eines Elektronenstrahlerzeugers
US4506160A (en) * 1982-05-24 1985-03-19 Tokyo Shibaura Denki Kabushiki Kaisha Ion source apparatus
US4754200A (en) * 1985-09-09 1988-06-28 Applied Materials, Inc. Systems and methods for ion source control in ion implanters
KR0148385B1 (ko) * 1990-01-30 1998-10-15 이노우에 키요시 이온 발생장치
JP3368695B2 (ja) * 1994-10-05 2003-01-20 日新電機株式会社 イオン源
US5497006A (en) * 1994-11-15 1996-03-05 Eaton Corporation Ion generating source for use in an ion implanter

Also Published As

Publication number Publication date
WO1999004409A1 (en) 1999-01-28
EP0995215A1 (de) 2000-04-26
GB9714990D0 (en) 1997-09-24
JP2001510928A (ja) 2001-08-07
GB2327513B (en) 2001-10-24
GB2327513A (en) 1999-01-27

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