JP4047531B2 - 強誘電体メモリ装置 - Google Patents

強誘電体メモリ装置 Download PDF

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Publication number
JP4047531B2
JP4047531B2 JP2000316749A JP2000316749A JP4047531B2 JP 4047531 B2 JP4047531 B2 JP 4047531B2 JP 2000316749 A JP2000316749 A JP 2000316749A JP 2000316749 A JP2000316749 A JP 2000316749A JP 4047531 B2 JP4047531 B2 JP 4047531B2
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Japan
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cell
capacitors
ferroelectric
capacitor
memory device
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JP2000316749A
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English (en)
Japanese (ja)
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JP2002124081A5 (https=
JP2002124081A (ja
Inventor
義昭 竹内
須弥子 堂前
幸人 大脇
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Toshiba Corp
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Toshiba Corp
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Priority to JP2000316749A priority Critical patent/JP4047531B2/ja
Priority to US09/956,938 priority patent/US6483737B2/en
Publication of JP2002124081A publication Critical patent/JP2002124081A/ja
Publication of JP2002124081A5 publication Critical patent/JP2002124081A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
JP2000316749A 2000-10-17 2000-10-17 強誘電体メモリ装置 Expired - Fee Related JP4047531B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000316749A JP4047531B2 (ja) 2000-10-17 2000-10-17 強誘電体メモリ装置
US09/956,938 US6483737B2 (en) 2000-10-17 2001-09-21 Ferroelectric memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000316749A JP4047531B2 (ja) 2000-10-17 2000-10-17 強誘電体メモリ装置

Publications (3)

Publication Number Publication Date
JP2002124081A JP2002124081A (ja) 2002-04-26
JP2002124081A5 JP2002124081A5 (https=) 2005-06-02
JP4047531B2 true JP4047531B2 (ja) 2008-02-13

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ID=18795650

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JP2000316749A Expired - Fee Related JP4047531B2 (ja) 2000-10-17 2000-10-17 強誘電体メモリ装置

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US (1) US6483737B2 (https=)
JP (1) JP4047531B2 (https=)

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Publication number Priority date Publication date Assignee Title
JP4421009B2 (ja) * 1999-06-02 2010-02-24 株式会社東芝 強誘電体メモリ
WO2003052829A1 (fr) * 2001-12-14 2003-06-26 Hitachi, Ltd. Dispositif semi-conducteur et procede de fabrication correspondant
US6867997B2 (en) * 2002-03-27 2005-03-15 Texas Instruments Incorporated Series feram cell array
US6731529B2 (en) * 2002-06-04 2004-05-04 Infineon Technologies Aktiengesellschaft Variable capacitances for memory cells within a cell group
JP2005025878A (ja) * 2003-07-03 2005-01-27 Toshiba Corp 半導体記憶装置およびその試験方法
US7178126B2 (en) * 2004-01-21 2007-02-13 Oki Electric Industry Co., Ltd. Method of protecting a semiconductor integrated circuit from plasma damage
JP4189378B2 (ja) * 2004-12-27 2008-12-03 株式会社東芝 強誘電体メモリ
US7829875B2 (en) * 2006-03-31 2010-11-09 Sandisk 3D Llc Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuse
CN1983857A (zh) * 2006-04-05 2007-06-20 华为技术有限公司 一种天线设备的参数配置方法和装置
US9324405B2 (en) * 2010-11-30 2016-04-26 Radiant Technologies, Inc. CMOS analog memories utilizing ferroelectric capacitors
KR102398144B1 (ko) * 2014-09-26 2022-05-13 래디언트 테크놀러지즈, 인코포레이티드 강유전체 커패시터들을 이용하는 cmos 아날로그 메모리들
US10276230B2 (en) 2016-08-31 2019-04-30 Micron Technology, Inc. Memory arrays
EP3507804A4 (en) 2016-08-31 2020-07-15 Micron Technology, INC. FERROELECTRIC MEMORY CELLS
KR102171724B1 (ko) 2016-08-31 2020-10-30 마이크론 테크놀로지, 인크 메모리 셀 및 메모리 어레이
EP3507805B1 (en) 2016-08-31 2025-10-01 Micron Technology, Inc. Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory
WO2018044456A1 (en) 2016-08-31 2018-03-08 Micron Technology, Inc. Memory cells and memory arrays
KR102188490B1 (ko) 2016-08-31 2020-12-09 마이크론 테크놀로지, 인크. 강유전체 메모리를 포함하며 강유전체 메모리에 액세스하기 위한 장치 및 방법
WO2018044510A1 (en) * 2016-08-31 2018-03-08 Micron Technology, Inc. Apparatuses and methods including two transistor-one capacitor memory and for accessing same
US10355002B2 (en) * 2016-08-31 2019-07-16 Micron Technology, Inc. Memory cells, methods of forming an array of two transistor-one capacitor memory cells, and methods used in fabricating integrated circuitry
US10115438B2 (en) * 2016-08-31 2018-10-30 Micron Technology, Inc. Sense amplifier constructions
CN109155312B (zh) 2016-08-31 2023-05-02 美光科技公司 存储器单元及存储器阵列
KR102208380B1 (ko) 2016-08-31 2021-01-28 마이크론 테크놀로지, 인크 메모리 셀들 및 메모리 어레이들
WO2018132250A1 (en) 2017-01-12 2018-07-19 Micron Technology, Inc. Memory cells, arrays of two transistor-one capacitor memory cells, methods of forming an array of two transistor-one capacitor memory cells, and methods used in fabricating integrated circuitry
US10074422B1 (en) 2017-06-13 2018-09-11 Cypress Semiconductor Corporation 2T1C ferro-electric random access memory cell
US10304514B2 (en) 2017-07-05 2019-05-28 Micron Technology, Inc. Self-reference sensing for memory cells
US10867675B2 (en) 2017-07-13 2020-12-15 Micron Technology, Inc. Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells
US10163480B1 (en) * 2017-07-27 2018-12-25 Micron Technology, Inc. Periphery fill and localized capacitance
US10032496B1 (en) 2017-07-27 2018-07-24 Micron Technology, Inc. Variable filter capacitance
EP3676835A4 (en) 2017-08-29 2020-08-19 Micron Technology, Inc. MEMORY CIRCUITS
US11482529B2 (en) 2019-02-27 2022-10-25 Kepler Computing Inc. High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor
US10998025B2 (en) 2019-02-27 2021-05-04 Kepler Computing, Inc. High-density low voltage non-volatile differential memory bit-cell with shared plate-line
US10854617B2 (en) 2019-04-09 2020-12-01 Micron Technology, Inc. Integrated components which have both horizontally-oriented transistors and vertically-oriented transistors
CN111292782B (zh) * 2019-10-21 2021-11-02 北京潼荔科技有限公司 非易失性随机存取存储器及存取方法
KR102948576B1 (ko) * 2020-11-04 2026-04-03 후아웨이 테크놀러지 컴퍼니 리미티드 강유전체 메모리 및 저장 장치
US11527277B1 (en) 2021-06-04 2022-12-13 Kepler Computing Inc. High-density low voltage ferroelectric memory bit-cell
US11729991B1 (en) 2021-11-01 2023-08-15 Kepler Computing Inc. Common mode compensation for non-linear polar material based differential memory bit-cell
US11482270B1 (en) 2021-11-17 2022-10-25 Kepler Computing Inc. Pulsing scheme for a ferroelectric memory bit-cell to minimize read or write disturb effect and refresh logic
US12108609B1 (en) 2022-03-07 2024-10-01 Kepler Computing Inc. Memory bit-cell with stacked and folded planar capacitors
US20230395134A1 (en) 2022-06-03 2023-12-07 Kepler Computing Inc. Write disturb mitigation for non-linear polar material based multi-capacitor bit-cell
US12347476B1 (en) 2022-12-27 2025-07-01 Kepler Computing Inc. Apparatus and method to improve sensing noise margin in a non-linear polar material based bit-cell
US12334127B2 (en) 2023-01-30 2025-06-17 Kepler Computing Inc. Non-linear polar material based multi-capacitor high density bit-cell
WO2024220439A1 (en) * 2023-04-17 2024-10-24 Radiant Technologies, Inc. Ferroelectric latch adapted to replace a conventional latch

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US4888733A (en) 1988-09-12 1989-12-19 Ramtron Corporation Non-volatile memory cell and sensing method
US5309391A (en) * 1992-10-02 1994-05-03 National Semiconductor Corporation Symmetrical polarization enhancement in a ferroelectric memory cell
JP3766181B2 (ja) 1996-06-10 2006-04-12 株式会社東芝 半導体記憶装置とそれを搭載したシステム
JP3604524B2 (ja) * 1997-01-07 2004-12-22 東芝マイクロエレクトロニクス株式会社 不揮発性強誘電体メモリ
JPH11120797A (ja) * 1997-10-15 1999-04-30 Toshiba Microelectronics Corp 強誘電体メモリ及びそのスクリーニング方法
JP3495905B2 (ja) * 1998-02-19 2004-02-09 シャープ株式会社 半導体記憶装置
US6198652B1 (en) * 1998-04-13 2001-03-06 Kabushiki Kaisha Toshiba Non-volatile semiconductor integrated memory device

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US6483737B2 (en) 2002-11-19
US20020044477A1 (en) 2002-04-18
JP2002124081A (ja) 2002-04-26

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