JP4035457B2 - 機能デバイスの製造方法 - Google Patents

機能デバイスの製造方法 Download PDF

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Publication number
JP4035457B2
JP4035457B2 JP2003068509A JP2003068509A JP4035457B2 JP 4035457 B2 JP4035457 B2 JP 4035457B2 JP 2003068509 A JP2003068509 A JP 2003068509A JP 2003068509 A JP2003068509 A JP 2003068509A JP 4035457 B2 JP4035457 B2 JP 4035457B2
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JP
Japan
Prior art keywords
silicon
aluminum
columnar
substrate
layer
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2003068509A
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English (en)
Japanese (ja)
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JP2004237429A5 (enExample
JP2004237429A (ja
Inventor
伸浩 安居
和彦 福谷
透 田
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2003068509A priority Critical patent/JP4035457B2/ja
Publication of JP2004237429A publication Critical patent/JP2004237429A/ja
Publication of JP2004237429A5 publication Critical patent/JP2004237429A5/ja
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Publication of JP4035457B2 publication Critical patent/JP4035457B2/ja
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  • Physical Vapour Deposition (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Magnetic Record Carriers (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Thin Magnetic Films (AREA)
  • Semiconductor Memories (AREA)
  • Micromachines (AREA)
JP2003068509A 2002-03-15 2003-03-13 機能デバイスの製造方法 Expired - Fee Related JP4035457B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003068509A JP4035457B2 (ja) 2002-03-15 2003-03-13 機能デバイスの製造方法

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2002073111 2002-03-15
JP2002073112 2002-03-15
JP2002073113 2002-03-15
JP2002096422 2002-03-29
JP2002153687 2002-05-28
JP2002363163 2002-12-13
JP2003068509A JP4035457B2 (ja) 2002-03-15 2003-03-13 機能デバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2004237429A JP2004237429A (ja) 2004-08-26
JP2004237429A5 JP2004237429A5 (enExample) 2007-03-01
JP4035457B2 true JP4035457B2 (ja) 2008-01-23

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JP2003068509A Expired - Fee Related JP4035457B2 (ja) 2002-03-15 2003-03-13 機能デバイスの製造方法

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JP (1) JP4035457B2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4965835B2 (ja) 2005-03-25 2012-07-04 キヤノン株式会社 構造体、その製造方法、及び該構造体を用いたデバイス
WO2006107068A1 (en) 2005-03-30 2006-10-12 Tohoku University Perpendicular magnetic recording medium, and perpendicular magnetic recording and reproducing apparatus
JP4630774B2 (ja) * 2005-09-06 2011-02-09 キヤノン株式会社 構造体の製造方法
JP4673735B2 (ja) * 2005-12-09 2011-04-20 日立マクセル株式会社 磁気記録媒体及びその製造方法
JP4637040B2 (ja) 2006-03-14 2011-02-23 キヤノン株式会社 磁気記録媒体およびその製造方法
JP5252859B2 (ja) * 2007-08-28 2013-07-31 株式会社東芝 磁性体膜の製造方法および磁性体膜
JP5306670B2 (ja) 2008-03-05 2013-10-02 独立行政法人科学技術振興機構 シリコンを母材とする複合材料及びその製造方法
WO2009110431A1 (ja) 2008-03-07 2009-09-11 独立行政法人科学技術振興機構 複合材料及びその製造方法、並びにその製造装置
JP5067739B2 (ja) * 2008-07-28 2012-11-07 国立大学法人東北大学 磁性薄膜とその成膜方法並びに磁性薄膜の応用デバイス
JP5281847B2 (ja) 2008-08-19 2013-09-04 独立行政法人科学技術振興機構 複合材料及びその製造方法、並びにその製造装置
JP5550007B2 (ja) * 2008-12-05 2014-07-16 国立大学法人東北大学 磁性薄膜及びその製造方法、並びにこのような磁性薄膜を用いた各種応用デバイス
US8946672B2 (en) 2009-11-11 2015-02-03 Nec Corporation Resistance changing element capable of operating at low voltage, semiconductor device, and method for forming resistance change element
CN104221085B (zh) * 2012-07-20 2017-05-24 吉坤日矿日石金属株式会社 磁记录膜形成用溅射靶及其制造方法
JP2014027047A (ja) * 2012-07-25 2014-02-06 Ricoh Co Ltd 磁性構造体及びその製造方法
WO2014087665A1 (ja) 2012-12-06 2014-06-12 富士電機株式会社 垂直磁気記録媒体
JP6193633B2 (ja) * 2013-06-11 2017-09-06 Hoya株式会社 インプリント用モールド、インプリント用モールドの製造方法、パターンドメディア作製用基板の製造方法、および、パターンドメディアの製造方法
WO2021240796A1 (ja) * 2020-05-29 2021-12-02 Tdk株式会社 磁性膜、磁気抵抗効果素子及び磁性膜の製造方法

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JP2004237429A (ja) 2004-08-26

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