JP4034913B2 - Manufacturing method of ceramic substrate - Google Patents

Manufacturing method of ceramic substrate Download PDF

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JP4034913B2
JP4034913B2 JP24041499A JP24041499A JP4034913B2 JP 4034913 B2 JP4034913 B2 JP 4034913B2 JP 24041499 A JP24041499 A JP 24041499A JP 24041499 A JP24041499 A JP 24041499A JP 4034913 B2 JP4034913 B2 JP 4034913B2
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ceramic substrate
ceramic
metallized
semiconductor element
region
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JP2001068599A (en
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恭二 植村
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Structure Of Printed Boards (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は、半導体素子を収容するための半導体素子収納用パッケージに用いられる円形のセラミック基板に関する。
【０００２】
【従来の技術】
半導体集積回路素子や半導体撮像素子等の半導体素子を収容するための半導体素子収納用パッケージとして、円形の半導体素子収納用パッケージが知られている。このような円形の半導体素子収納用パッケージの例を図１に斜視図で示す。
【０００３】
この例の半導体素子収納用パッケージは、セラミック基板１と蓋体２とから主に構成されている。そして、このセラミック基板１と蓋体２とから成るパッケージの内部に半導体素子３を気密に収容するようになっている。
【０００４】
セラミック基板１は、例えば酸化アルミニウム質焼結体等のセラミックスから成り、その上面側の中央部には半導体素子３を収容するための段付きの凹部１ａを有しており、この凹部１ａの底面には半導体素子３がろう材やガラス・樹脂等の接着剤を介して固着される。
【０００５】
なお、この例では凹部１ａの底面には、半導体素子３を固着するための下地金属として機能するメタライズダイパッド４が付着されている。
【０００６】
また、凹部１ａの段上には半導体素子３の各電極に対応した複数個のメタライズボンディングパッド５が形成されており、これらのメタライズボンディングパッド５には半導体素子３の各電極が金やアルミニウム等から成るボンディングワイヤ６を介して電気的に接続される。
【０００７】
さらに、セラミック基板１の側面には、複数の切り欠き部１ｂが形成されており、この切り欠き部１ｂの側面にはメタライズボンディングパッド５に電気的に接続されたメタライズ端子７が形成されている。
【０００８】
メタライズ端子７は、パッケージの内部に収容された半導体素子３の各電極を外部電気回路に電気的に接続するための端子であり、パッケージの内部に半導体素子３を収容した後、このメタライズ端子７を外部電気回路基板の配線導体に半田を介して接合することによって、半導体素子３の各電極が外部電気回路に電気的に接続されることとなる。
【０００９】
このとき、メタライズ端子７は、セラミック基板１の側面に設けられた切り欠き部１ｂ内に形成されているので、これを外部電気回路基板の配線導体に半田を介して接合すると、切り欠き部１ｂ内で外部電気回路基板の配線導体とメタライズ端子７との間に大きな半田の溜まりが立体的に形成され、両者が強固に接合される。
【００１０】
さらにまた、セラミック基板１はその上面外周部が封止面となっており、凹部１ａ底面に半導体素子３を固着するとともに半導体素子３の各電極とメタライズボンディングパッド５とを電気的に接続した後、この上面外周部に例えば金属やセラミック・ガラス等から成る蓋体２をろう材や半田・ガラス・樹脂等から成る封止材を介して接合することによってセラミック基体１と蓋体２とから成るパッケージの内部に半導体素子３が気密に収容されることとなる。
【００１１】
なお、この例ではセラミック基板１の上面外周部には、蓋体２を接合するための下地金属として機能するメタライズシールリング８が付着されている。
【００１２】
ところで、上述のようなセラミック基板１は、従来は下記のようにして製作されていた。
【００１３】
まず、図２（ａ）に上面図で、図２（ｂ）に断面図で示すような未焼成の生セラミック成形体10を準備する。
【００１４】
生セラミック成形体10は、セラミック基板１となる製品領域11と、これを囲繞する捨て代領域12とから成り、複数枚のセラミックグリーンシートに打ち抜き加工を施すとともに金属ペーストを塗布し、これらのセラミックグリーンシートを熱圧着等により積層一体化することにより形成される。
【００１５】
各製品領域11には、凹部１ａとなる凹部11ａが形成されているとともに、それぞれメタライズダイパッド４・メタライズボンディングパッド５・メタライズシールリング８となる金属ペースト14・15・18が塗布されている。
【００１６】
また、各製品領域11と捨て代領域12との間には切り欠き部１ｂとなる貫通および非貫通の穴11ｂが形成されており、この穴11ｂの内壁にはメタライズ端子７となる金属ペースト17が塗布されている。
【００１７】
次に、図７に示すように、生セラミック成形体10の製品領域11を円筒状のポンチ20を用いて打ち抜き、この打ち抜いた製品領域11を高温で焼成することによって図１に示すようなセラミック基板１が得られる。
【００１８】
【発明が解決しようとする課題】
しかしながら、従来のセラミック基板の製造方法によると、セラミックグリーンシートを積層して得られる生セラミック成形体は柔らかく、外力により塑性変形しやすい性質を有していることから、未焼成の生セラミック成形体の製品領域を円筒状のポンチで打ち抜く際に、ポンチにより製品領域の外周部に印加される圧力や応力等により切り欠き部が変形してしまいやすく、そのような変形があれば、切り欠き部に形成されたメタライズ端子を外部電気回路基板の配線導体に正確かつ強固に接続することができなくなってしまうという問題点を有していた。
【００１９】
本発明は、かかる従来の問題点に鑑み案出されたものであり、その目的は、セラミック基板の外周部に形成された切り欠き部に変形がなく、メタライズ端子を外部電気回路基板の配線導体に正確かつ強固に接続することが可能なセラミック基板を提供することにある。
【００２０】
【課題を解決するための手段】
本発明のセラミック基板の製造方法は、半導体素子を搭載するための略円板状のセラミック基板の側面に、半導体素子の電極を外部に接続するためのメタライズ端子が形成された切り欠き部を有して成るセラミック基板の製造方法であって、セラミック基板用の製品領域と、この製品領域を囲繞する捨て代領域とから成り、製品領域と捨て代領域との間に切り欠き部用の穴を有するとともに、この切り欠き部用の穴の内壁にメタライズ端子用のメタライズ層が付着されて成るセラミック焼結体を得た後、このセラミック焼結体の捨て代領域を研削除去してセラミック基板を得ることを特徴とするものである。
【００２１】
本発明のセラミック基板の製造方法によれば、製品領域と捨て代領域との間に切り欠き部用の穴を有する硬くて塑性変形することのないセラミック焼結体を得た後、このセラミック焼結体の捨て代領域を研削除去してセラミック基板を得るようにしたことから、セラミック基板の側面に形成された切り欠き部が変形したものとなることがない。
【００２２】
【発明の実施の形態】
次に、本発明のセラミック基板の製造方法の実施の形態の一例を説明する。
【００２３】
ここでは、前述した図１に示すセラミック基板１を製造する場合について説明する。まず、従来の場合と同様に、前述した図２に示す未焼成の生セラミック成形体10を準備する。
【００２４】
生セラミック成形体10は、例えば図３に斜視図で示すように３枚のセラミックグリーンシート31・32・33に凹部11ａを形成するための貫通穴31ａ・32ａおよび穴11ｂを形成するための貫通穴31ｂ・32ｂ・33ｂを形成するとともに、金属ペースト14・15・17・18を塗布し、これらのセラミックグリーンシート31・32・33を上下に積層して熱圧着することによって得られる。
【００２５】
なお、セラミックグリーンシート31・32・33は、例えば酸化アルミニウム・酸化珪素・酸化マグネシウム・酸化カルシウム等のセラミック原料粉末に適当な有機バインダー・有機溶剤を添加混合して泥漿状となすとともに、これを例えばドクターブレード法を採用してシート状となすことによって製作され、貫通穴31ａ・31ｂ・32ａ・32ｂ・33ｂは打ち抜き加工を施すことによって形成される。
【００２６】
また、金属ペースト14・15・17・18は、例えばタングステンやモリブデン等の金属粉末に適当な有機バインダー・有機溶剤を添加混合して適当な粘度のペースト状となすことにより製作され、スクリーン印刷法等により所定のパターンに塗布される。
【００２７】
次に、図４に斜視図で示すように、生セラミック成形体10から製品領域11およびその周りの捨て代領域12を例えばカッター刃等を用いて８角形に切り出す。
【００２８】
なお、この例では８角形に切り出したが４角形や６角形あるいは円形等の他の形状に切り出してもかまわない。
【００２９】
次に、切り出した製品領域11および捨て代領域12を高温で焼成し、図５（ａ）に斜視図で、図５（ｂ）に断面図で示すように、製品領域41と捨て代領域42とから成るセラミック焼結体40を得る。
【００３０】
製品領域41は、実質的にセラミック基板１と同一の構成を含み、凹部１ａおよびメタライズダイパッド４・メタライズボンディングパッド５・メタライズシールリング８を有している。
【００３１】
また、セラミック焼結体40は、製品領域41と捨て代領域42との間に切り欠き部１ｂとなる穴41ｂを有しており、この穴41ｂの内壁にはメタライズ端子７となるメタライズ層47が付着されている。
【００３２】
次に、図６（ａ）・（ｂ）に斜視図で示すように、セラミック焼結体40の側面を研削用の砥石50で研削して捨て代領域42を除去し、円形のセラミック基板１を得る。
【００３３】
このとき、セラミック焼結体40は焼結しているので硬くて塑性変形することはないので、研削の圧力や応力等により切り欠き部１ｂが変形してしまうようなことは一切ない。
【００３４】
なお、セラミックス焼結体40の捨て代領域42を研削除去して得られたセラミックス基板１は、側面の切り欠き部１ｂの深さが0.1 ｍｍ未満であると、切り欠き部１ｂに形成されたメタライズ端子７を外部電気回路基板の配線導体に半田を介して接合する際に、メタライズ端子７と外部電気回路基板の配線導体との間に大きな半田の溜まりが形成されずに両者を強固に接続できなくなる危険性が大きなものとなり、また、セラミック焼結体40の穴41ｂの径の半分を超えると、切り欠き部１ｂと絶縁基体１の外周側面との角部が鋭角となって欠けが発生する危険性が大きなものとなる。したがって、セラミック焼結体40の捨て代領域42を研削除去して得られたセラミック基板１は、側面の切り欠き部１ｂの深さが0.1 ｍｍ以上、かつ穴41ｂの径の半分以下となるように研削されていることが望ましい。
【００３５】
かくして、本発明のセラミック基板の製造方法によれば、円形のセラミック基板１の側面に形成された切り欠き部１ｂに変形がなく、この切り欠き部１ｂ内に形成されたメタライズ端子７を外部電気回路基板の配線導体に正確かつ強固に接続させることが可能なセラミック基板１を提供することができる。
【００３６】
なお、上述のようにして得られるセラミック基板１は、通常であれば、メタライズダイパッド４・メタライズボンディングパッド５およびメタライズシールリング８の表面にニッケルめっきおよび金めっきが施されるが、このようなめっきは、セラミック焼結体40の捨て代領域42を研削する前に施してもよいし、セラミック焼結体40の捨て代領域42を研削除去してセラミック基板１を得た後に施してもよい。ただし、セラミック焼結体40の捨て代領域42を研削する前にそのようなめっきを施すと、捨て代領域42を研削除去してセラミック基板１を得た後、メタライズ端子７の研削面がめっきで覆われずに直接露出して耐蝕性が劣ったものとなる危険性がある。したがって、そのようなめっきは、セラミック焼結体40の捨て代領域42を研削除去してセラミック基板１を得た後に施すことが好ましい。
【００３７】
【発明の効果】
本発明のセラミック基板の製造方法によれば、製品領域と捨て代領域との間に切り欠き部用の穴を有する硬くて塑性変形することのないセラミック焼結体を得た後、このセラミック焼結体の捨て代領域を研削除去してセラミック基板を得るようにしたことから、セラミック基板の側面に形成された切り欠き部が変形したものとなることはなく、切り欠き部内に形成されたメタライズ端子を外部電気回路基板の配線導体に正確かつ強固に接続させることが可能なセラミック基板を提供することができる。
【図面の簡単な説明】
【図１】円形のセラミック基板の例を示す斜視図である。
【図２】（ａ）および（ｂ）は、それぞれ図１に示すセラミック基板となる生セラミック成形体を示す上面図および断面図である。
【図３】図２に示す生セラミック成形体の製法を説明するための斜視図である。
【図４】本発明のセラミック基板の製造方法を説明するための斜視図である。
【図５】（ａ）および（ｂ）は本発明のセラミック基板の製造方法を説明するための斜視図である。
【図６】（ａ）および（ｂ）は本発明のセラミック基板の製造方法を説明するための斜視図である。
【図７】従来のセラミック基板の製造方法を説明するための斜視図である。
【符号の説明】
１・・・・・・セラミック基板
１ｂ・・・・・・切り欠き部
３・・・・・・半導体素子
７・・・・・・メタライズ端子
40・・・・・・セラミック焼結体
41・・・・・・製品領域
41ｂ・・・・・・穴
42・・・・・・捨て代領域
47・・・・・・メタライズ層[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a circular ceramic substrate used in a package for housing a semiconductor element for housing a semiconductor element.
[0002]
[Prior art]
As a package for housing a semiconductor element for housing a semiconductor element such as a semiconductor integrated circuit element or a semiconductor imaging element, a circular package for housing a semiconductor element is known. An example of such a circular package for housing semiconductor elements is shown in a perspective view in FIG.
[0003]
The semiconductor element storage package of this example is mainly composed of a ceramic substrate 1 and a lid 2. The semiconductor element 3 is hermetically accommodated in a package made up of the ceramic substrate 1 and the lid 2.
[0004]
The ceramic substrate 1 is made of, for example, ceramic such as an aluminum oxide sintered body, and has a stepped recess 1a for accommodating the semiconductor element 3 at the center on the upper surface side, and the bottom surface of the recess 1a. The semiconductor element 3 is fixed to the substrate via an adhesive such as brazing material, glass or resin.
[0005]
In this example, a metallized die pad 4 that functions as a base metal for fixing the semiconductor element 3 is attached to the bottom surface of the recess 1a.
[0006]
Further, a plurality of metallized bonding pads 5 corresponding to the respective electrodes of the semiconductor element 3 are formed on the step of the recess 1a, and each electrode of the semiconductor element 3 is made of gold, aluminum or the like on these metallized bonding pads 5. It is electrically connected through a bonding wire 6 made of
[0007]
Further, a plurality of notches 1b are formed on the side surface of the ceramic substrate 1, and a metallized terminal 7 electrically connected to the metallized bonding pad 5 is formed on the side surface of the notch 1b. .
[0008]
The metallized terminal 7 is a terminal for electrically connecting each electrode of the semiconductor element 3 accommodated in the package to an external electric circuit. After the semiconductor element 3 is accommodated in the package, the metallized terminal 7 Is joined to the wiring conductor of the external electric circuit board via solder, whereby each electrode of the semiconductor element 3 is electrically connected to the external electric circuit.
[0009]
At this time, since the metallized terminal 7 is formed in the cutout portion 1b provided on the side surface of the ceramic substrate 1, when this is joined to the wiring conductor of the external electric circuit board via the solder, the cutout portion 1b. A large solder pool is three-dimensionally formed between the wiring conductor of the external electric circuit board and the metallized terminal 7, and both are firmly bonded.
[0010]
Furthermore, the ceramic substrate 1 has a sealing surface at the outer periphery of the upper surface, and after the semiconductor element 3 is fixed to the bottom surface of the recess 1a, each electrode of the semiconductor element 3 and the metallized bonding pad 5 are electrically connected. The lid body 2 made of, for example, metal, ceramic, or glass is joined to the outer peripheral portion of the upper surface via a sealing material made of brazing material, solder, glass, resin, or the like, thereby comprising the ceramic base 1 and the lid body 2. The semiconductor element 3 is hermetically accommodated inside the package.
[0011]
In this example, a metallized seal ring 8 that functions as a base metal for joining the lid 2 is attached to the outer peripheral portion of the upper surface of the ceramic substrate 1.
[0012]
By the way, the ceramic substrate 1 as described above has been conventionally manufactured as follows.
[0013]
First, an unfired green ceramic molded body 10 as shown in a top view in FIG. 2A and a cross-sectional view in FIG. 2B is prepared.
[0014]
The green ceramic molded body 10 is composed of a product region 11 to be a ceramic substrate 1 and a disposal margin region 12 surrounding the ceramic substrate 1. A plurality of ceramic green sheets are punched and coated with a metal paste. It is formed by stacking and integrating green sheets by thermocompression bonding or the like.
[0015]
In each product region 11, a recess 11 a that becomes the recess 1 a is formed, and metal pastes 14, 15, and 18 that become the metallized die pad 4, metallized bonding pad 5, and metallized seal ring 8 are applied.
[0016]
Further, through and non-through holes 11b serving as notches 1b are formed between each product region 11 and the disposal margin region 12, and a metal paste 17 serving as a metallized terminal 7 is formed on the inner wall of the hole 11b. Is applied.
[0017]
Next, as shown in FIG. 7, the product region 11 of the green ceramic molded body 10 is punched out using a cylindrical punch 20, and the punched product region 11 is fired at a high temperature to thereby produce a ceramic as shown in FIG. A substrate 1 is obtained.
[0018]
[Problems to be solved by the invention]
However, according to the conventional method for producing a ceramic substrate, a green ceramic molded body obtained by laminating ceramic green sheets is soft and easily deforms plastically by an external force. When punching out the product area with a cylindrical punch, the notch is likely to be deformed by the pressure or stress applied to the outer periphery of the product area by the punch, and if there is such deformation, the notch The metallized terminals formed in the above cannot be accurately and firmly connected to the wiring conductors of the external electric circuit board.
[0019]
The present invention has been devised in view of such conventional problems, and an object of the present invention is to provide a metal conductor with a wiring conductor of an external electric circuit board without deformation in a notch formed in the outer peripheral part of the ceramic board. It is an object of the present invention to provide a ceramic substrate that can be connected accurately and firmly.
[0020]
[Means for Solving the Problems]
The method for manufacturing a ceramic substrate according to the present invention has a notch in which a metallized terminal for connecting an electrode of a semiconductor element to the outside is formed on a side surface of a substantially disk-shaped ceramic substrate for mounting the semiconductor element. A method for manufacturing a ceramic substrate comprising: a product region for a ceramic substrate and a disposal margin region surrounding the product region, and a hole for a notch is formed between the product region and the disposal margin region. And obtaining a ceramic sintered body in which a metallized layer for a metallized terminal is attached to the inner wall of the hole for the notch, and then grinding and removing the discarded area of the ceramic sintered body to remove the ceramic substrate. It is characterized by obtaining.
[0021]
According to the method for manufacturing a ceramic substrate of the present invention, after obtaining a hard and non-plastically deformed ceramic sintered body having a hole for a notch between a product region and a disposal margin region, the ceramic firing is performed. Since the ceramic substrate is obtained by grinding and removing the waste allowance area of the bonded body, the cutout portion formed on the side surface of the ceramic substrate is not deformed.
[0022]
DETAILED DESCRIPTION OF THE INVENTION
Next, an example of an embodiment of a method for producing a ceramic substrate of the present invention will be described.
[0023]
Here, the case where the ceramic substrate 1 shown in FIG. 1 is manufactured will be described. First, as in the conventional case, an unfired green ceramic molded body 10 shown in FIG. 2 is prepared.
[0024]
For example, as shown in a perspective view in FIG. 3, the green ceramic molded body 10 has three through holes for forming through holes 31a, 32a and holes 11b for forming concave portions 11a in three ceramic green sheets 31, 32, 33. The holes 31b, 32b, and 33b are formed, and the metal pastes 14, 15, 17, and 18 are applied, and the ceramic green sheets 31, 32, and 33 are stacked one on the other and thermocompression bonded.
[0025]
The ceramic green sheets 31, 32, and 33 are made into a mud by adding and mixing an appropriate organic binder and organic solvent to ceramic raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide. For example, it is manufactured by adopting a doctor blade method to form a sheet, and the through holes 31a, 31b, 32a, 32b, and 33b are formed by punching.
[0026]
Also, the metal paste 14, 15, 17, 18 is produced by adding a suitable organic binder / organic solvent to a metal powder such as tungsten or molybdenum to form a paste with a suitable viscosity. Etc., and is applied in a predetermined pattern.
[0027]
Next, as shown in a perspective view in FIG. 4, the product region 11 and the surrounding margin region 12 are cut out from the raw ceramic molded body 10 into an octagon using, for example, a cutter blade.
[0028]
In this example, it is cut into an octagon, but it may be cut into another shape such as a square, a hexagon, or a circle.
[0029]
Next, the cut product region 11 and the disposal allowance region 12 are fired at a high temperature, and as shown in a perspective view in FIG. 5A and a sectional view in FIG. A ceramic sintered body 40 is obtained.
[0030]
The product region 41 includes substantially the same configuration as the ceramic substrate 1, and includes a recess 1 a and a metallized die pad 4, a metallized bonding pad 5, and a metallized seal ring 8.
[0031]
Further, the ceramic sintered body 40 has a hole 41b which becomes the notch 1b between the product region 41 and the disposal allowance region 42, and a metallized layer 47 which becomes the metallized terminal 7 on the inner wall of the hole 41b. Is attached.
[0032]
Next, as shown in perspective views in FIGS. 6A and 6B, the side surface of the ceramic sintered body 40 is ground with a grinding wheel 50 for grinding to remove the discard margin region 42, and the circular ceramic substrate 1. Get.
[0033]
At this time, since the ceramic sintered body 40 is sintered, it is hard and does not plastically deform. Therefore, the cutout portion 1b is never deformed by grinding pressure or stress.
[0034]
In addition, the ceramic substrate 1 obtained by grinding and removing the discard margin region 42 of the ceramic sintered body 40 was formed in the cutout portion 1b when the depth of the cutout portion 1b on the side surface was less than 0.1 mm. When joining the metallized terminal 7 to the wiring conductor of the external electric circuit board via solder, a large pool of solder is not formed between the metallized terminal 7 and the wiring conductor of the external electric circuit board, and the two are firmly connected. If the diameter of the hole 41b of the ceramic sintered body 40 exceeds half of the diameter, the corner portion between the cutout portion 1b and the outer peripheral side surface of the insulating substrate 1 becomes an acute angle and chipping occurs. The risk of doing this is great. Therefore, the ceramic substrate 1 obtained by grinding and removing the disposal allowance region 42 of the ceramic sintered body 40 is such that the depth of the notch 1b on the side surface is not less than 0.1 mm and not more than half the diameter of the hole 41b. It is desirable that it is ground.
[0035]
Thus, according to the method for manufacturing a ceramic substrate of the present invention, the cutout portion 1b formed on the side surface of the circular ceramic substrate 1 is not deformed, and the metallized terminal 7 formed in the cutout portion 1b is connected to the external electric circuit. The ceramic substrate 1 that can be accurately and firmly connected to the wiring conductor of the circuit board can be provided.
[0036]
The ceramic substrate 1 obtained as described above is usually plated with nickel and gold on the surfaces of the metallized die pad 4, the metallized bonding pad 5 and the metallized seal ring 8. May be performed before the discard margin region 42 of the ceramic sintered body 40 is ground or after the discard margin region 42 of the ceramic sintered body 40 is ground and removed to obtain the ceramic substrate 1. However, if such plating is performed before grinding the disposal allowance region 42 of the ceramic sintered body 40, the grinding allowance region 42 is ground and removed to obtain the ceramic substrate 1, and then the ground surface of the metallized terminal 7 is plated. There is a risk that it will be directly exposed without being covered with, resulting in poor corrosion resistance. Therefore, such plating is preferably performed after grinding and removing the discard margin region 42 of the ceramic sintered body 40 to obtain the ceramic substrate 1.
[0037]
【The invention's effect】
According to the method for manufacturing a ceramic substrate of the present invention, after obtaining a hard and non-plastically deformed ceramic sintered body having a hole for a notch between a product region and a disposal margin region, the ceramic firing is performed. Since the ceramic substrate was obtained by grinding and removing the waste allowance area of the body, the notch formed on the side surface of the ceramic substrate did not become deformed, and the metallization formed in the notch It is possible to provide a ceramic substrate capable of accurately and firmly connecting the terminal to the wiring conductor of the external electric circuit substrate.
[Brief description of the drawings]
FIG. 1 is a perspective view showing an example of a circular ceramic substrate.
2A and 2B are a top view and a cross-sectional view, respectively, showing a green ceramic molded body that becomes the ceramic substrate shown in FIG. 1;
FIG. 3 is a perspective view for explaining a method for producing the green ceramic molded body shown in FIG. 2;
FIG. 4 is a perspective view for explaining a method for producing a ceramic substrate according to the present invention.
FIGS. 5A and 5B are perspective views for explaining a method of manufacturing a ceramic substrate according to the present invention.
FIGS. 6A and 6B are perspective views for explaining a method of manufacturing a ceramic substrate according to the present invention.
FIG. 7 is a perspective view for explaining a conventional method of manufacturing a ceramic substrate.
[Explanation of symbols]
1 ... Ceramic substrate 1b ... Notch 3 ... Semiconductor element 7 ... Metallized terminal
40 ・ ・ ・ ・ ・ ・ Ceramic sintered body
41 ・ ・ ・ ・ ・ ・ Product area
41b ・ ・ ・ ・ ・ ・ Hole
42 ...
47 ・ ・ ・ ・ ・ ・ Metalized layer

Claims (1)

半導体素子を搭載するための略円板状のセラミック基板の側面に、前記半導体素子の電極を外部に接続するためのメタライズ端子が形成された切り欠き部を有して成るセラミック基板の製造方法であって、前記セラミック基板用の製品領域と該製品領域を囲繞する捨て代領域とから成り、前記製品領域と前記捨て代領域との間に前記切り欠き部用の穴を有するとともに、該穴の内壁に前記メタライズ端子用のメタライズ層が付着されて成るセラミック焼結体を得た後、該セラミック焼結体の前記捨て代領域を研削除去して前記セラミック基板を得ることを特徴とするセラミック基板の製造方法。A method of manufacturing a ceramic substrate comprising a cutout portion in which a metallized terminal for connecting an electrode of the semiconductor element to the outside is formed on a side surface of a substantially disk-shaped ceramic substrate for mounting a semiconductor element. A product region for the ceramic substrate and a disposal margin region surrounding the product region, and has a hole for the notch between the product region and the disposal margin region. A ceramic substrate obtained by obtaining a ceramic sintered body in which a metallized layer for the metallized terminal is attached to an inner wall, and then grinding and removing the discard margin region of the ceramic sintered body. Manufacturing method.
JP24041499A 1999-08-26 1999-08-26 Manufacturing method of ceramic substrate Expired - Fee Related JP4034913B2 (en)

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JP7281278B2 (en) 2018-12-27 2023-05-25 日本特殊陶業株式会社 Wiring board and its manufacturing method
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