JP4031327B2 - レジスト組成物 - Google Patents

レジスト組成物 Download PDF

Info

Publication number
JP4031327B2
JP4031327B2 JP2002260191A JP2002260191A JP4031327B2 JP 4031327 B2 JP4031327 B2 JP 4031327B2 JP 2002260191 A JP2002260191 A JP 2002260191A JP 2002260191 A JP2002260191 A JP 2002260191A JP 4031327 B2 JP4031327 B2 JP 4031327B2
Authority
JP
Japan
Prior art keywords
group
resin
general formula
repeating unit
resist composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2002260191A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004101642A5 (US07494231-20090224-C00006.png
JP2004101642A (ja
Inventor
健一郎 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2002260191A priority Critical patent/JP4031327B2/ja
Priority to KR1020030059746A priority patent/KR100958126B1/ko
Publication of JP2004101642A publication Critical patent/JP2004101642A/ja
Publication of JP2004101642A5 publication Critical patent/JP2004101642A5/ja
Application granted granted Critical
Publication of JP4031327B2 publication Critical patent/JP4031327B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2002260191A 2002-09-05 2002-09-05 レジスト組成物 Expired - Lifetime JP4031327B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002260191A JP4031327B2 (ja) 2002-09-05 2002-09-05 レジスト組成物
KR1020030059746A KR100958126B1 (ko) 2002-09-05 2003-08-28 레지스트 조성물

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002260191A JP4031327B2 (ja) 2002-09-05 2002-09-05 レジスト組成物

Publications (3)

Publication Number Publication Date
JP2004101642A JP2004101642A (ja) 2004-04-02
JP2004101642A5 JP2004101642A5 (US07494231-20090224-C00006.png) 2005-09-22
JP4031327B2 true JP4031327B2 (ja) 2008-01-09

Family

ID=32260979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002260191A Expired - Lifetime JP4031327B2 (ja) 2002-09-05 2002-09-05 レジスト組成物

Country Status (2)

Country Link
JP (1) JP4031327B2 (US07494231-20090224-C00006.png)
KR (1) KR100958126B1 (US07494231-20090224-C00006.png)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4260772B2 (ja) * 2003-01-31 2009-04-30 東京応化工業株式会社 レジスト組成物の評価方法
JP2005031233A (ja) 2003-07-09 2005-02-03 Tokyo Ohka Kogyo Co Ltd レジスト組成物、積層体、及びレジストパターン形成方法
JP2005164633A (ja) * 2003-11-28 2005-06-23 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
JP2005300998A (ja) * 2004-04-13 2005-10-27 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
JP2006003781A (ja) * 2004-06-21 2006-01-05 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
JP4663456B2 (ja) * 2005-09-05 2011-04-06 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP5077355B2 (ja) 2007-10-01 2012-11-21 Ｊｓｒ株式会社 感放射線性組成物
US8697804B1 (en) 2008-01-24 2014-04-15 E I Du Pont De Nemours And Company Nucleated poly(trimethylene terephthalate)
TWI533082B (zh) 2008-09-10 2016-05-11 Jsr股份有限公司 敏輻射性樹脂組成物
CN102150083B (zh) * 2008-09-12 2013-09-04 Jsr株式会社 放射线敏感性树脂组合物及抗蚀剂图案形成方法
JP5812006B2 (ja) 2010-09-29 2015-11-11 Jsr株式会社 感放射線性樹脂組成物及びパターン形成方法
JP6004869B2 (ja) * 2012-09-28 2016-10-12 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法
KR101982559B1 (ko) * 2015-05-29 2019-05-27 후지필름 가부시키가이샤 패턴 형성 방법, 레지스트 패턴, 전자 디바이스의 제조 방법, 및 상층막 형성용 조성물

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3810957B2 (ja) * 1998-08-06 2006-08-16 株式会社東芝 レジスト用樹脂、レジスト組成物およびそれを用いたパターン形成方法
JP4046452B2 (ja) * 1999-12-06 2008-02-13 ダイセル化学工業株式会社 フォトレジスト用重合性不飽和化合物、及びフォトレジスト用樹脂組成物
JP2002040661A (ja) * 2000-07-24 2002-02-06 Toray Ind Inc ポジ型感放射線性組成物

Also Published As

Publication number Publication date
JP2004101642A (ja) 2004-04-02
KR20040030278A (ko) 2004-04-09
KR100958126B1 (ko) 2010-05-18

Similar Documents

Publication Publication Date Title
JP3841399B2 (ja) ポジ型レジスト組成物
JP4117112B2 (ja) ポジ型フォトレジスト組成物
JP4187949B2 (ja) ポジ型レジスト組成物
JP4102032B2 (ja) ポジ型レジスト組成物
JP4181760B2 (ja) ポジ型フォトレジスト組成物
JP4149154B2 (ja) ポジ型レジスト組成物
JP2004004834A (ja) ポジ型フォトレジスト組成物
JP4149153B2 (ja) ポジ型レジスト組成物
JP4149148B2 (ja) ポジ型レジスト組成物
JP4360836B2 (ja) ポジ型レジスト組成物
JP4124978B2 (ja) ポジ型レジスト組成物
JP4031327B2 (ja) レジスト組成物
JP2003122007A (ja) ポジ型レジスト組成物
JP4073266B2 (ja) ポジ型レジスト組成物
JP3948506B2 (ja) ポジ型フォトレジスト組成物
JP2007086514A (ja) レジスト組成物及びそれを用いたパターン形成方法
JP4049236B2 (ja) ポジ型レジスト組成物
JP4296033B2 (ja) ポジ型レジスト組成物
JP4070521B2 (ja) ポジ型レジスト組成物
JP4090773B2 (ja) ポジ型レジスト組成物
JP3860044B2 (ja) ポジ型レジスト組成物
JP3907171B2 (ja) ポジ型レジスト組成物
JP3890390B2 (ja) ポジ型レジスト組成物
JP4031334B2 (ja) ポジ型レジスト組成物
JP2002341541A (ja) ポジ型レジスト組成物

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050419

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050419

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20060325

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20061124

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070713

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070718

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070914

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20071010

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20071018

R150 Certificate of patent or registration of utility model

Ref document number: 4031327

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101026

Year of fee payment: 3

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071108

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071115

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071122

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111026

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121026

Year of fee payment: 5

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121026

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131026

Year of fee payment: 6

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term